Shuji Moriya
Shuji Moriya, Shizuoka-Ken JP
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20100202806 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image bearing member; a developer carrying member, contactable to the image bearing member, for carrying a developer to a developing position to develop an electrostatic image formed on the image bearing member with the developer; a supplying member for supplying the developer to the developer carrying member, wherein a peripheral speed of the developer carrying member is not less than 1.05 times and not more than 1.20 times a peripheral speed of the image bearing member, and an arithmetic average roughness Ra is not less than 0.20 times and not more than 0.33 times a volume average particle size of the developer, wherein a potential applied to the supplying member is different from a potential applied to the developer carrying member toward a larger potential of a regular charge polarity of the developer. | 08-12-2010 |
Shuji Moriya, Tokyo JP
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20100096031 | FLUID CONTROL APPARATUS - There is provided a fluid control apparatus which can reduce the number of members and can improve the assembling operation efficiency. | 04-22-2010 |
20110125445 | THERMAL TYPE MASS FLOW METER, AND THERMAL TYPE MASS FLOW CONTROL DEVICE - The present invention provides a thermal type mass flow meter and a thermal type mass flow control device which can lower a measurement error caused by an influence of a thermal siphon phenomenon so as to intend to improve a flow rate measurement precision while it is possible to construct a whole compactly and inexpensively with a simple structure, without using any flow path converting block. | 05-26-2011 |
Shuji Moriya, Nirasaki-Shi JP
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20080295963 | Gas supply system and gas supply accumulation unit of semiconductor manufacturing apparatus - A gas supply system | 12-04-2008 |
20090165872 | Gas Supply Unit and Gas Supply System - A gas supply unit and a gas supply system that are small-sized and inexpensive. The gas supply unit is installed on operation gas conveyance pipeline and has fluid control devices communicated via flow path blocks and controlling operation gas. The gas supply unit has the first flow path block, to one side of which an inlet open/close valve included in the fluid control devices is attached, and also has the second flow path block, to one side of which a purge valve included in the fluid control devices is attached. The first flow path block and the second flow path block are layered in the direction perpendicular to the conveyance direction of the operation gas. The inlet open/close valve and the purge valve are arranged between a mass flow controller installed on the operation gas conveyance pipeline and an installation surface where the unit is installed. | 07-02-2009 |
20090246542 | PLASMA PROCESS APPARATUS, PLASMA PROCESS METHOD, AND OBJECT PROCESSED BY THE PLASMA PROCESS METHOD - A disclosed plasma process apparatus includes an electromagnetic wave generator that generates electromagnetic waves; a vacuum vessel configured to be hermetically connected with an object to be processed, and evacuated to reduced pressures along with the object to be processed hermetically connected to the vacuum vessel; an electromagnetic wave guiding portion configured to guide the electromagnetic waves generated by the electromagnetic wave generator so that plasma is ignited in the vacuum vessel; a gas supplying portion configured to supply a process gas to the object to be processed hermetically connected to the vacuum vessel; an evacuation portion configured to evacuate the object to be processed hermetically connected to the vacuum vessel; and a voltage source configured to apply a predetermined voltage to the object to be processed hermetically connected to the vacuum vessel so that the plasma ignited in the vacuum vessel is guided to the object to be processed. | 10-01-2009 |
Shuji Moriya, Yamanashi JP
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20080251018 | GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS - A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage. | 10-16-2008 |
20090061541 | SEMICONDUCTOR FABRICATION SYSTEM, AND FLOW RATE CORRECTION METHOD AND PROGRAM FOR SEMICONDUCTOR FABRICATION SYSTEM - Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage ( | 03-05-2009 |
20090146089 | PRESSURE TYPE FLOW RATE CONTROL REFERENCE AND CORROSION RESISTANT PRESSURE TYPE FLOW RATE CONTROLLER USED FOR THE SAME - A pressure type flow rate control reference which allows performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. | 06-11-2009 |
20120055402 | PROCESSING APPARATUS - A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit. | 03-08-2012 |
20120234406 | PRESSURE TYPE FLOW RATE CONTROL REFERENCE AND CORROSION RESISTANT PRESSURE TYPE FLOW RATE CONTROLLER USED FOR THE SAME - A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume. | 09-20-2012 |
20140076849 | ETCHING APPARATUS AND ETCHING METHOD - An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism. | 03-20-2014 |
Shuji Moriya, Suntou-Gun JP
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20090003892 | IMAGE FORMING APPARATUS - An image forming apparatus is provided, which controls an appropriate developer amount for a desired image so that an image defect such as an unclear font or a white area is prevented, resulting in a stable image formation for a long term. A developer regulating member has a resistance value varying depending on a voltage to be applied. A control device changes over the voltage to be applied to the developer regulating member during the image formation according to image information and changes a potential difference between the developer carrying member and the developer regulating member. | 01-01-2009 |
Shuji Moriya, Yokohama-Shi JP
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20130216263 | IMAGE FORMING APPARATUS - An image forming apparatus includes: an image bearing member; an electrostatic image forming device; and a developer carrying member. The developer carrying member is provided so as to be rotated in a direction opposite to a rotational direction of the image bearing member at a peripheral speed higher than that of the image bearing member. When the peripheral speed of the image bearing member is Vp (m/sec), the peripheral speed of the developer carrying member is Vs (m/sec), and a time, of movement of the developer from the surface of the developer carrying member to the image bearing member, actually measured in a gap between the image bearing member and the developer carrying member is Tsd (sec), the peripheral speeds Vp and Vs and the time Tsd satisfy the following relationship: (Vs−Vp)×Tsd<3×10 | 08-22-2013 |
20130223861 | IMAGE FORMING APPARATUS - An image forming apparatus includes a photosensitive drum; a first sleeve for carrying a developer containing toner and a carrier having a volume resistivity lower than that of the toner and for developing an image on the drum by rubbing the drum with the developer; a second sleeve for carrying the developer received from the first sleeve and for developing the image by rubbing the drum with the developer carried on the second sleeve; a voltage source for applying a developing bias voltage including a DC voltage component and an AC voltage component to the first sleeve and second sleeve; and a driving device for rotating the first sleeve at a peripheral speed higher than the drum and for rotating the second sleeve at a peripheral speed which is higher than the drum and which is lower than the first sleeve. | 08-29-2013 |
Shuji Moriya, Nirasaki City JP
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20130092264 | FLOW RATE CONTROLLER AND PROCESSING APPARATUS - The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal. | 04-18-2013 |
20140312617 | PIPE JOINT - Provided is a pipe joint which can prevent fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members | 10-23-2014 |
20140333067 | JOINT - Provided is a joint which can decrease the number of kinds of parts. A bolt | 11-13-2014 |
20140357085 | ETCHING METHOD AND NON-TRANSITORY STORAGE MEDIUM - Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F | 12-04-2014 |
Shuji Moriya, Nirasaki-Shi, Yamanashi JP
Patent application number | Description | Published |
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20160086814 | ETCHING METHOD - An etching method includes loading a target substrate W into a chamber | 03-24-2016 |