Patent application number | Description | Published |
20090001581 | METAL LINE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A metal line of a semiconductor device includes an insulating layer in which damascene patterns have been formed, a first metal layer formed on sidewalls and bottom surfaces of the damascene patterns, a second metal layer formed on the first metal layer within the damascene patterns and having a lower resistance than the first metal layer, and a third metal layer formed on the second metal layer. | 01-01-2009 |
20090001583 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention relates to a semiconductor device and a method of fabricating the same. In an embodiment of the present invention, an insulating layer in which contact holes are formed is formed over a semiconductor substrate in which lower metal lines are formed. A barrier metal layer, having a stack structure of a first tungsten (W) layer and a tungsten nitride (WN) layer, is formed within the contact holes. Contact plugs are formed within the contact holes. | 01-01-2009 |
20090004814 | METHOD OF FABRICATING FLASH MEMORY DEVICE - The invention relates to a method of fabricating a flash memory device. According to the method, select transistors and memory cells are formed on, and junctions are formed in a semiconductor substrate. The semiconductor substrate between a select transistor and an adjacent memory cell are over etched using a hard mask pattern. Accordingly, migration of electrons can be prohibited and program disturbance characteristics can be improved. Further, a void is formed between the memory cells. Accordingly, an interference phenomenon between the memory cells can be reduced and, therefore, the reliability of a flash memory device can be improved. | 01-01-2009 |
20090004817 | METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE - A method of forming an isolation layer of a semiconductor device is disclosed herein, the method comprising the steps of providing a semiconductor substrate in which a tunnel insulating layer and a charge storage layer are formed on an active area and a trench is formed on an isolation area; forming a first insulating layer for filling a lower portion of the trench; forming a porous second insulating layer on the first insulating layer for filling a space between the charge storage layers; forming a third insulating layer on a side wall of the trench and the second insulating layer, the third insulating layer having a density higher than that of the second insulating layer; and forming a porous fourth insulating layer for filling the trench. | 01-01-2009 |
20090004856 | METHOD OF FORMING CONTACT PLUG IN SEMICONDUCTOR DEVICE - A method of forming a contact plug in a semiconductor device comprising etching an interlayer insulating layer to form a patterned interlayer insulating layer having contact holes such that a distance between upper portions of the contact holes is minimized; forming a first insulating layer including a overhang portion for wrapping an upper portion of the patterned interlayer insulating layer; forming a liner-shaped second insulating layer on the patterned interlayer insulating layer including the first insulating layer, the second insulating layer being formed from material having a selectivity which differs from that of the first insulating layer; and at least partially removing the second insulating layer to increase a bottom critical dimension of the contact hole and removing the overhang portion of the first insulating layer. The invention can secure the bottom critical dimension of the contact hole as well as a distance between the upper portions of the contact holes when the contact plug is formed in a trench in a subsequent process so that the subsequent process margin can be secured. Also, the invention can inhibit an overhang or seam from being formed on the contact plug to enhance contact gap-fill capability and improve contact resistance. | 01-01-2009 |
20090029522 | Method of Forming Isolation Layer of Semiconductor Device - A method of forming isolation layers of a semiconductor device including forming a first insulating layer on a semiconductor substrate including trenches formed in the semiconductor substrate, substituting a top surface of the first insulating layer with salt, removing the salt to expand a space between sidewalls of the first insulating layer, and forming a second insulating layer on the first insulating layer so that the trenches are gap-filled. Thus, trenches can be easily gap-filled with an insulating material. | 01-29-2009 |
20090053889 | METHOD FOR FORMING A METAL LINE IN A SEMICONDUCTOR DEVICE - A semiconductor device includes contact plugs formed in contact holes defined in an interlayer dielectric. Upper portions of the contact plugs are etched. A first barrier layer is formed on a surface of the interlayer dielectric including the contact plugs. A second barrier layer is formed on the first barrier layer over the interlayer dielectric. The second barrier layer has lower compatibility with a metallic material than the first barrier layer. A first metal layer is formed over the first and second barrier layers. The first metal layer, the first barrier layer and the second barrier layer are then patterned. | 02-26-2009 |
20090065940 | METAL WIRING OF A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - According to a method of forming a metal wiring of a semiconductor device, a contact plug is formed at height lower than the contact hole, which is formed on an interlayer insulation layer, and then a metal wiring is formed over the contact plug and interlayer insulation layer to completely fill inside of the contact hole, decreasing process difficulty, ensuring reproducibility, and improving electrical property. | 03-12-2009 |
20090098727 | Method of Forming Metal Line of Semiconductor Device - Disclosed herein is a method of forming a metal line of a semiconductor device. According to the method, a contact hole is formed in a second insulating layer over a semiconductor substrate. A first barrier metal layer, including a TiN layer, is formed on a surface of the second insulating layer. The first barrier metal layer is formed such that the TiN layer is formed thinner at a bottom of the contact hole than on sidewalls and a top surface of the second insulating layer. A first metal layer is formed on the first barrier metal layer, including on the contact hole. Thermal treatment is carried to gap-fill the contact hole as the first metal layer is reflown and smooth. A second metal layer is formed on the first metal layer. The second metal layer to form an upper metal line. | 04-16-2009 |