Patent application number | Description | Published |
20090000700 | TREATMENT METHOD FOR OPTICALLY TRANSMISSIVE BODY - A method of treating a transmissive body of zinc sulfide or zinc selenide includes placing a non-platinum metal layer, such as a layer of cobalt, silver, or iron on a surface of the transmissive body, and improving the optical properties of the transmissive body by subjecting the body and the layer to an elevated temperature and elevated pressure. The zinc sulfide or zinc selenide may be chemical vapor deposited material. The non-platinum metal of the layer may be such that a Gibbs free energy of formation of a most stable sulfide (or selenide) of the non-platinum metal is more negative than a Gibbs free energy of formation of a most stable zinc sulfide (or zinc selenide) configuration that is thermodynamically capable of reacting with the non-platinum metal. With this condition the non-platinum metal preferentially chemically bonds with free sulfur (or free selenium) in preference to zinc sulfide (or zinc selenium). | 01-01-2009 |
20090155162 | TREATMENT METHOD FOR OPTICALLY TRANSMISSIVE BODIES - A method of treating zinc sulfide transmissive bodies includes using the same metal layer to treat multiple transmissive bodies, catalyzing the recrystallization of the bodies to remove defects from the bodies and forming multispectral zinc sulfide. The metal layer is brought into contact with one of the transmissive bodies. The transmissive body and the metal layer are then subjected to elevated temperature and pressure. The metal layer may include any of a variety of suitable metals, such as platinum, cobalt, silver, nickel, and/or copper. The metal layer may be a foil that is wrapped around the transmissive body. Alternatively the metal layer may be a rigid metal piece, for example being machined to fit the shape of the transmissive bodies. The reuse of the metal layer to treat multiple transmissive bodies reduces the cost of treating the transmissive bodies. | 06-18-2009 |
20100035036 | Durable antireflective multispectral infrared coatings - Durable antireflective multispectral infrared coatings comprising at least one layer of a metal oxyfluoride are provided. | 02-11-2010 |
20100090228 | BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE - A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B | 04-15-2010 |
20100155900 | FABRICATING A GALLIUM NITRIDE DEVICE WITH A DIAMOND LAYER - In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. | 06-24-2010 |
20100155901 | FABRICATING A GALLIUM NITRIDE LAYER WITH DIAMOND LAYERS - In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer. | 06-24-2010 |
20100187544 | FABRICATING A GALLIUM NITRIDE LAYER WITH DIAMOND LAYERS - In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer. | 07-29-2010 |
20110241018 | FABRICATING A GALLIUM NITRIDE DEVICE WITH A DIAMOND LAYER - In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. | 10-06-2011 |
20120153294 | Semiconductor Structures Having Directly Bonded Diamond Heat Sinks and Methods for Making Such Structures - A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO | 06-21-2012 |
20120225536 | SEMICONDUCTOR STRUCTURES HAVING DIRECTLY BONDED DIAMOND HEAT SINKS AND METHODS FOR MAKING SUCH STRUCTURES - A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO | 09-06-2012 |
20130264907 | BETAVOLTAIC BATTERY WITH DIAMOND MODERATOR AND RELATED SYSTEM AND METHOD - An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies. | 10-10-2013 |