Patent application number | Description | Published |
20080198513 | MAGNETIC THIN FILM HAVING NON-MAGNETIC SPACER LAYER THAT IS PROVIDED WITH SnO2 LAYER - A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is sandwiched between said pinned layer and said free layer, wherein sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said non-magnetic spacer layer, and said free layer. Said non-magnetic spacer layer has a first layer which includes SnO | 08-21-2008 |
20080198515 | THIN FILM MAGNETIC HEAD HAVING A BIAS MAGNETIC LAYER PROVIDED WITH ANTIFERROMAGNETIC LAYER AND A PINNED LAYER PROVIDED WITH HARD MAGNETIC LAYER - A thin film magnetic head has: a spin valve having a pinned layer whose magnetization direction is fixed relative to an external magnetic field, a first nonmagnetic intermediate layer which is disposed on said pinned layer, and a free layer whose magnetization direction is changed according to the external magnetic field, said free layer being disposed on said first nonmagnetic intermediate layer; and bias magnetic layers for applying a bias magnetic field to said free layer, said bias magnetic layers being provided on both sides of said spin valve with regard to a track width direction thereof. The pinned layer has a hard magnetic layer, a second nonmagnetic intermediate layer which is disposed on said hard magnetic layer, and a ferromagnetic layer which is disposed on said second nonmagnetic intermediate layer. The bias magnetic layer has a bias antiferromagnetic layer, and a bias ferromagnetic layer which is disposed on said bias antiferromagnetic layer. The pinned layer is formed in a manner such that a height direction dimension thereof is longer than a track width direction dimension thereof, and is longer than a height direction dimension of said free layer. | 08-21-2008 |
20080204942 | MAGNETIC THIN FILM HAVING SPACER LAYER THAT CONTAINS CuZn - A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg. | 08-28-2008 |
20080226948 | MAGNETO-RESISTANCE EFFECT ELEMENT HAVING DIFFUSION BLOCKING LAYER AND THIN-FILM MAGNETIC HEAD - A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO. | 09-18-2008 |
20090002893 | MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP STRUCTURE, AND MAGNETIC DISK SYSTEM - The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before. | 01-01-2009 |
20090059442 | CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS - A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface. | 03-05-2009 |
20090059443 | Magnetoresistive element including insulating film touching periphery of spacer layer - An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more. | 03-05-2009 |
20090061258 | CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS - A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface. | 03-05-2009 |
20090067099 | Magnetoresistive element including layered film touching periphery of spacer layer - An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer. | 03-12-2009 |
20090086383 | CPP type magneto-resistive effect device and magnetic disk system - The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back. | 04-02-2009 |
20090128965 | CPP MAGNETO-RESISTIVE ELEMENT PROVIDED WITH A PAIR OF MAGNETIC LAYERS AND NICR BUFFER LAYER - A magnetic field detecting element has a stack which includes a NiCr layer, a first magnetic layer whose magnetization direction varies in accordance with an external magnetic field, a non-magnetic spacer layer, and a second magnetic layer whose magnetization direction varies in accordance with the external magnetic field, said NiCr layer, said first magnetic layer, said spacer layer and said second magnetic layer being disposed in this order and being arranged in contact with each other, wherein a sense current is adapted to flow in a direction that is perpendicular to a film surface of said stack; and a bias magnetic layer which is disposed on a side of said stack, said side being opposite to an air bearing surface of said stack, wherein said bias magnetic layer is adapted to apply a bias magnetic field to said stack in a direction that is perpendicular to said air bearing surface. Both first and second magnetic layers have bcc crystalline structures, and said non-magnetic spacer layer has a film configuration in which an insulating layer or a semiconductor layer is inserted into a metal layer. | 05-21-2009 |
20090135529 | MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction. The magneto-resistive effect unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them. The first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magneto-resistive effect changes so that much higher reliability is achievable. | 05-28-2009 |
20090168264 | Magnetoresistive element and magnetic head - In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers. | 07-02-2009 |
20090174971 | CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS - A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer. | 07-09-2009 |
20090190270 | MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities. | 07-30-2009 |
20090274837 | METHOD OF PRODUCING THE MAGNETORESISTIVE DEVICE OF THE CPP TYPE - The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates. There is also a limited dispersion of the MR change rate with extremely improved reliability. | 11-05-2009 |
20090290264 | MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to | 11-26-2009 |
20090303640 | MAGNETO-RESISTANCE EFFECT ELEMENT PROVIDED WITH CURRENT LIMITING LAYER INCLUDING MAGNETIC MATERIAL - A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio. | 12-10-2009 |
20100027168 | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers - A thin film magnetic head comprise an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer comprises a first exchange coupling magnetic field application layer, a first antimagnetic layer, a second exchange coupling magnetic field application layer, and a second antimagnetic layer. The first antimagnetic layer is provided in contact with the first exchange coupling magnetic field application layer on the rear face of the first exchange coupling magnetic field application layer and which is antimagnetically coupled with the first exchange coupling magnetic field application layer. The second shield layer has the same configuration as that of the first shield layer. | 02-04-2010 |
20100039734 | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers - A thin film magnetic head includes a magneto-resistance (MR) laminated body, a lower shield layer and an upper shield layer that face the first MR magnetic layer. The lower and upper shield layers respectively have first and second exchange coupling magnetic field application layers and first and second antiferromagnetic layers. An exchange coupling intensity relating to an antiferromagnetic coupling between the second exchange coupling magnetic field application layer and the second antiferromagnetic layer is greater in the peripheral area of a projection area than that of the projection area of the upper shield layer side end surface of the MR laminated body to the film surface's orthogonal direction. | 02-18-2010 |
20100053819 | Thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly, magnetic disk device and method of manufacturing thin film magnetic head - The invention is devised to provide a method of manufacturing a thin film magnetic head including a magnetoresistive element having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element | 03-04-2010 |
20100053820 | Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers - A magnetoresistive element includes first and second shield layers, an MR stack disposed therebetween, a first hard magnetic layer for setting the magnetization direction of the first shield layer, and a second hard magnetic layer for setting the magnetization direction of the second shield layer. The MR stack includes a first ferromagnetic layer magnetically coupled to the first shield layer, a second ferromagnetic layer magnetically coupled to the second shield layer, and a spacer layer between the first and second ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in antiparallel directions when any external magnetic field other than a magnetic field resulting from the first and second hard magnetic layers is not applied to the two ferromagnetic layers, and that change their directions in response to an external magnetic field other than the magnetic field resulting from the first and second hard magnetic layers. | 03-04-2010 |
20100067148 | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers - A thin film magnetic head comprises an MR laminated body that has first and second magnetic layers, a nonmagnetic middle layer, and the first and second magnetic layers and the nonmagnetic middle layer are laminated to make contact with each other in respective order. First and second antiferromagnetic layers are provided with the first and second magnetic layers respectively. The first antiferromagnetic layer and/or the second antiferromagnetic layer contains a void part or a thin portion at least in a portion of the projection area toward the orthogonal direction to the film surface of the MR laminated body. | 03-18-2010 |
20100079917 | Magnetoresistive element including a pair of free layers coupled to a pair of shield layers - A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer. | 04-01-2010 |
20100097722 | MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR. | 04-22-2010 |
20100103562 | Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers - A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers. | 04-29-2010 |
20100124617 | Fabrication process for magnetoresistive devices of the CPP type - The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device. | 05-20-2010 |
20100142098 | Method for manufacturing magnetoresistance effect element using simultaneous sputtering of Zn and ZnO - A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential. | 06-10-2010 |
20100149689 | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer - A thin film magnetic head includes a magnetoresistance (MR) layered body that has first and second magnetic layers whose magnetization direction are changed according to an external magnetic field, a nonmagnetic middle layer and where the first magnetic layer, the nonmagnetic middle layer and the second magnetic layer are disposed in a manner of facing each other in respective order, first and second shield layers that are disposed in a manner of sandwiching the MR-stack in the film surface orthogonal direction of the MR-stack facing the first magnetic layer and the second magnetic layer, respectively, and that also serve as an electrode for applying a sense current to the film surface orthogonal direction of the MR-stack; and a bias magnetic field application means that is disposed on an opposite surface of an air bearing surface (ABS) of the MR-stack, and that applies a bias magnetic field to the MR-stack in the direction orthogonal to the ABS. The first shield layer has a first exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the first magnetic layer, and that transmits to the first magnetic layer an exchange coupling magnetic field in the direction in parallel with the ABS, and that includes an amorphous layer, and has a first antiferromagnetic layer that is disposed on a rear surface of the first ECMF application layer viewed from the first magnetic layer in a manner of facing the first ECMF application layer, and that is exchange-coupled with the first ECMF application layer. The second shield layer has a second exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the second magnetic layer, and that transmits to the second magnetic layer the exchange coupling magnetic field in a direction in parallel with the ABS; and a second antiferromagnetic layer that is disposed on a rear surface of the second ECMF application layer viewed from the second magnetic layer, and that is exchange-coupled with the second ECMF application layer. | 06-17-2010 |
20100163519 | Method for manufacturing CPP-type magnetoresistance effect element - A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer. | 07-01-2010 |
20100177440 | Thin film magnetic head and magnetic disk device - Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced. | 07-15-2010 |
20100214700 | Thin film magnetic head provided with dual synthetic free layers - A thin film magnetic head includes a first through fourth free layers, a spacer layer, and a bias magnetic field application layer. The first and second free layers are magnetized in opposite directions of each other in the orthogonal direction to the ABS when the bias magnetic field is applied to the first and second free layers, and are exchange-coupled such that an angle between the magnetization direction of the bias magnetic field and the first free layer is acute and such that an angle between the magnetization direction of the bias magnetic field and the second free layer is acute. Similarly, the third and fourth layers have the same configuration. | 08-26-2010 |
20100214701 | Magnetoresistive effect element in cpp-type structure and magnetic disk device - An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer | 08-26-2010 |
20100232066 | Magneto-resistive effect element provided with GaN spacer layer - A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element. | 09-16-2010 |
20100232073 | Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer - A thin film magnetic head includes a magnetoresistive effect (MR) laminated body that has the following structure: first and second magnetic layers in which the magnetization direction of at least one of the magnetic layers changes according to an external magnetic field; the first magnetic layer is provided at a lower side of a laminated direction; the second magnetic layer is provided at an upper side of the laminated direction; a non-magnetic intermediate layer made of ZnO sandwiched between the first and the second magnetic layers; a first intermediate interface layer is provided at the interface between the first magnetic layer and the non-magnetic intermediate layer; and a second intermediate interface layer is provided at the interface between the non-magnetic intermediate layer and the second magnetic layer. At least the first intermediate interface layer contains Ag and Zn, or Au and Zn. | 09-16-2010 |
20100232074 | Magnetoresistive effect element and magnetic disk device - A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps. | 09-16-2010 |
20110007420 | MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE - An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm | 01-13-2011 |
20110007421 | MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE - An MR element in a CPP-GMR structure includes a first ferromagnetic layer, a spacer layer that is epitaxially formed on the first ferromagnetic layer, a second ferromagnetic layer that is located on the spacer layer, and that is laminated with the first ferromagnetic layer to sandwich the spacer layer. A sense current flows along a lamination direction of the first and second ferromagnetic layers. Angle of magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer relatively change due to an externally applied magnetic field. | 01-13-2011 |
20110051295 | Magnetoresistive effect element in CPP-type structure and magnetic disk device - In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio. | 03-03-2011 |
20110216634 | HEAT-ASSISTED MAGNETIC RECORDING HEAD INCLUDING PLASMON GENERATOR - A plasmon generator has a near-field light generating part located in a medium facing surface. The plasmon generator has an outer surface including a plasmon exciting surface and a plasmon propagating surface that face toward opposite directions. The plasmon exciting surface is substantially in contact with an evanescent light generating surface of a waveguide's core. The plasmon propagating surface is in contact with a dielectric layer that has a refractive index lower than that of the core. The plasmon exciting surface includes a first width changing portion. The plasmon propagating surface includes a second width changing portion. Each of the first and second width changing portions has a width that decreases with decreasing distance to the medium facing surface, the width being in a direction parallel to the medium facing surface and the evanescent light generating surface. | 09-08-2011 |
20110222190 | TEMPERATURE ASSISTED MAGNETIC RECORDING ELEMENT HAVING GROUNDED NEAR FIELD LIGHT GENERATOR - A magnetic recording element has a substrate, a main pole for recording that includes an edge part positioned on an air bearing surface (ABS), a waveguide through which a laser light propagates, and a plasmon generator. The plasmon generator is positioned away from the substrate and extends to the ABS as facing a part of the waveguide. The plasmon generator has a propagation edge extending in a longitudinal direction. The propagation edge has an overlapping part overlapping the waveguide in the longitudinal direction, and a near field light generator positioned on the ABS and located in the vicinity of the edge part of the recording magnetic pole. The overlapping part of the propagation edge is coupled with the laser light propagating through the waveguide in a surface plasmon mode so that a surface plasmon is generated. The propagation edge propagates the surface plasmon generated in the overlapping part to the near field light generator. The magnetic recording element further has a grounding element electrically connecting the plasmon generator and the substrate. | 09-15-2011 |
20110228419 | HEAT-ASSISTED MAGNETIC RECORDING HEAD INCLUDING PLASMON GENERATOR - A plasmon generator has an outer surface including a propagation edge, and has a near-field light generating part lying at an end of the propagation edge and located in a medium facing surface. The propagation edge faces an evanescent light generating surface of a waveguide's core with a predetermined distance therebetween and extends in a direction perpendicular to the medium facing surface. The propagation edge is arc-shaped in a cross section parallel to the medium facing surface. The plasmon generator includes a shape changing portion in which a radius of curvature of the propagation edge in the cross section parallel to the medium facing surface continuously decreases with decreasing distance to the medium facing surface. | 09-22-2011 |
20110228420 | HEAT-ASSISTED MAGNETIC RECORDING HEAD INCLUDING PLASMON GENERATOR - A plasmon generator has an outer surface including a plasmon exciting part, and has a near-field light generating part located in a medium facing surface. The plasmon exciting part faces an evanescent light generating surface of a waveguide's core with a predetermined distance therebetween. The outer surface of the plasmon generator further includes first and second inclined surfaces that are each connected to the plasmon exciting part. The first and second inclined surfaces increase in distance from each other with increasing distance from the plasmon exciting part. The plasmon generator includes a shape changing portion where the angle of inclination of each of the first and second inclined surfaces with respect to the evanescent light generating surface increases continuously with decreasing distance to the medium facing surface. | 09-22-2011 |
20110235478 | WAVE GUIDE THAT ATTENUATES EVANESCENT LIGHT OF HIGHER ORDER TM MODE - A waveguide has a core through which laser light can propagate in a TM mode, that has a rectangular cross section perpendicular to a propagative direction of the laser light, and through which the laser light can propagate in a fundamental mode in which only one portion exists on the cross section of the core where a light intensity of the laser light becomes maximal, and a higher order mode in which two or more portions exist where the light intensity becomes maximal, a clad surrounding the core, and a light absorbing element in the clad, and wherein a distance between the light absorbing element and the core is shorter than a penetration length of evanescent light in the higher order mode, but is longer than a penetration length of evanescent light in the fundamental mode. | 09-29-2011 |
20110262632 | Magnetoresistive Effect Element, Thin-Film Magnetic Head, Method for Manufacturing Magnetoresistive Effect Element, and Method for Manufacturing Thin-Film Magnetic Head - A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer. | 10-27-2011 |
20120014230 | MAGNETIC RECORDING ELEMENT USED FOR THERMALLY-ASSISTED MAGNETIC RECORDING - A magnetic recording element that faces a recording medium and that executes a magnetic recording while the recording medium is heated, the element including a waveguide that is configured with a core and a cladding, the core, through which laser light propagates, including an enlarged part, which is enlarged at an air bearing surface facing the recording medium; and the cladding surrounding a periphery of the core. | 01-19-2012 |
20120073120 | METHOD FOR MANUFACTURING HEAD INCLUDING LIGHT SOURCE UNIT FOR THERMAL ASSIST - Provided is a method for manufacturing a thermally-assisted magnetic recording head in which a light source unit including a light source and a slider including an optical system are joined. The method comprises steps of: adhering by suction the light source unit with a back holding jig; bringing the light source unit into contact with a slider back surface of the slider; applying a load to a load application surface of the light source unit by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; positioning the light source unit apart from the slider, and then aligning the light source with the optical system; bringing again the light source unit into contact with the slider; and applying a load again to the load application surface to bring the joining surface into conformity with the slider back surface. Thus, the conformity between them can be significantly increased, thereby achieving adequately strong junction and adequately high accuracy in position. | 03-29-2012 |
20120075966 | THERMALLY-ASSISTED MAGNETIC RECORDING HEAD - A thermally-assisted magnetic recording head that includes an air bearing surface facing a recording medium and that performs a magnetic recording while heating the recording medium includes a waveguide configured with a core through which light propagates and a cladding that surrounds a periphery of the core and that includes at least a portion extending to the air bearing surface; and a heat radiation layer that is embedded in the cladding that surrounds the periphery of the core on the air bearing surface, and that is made of a material having a higher thermal conductivity coefficient than the cladding. | 03-29-2012 |
20120075967 | THERMALLY ASSISTED MAGNETIC RECORDING HEAD - A thermally assisted magnetic head includes a magnetic pole that generates a writing magnetic field from an air bearing surface (ABS); a waveguide through which light propagates; and a plasmon generator generating near-field light from a near-field light generating end surface by coupling the light thereto in a surface plasmon mode. The magnetic pole includes a convex part protruding in a substantially V-shape along a light propagation direction of the waveguide. The plasmon generator includes a substantially V-shaped part contacting the convex part, and as seen from a side of the ABS, a thickness of the plasmon generator in a direction perpendicular to convex part contacting sides gradually increases from an end in a direction away from the waveguide, the convex part contacting sides being linear sides that form the substantially V-shaped part of the plasmon generator and contacting the convex part. | 03-29-2012 |
20120084969 | METHOD OF MANUFACTURING THERMAL ASSISTED MAGNETIC WRITE HEAD - A method of manufacturing a thermally-assisted magnetic write head is provided. The method includes steps of: forming a laminate structure including the waveguide; the plasmon generator, and the magnetic pole in order; performing a first polishing process to planarize an end surface of the laminate structure; performing a first etching process to remove impurity attached on the end surface of the laminate structure, and to allow the plasmon generator to be recessed from the waveguide and the magnetic pole, thereby forming a recessed region on the end surface of the laminate structure; forming a protection layer on the end surface of the laminate structure such that at least the recessed region is filled; and performing a second polishing process on the end surface of the laminate structure formed with the protection layer until the plasmon generator is exposed, thereby completing the air bearing surface. | 04-12-2012 |
20120090162 | METHOD FOR MANUFACTURING HEAD INCLUDING LIGHT SOURCE UNIT FOR THERMAL ASSIST - Provided is a method for manufacturing a thermally-assisted magnetic recording head including a light source unit with a light source and a slider with an optical system. The method comprises steps of: adhering by suction the light source unit with a back holding jig; moving the back holding jig, then aligning a light-emission center of the light source with a light-receiving end surface of the optical system in directions within a slider back surface of the slider; bringing the light source unit into contact with the slider back surface, with a suction surface of the back holding jig tilted from the normal to the slider back surface; applying a load to a load application surface of the unit substrate by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; and bonding the light source unit and the slider. This method can improve the conformity, thereby achieving adequately strong junction and adequately high accuracy in position. | 04-19-2012 |
20120117791 | METHOD FOR MANUFACTURING A THERMALLY-ASSISTED MAGNETIC HEAD - In a method for manufacturing a thermally-assisted magnetic head that includes a slider and an LD unit, the slider including an air bearing surface (ABS) that faces a recording medium and including a waveguide with a core for light propagation that extends from a light entering surface, which is different from the ABS, to the ABS, the LD unit being attached to the light entering surface of the slider, and the thermally-assisted magnetic head performing magnetic recording while heating the recording medium with near-field light that is excited from linearly polarized laser light, the LD unit is disposed in a position facing the light entering surface of the slider, a photo detector is disposed in a position facing the ABS of the slider, and a polarizer transmitting only light having a polarization component that is orthogonal to a polarization direction of the linearly polarized laser light is disposed between the ABS and the photo detector. An LD of the LD unit is activated, and the linearly polarized laser light is enabled to enter into the core from the light entering surface of the slider. Light radiated from the ABS is enabled to enter into the polarizer, and an alignment of the slider and the LD unit is performed while the photo detector detects light that is transmitted through the polarizer. | 05-17-2012 |
20120147716 | THERMALLY-ASSISTED MAGNETIC HEAD - A thermally-assisted magnetic head that has an air bearing surface (ABS) facing a recording medium and that performs magnetic recording while heating the recording medium includes: a magnetic recording element that includes a pole of which an edge part is positioned on the ABS and which generates magnetic flux traveling to the recording medium; a waveguide that is configured with a core through which light propagates and a cladding, surrounding a periphery of the core, at least one part of which extends to the ABS; a plasmon generator that faces a part of the core and that extends toward the ABS side; and a bank layer that is positioned between the plasmon generator and the pole, and of which an edge part on the ABS side protrudes relative to the plasmon generator. | 06-14-2012 |
20120188859 | THERMALLY-ASSISTED MAGNETIC HEAD - A thermally-assisted magnetic head that includes an air bearing surface facing a recording medium and that performs magnetic recording while heating the recording medium includes: a magnetic recording element including a pole of which one edge part is positioned on the air bearing surface and that generates magnetic flux traveling toward the magnetic recording medium; a waveguide configured with a core through which light propagates and a cladding, at least one part of which extends to the air bearing surface, surrounding the periphery of the core; a plasmon generator that faces a part of the core and that extends to the air bearing surface. The plasmon generator is configured with a first part and a second part that are joined; the first part that is positioned on the air bearing surface side and that is made of a high melting point material, and the second part that is positioned away from the air bearing surface and that is made of a material with a small value ∈″, which is an imaginary component of permittivity. | 07-26-2012 |
20130033972 | THERMALLY-ASSISTED MAGNETIC RECORDING HEAD, HEAD GIMBAL ASSEMBLY AND MAGNETIC RECORDING DEVICE - A thermally-assisted magnetic recording head that includes a pole that generates a writing magnetic field, a waveguide through which light propagates, a plasmon generator that surface-evanescent-couples with the light propagating through the waveguide, wherein the plasmon generator includes a portion where a cross-sectional area gradually decreases as going toward a depth side from an air bearing surface when being observed from a cross section parallel to the air bearing surface. The volume of the plasmon generator can be decreased and an exposed area of a front surface on the air bearing surface can be increased. When a thermal expansion from the temperature increase occurs in the plasmon generator, a rate that the plasmon generator projects from the air bearing surface is suppressed to extremely low levels. Accordingly, a chronological degradation of output can be suppressed and thermally-assisted recording having a high and long-term reliability is achieved. | 02-07-2013 |
20130139378 | METHOD OF MANUFACTURING THERMALLY-ASSISTED MAGNETIC RECORDING HEAD AND ALIGNMENT APPARATUS - A method of manufacturing a thermally-assisted magnetic recording head includes: providing a light source unit including a light source; providing a substrate having a thermally-assisted magnetic recording head section thereon, the thermally-assisted magnetic recording head section including a magnetic pole, a plasmon generator, and an optical waveguide; inserting a metal between the light source unit and the substrate, and thus allowing the metal to be melted; and performing alignment between the light source unit and the thermally-assisted magnetic recording head section under application of pressure in a direction that allows the light source unit and the substrate to approach each other, while maintaining the metal melted. | 06-06-2013 |
20130219698 | METHOD OF MANUFACTURING THERMALLY-ASSISTED MAGNETIC RECORDING HEAD - A method of manufacturing a thermally-assisted magnetic recording head includes: providing a bar and a plurality of light source units, the bar including a plurality of thermally-assisted magnetic recording head sections arranged in a first direction, and each of the light source units including a substrate and a light source; and bonding a second surface of the substrate to the bar with an adhesive layer in between, where the plurality of light source units are so aligned to the respective thermally-assisted magnetic recording head sections on the bar, as to allow a first surface of the substrate, which supports the light source, to be parallel to the first direction, the bonding allowing the substrates of the light source units to be irradiated with a first laser beam and allowing the bar to be irradiated with a second laser beam, to thereby allow the adhesive layer to be melted. | 08-29-2013 |
20130250742 | THERMALLY-ASSISTED MAGNETIC RECORDING HEAD, HEAD GIMBALS ASSEMBLY, HEAD ARM ASSEMBLY, MAGNETIC DISK UNIT, AND LIGHT TRANSMISSION UNIT - The thermally-assisted magnetic recording head includes: a laser light source having an emission surface, the emission surface allowing laser light to be emitted therefrom; a waveguide having a core and a cladding, the core allowing the laser light emitted from the laser light source to propagate therethrough, and the cladding surrounding the core; a magnetic pole; and a plasmon generator. Each of the core and the cladding has an end surface facing the emission surface, and the end surface of the cladding suppresses returning of the laser light to the laser light source. | 09-26-2013 |
20130258824 | THERMALLY-ASSISTED MAGNETIC RECORDING HEAD HAVING TEMPERATURE SENSOR EMBEDDED ON DIELECTRIC WAVEGUIDE - A thermal assisted magnetic recording head includes a dielectric waveguide that is configured to propagate propagation light a metal waveguide that is provided facing the dielectric waveguide and that couples to the propagation light propagating through the dielectric waveguide in a surface plasmon mode, thereby generating and propagating surface plasmon, a near-field light generator that is exposed on an air bearing surface facing a magnetic recording medium either at an end part of the metal waveguide or at a position facing the end part of the metal waveguide, and that generates near-field light from the surface plasmon, a magnetic pole for magnetic recording that is exposed on the air bearing surface, and a temperature sensor that is arranged inside the dielectric waveguide. | 10-03-2013 |
20140249793 | CONTROL METHOD, CONTROL SERVER, AND COMPUTER-READABLE RECORDING MEDIUM - A control server according to an embodiment sorts a plurality of notebook PCs into a plurality of groups so that the total value of the remaining amounts is a value similar to the total value of the remaining amounts of the rechargeable batteries of a plurality of notebook PCs included in a different group. The control server according to the embodiment performs local search individually on the sorted groups, and generates a control plan for the individual notebook PCs. | 09-04-2014 |
20140269233 | THERMALLY ASSISTED RECORDING HEAD UTILIZING LASER LIGHT WITH LIMITED WAVELENGTH RANGE - A thermally assisted magnetic recording head includes core that propagates laser light as propagation light, a near-field light generator that faces a portion of the core and extends to an air bearing surface (ABS), the near-field light generator coupled to the propagation light propagating through the core so as to generate a surface plasmon, propagating the surface plasmon to an end part facing the ABS, and generating near-field light at the end part to irradiate the near-field light to a magnetic recording medium, a main magnetic pole layer provided in the vicinity of the near-field light generator where an end part is positioned on the ABS, a laser diode that generates laser light of wavelength 890 nm to 1,000 nm and enters the laser light into the core, and a photodiode provided on a silicon substrate measures an intensity of the laser light entering from the laser diode to the core. | 09-18-2014 |