Kiritani
Hideki Kiritani, Kitakyushu-Shi JP
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20140027885 | THREE-DIMENSIONAL INTEGRATED CIRCUIT LAMINATE, AND INTERLAYER FILLER FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT LAMINATE - To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. | 01-30-2014 |
Hideki Kiritani, Chiyoda-Ku JP
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20140349105 | AGGLOMERATED BORON NITRIDE PARTICLES, COMPOSITION CONTAINING SAID PARTICLES, AND THREE-DIMENSIONAL INTEGRATED CIRCUIT HAVING LAYER COMPRISING SAID COMPOSITION - To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. | 11-27-2014 |
Masahide Kiritani, Hyogo JP
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20090002052 | SEMICONDUCTOR DEVICE - A level shifter circuit of the present invention includes a level shifter for converting a low-voltage signal to a high-voltage signal, and is provided with a unit that sets a voltage condition of an input signal to a transistor for input of the level shifter, when a high-voltage power supply is inputted to the level shifter circuit of the present invention before a low-voltage power supply. | 01-01-2009 |
20100244924 | SEMICONDUCTOR DEVICE - A level shifter circuit of the present invention includes a level shifter for converting a low-voltage signal to a high-voltage signal, and is provided with a unit that sets a voltage condition of an input signal to a transistor for input of the level shifter, when a high-voltage power supply is inputted to the level shifter circuit of the present invention before a low-voltage power supply. | 09-30-2010 |
Masahide Kiritani, Tokyo JP
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20160099695 | SEMICONDUCTOR INTEGRATED CIRCUIT, VARIABLE GAIN AMPLIFIER, AND SENSING SYSTEM - Provided is a semiconductor integrated circuit including a pad Pd | 04-07-2016 |
Mika Kiritani, Kawasaki-Shi JP
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20080265443 | Semiconductor device and method of manufacturing the same - A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin. | 10-30-2008 |
20090111218 | STACK MCP AND MANUFACTURING METHOD THEREOF - A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semiconductor chip with the adhesive layer disposed therebetween and is wire-bonded to the printed circuit board by wire bonding. Likewise, at least one semiconductor chip is sequentially stacked on the thus attained semiconductor structure to form a stack MCP. | 04-30-2009 |
20120235282 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device manufacturing method is disclosed. The method comprises (a) forming cut grooves in a front surface of a semiconductor wafer on which semiconductor elements are formed to partition the front surface into a plurality of regions, (b) disposing partly a resin in the cut grooves, (c) adhering a protection tape on the front surface of the semiconductor wafer, (d) thinning the semiconductor wafer by grinding a rear surface of the semiconductor wafer to reach the cut grooves, (e) forming an adhesive agent layer on the rear surface of the semiconductor wafer, and (f) dividing the semiconductor wafer into a plurality of semiconductor chips by cutting the adhesive agent layer together with the disposed resin along the cut grooves. | 09-20-2012 |
Norihiko Kiritani, Kanagawa JP
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20110017991 | SEMICONDUCTOR DEVICE - In this junction element | 01-27-2011 |
Norihiko Kiritani, Yokosuka-Shi JP
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20090289355 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE - A semiconductor manufacturing apparatus which performs a rapid heat treatment in which metallic thin films | 11-26-2009 |