Patent application number | Description | Published |
20080197350 | Thin film transistor and method of forming the same - A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer. | 08-21-2008 |
20080258141 | Thin film transistor, method of manufacturing the same, and flat panel display having the same - A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT. | 10-23-2008 |
20080315193 | Oxide-based thin film transistor, method of fabricating the same, zinc oxide etchant, and a method of forming the same - Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession. | 12-25-2008 |
20080315200 | Oxide semiconductors and thin film transistors comprising the same - Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto. | 12-25-2008 |
20090001432 | Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same - Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer. | 01-01-2009 |
20090003062 | Non-volatile semiconductor device - A nonvolatile semiconductor device according to example embodiments may include a plurality of memory cells on a semiconductor substrate and at least one selection transistor on the semiconductor substrate, wherein the at least one selection transistor may be disposed at a different level from the plurality of memory cells. The at least one selection transistor may be connected to a data line and/or a power source line via a first contact and/or a third contact, respectively. The at least one selection transistor may be connected to the plurality of memory cells via a second contact and/or a fourth contact. The active layer of the at least one selection transistor may contain an oxide. Accordingly, the nonvolatile semiconductor device according to example embodiments may include a selection transistor having a reduced size. | 01-01-2009 |
20090057663 | Oxide thin film transistor and method of manufacturing the same - An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer. | 03-05-2009 |
20090144559 | ELECTRONIC DEVICE BOOTED UP WITH SECURITY, A HASH COMPUTING METHOD, AND A BOOT-UP METHOD THEREOF - A method for authenticating a public key to execute a process with security, including: invoking a process; reading a public key from a first source; calculating a hash value of the public key with a block encryption algorithm, wherein part of the public key is an initial input value of the block encryption algorithm; reading a hash value from a second source; comparing the calculated hash value to the read hash value to determine if the public key is authentic; and executing the process if the public key is authentic. | 06-04-2009 |
20090196084 | Memory chip array - Provided is a memory chip array comprising a plurality of cell arrays and at least one predecoder commonly connected to the plurality of cell arrays, wherein the memory chip array promotes an efficient arrangement structure of the memory chip array and is minimized in area. | 08-06-2009 |
20090242992 | Inverter, logic circuit including an inverter and methods of fabricating the same - An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer. | 10-01-2009 |
20100006834 | Channel layers and semiconductor devices including the same - Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof. | 01-14-2010 |
20100091541 | Stacked memory device and method thereof - A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit. | 04-15-2010 |
20100096628 | Multi-layered memory apparatus including oxide thin film transistor - Provided is a multi-layered memory apparatus including an oxide thin film transistor. The multi-layered memory apparatus includes an active circuit unit and a memory unit formed on the active circuit unit. A row line and a column line are formed on memory layers. A selection transistor is formed at a side end of the row line and the column line. | 04-22-2010 |
20100123158 | Light emitting device and method of manufacturing the same - Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented. | 05-20-2010 |
20100124798 | Method of manufacturing light emitting device - Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs. | 05-20-2010 |
20100140608 | Transistor and method of manufacturing the same - Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other. | 06-10-2010 |
20100148825 | Semiconductor devices and methods of fabricating the same - Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device. | 06-17-2010 |
20100283048 | CMOS image sensor and method of manufacturing the same - Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved. | 11-11-2010 |
20100283509 | Inverter, logic circuit including an inverter and methods of fabricating the same - An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer. | 11-11-2010 |
20100293357 | Method and apparatus for providing platform independent secure domain - A platform independent secure domain providing apparatus, which determines whether an execution environment is to be in a secure domain and a non-secure domain by a secure bit. The apparatus includes a secure monitor that is adapted to generate a branch instruction when a call to a secure code is sensed, turn on the secure bit when the branch instruction has been successfully executed, and turn off the secure bit when the execution of the secure code is finished, an instruction bypass read only memory (ROM) adapted to receive the branch instruction from the secure monitor, and a processor adapted to execute the branch instruction that is fetched from the instruction bypass ROM. | 11-18-2010 |
20110042669 | Thin film transistors and methods of manufacturing the same - A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a second portion of the channel layer. The channel layer may have a double-layer structure, including an upper layer and a lower layer. The upper layer may have a carrier concentration lower than that of the lower layer. The upper layer may be doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer. | 02-24-2011 |
20110141100 | Thin film transistor and method of forming the same - A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer. | 06-16-2011 |
20120260103 | SECURITY CIRCUIT USING AT LEAST TWO FINITE STATE MACHINE UNITS AND METHODS USING THE SAME - A security circuit using at least two finite state machine units for storing data to and reading data from a multiport memory in a pipelined manner and an intermediate memory, for facilitating transfer of data between the at least two finite state machines. The security circuit may be used to perform key setup and/or data ciphering faster. The security circuit may operate in any environment where the key is changed every frame, for example, a wireless LAN application and the security circuit may operate in conjunction with, or as part of, a MAC controller. | 10-11-2012 |
20120282734 | OXIDE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer. | 11-08-2012 |
20120295399 | OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME - Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession. | 11-22-2012 |
20140037093 | METHOD OF MANAGING KEY FOR SECURE STORAGE OF DATA AND APPARATUS THEREFOR - A method and apparatus for managing a key for secure storage of data. The apparatus includes a main controller configured to process a command, a cipher unit configured to encrypt a first key to form an encrypted key or encrypt data to form encrypted data based on a result of the main controller processing the command, and decrypt the encrypted key or the encrypted data based on the result of the main controller processing the command, a hash unit configured to hash the first key according to control of the main controller, a decrypted key memory configured to store the first key, and an encrypted key memory configured to store the encrypted key. | 02-06-2014 |