Patent application number | Description | Published |
20090001449 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - The present invention provides a technology capable of reducing an area occupied by a nonvolatile memory while improving the reliability of the nonvolatile memory. In a semiconductor device, the structure of a code flash memory cell is differentiated from that of a data flash memory cell. More specifically, in the code flash memory cell, a memory gate electrode is formed only over the side surface on one side of a control gate electrode to improve a reading speed. In the data flash memory cell, on the other hand, a memory gate electrode is formed over the side surfaces on both sides of a control gate electrode. By using a multivalued memory cell instead of a binary memory cell, the resulting data flash memory cell can have improved reliability while preventing deterioration of retention properties and reduce its area. | 01-01-2009 |
20090095995 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode. | 04-16-2009 |
20090152644 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n | 06-18-2009 |
20090230092 | POWER SUPPLY CIRCUIT FOR WIRE ELECTRIC DISCHARGE MACHINING APPARATUS - A power supply circuit for a wire electric discharge machining apparatus includes an auxiliary power supply ( | 09-17-2009 |
20090256193 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode | 10-15-2009 |
20090314747 | WIRE ELECTRIC DISCHARGE MACHINE - A wire electric discharge machine includes a wire electrode; a machining power supply that supplies a machining current to between the wire electrode and a workpiece; a first power feed contact and a second power feed contact that respectively feed power to the wire electrode; a first machining-current loop that lets a first machining current to flow from the first power feed contact toward the workpiece; a second machining-current loop that lets a second machining current to flow from the second power feed contact toward the workpiece; an impedance switching circuit that is provided in at least any one of the first machining-current loop and the second machining-current loop; and a control unit that controls a flow ratio of the first machining current and the second machining current by changing an impedance of the impedance switching circuit. | 12-24-2009 |
20100066398 | TEMPERATURE CONTROL DEVICE AND TEMPERATURE CONTROL METHOD - Pressing an electronic device ( | 03-18-2010 |
20100133237 | Wire-Discharge Machining Apparatus - A wire-discharge machining apparatus controls a short circuit between a wire electrode and a workpiece and wire-breakage, and makes it easy to improve productivity, by performing power supply control to mix an upper-side power supply state in which a high-frequency pulse voltage is applied from an upper-side power supplying unit, a lower-side power supply state in which the high-frequency pulse voltage is applied from a lower-side power supplying unit, and a both-sides power supply state in which the high-frequency pulse voltage is applied to the wire electrode from both power supplying units in synchronization with each other during a period of electric discharge machining. | 06-03-2010 |
20100237404 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n | 09-23-2010 |
20100264479 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide film is formed over the upper surface of the control gate electrode, but not formed over the upper surface of the memory gate electrode. The memory gate electrode has, over the upper surface thereof, a sidewall insulating film made of silicon oxide. This sidewall insulating film is formed in the same step as that for the formation of respective sidewall insulating films over the sidewalls of the memory gate electrode and the control gate electrode. The present invention makes it possible to improve the production yield and performance of the semiconductor device having a nonvolatile memory. | 10-21-2010 |
20100307848 | BATTERY MOUNTING STRUCTURE FOR VEHICLE - In a battery mounting structure for a vehicle that includes a battery box mounted on an under-floor side of a vehicle body floor, the battery box includes: a battery pan on which a battery is placed; an outer peripheral frame formed to project from an outer peripheral edge portion of the battery pan; a cover placed on the battery pan from above; and sealing means provided in a joint portion between the battery pan and the cover, wherein the sealing means is disposed above the outer peripheral frame and positioned further inside than an outer periphery of the outer peripheral frame in plan view. | 12-09-2010 |
20110008943 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - The present invention provides a technology capable of reducing an area occupied by a nonvolatile memory while improving the reliability of the nonvolatile memory. In a semiconductor device, the structure of a code flash memory cell is differentiated from that of a data flash memory cell. More specifically, in the code flash memory cell, a memory gate electrode is formed only over the side surface on one side of a control gate electrode to improve a reading speed. In the data flash memory cell, on the other hand, a memory gate electrode is formed over the side surfaces on both sides of a control gate electrode. By using a multivalued memory cell instead of a binary memory cell, the resulting data flash memory cell can have improved reliability while preventing deterioration of retention properties and reduce its area. | 01-13-2011 |
20110106809 | INFORMATION PRESENTATION APPARATUS AND MOBILE TERMINAL - Information in which a user is interested when viewing a program and a situation and a behavior of the user are to be associated with each other. A keyword dictionary defining program information and a user behavior model are provided, and thereby the scene interesting the user is registered and stored, and information on the interesting scene is presented in a situation optimal to the user. | 05-05-2011 |
20110114604 | ELECTRIC DISCHARGE MACHINING APPARATUS, ELECTRIC DISCHARGE MACHINING METHOD, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD - An electric discharge machining apparatus includes: electrodes the total quantity of which is equal to N; an alternating-current power source; and capacitors the total quantity of which is equal to N. The alternating-current power source applies an alternating voltage commonly to the electrodes. One end of each of the capacitors is connected to a corresponding one of the electrodes, whereas the other ends of the capacitors are commonly connected to the alternating-current power source. | 05-19-2011 |
20110163071 | POWER SUPPLY DEVICE FOR ELECTRICAL DISCHARGE MACHINE - A switching element operates to be turned on or off at a frequency in the order of megahertz. A reactor supplies a resonance current generated by resonance of the reactor with a floating capacitance between electrodes to between the electrodes. The resonance current does not flow in a direct-current power supply. By turning a capacitor and a floating inductance into a serial resonant state, the reactor ideally supplies the resonance current to between the electrodes without influence of the floating inductance. A high-frequency voltage asymmetric in positive and negative polarities is applied to between the electrodes and a current pulse can be made into a short pulse. Therefore, finish machining with high surface roughness can be performed. | 07-07-2011 |
20120068307 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode. | 03-22-2012 |
20120109968 | INFORMATION PROCESSING APPARATUS, INFORMATION CREATING APPARATUS, INFORMATION PROCESSING METHOD, INFORMATION CREATING METHOD, INFORMATION PROCESSING POROGRAM, INFORMATION CREATINGN PROGRAM, AND RECORDING MEDIUM - An information processing apparatus includes a point database of position information and address information (text data of an address without a predetermined area name) for a point and with which a point search process is executed; a map database that includes text data of an area name for map display and with which a map display process is executed; and a control unit that, when a process is executed that uses text data of an address of a search point retrieved by the point search process, acquires from the point database, the position information and address information of the search point, acquires based on the position information of the search point and from the map database, the text data of the area name in the address of the search point, combines the acquired address information and acquired text data, generating the text data of the address of the search point. | 05-03-2012 |
20120251758 | HEAT INSULATION MATERIAL - A heat insulation material which is formed of a laminated body in which a plurality of plate-like bodies are stacked, can exhibit a heat insulation property, and is sufficiently eco-friendly. In each of the plate-like bodies, a plurality of rod-like foams, obtained by extrusion-foaming a foam material, are oriented in one direction to be fanned integrally with each other, and the plate-like bodies neighboring in the lamination direction are stacked so that an orientation direction of the foams of one plate-like body and an orientation direction of the foams of the other plate-like body are nearly perpendicular to each other. | 10-04-2012 |
20120306051 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTORING THE SAME - In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode. | 12-06-2012 |
20120313160 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide film is formed over the upper surface of the control gate electrode, but not formed over the upper surface of the memory gate electrode. The memory gate electrode has, over the upper surface thereof, a sidewall insulating film made of silicon oxide. This sidewall insulating film is formed in the same step as that for the formation of respective sidewall insulating films over the sidewalls of the memory gate electrode and the control gate electrode. The present invention makes it possible to improve the production yield and performance of the semiconductor device having a nonvolatile memory. | 12-13-2012 |
20130234289 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode. | 09-12-2013 |
20140091571 | Wind Turbine System - A wind turbine system includes a tower, a nacelle which is supported on the tower, a plurality of blades which are rotatably supported to the nacelle via a hub, and a generator which generates electricity by rotating the blades, wherein in case the tower shifts from vertical direction, the wind turbine system is controlled so that a force with an opposite direction to the tower shifting direction is added by wind. | 04-03-2014 |
20140097909 | HIGH-FREQUENCY POWER SOURCE GENERATION DEVICE - A high-frequency power source generation device includes switching element groups having a configuration in which a plurality of switching elements turned on/off cyclically are connected in parallel. One parallel connection terminal of the switching element group is connected to a positive electrode terminal of a DC power source, and one parallel connection terminal of the switching element group is connected to a negative electrode terminal of the DC power source. Respective other parallel connection terminals of the switching element groups are connected via a reactor. A pulse voltage that appears at opposite ends of the reactor due to a cyclic on/off operation of the switching element groups is applied to a load through a coaxial cable and a matching circuit. | 04-10-2014 |