Bather
Robert Bather, Taunton, MA US
Patent application number | Description | Published |
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20110055118 | SERVICES PORTAL - An apparatus for monitoring performance of an industrial process includes a service portal for collecting, transmitting and analyzing parameter data from process field devices that includes a network connection that connects to a process control system of the industrial process, a remote collector that collects parameter data from process field devices, a processor that identifies, sorts, and stores the collected parameter data and a communications module for transmitting the stored parameter data to a remote monitoring station for analysis. | 03-03-2011 |
Thomas Bather, Walsrode DE
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20090114169 | THERMOSTAT VALVE - A thermostatted valve used in an internal combustion engine and comprising a housing fitted with at least three ports, namely an engine port to communicate with the engine cooling system, a radiator port to communicate with the radiator, and a bypass port to communicate with a bypass, further comprising a hollow, spherical valve element supported pivotably about a pivot axis within the housing between two end positions, said valve element being fitted with at least two apertures of which one permanently communicates with the engine port and the other is situated in a plane substantially perpendicular to said pivot axis, further comprising a temperature sensor controlled valve element drive, characterized in that the axes of all ports are configured in planes that are approximately perpendicular to the pivot axis of the valve element in that the valve element is approximately a spherical segment or a laminar sphere of which the open side communicates permanently with the engine port, further that the valve element is fitted with at least one feedthrough which in one of the end positions of said valve element is disconnected from the radiator port while in the other end position it faces this radiator port, in that an approximately spherical sealing system is configured in the zone of the radiator port and in that said drive acts on the valve element) excentrically relative to the pivot axis. | 05-07-2009 |
Wayne Bather, Richardson, TX US
Patent application number | Description | Published |
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20090004805 | Damage Implantation of a Cap Layer - A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer. | 01-01-2009 |
20100252887 | Damage Implantation of a Cap Layer - A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer. | 10-07-2010 |
Wayne Bather, Silver Spring, MD US
Patent application number | Description | Published |
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20090170277 | IMPLANT DAMAGE OF LAYER FOR EASY REMOVAL AND REDUCED SILICON RECESS - A method for semiconductor processing is provided, wherein a removal of one or more layers is aided by structurally weakening the one or more layers via ion implantation. A semiconductor substrate is provided having one or more primary layers formed thereon, and a secondary layer is formed over the one or more primary layers. One or more ion species are implanted into the secondary layer, therein structurally weakening the secondary layer, and a patterned photoresist layer is formed over the secondary layer. Respective portions of the secondary layer and the one or more primary layers that are not covered by the patterned photoresist layer are removed, and the patterned photoresist layer is further removed. At least another portion of the secondary layer is removed, wherein the structural weakening of the secondary layer increases a removal rate of the at least another portion of the secondary layer. | 07-02-2009 |
Wayne A. Bather, Richardson, TX US
Patent application number | Description | Published |
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20100270622 | Semiconductor Device Having a Strain Inducing Sidewall Spacer and a Method of Manufacture Therefor - The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure over a substrate, and forming a strain inducing sidewall spacer proximate a sidewall of the gate structure, the strain inducing sidewall configured to introduce strain in a channel region below the gate structure. | 10-28-2010 |
Wayne Anthony Bather, Silver Springs, MD US
Patent application number | Description | Published |
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20080217703 | HIGHLY SELECTIVE LINERS FOR SEMICONDUCTOR FABRICATION - A method for manufacturing an isolation structure is disclosed that protects the isolation structure during etching of a dichlorosilane (DCS) nitride layer. The method involves the formation of a bis-(t-butylamino)silane-based nitride liner layer within the isolation trench, which exhibits a five-fold greater resistance to nitride etching solutions as compared with DCS nitride, thereby allowing protection against damage from unintended over-etching. The bis-(t-butylamino)silane-based nitride layer also exerts a greater tensile strain on moat regions that results in heightened carrier mobility of active regions, thereby increasing the performance of NMOS transistors embedded therein. | 09-11-2008 |