Patent application number | Description | Published |
20090059197 | Exposure apparatus and method of exposing a semiconductor substrate - An exposure apparatus includes a light source adapted to emit light, a photomask in a path of the light between the light source and a semiconductor substrate, the photomask being in a mask plane (MP) and having patterns to be transcribed onto the semiconductor substrate, and a spatial light modulator (SLM) in a first image correction region of the photomask between the light source and the photomask, the SLM being adapted to adjust a distribution of intensity of the light. | 03-05-2009 |
20090239158 | Method of maintaining mask for semiconductor process - A method of maintaining a mask for a semiconductor process, the method includes providing a first structure and a second structure being attached to each other via a thermosetting material, detaching the first and second structures from each other, and performing an ashing process on the first structure. | 09-24-2009 |
20100209831 | Method for correcting a position error of lithography apparatus - A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer. | 08-19-2010 |
20110086296 | PHASE SHIFT MASKS - A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution. | 04-14-2011 |
20110104591 | Methods of Fabricating Halftone Phase Shift Blank Photomasks and Halftone Phase Shift Photomasks - Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein. | 05-05-2011 |
20110244374 | Methods of Correcting Optical Parameters in Photomasks - A method of correcting an optical parameter in a photomask is provided. The method includes providing a photomask, exposing the photomask, detecting an aerial image to estimate the photomask, and irradiating gas cluster ion beams to the photomask based on an estimation result to correct the optical parameter in the photomask in relation to the aerial image. The gas cluster ion beams may be irradiated to a front surface of the photomask on which a mask pattern is formed or a rear surface of the photomask on which the mask pattern is not formed. | 10-06-2011 |
20120214092 | METHOD OF MANUFACTURING A PHOTOMASK - A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer. | 08-23-2012 |
20120237860 | REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME - A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening. | 09-20-2012 |
20130101926 | Halftone Phase Shift Blank Photomasks and Halftone Phase Shift Photomasks - Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein. | 04-25-2013 |
20140145091 | ELECTRON BEAM EXPOSURE APPARATUS - An electron beam exposure apparatus may include a plurality of electron guns, a condenser lens, a position-adjusting unit and an aperture plate. The electron guns may emit electron beams to a substrate. The condenser lens may be arranged between the electron guns and the substrate to concentrate the electron beams. The position-adjusting unit may individually adjust positions of the electron guns to provide the concentrated electron beam with a uniform intensity. The aperture plate may be arranged between the substrate and the condenser lens. The aperture plate may have a plurality of apertures through which the concentrated electron beams are incident. | 05-29-2014 |
20140170534 | PHASE SHIFT MASKS AND METHODS OF FORMING PHASE SHIFT MASKS - A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution. | 06-19-2014 |
Patent application number | Description | Published |
20080315914 | Data transmission device and method thereof - A data transmission device may include a transmission chip, a plurality of reception chips and/or a pair of transmission lines. The transmission chip may transmit data and the reception chips may receive the data from the transmission chip. One of the plurality of reception chips may provide a corresponding terminal resistance when it receives the data. The transmission lines may be coupled between the transmission chip and the reception chips, and the transmission lines may have a daisy-chain configuration. Therefore, a data transmission device may provide a fixed terminal resistance in impedance matching and increase a transmission speed. | 12-25-2008 |
20090184743 | Deskew system for eliminating skew between data signals and clock and circuits for the deskew system - A deskew system includes a first voltage control delay receiving a data signal and generating N-numbered delayed data signals obtained by delaying a phase of the data signal in units of 90/N, where N is a natural number that is not less than 1. In response to a phase control signal, a second voltage control delay receives a clock and generates N-numbered delayed clocks by delaying a phase of the clock in units of 90/N. A skew compensation control unit generates a plurality of skew control signals to compensate for skew between the data signal and the clock based on the data signal, the N-numbered delayed data signals, the clock, and the N-numbered delayed clocks. | 07-23-2009 |
20090207118 | DATA DRIVING UNIT AND LIQUID CRYSTAL DISPLAY - A data driving unit and a liquid crystal display (LCD) are provided. The data driving unit includes a first buffer, a second buffer, a charge sharing switch connected between an output terminal of the first buffer and an output terminal of the second buffer, and a controller configured to compare a previous line-time data pattern with a current line-time data pattern and generate a control signal for controlling a switching operation of the charge sharing switch according to a comparison result. | 08-20-2009 |
20110038425 | DIFFERENTIAL DATA TRANSFERRING SYSTEM AND METHOD USING THREE LEVEL VOLTAGES - A differential data transferring system and method uses three level voltages to simultaneously transfer three signals (for example, two data signals and one clock signal) across two transfer line sets (i.e., four transfer lines). Therefore, the differential data transferring method increases transferring efficiency by using fewer transfer lines. Also, according to the differential data transferring system and method, one of two transfer lines forming a transfer line set is controlled to a middle voltage level, while the other transfer line is controlled to either a high voltage or a low voltage. Accordingly, the voltage difference between the two transfer lines may be maintained at a constant amplitude. Additionally, the difference between first and second dividing voltages DC | 02-17-2011 |
20110199143 | INTERNAL CLOCK GENERATING CIRCUIT AND METHOD FOR GENERATING INTERNAL CLOCK SIGNAL WITH DATA SIGNAL - An internal clock generating circuit and a method for generating an internal clock signal are disclosed. The internal clock generating circuit includes a transition detecting block for detecting transitions in a data signal and generating data transition information, and an internal clock generating block for generating and storing a period digital data while detecting the unit period of the data signal in a period confirming mode. In the internal clock generating circuit, the internal clock signal can be generated without the external clock signal, so that the internal clock generating circuit can be implemented with a simple constitution. Additionally, an extra locking time is not required for locking the extra clock signal, so that the operating speed of the internal clock generating circuit is improved. The internal clock signal is dependent on the data signal, so that it is easy to control the set-up and hold for data. | 08-18-2011 |
20120044236 | Device for adjusting transmission signal level based on channel loading - A device for controlling the level of a transmission signal according to the channel loading is provided. The device may include a plurality of semiconductor devices and a controller to control the plurality of semiconductor devices. The controller may control the level of a signal to be transmitted to each of the plurality of semiconductor devices according to the channel loading on each semiconductor device. | 02-23-2012 |
Patent application number | Description | Published |
20080200026 | Method of forming fine metal patterns for a semiconductor device using a damascene process - A method of forming fine metal interconnect patterns includes forming an insulating film on a substrate, forming a plurality of mold patterns with first spaces therebetween on the insulating film, such that the mold patterns have a first layout, forming metal hardmask patterns in the first spaces by a damascene process, removing the mold patterns, etching the insulating film through the metal hardmask patterns to form insulating film patterns with second spaces therebetween, the second spaces having the first layout, and forming metal interconnect patterns having the first layout in the second spaces by the damascene process. | 08-21-2008 |
20090004826 | Method of manufacturing a semiconductor device - In a method of manufacturing a semiconductor device, a first substrate and a second substrate, which include a plurality of memory cells and selection transistors, respectively, are provided. A first insulating interlayer and a second insulating interlayer are formed on the first substrate and the second substrate, respectively, to cover the memory cells and the selection transistors. A lower surface of the second substrate is partially removed to reduce a thickness of the second substrate. The lower surface of the second substrate is attached to the first insulating interlayer. Plugs are formed through the second insulating interlayer, the second substrate and the first insulating interlayer to electrically connect the selection transistors in the first substrate and the second substrate to the plugs. Thus, impurity ions in the first substrate will not diffuse during a thermal treatment process. | 01-01-2009 |
20090258473 | Nonvolatile memory device and method of manufacturing the same - Example embodiments provide a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner. | 10-15-2009 |
20100197139 | METHOD OF FORMING A HARD MASK AND METHOD OF FORMING A FINE PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME - A method of forming hard mask employs a double patterning technique. A first hard mask layer is formed on a substrate, and a first sacrificial pattern is formed on the first hard mask layer by photolithography. Features of the first sacrificial pattern are spaced from one another by a first pitch. A second hard mask layer is then formed conformally on the first sacrificial pattern and the first hard mask layer so as to delimit recesses between adjacent features of the first sacrificial pattern. Upper portions of the second hard mask layer are removed to expose the first sacrificial pattern, and the exposed first sacrificial pattern and the second sacrificial pattern are removed. The second hard mask layer and the first hard mask layer are then etched to form a hard mask composed of residual portions of the first hard mask layer and the second hard mask layer. A fine pattern of a semiconductor device, such as a trench isolation region or a pattern of contact holes, can be formed using the hard mask as an etch mask. | 08-05-2010 |
20110269294 | METHOD OF FORMING A HARD MASK AND METHOD OF FORMING A FINE PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME - A method of forming hard mask employs a double patterning technique. A first hard mask layer is formed on a substrate, and a first sacrificial pattern is formed on the first hard mask layer by photolithography. Features of the first sacrificial pattern are spaced from one another by a first pitch. A second hard mask layer is then formed conformally on the first sacrificial pattern and the first hard mask layer so as to delimit recesses between adjacent features of the first sacrificial pattern. Upper portions of the second hard mask layer are removed to expose the first sacrificial pattern, and the exposed first sacrificial pattern and the second sacrificial pattern are removed. The second hard mask layer and the first hard mask layer are then etched to form a hard mask composed of residual portions of the first hard mask layer and the second hard mask layer. A fine pattern of a semiconductor device, such as a trench isolation region or a pattern of contact holes, can be formed using the hard mask as an etch mask. | 11-03-2011 |
Patent application number | Description | Published |
20140302379 | BATTERY UNIT AND BATTERY MODULE USING THE SAME - A battery unit includes a case accommodating an electrode assembly and having an opening, and a cap plate cover the opening, and having a terminal insertion portion. The battery unit further includes a terminal member inserted into the case through the terminal insertion portion from an exterior of the case and coupled to the electrode assembly, the terminal member having a terminal portion, extending in a major side direction of the cap plate at an exterior of the cap plate, and being separated from an upper surface of the cap plate. The battery unit further includes a fixing member in the terminal insertion portion fixing the terminal member to the cap plate and having injection-molded plastic resin in the terminal insertion portion surrounding the terminal member; and a support member coupled to the cap plate and supporting the terminal portion with respect to the cap plate. | 10-09-2014 |
20140302381 | BATTERY UNIT AND BATTERY MODULE USING THE SAME - A battery unit includes a case accommodating an electrode assembly, the case having an opening and a cap plate for covering the opening, the cap plate having a terminal insertion portion. The battery unit further includes a terminal member inserted into the case through the terminal insertion portion from an outside of the case and coupled to the electrode assembly, the terminal member including a current collector electrically coupled to the electrode assembly; a terminal portion extending parallel to an upper surface of the cap plate to an outside of the cap plate; and a connection portion electrically coupled to the current collector and to the terminal portion. The battery unit further includes a fixing member in the terminal insertion portion and fixing the terminal member to the cap plate, the fixing member including injection-molded plastic resin in the terminal insertion portion and surrounding the terminal member. | 10-09-2014 |
20140308575 | RECHARGEABLE BATTERY - A rechargeable battery is provided including an electrode assembly including a positive electrode and a negative electrode; a case accommodating the electrode assembly; a cap plate coupled to the case; a first terminal and a second terminal electrically connected to the electrode assembly and protruding outside the cap plate; and a short-circuit member at the cap plate and contacting the first terminal by transformation to induce a short. | 10-16-2014 |
20150340701 | SECONDARY BATTERY - A secondary battery includes a case; an electrode assembly accommodated in the case, and including a first electrode plate, a second electrode plate, and a separator between the first and second electrode plates; a first terminal portion electrically connected to the electrode assembly; and a cap plate configured to cover an opening of the case, and the first terminal portion includes a first electrode terminal passing through the cap plate to protrude upward from a first position of the cap plate, and a first current collector including a first end connected to the first electrode terminal, and a second end connected to the first electrode plate, the first current collector including a plurality of notches. | 11-26-2015 |
Patent application number | Description | Published |
20140134479 | ADDITIVE FOR ELECTROLYTE AND ELECTROLYTE AND RECHARGEABLE LITHIUM BATTERY - An electrolyte additive represented by the following Chemical Formula 1, an electrolyte, and a rechargeable lithium battery are disclosed: | 05-15-2014 |
20140308563 | RECHARGEABLE LITHIUM BATTERY AND METHOD OF FABRICATING SAME - In an aspect, a rechargeable lithium battery that includes a positive electrode; negative electrode; a separator interposed between the positive electrode and the negative electrode and including a porous substrate and a coating layer formed on at least one side of the porous substrate; and an electrolyte including a lithium salt, a non-aqueous organic solvent, and an additive is provided. | 10-16-2014 |
20140308564 | RECHARGEABLE LITHIUM BATTERY AND METHOD OF FABRICATING THE SAME - In an aspect, a rechargeable lithium battery that includes a positive electrode; negative electrode; a separator interposed between the positive electrode and the negative electrode and including a porous substrate and a coating layer formed on at least one side of the porous substrate; and an electrolyte including a lithium salt, a non-aqueous organic solvent, and an additive is provided. | 10-16-2014 |
20150050533 | NEGATIVE ELECTRODE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME - A negative electrode for a rechargeable lithium battery, the negative electrode including: a current collector; a negative active material layer on the current collector; and a coating layer directly contacting the negative active material layer, the coating layer including an organic material and an inorganic material, is disclosed. A rechargeable lithium battery including the same is also disclosed. | 02-19-2015 |
20150050544 | RECHARGEABLE LITHIUM BATTERY - A rechargeable lithium battery includes a positive electrode, a negative electrode, and a separator between the positive electrode and the negative electrode. The separator includes a substrate having a first side facing the negative electrode and a second side facing the positive electrode. A first layer is positioned on the first side of the substrate and includes an organic material, and a second layer is positioned on the second side of the substrate and includes an inorganic material. | 02-19-2015 |
20150072247 | ELECTROLYTE FOR LITHIUM BATTERY, LITHIUM BATTERY INCLUDING THE SAME, AND METHOD OF MANUFACTURING ELECTROLYTE FOR LITHIUM BATTERY - An electrolyte for a lithium battery, a lithium battery including the electrolyte, and a method of preparing the electrolyte for a lithium battery. The electrolyte for a lithium battery includes a non-aqueous organic solvent; and about 0.1 wt % to about 1 wt % of lithium nitrate (LiNO | 03-12-2015 |
20150111087 | COATED SEPARATOR AND ELECTROCHEMICAL DEVICE INCLUDING THE SAME - A separator for a battery and an electronic device, the separator including a separator substrate; and a separator coating layer coated on at least one surface of the separator substrate, the separator coating layer including a binder and at least one quaternary ammonium salt. | 04-23-2015 |
Patent application number | Description | Published |
20130087770 | Organic Light Emitting Display Device - An organic light emitting display device which includes a base member; an organic light emitting display unit disposed on the base member and configured to generate an image; a sealing layer configured to seal the organic light emitting display unit; a capping substrate disposed on the sealing layer and having a plurality of metal layers, one of the metal layers being in contact with the sealing layer and having at least one groove; and a moisture absorbent provided in the groove. | 04-11-2013 |
20150255754 | DISPLAY DEVICE - A display device includes a first substrate, a second substrate facing the first substrate, a first electrode on the first substrate, a pixel defining layer on the first substrate, the pixel defining layer including an opening corresponding to the first electrode, a light emission layer on the first electrode, a second electrode on the light emission layer, a filler between the first substrate and the second substrate, and scattering particles in the filler, the scattering particles having an average particle diameter that is less than a maximum height of the pixel defining layer. | 09-10-2015 |
20150357601 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An OLED display according to an exemplary embodiment includes: a substrate; an organic light emitting diode formed on the substrate; an overcoat covering the organic light emitting diode; and a patterned metal sheet attached on the overcoat and having a plurality of protrusion and depression portions. A plurality of protrusions may be formed in a bottom surface of the patterned metal sheet where the protrusion and depression portions of the patterned metal sheet and the overcoat face each other. | 12-10-2015 |
Patent application number | Description | Published |
20130221306 | VARIABLE RESISTIVE MEMORY DEVICE - A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell contact plug electrically connected to the first contact layer; and a variable resistive memory cell electrically connected to the memory cell contact plug, wherein the first contact layer has less contact resistance with respect to the active region than the memory cell contact plug. | 08-29-2013 |
20140021551 | SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes active portions defined in a semiconductor substrate, a device isolation pattern in a trench formed between the active portions, a gate electrode in a gate recess region crossing the active portions and the device isolation pattern, a gate dielectric layer between the gate electrode and an inner surface of the gate recess region, and a first ohmic pattern and a second ohmic pattern on each of the active portions at both sides of the gate electrode, respectively. The first and second ohmic patterns include a metal-semiconductor compound, and a top surface of the device isolation pattern at both sides of the gate recess region is recessed to be lower than a level of a top surface of the semiconductor substrate. | 01-23-2014 |
20140054721 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device, and a method of fabricating the same, include a substrate including two-dimensionally arranged active portions, device isolation patterns extending along sidewalls of the active portions, each of the device isolation patterns including first and second device isolation patterns, gate patterns extending across the active portions and the device isolation patterns, each of the gate patterns including a gate insulating layer, a gate line and a gate capping pattern, and ohmic patterns on the active portions, respectively. Top surfaces of the first device isolation pattern and the gate insulating layer may be lower than those of the second device isolation pattern and the gate capping pattern, respectively, and the ohmic patterns may include an extending portion on the first insulating layer. | 02-27-2014 |
20150357230 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device, and a method of fabricating the same, include a substrate including two-dimensionally arranged active portions, device isolation patterns extending along sidewalls of the active portions, each of the device isolation patterns including first and second device isolation patterns, gate patterns extending across the active portions and the device isolation patterns, each of the gate patterns including a gate insulating layer, a gate line and a gate capping pattern, and ohmic patterns on the active portions, respectively. Top surfaces of the first device isolation pattern and the gate insulating layer may be lower than those of the second device isolation pattern and the gate capping pattern, respectively, and the ohmic patterns may include an extending portion on the first insulating layer. | 12-10-2015 |
Patent application number | Description | Published |
20100058568 | MULTI-BAND FILTER MODULE AND METHOD OF FABRICATING THE SAME - A multi-band filter module and a method of fabricating the same are provided. The multi-band filter module includes a piezoelectric substrate, a first filter provided on the piezoelectric substrate, and a second filter provided adjacent to the first filter on the piezoelectric substrate, and operating in a frequency band that is lower than that of the first filter. | 03-11-2010 |
20100059346 | RF NANOSWITCH - An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply. | 03-11-2010 |
20100095497 | MONOLITHIC DUPLEXER - A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter. | 04-22-2010 |
20140312993 | METHOD OF FABRICATING MULTI-BAND FILER MODULE - A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed. | 10-23-2014 |
Patent application number | Description | Published |
20110037141 | Semiconductor Device and Method of Fabricating the Same - A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. | 02-17-2011 |
20110175149 | Semiconductor Device and Method of Fabricating the Same - A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. | 07-21-2011 |
20120286369 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. | 11-15-2012 |
20130320461 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. | 12-05-2013 |
20150137320 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. | 05-21-2015 |
20150179799 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. | 06-25-2015 |
Patent application number | Description | Published |
20080272436 | Semiconductor device and method of fabricating the same - A semiconductor device includes a first stress film covering a first gate electrode and first source/drain areas of a first transistor area and at least a portion of a third gate electrode of an interface area, a second stress film covering a second gate electrode and second source/drain areas of a second transistor area and overlapping at least a portion of the first stress film on the third gate electrode of the interface area, and an interlayer insulating film formed on the first and the second stress film. The semiconductor device further includes a plurality of first contact holes formed through the interlayer insulating film and the first stress film in the first transistor area to expose the first gate electrode and the first source/drain areas, a plurality of second contact holes formed through the interlayer insulating film and the second stress film in the second transistor area to expose the second gate electrode and the second source/drain areas, and a third contact hole formed through the interlayer insulating film, the second stress film, and the first stress film in the interface area to expose the third gate electrode. A depth of a recessed portion of an upper side of the third gate electrode in which the third contact hole is formed is equal to or larger than a depth of a recessed portion of an upper side of the first gate electrode in which the first contact hole is formed. | 11-06-2008 |
20090280645 | Method of fabricating semiconductor device - Provided is a method of fabricating a semiconductor device including a dual suicide process. The method may include sequentially siliciding and stressing a first MOS region, and sequentially siliciding and stressing a second MOS region after siliciding and stressing the first MOS region, the second MOS region being a different type than the first MOS region. | 11-12-2009 |
20100065919 | Semiconductor Devices Including Multiple Stress Films in Interface Area - A semiconductor substrate includes a first transistor area having a first gate electrode and first source/drain areas, a second transistor area having a second gate electrode and second source/drain areas, and an interface area provided at an interface of the first transistor area and the second transistor area and having a third gate electrode. A first stress film is on the first gate electrode and the first source/drain areas of the first transistor area and at least a portion of the third gate electrode of the interface area. A second stress film is on the second gate electrode and the second source/drain areas of the second transistor area and not overlapping the first stress film on the third gate electrode of the interface area or overlapping at least a portion of the first stress film. The second stress film overlapping at least the portion of the first stress film is thinner than the second stress film in the second transistor area. Related methods are also described. | 03-18-2010 |
20100173497 | Method of fabricating semiconductor integrated circuit device - A method manufacturing a semiconductor integrated circuit device includes providing a substrate; sequentially forming a layer to be etched, a first layer, and a second layer on the substrate; forming on the first and second layers a first etch mask having a plurality of first line patterns separated from each other by a first pitch and extending in a first direction; sequentially performing first etching on the second layer and the first layer using the first etch mask to form an intermediate mask pattern with second and first patterns; forming on the intermediate mask pattern a second etch mask including a plurality of second line patterns separated from each other by a second pitch and extending in a second direction other than the first direction; performing second etching using the second etch mask on a portion of the second pattern so that the remaining portion of the second pattern is left on the first pattern; performing third etching using the second etch mask under different conditions than the second etching on the first pattern and the remaining portion of second pattern of the intermediate mask pattern and forming a final mask pattern; and patterning the layer to be etched using the final mask pattern. | 07-08-2010 |
20110201202 | METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE - A method of forming fine patterns of a semiconductor device, the method including providing a patternable layer; forming a plurality of first photoresist layer patterns on the patternable layer; forming an interfacial layer on the patternable layer and the plurality of first photoresist layer patterns; forming a planarization layer on the interfacial layer; forming a plurality of second photoresist layer patterns on the planarization layer; forming a plurality of planarization layer patterns using the plurality of second photoresist layer patterns; and forming a plurality of layer patterns using the plurality of planarization layer patterns and the plurality of first photoresist layer patterns. | 08-18-2011 |
Patent application number | Description | Published |
20120257823 | DEVICE AND METHOD OF COMPRESSING IMAGE FOR DISPLAY DEVICE - A mode coding unit for an image compression device includes a submode determination unit, a variable bit determination unit, and a coding unit. The submode determination unit is configured to determine a submode of an image block. The submode indicates a matching degree between an upper bit of the image block and an upper bit of a reference block. The variable bit determination unit is configured to determine a size of primary color compression information fields corresponding to primary colors in a reference pixel in the image block based on a relational size of color information of the primary colors. The coding unit is configured to generate compressed image data by coding the image block based on the submode and the size of the primary color compression information fields. | 10-11-2012 |
20130083006 | 3D DISPLAY APPARATUS PREVENTING IMAGE OVERLAPPING - A three-dimensional display device includes a display unit configured to display images, and an intermediate image generating unit configured to generate M images corresponding to a maximum disparity in response to input two-dimensional (2D) images and disparity information of the respective 2D images, wherein the intermediate image generating unit selects N images from among the M images, and provides the selected images to the display unit. | 04-04-2013 |
20140022220 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A display device including: a display panel; and a signal controller which controls signals for driving the display panel, where the signal controller includes a representative value generator which sequentially operates a portion of image data of one frame, where the representative value generator moves a last position digit into another position digit of the portion of the image data and generates a representative value representing a portion of a frame image corresponding to the portion of the image data; a storage portion which stores the representative value therein; and a comparator which compares the representative values of present and prior frames to determine whether the portion of the frame image is a still image or a motion picture, and the signal controller controls the signals for driving the display panel such that a driving frequency for the still image is lower than a driving frequency for the motion picture. | 01-23-2014 |
Patent application number | Description | Published |
20150286059 | IMAGE SENSOR HAVING IMPROVED LIGHT UTILIZATION EFFICIENCY - At least one example embodiment discloses an image sensor with an improved light utilization efficiency based on reflective color filters. Since the image sensors may use most of an incident light for forming an image by using reflective color filters, light loss due to light absorption may be reduced. Therefore, light utilization efficiency of the image sensors may be improved while embodying color purity. | 10-08-2015 |
20150286060 | COLOR SEPARATION DEVICE AND IMAGE SENSOR INCLUDING THE COLOR SEPARATION DEVICE - A color separation device changes a light path according to the wavelengths of incident light and an image sensor has improved light utilization efficiency by using the color separation device. The color separation device may include a first element having a first refractive index that varies according to wavelengths of light along a first refractive index distribution curve, and a second element having a second refractive index that varies according to wavelengths of light along a second refractive index distribution curve, the second refractive index distribution curve being different from the first refractive index distribution curve. The color separation device may be manufactured by simply joining two elements, namely, the first and second elements, together and thus may be more easily manufactured and perform more effective color separation. | 10-08-2015 |
20150318318 | IMAGE SENSOR HAVING IMPROVED LIGHT UTILIZATION EFFICIENCY - An image sensor includes a first pixel row including a plurality of first pixels configured to sense first wavelength light, the first wavelength light having a first wavelength, a second pixel row adjacent to the first pixel row, the second pixel row including a plurality of second pixels configured to sense second wavelength light and a plurality of third pixels configured to sense third wavelength light, the plurality of second pixels and the plurality of third pixels being alternately arranged, the second wavelength light having a second wavelength and the third wavelength light having a third wavelength and a plurality of first color separation elements in the plurality of second pixels, respectively, the plurality of separation elements configured to change a spectrum distribution of incident light. | 11-05-2015 |
20150323800 | COLOR SEPARATION DEVICES AND IMAGE SENSORS INCLUDING THE SAME - Color separation devices, and image sensors including the color separation devices and color filters, include at least two transparent bars that face each other with a gap therebetween. Mutually-facing surfaces of the at least two transparent bars are separated from each other by the gap such that the at least two transparent bars allow diffraction of visible light passing therebetween. The at least two transparent bars have a refractive index greater than a refractive index of a surrounding medium. | 11-12-2015 |
20150364521 | STACKED TYPE IMAGE SENSOR INCLUDING COLOR SEPARATION ELEMENT AND IMAGE PICKUP APPARATUS INCLUDING THE STACKED TYPE IMAGE SENSOR - A stacked type image sensor with improved optical characteristics, which may result from a color separation element, and an image pickup apparatus including this image sensor. The stacked type image sensor includes first and second light sensing layers arranged in a stacked manner, and color separation elements positioned between the first and second light sensing layers. Accordingly, the first light sensing layer absorbs and detects light of a first wavelength band, and the second light sensing layer detects light of second and third wavelength bands separated by the color separation elements. | 12-17-2015 |
20150365640 | COLOR SEPARATION ELEMENT ARRAY, IMAGE SENSOR INCLUDING THE COLOR SEPARATION ELEMENT ARRAY, AND IMAGE PICKUP APPARATUS INCLUDING THE COLOR SEPARATION ELEMENT ARRAY - A color separation element array includes a plurality of color separation elements arranged in two dimensions and separating an incident light according to a wavelength such that, of the incident light, a light of a first wavelength is directed to a first direction and a light of a second wavelength that is different from the first wavelength is directed to a second direction that is different from the first direction, in which each of the plurality of color separation elements includes a first element and a second element that are sequentially arranged according to a traveling direction of the incident light, and the first element and the second element of at least one of the plurality of color separation elements are shifted with respect to each other. | 12-17-2015 |
20160006995 | IMAGE SENSOR INCLUDING COLOR SEPARATION ELEMENT AND IMAGE PICKUP APPARATUS INCLUDING THE IMAGE SENSOR - An image sensor includes a pixel array having a Bayer pattern structure including a first pixel row in which first pixels and second pixels are alternately provided and a second pixel row in which additional ones of the second pixels and third pixels are alternately provided, a first element to control light of a first wavelength band to travel in directions toward left and right sides of the first element and to control light of a second wavelength band of the incident light to travel in a direction directly under the first element, and a second element to control light of a third wavelength band to travel in the directions toward the left and right sides of the second element and to control the light of the second wavelength band to travel in a direction directly under the second element. | 01-07-2016 |
20160047690 | IMAGE SENSOR INCLUDING COLOR FILTER ISOLATION LAYER AND METHOD OF MANUFACTURING THE SAME - An image sensor including a color filter isolation layer and a method of manufacturing the image sensor. The image sensor includes a plurality of color filters that transmit light of a predetermined wavelength band to a light sensing layer. The image sensor also includes an isolation layer disposed between adjacent ones of the plurality of color filters. The isolation layer is formed of a material having a lower refractive index than a refractive index of the color filters, thus totally internally reflecting light incident on the isolation layer from one of the plurality of color filters. | 02-18-2016 |
20160054172 | IMAGE SENSOR FOR PRODUCING VIVID COLORS AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the same are provided. The image sensor includes a photoelectric conversion layer; a color filter disposed on the photoelectric conversion layer; a low refractive index layer disposed on the color filter; a beam splitter disposed within the low refractive index layer; and a lens layer disposed on the low refractive index layer and covering the beam splitter. The beam splitter extends in a diagonal direction of a pixel area of the color filter, in a plan view. | 02-25-2016 |
20160054173 | IMAGE SENSOR HAVING IMPROVED LIGHT UTILIZATION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - An image sensor including a color filter array layer, which includes a plurality of color filters transmitting light of different colors; and reflective partitioning walls, which define the color filters and have a lower refractive index than that of the color filters; a color separation device, which separates incident light into a plurality of colors, such that the plurality colors are incident on the plurality of color filters, respectively; and a sensor substrate, on which a plurality of light detection devices for respectively sensing light transmitted through the plurality of color filters are arranged in an array shape. | 02-25-2016 |
20160069747 | THERMAL RADIATION SENSOR AND THERMAL IMAGE CAPTURING DEVICE INCLUDING SAME - A thermal radiation sensor may include a thermal absorption layer, an optical resonator surrounding the thermal absorption layer, and a plasmonic absorber provided on the thermal absorption layer, and thus, the thermal radiation sensor may have high sensitivity and may be miniaturized. | 03-10-2016 |
20160118430 | STACKED TYPE IMAGE SENSOR INCLUDING COLOR SEPARATION ELEMENT AND IMAGE PICKUP APPARATUS INCLUDING STACKED TYPE IMAGE SENSOR - A stacked type image sensor including color separation elements, and an image pickup apparatus including the stacked type image sensor, are provided. The stacked type image sensor includes a first light sensing layer including first pixels configured to absorb and detect light of a first wavelength band and transmit light of a second wavelength band and a third wavelength band, and a second light sensing layer disposed to face the first light sensing layer, the second light sensing layer including second pixels configured to detect light of the second wavelength band and third pixels configured to detect light of the third wavelength band. The color separation elements are disposed between the first light sensing layer and the second light sensing layer, and are configured to direct the light of the second wavelength band toward the second pixels, and direct the light of the third wavelength band toward the third pixels. | 04-28-2016 |
Patent application number | Description | Published |
20130087707 | INFRARED THERMAL DETECTOR AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, an infrared thermal detector includes a substrate, a detector spaced apart from the substrate, and a thermal legal configured to transmit a signal from the detector to the substrate. The detector is configured to absorb incident infrared light via localized surface Plasmon resonance, and the detector is configured to change a resistance value according to a temperature change caused by the absorbed infrared light. | 04-11-2013 |
20130112876 | INFRARED DETECTORS - In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate. | 05-09-2013 |
20130161515 | INFRARED RAY DETECTOR AND METHOD OF DETECTING INFRARED RAYS BY USING THE SAME - A infrared ray detector includes a first metal layer; a second metal layer on the first metal layer and configured to absorb infrared rays; a thermistor layer below the second metal layer, the thermistor layer having a resistance that changes according to infrared rays absorbed in the second metal layer; a thermal leg below the thermistor layer and separated from the first metal layer; and a control unit configured to control a gap between the first metal layer and the thermal leg. | 06-27-2013 |
20140175284 | INFRARED DETECTOR INCLUDING BROADBAND LIGHT ABSORBER - An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer. | 06-26-2014 |
20140217289 | INFRARED DETECTOR - An infrared detector may include a substrate, a resonant unit spaced apart from the substrate, the resonant unit configured to generate heat by inducing resonance at a plurality of wavelengths of incident infrared light, a thermistor layer configured to support the resonant unit and be spaced apart from the resonant unit, the thermistor layer having a resistance value that varies according to the heat generated in the resonant unit, and a connection unit configured to support the thermistor layer such that the thermistor layer is spaced apart from the substrate and electrically connect the thermistor layer to the substrate. | 08-07-2014 |
20140246749 | INFRARED DETECTOR AND INFRARED IMAGE SENSOR INCLUDING THE SAME - An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber. | 09-04-2014 |
20140353506 | ELECTROMAGNETIC WAVE SPECTRUM ANALYZER AND INFRARED THERMAL IMAGE ANALYZER INCLUDING MULTIPLE RESONANCE STRUCTURES EACH HAVING DIFFERENT RESONANCE FREQUENCY - An electromagnetic wave spectrum analyzer includes a plurality of resonance structures each having a different resonance frequency, a plurality of thermal legs configured to support the plurality of resonance structures, a substrate including circuit elements configured to detect resistance changes in the plurality of thermal legs, and a signal processing unit configured to analyze a spectrum of incident electromagnetic waves from the resistance changes. The plurality of thermal legs are formed of a thermistor material of which an electrical resistance is changed due to thermal energy of electromagnetic waves absorbed by the plurality of resonance structures. | 12-04-2014 |
Patent application number | Description | Published |
20120280232 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a first photoelectric conversion unit on a substrate and having a first energy bandgap, a second photoelectric conversion unit having a second energy bandgap that is different from the first energy bandgap, the second photoelectric conversion unit being on the first photoelectric conversion unit, and an intermediate unit between the first and second photoelectric conversion units, the intermediate unit including a stack of a first intermediate layer and a second intermediate layer, each of the first intermediate layer and the second intermediate layer having a refractive index that is smaller than that of the first photoelectric conversion unit, the first intermediate layer having a first refractive index, and the second intermediate layer having a second refractive index that is smaller than the first refractive index. | 11-08-2012 |
20130037086 | PHOTOVOLTAIC DEVICE - A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells. | 02-14-2013 |
20130045564 | Method of manufacturing a photovoltaic device - A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells. | 02-21-2013 |
20140193941 | METHOD FOR MANUFACTURING SOLAR CELL - A method for manufacturing a solar cell includes forming a first electrode on a substrate, removing a portion of the first electrode to form a first electrode opening, forming a light absorbing layer on the first electrode and in the first electrode opening, and applying a laser beam to the substrate to create an interface reaction between the first electrode and at least the light absorbing layer, thereby removing a portion of the light absorbing layer to form a light absorbing layer opening. | 07-10-2014 |
20150136198 | SOLAR CELL - A solar cell array includes: a substrate; a plurality of first electrodes on the substrate; photoactive layer on the first electrodes, and including a transmission groove exposing the substrate and a through-groove exposing a neighboring first electrode of the plurality of first electrodes; a second electrode on the photoactive layer and electrically connected with the neighboring first electrode through the through-groove, and the transmission groove and the through-groove are parallel with each other, and the photoactive layer is between the transmission groove and the through-groove. | 05-21-2015 |
Patent application number | Description | Published |
20090045054 | APPARATUS AND METHOD FOR ELECTROMAGNETICALLY DETECTING MICROORGANISM - An apparatus and a method for electromagnetically detecting microorganisms. The apparatus includes a pair of first electrodes which are positioned to be opposite to each other on a measuring cell and are connected to a power supply to generate an electric field around a solution contained in the measuring cell, a magnetic field generating unit which generates a magnetic field around the solution contained in the measuring cell in a perpendicular direction to the electric field, second electrodes which are positioned perpendicularly to both the electric field and the magnetic field, and a voltage measurer which measures the voltage generated between the second electrodes as the microorganisms move in the measuring cell. The apparatus determines the presence, quantity and identity of microorganisms with negative surface charge with improved sensitivity using the Hall effect. | 02-19-2009 |
20090045063 | APPARATUS AND METHOD FOR DETECTING PARTICLES AND MICROORGANISMS USING MAGNETIC FIELD - Disclosed are an apparatus and a method for detecting particles and microorganisms using a magnetic field. The apparatus comprises a magnetic sensor that is provided at an outside of a passage pipe and measures a magnetic field induced by fluid moving in the passage pipe; an electrode that is provided in the passage pipe so as to apply electric current having a predetermined frequency to the fluid moving in the passage pipe to measure impedance; and a signal processing unit that uses an intensity of the magnetic field measured by the magnetic sensor and the impedance measured by the electrode to determine concentrations of particles and microorganisms included in the fluid. According to an embodiment of the invention, using electrical properties of the particles or microorganisms, it is possible to quantitatively analyze and to identify the particles or microorganisms in real time, to improve a measuring accuracy and to manufacture an ultra small-scaled particle and microorganism detecting apparatus having a simple structure. | 02-19-2009 |
20090139399 | APPARATUS AND METHOD FOR COLLECTING AND DETECTING AIRBORNE PARTICLES - An apparatus for collecting airborne particles includes a cyclone into which external air and an absorbing liquid are sprayed to absorb the airborne particles in the external air with the absorbing liquid, a reservoir in fluid communication with the cyclone and which stores the absorbing liquid to be sprayed into the cyclone as an absorbing liquid film, a collector in fluid communication with the cyclone and which collects the absorbing liquid film from the cyclone, and a feedback pipe in fluid communication with the collector and the reservoir and which transports the absorbing liquid film collected in the collector to the reservoir. | 06-04-2009 |
Patent application number | Description | Published |
20090139866 | DEVICE FOR SEPARATING MICRO PARTICLES AND A METHOD FOR FABRICATING THE DEVICE - A device for separating micro particles is provided. The separating device comprises a sample inlet into which a sample containing micro particles is injected; fluid inlets into which fluid is injected to form a flow sheath for the sample; a plurality of outlets through which the micro particles are separated and discharged out; a channel through which the sample and the fluid flow; and a first electrode and a second electrode longitudinally disposed in parallel in the channel. The first and the second electrodes are provided in such a manner that an electrode gap between the first and the second electrodes has a curved shape. The micro particles in the sample are easily separated using a dielectrophoresis characteristic. | 06-04-2009 |
20090282899 | DEVICE FOR DETECTING MICRO PARTICLES IN GAS AND A METHOD FOR FABRICATING THE DEVICE - A device for detecting micro particles in gas, which comprises: an inlet through which a gaseous sample including micro particles flows in; an outlet through which the sample flows out; a channel through which the sample flows from the inlet toward the outlet; a cooling layer which cools and condenses the sample flowing in the channel; a reservoir which is positioned on the cooling layer and collects the condensed sample; a detector which is positioned in the reservoir on the cooling layer and detects the micro particles included in the collected sample; and a heater which heats the outlet portion to produce a pressure difference between the inlet portion and the outlet portion, so that the sample flows through the channel from the inlet toward the outlet. The device for detecting micro particles in gas provides the advantage that micro particles included in gaseous sample can be detected without having to use additional pump or collector, detection time can be reduced, and detection accuracy can be improved. | 11-19-2009 |
20100177374 | Display apparatus using dielectrophoresis and method of manufacturing the display apparatus - Example embodiments relate to a display apparatus using dielectrophoresis and a method of manufacturing the display apparatus. The display apparatus may include a display pixel, wherein the display pixel may include uncharged particles distributed in a dielectric medium that fills a cell area. A pattern electrode unit may be configured to produce a non-uniform electric field in the dielectric medium. A light transmittance of the display pixel may be adjusted by dielectrophoresis of the uncharged particles according to an electric field gradient. | 07-15-2010 |
20100188317 | Reflective type display apparatus using dielectrophoresis and method of manufacturing the reflective type display apparatus - Example embodiments relate to a reflective type display apparatus using dielectrophoresis and a method of manufacturing the reflective type display apparatus. The display apparatus may include a first substrate and a second substrate arranged so as to face each other; a hydrophobic insulating layer formed on the first substrate; a hydrophobic pattern electrode unit arranged to form a non-uniform electric field; a hydrophilic dielectric medium with hydrophobic uncharged particles therein in a space between the first substrate and the second substrate; and a reflective plate arranged under the first substrate. The display apparatus may form an image by using dielectrophoresis of the hydrophobic uncharged particles according to an electric field gradient formed by the hydrophobic pattern electrode unit. | 07-29-2010 |
20100195187 | Transflective display apparatus using dielectrophoresis and method of manufacturing the transflective display apparatus - Example embodiments relate to a transflective display apparatus using dielectrophoresis and a method of manufacturing the transflective display apparatus. The display apparatus may include a display panel; a backlight unit providing the display panel with light for forming an image; and a reflective plate arranged under the backlight unit. The reflective plate may reflect external light incident thereon via the display panel back to the display panel. The display panel may include a plurality of pixel areas transmitting or blocking light using dielectrophoresis. | 08-05-2010 |
20110187764 | 2D/3D SWITCHABLE BACKLIGHT UNIT AND IMAGE DISPLAY DEVICE - A 2D/3D switchable backlight unit and an image display device employing the same are provided. The 2D/3D switchable backlight unit includes a light source, a light guide plate in which light emitted from the light source is total-internal-reflected, and a switch array comprising a plurality of switches that selectively contact a first surface of the light guide plate and emit light by frustrated total internal reflection inside the light guide plate. In 2D mode, each of the switches contacts the first surface of the light guide plate. In 3D mode, some of the switches contact the first surface of the light guide plate. | 08-04-2011 |