Patent application number | Description | Published |
20080207003 | PRODUCTION METHOD OF SEMICONDUCTOR APPARATUS - In order to provide a production method of a semiconductor apparatus that can form a film, even in the case of forming a carbon film, on a semiconductor substrate while maintaining an improved optical transparency at a visible band and while maintaining a preferable adhesion property, the semiconductor apparatus production method includes: a first step of generating and controlling plasma by using oxygen and conducting a plasma operation on a surface of a semiconductor substrate set inside a reaction chamber in which a film is formed on the surface of the semiconductor substrate; and a second step of generating and controlling plasma by using hydrogen and conducting a plasma operation on the surface of the semiconductor substrate set inside the reaction chamber, wherein the second step is conducted after the first step and before forming the film on the surface of the semiconductor substrate inside the reaction chamber. | 08-28-2008 |
20080227298 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The object of the present invention is to embed an insulating film in a hole having a high aspect ratio and a small width without the occurrence of a void. The thickness of a polishing stopper layer is reduced by making separate layers respectively serve as a mask during forming the hole in a semiconductor substrate, and a stopper during removing the insulating film filled in the hole. | 09-18-2008 |
20080305611 | COATING COMPOSITION FOR FORMING OXIDE FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME - A coating composition for forming an oxide film, which can suppress the phenomenon of an increased wet etching rate caused by a part of the SOG film embedded inside a groove becoming low-density, and which can suppress the volume expansion coefficient to a low level, and a method for producing a semiconductor device using the same are provided. An oxide film is formed inside a groove by: coating a coating composition for forming an oxide film, which contains a polysilazane or a hydrogenated silsesquioxane, and a polysilane, on a substrate having a groove; and thereafter heat treatment in an oxidizing atmosphere. This method is suitable for forming a device isolation region and a wiring interlayer dielectric film. | 12-11-2008 |
20090045485 | CAPACITOR, METHOD OF MANUFACTURING CAPACITOR, CAPACITOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MEMORY DEVICE - The present invention provides a capacitor including: an under electrode; an upper electrode; and a dielectric film which is provided between the under electrode and the upper electrode, wherein at least a portion of the dielectric film is composed of an aluminum oxide film deposited by an atomic layer deposition method and a titanium oxide film deposited by the atomic layer deposition method. An aluminum composition ratio x and a titanium composition ratio y in the dielectric film preferably comply with 7≦[x/(x+y)]×100≦35. | 02-19-2009 |
20090057738 | CAPACITOR FOR SEMICONDUCTOR DEVICE - A capacitor for a semiconductor device having a dielectric film between an upper electrode and a lower electrode is featured in that the dielectric film includes an alternately laminated film of hafnium oxide and titanium oxide at an atomic layer level. | 03-05-2009 |
20090061329 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND HARD MASK - A semiconductor device manufacturing method includes forming a target film to be processed on a semiconductor substrate in which a semiconductor element has been formed; forming a hard mask on the target film; and patterning the target film. The hard mask is a multilayer film including a conductive carbon film and a transparent carbon film which are sequentially stacked on the target film. The formation of the hard mask may include sequentially stacking the conductive carbon film and the transparent carbon film on the target film on the semiconductor substrate; sequentially stacking an intermediate layer and a resist layer on the transparent carbon film; patterning the resist layer; patterning the intermediate layer by using the patterned resist layer as a mask; and patterning the conductive carbon film and the transparent carbon film by using the patterned intermediate layer as a mask. | 03-05-2009 |
20090093120 | HOLE PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A hole pattern forming method that forms a fine hole pattern in a work target layer that is formed on a semiconductor substrate, includes: forming a three-layer structure by laminating a carbon film layer, an intermediate mask layer, and a photoresist layer in that order on the work target layer; after patterning a hole pattern in the photoresist layer, patterning the hole pattern in the intermediate mask layer with the patterned photoresist layer serving as a mask; forming a sidewall oxide film on exposed portions of the photoresist layer, the intermediate mask layer, and the carbon film layer; forming a sidewall portion that includes the sidewall oxide film on inner wall surfaces of the hole pattern by etching back the sidewall oxide film; and after patterning a fine hole pattern in the carbon film layer with the sidewall portion and the intermediate mask layer serving as a mask, patterning the fine hole pattern in the work target layer with the patterned carbon film layer serving as a mask. | 04-09-2009 |
20090146254 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to support the plurality of the cylindrical lower electrodes; a pore portion provided in the plate-like support; a dielectric film covering the entire surface of the cylindrical lower electrodes and the plate-like support in which the pore portion is formed; and an upper electrode formed on the surface of the dielectric film, wherein the boundary length of the part on the side surface of the cylindrical lower electrode which is exposed on the pore portion is shorter than the boundary length of the part on the side surface of the cylindrical lower electrode which is not exposed on the pore portion. | 06-11-2009 |
20100035402 | Method for manufacturing semiconductor device - A method for manufacturing a semiconductor device includes forming a first interlayer insulating film over a semiconductor substrate; forming a first opening in the first interlayer insulating film; forming a second interlayer insulating film on the first interlayer insulating film such that the first opening is not filled; and forming a second opening in the second interlayer insulating film such that the second opening is connected to the first opening. | 02-11-2010 |
20100184268 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A PORTION IN WHICH A GROOVE IS EMBEDDED WITH AN OXIDE FILM - A coating composition for forming an oxide film, which can suppress the phenomenon of an increased wet etching rate caused by a part of the SOG film embedded inside a groove becoming low-density, and which can suppress the volume expansion coefficient to a low level, and a method for producing a semiconductor device using the same are provided. An oxide film is formed inside a groove by: coating a coating composition for forming an oxide film, which contains a polysilazane or a hydrogenated silsesquioxane, and a polysilane, on a substrate having a groove; and thereafter heat treatment in an oxidizing atmosphere. This method is suitable for forming a device isolation region and a wiring interlayer dielectric film. | 07-22-2010 |
20110014797 | METHOD FOR Sr-Ti-O-BASED FILM FORMATION AND STORAGE MEDIUM - A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O | 01-20-2011 |
20110028002 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of forming a semiconductor device includes the following processes. A metal nitride film is formed with a thickness of 3 nm or less over a substrate. The metal nitride film is oxidized to form a metal oxide film. A set of the formation of the metal nitride film and the oxidation of the metal nitride film is repeated, to form a stack of the metal oxide films over the substrate. | 02-03-2011 |
20110052810 | FILM FORMING METHOD AND STORAGE MEDIUM - An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O | 03-03-2011 |
20120058637 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method of manufacturing a semiconductor device, includes: forming a first and second interconnect trenches adjacent to each other in an interlayer insulating film; providing a first interconnect and a space thereon within the first interconnect trench, and a second interconnect and a space thereon within the second interconnect trench; forming a first trench larger in width from the first interconnect trench and a second trench larger in width from the second interconnect trench, by conducting isotropic-etching; and forming a first insulating film within the first trench and a second insulating film within the second trench by filling an insulating material in the first trench and the second trench. | 03-08-2012 |
20120061800 | CAPACITOR ELEMENT, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE - A semiconductor device includes a first capacitive insulating film, a first electrode, and a first barrier film. The first electrode has a first surface containing nitrogen. The first barrier film is between the first capacitive insulating film and the first electrode. The first barrier film faces the first surface of the first electrode. The first barrier film includes zinc oxide. The first barrier film is conductive. | 03-15-2012 |
20120064689 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode. | 03-15-2012 |
20120064690 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode made of titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide, in which at least the uppermost layer of the dielectric film is formed by an atomic layer deposition (ALD) method on the lower electrode, forming a first protective film on the dielectric film without exceeding the film forming temperature of the ALD method over 70° C., and forming an upper electrode made of a titanium nitride on the first protective film. | 03-15-2012 |
20120115300 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode. | 05-10-2012 |
20120187537 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to support the plurality of the cylindrical lower electrodes; a pore portion provided in the plate-like support; a dielectric film covering the entire surface of the cylindrical lower electrodes and the plate-like support in which the pore portion is formed; and an upper electrode formed on the surface of the dielectric film, wherein the boundary length of the part on the side surface of the cylindrical lower electrode which is exposed on the pore portion is shorter than the boundary length of the part on the side surface of the cylindrical lower electrode which is not exposed on the pore portion. | 07-26-2012 |
20120244721 | FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM - A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure. | 09-27-2012 |
20120254572 | INFORMATION TERMINAL AND SECURITY MANAGEMENT METHOD - An information terminal of an embodiment has a communication section, a nonvolatile storage medium and a control section. The communication section performs transmission and reception with a predetermined server via the Internet. The nonvolatile storage medium stores information about a last date and time when an operating system is logged into. When the communication section receives a special command from the predetermined server, the control section performs control to transmit the information about the last date and time when the operating system is logged into, which is stored in the nonvolatile storage medium, to the predetermined server via the Internet. | 10-04-2012 |
20130045582 | CAPACITOR INSULATING FILM, METHOD OF FORMING THE SAME, CAPACITOR AND SEMICONDUCTOR DEVICE USING THE CAPACITOR INSULATING FILM - A capacitor insulating film may include, but is not limited to, strontium, titanium, and oxygen. The capacitor insulating film has a ratio of a spectrum intensity of ( | 02-21-2013 |
20130119514 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode. | 05-16-2013 |
20130134556 | SEMICONDUCTOR DEVICE - This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to support the plurality of the cylindrical lower electrodes; a pore portion provided in the plate-like support; a dielectric film covering the entire surface of the cylindrical lower electrodes and the plate-like support in which the pore portion is formed; and an upper electrode formed on the surface of the dielectric film, wherein the boundary length of the part on the side surface of the cylindrical lower electrode which is exposed on the pore portion is shorter than the boundary length of the part on the side surface of the cylindrical lower electrode which is not exposed on the pore portion. | 05-30-2013 |