Patent application number | Description | Published |
20090001346 | Non-Volatile Polymer Bistability Memory Device - The present invention relates to non-volatile memory device utilizing multi-layered self-assembled Ni1-xFex nanocrystalline arrays embedded in a polymer thin film without source and drain regions and the fabrication method thereof. It is possible to fabricate nano-crystallines more simply than hitherto method according to the present invention. More particularly, it is possible to control size and density of nano-crystallines without agglomeration of the crystallines since the crystallines, which have uniform distribution, are besieged to polymer layer. Furthermore, the present invention provides the non-volatile bistable memory device having chemical and electrical stability of higher efficiency and lower cost than conventional flash memory devices with a nano floating gate. Also, source and drain region is unnecessary in the device of the present invention, it can reduce the throughput time and cost. | 01-01-2009 |
20090108327 | Gate pattern having two control gates, flash memory including the gate pattern and methods of manufacturing and operating the same - Provided may be a gate pattern, flash memory and methods of manufacturing and operating the same. A gate pattern may include a floating gate on a tunneling dielectric layer, an inter-gate dielectric layer on the floating gate, a first control gate on the inter-gate dielectric layer, and a second control gate on the inter-gate dielectric layer and spaced apart from the first control gate. Each of the control gates sets four states according to an application time of a program voltage applied to the control gates. Thus, one control gate may program 2-bit data. | 04-30-2009 |
20090146140 | NONVOLATILE ORGANIC BISTABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes. | 06-11-2009 |
20090206385 | NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate. | 08-20-2009 |
20100105178 | Method of manufacturing a flash memeory device - Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer. | 04-29-2010 |
20110041980 | ELECTRONIC DEVICE UTILIZING GRAPHENE ELECTRODES AND OGRANIC/INORGANIC HYBRID COMPOSITES AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE - Example embodiments are directed to an electronic device and a method for manufacturing the same. The electronic device includes a polymer thin film and an electrode. The polymer thin film includes nanoparticles. The electrode is formed by attaching a graphene thin film of a sheet shape formed through graphene deposition using a vapor carbon supply source to the polymer thin film. In the method, a graphene thin film of a sheet shape is formed through graphene deposition using a vapor carbon supply source. A polymer solution with distributed nanoparticles is prepared. The polymer solution with distributed nanoparticles is spin-coated on a substrate. A polymer thin film comprising the nanoparticles is formed by drying the spin-coated polymer solution. An electrode is formed by attaching the graphene thin film onto the polymer thin film. | 02-24-2011 |
20110069555 | NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate. | 03-24-2011 |
20110101365 | ELECTRONIC DEVICE INCLUDING GRAPHENE THIN FILM AND METHODS OF FABRICATING THE SAME - Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure. | 05-05-2011 |
20120097232 | SOLAR CELL USING P-I-N NANOWIRE - A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material. | 04-26-2012 |
20120098741 | ELECTROPHORETIC DISPLAY WITH INTEGRATED TOUCH SCREEN - An electrophoretic display includes a substrate on which image gate lines and image signal lines are formed to intersect one another. An image switching thin-film transistor (TFT) is formed on the substrate and electrically connected to the image gate lines and the image signal lines. A sensing TFT is formed on the substrate and configured to sense infrared (IR) light and generate an IR sensing signal. An output switching TFT is formed on the substrate and connected to the sensing TFT. The output switching TFT outputs position information from the IR sensing signal. An IR filter insulating layer is formed on the substrate to cover the sensing TFT and configured to transmit only the IR light. A pixel electrode is formed on the IR filter insulating layer and electrically connected to the image switching TFT. An electrophoretic film is formed on the pixel electrode and includes a plurality of micro-capsules having pigment particles with positive and negative electrical charges. A common electrode is formed on the electrophoretic film. | 04-26-2012 |
20120161106 | PHOTODETECTOR USING A GRAPHENE THIN FILM AND NANOPARTICLES, AND METHOD FOR PRODUCING THE SAME - Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption. | 06-28-2012 |
20130234973 | TOUCH SCREEN PANEL AND IMAGE DISPLAY DEVICE INCLUDING SAME - The present invention relates to a touch screen panel and to an image display device including same. The touch screen panel comprises: a first sensing wire pattern layer in which a plurality of first sensing wire pattern lines are formed in a first diagonal direction; a second sensing wire pattern layer in which a plurality of second sensing wire pattern lines are formed in a second diagonal direction so as to form a preset angle with the first sensing wires; and an insulation layer for providing insulation between the 1st sensing wire pattern layer and the 2nd sensing wire pattern layer. Since capacitive touch sensing wire pattern lines are disposed diagonally with a certain angle therebetween, the number of wires arranged on the major axis of the bezel of the touch screen panel can be reduced when compared to the resolution of touch screen panels of prior art in which the arrangement is perpendicular. | 09-12-2013 |
20130256782 | FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING - Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding. | 10-03-2013 |
20130278535 | METHOD FOR DETECTING TOUCH POSITION OF TOUCH SCREEN AND TOUCH SCREEN USING SAME - Disclosed are a method for detecting a touch position of a touch screen and the touch screen using the same. A method for detecting a touch position on a touch screen includes the steps of: detecting a touched touch screen block among touch screen blocks by using signals generated from at least one touch sensor among touch sensors included in a plurality of touch screen blocks into which an area of the touch screen is divided; and detecting a touch position in the detected touch screen block on the basis of a signal of a touch sensor included in the detected touch screen block. Thus, compared to an existing method of processing a signal by reading measurement values of all measurement sensors, the invention enables fast signal processing, thereby reducing measurement signal processing time for measuring a touch position of a touch screen. | 10-24-2013 |
20130327385 | SOLAR CELL HAVING A DOUBLE-SIDED STRUCTURE, AND METHOD FOR MANUFACTURING SAME - The present invention relates to a solar cell having nanostructures on both surfaces of a transparent substrate, and to a method for manufacturing same. The nano-structures, which face each other with respect to the substrate and which transport electrons, are formed using zinc-oxide nanowires. Also, a hole-transport layer using CIS nanoparticles is formed in order to absorb light having a short wavelength and to transport generated holes. A hole-transport layer including CIGS nanoparticles for absorbing light having a relatively long wavelength is formed on the side facing the hole-transport layer including the CIS nanoparticles. | 12-12-2013 |
20140231766 | ORGANIC LIGHT EMITTING DEVICE - Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light. | 08-21-2014 |
20140306722 | CIRCUIT FOR MEASURING ELECTROSTATIC CAPACITY USING A CURRENT SOURCE TECHNIQUE AND CIRCUIT FOR MEASURING ELECTROSTATIC CAPACITY USING SAME - According to the present invention, a circuit for measuring electrostatic capacity using a current source technique, which includes an external capacitor and at least one pad capacitor, comprises: a charging/discharging unit charging and discharging the at least one pad capacitor using a constant current source; and a charge sharing switching unit performing a control to share a charge between the charged or discharged pad capacitor and the external capacitor. By charging/discharging the pad capacitor using a current source and sharing the charge between the pad capacitor and the external capacitor, the advantages of a technique for using a voltage source and a conventional technique for using a current source may be combined, and their drawbacks may each be remedied. | 10-16-2014 |
20150054342 | APPARATUS FOR RECEIVING NON-CONTACT ENERGY AND CONTROLLING METHOD THEREFOR - The present invention provides an apparatus for receiving non-contact energy that includes; a receiving unit that is spaced from a transmitting unit and receives thermal or light energy from the transmitting unit; an energy converting unit that converts the thermal or light energy received from the receiving unit into electric energy and supplies electric energy to a target device; and an auxiliary power that receives electric energy from the receiving unit or the energy converting unit and supplies electric energy to the target device when the energy transmitted from the receiving unit or the energy converting unit to the target device is cut off, and a method of controlling the device. According to the present invention, it is possible to stably supply energy that is not harmful to the human body and, has a wide transmission region. | 02-26-2015 |