Patent application number | Description | Published |
20110249491 | METHOD AND APPARATUS FOR PROGRAMMING A MAGNETIC TUNNEL JUNCTION (MTJ) - A method of writing to magnetic tunnel junctions (MTJs) of a magnetic memory array includes storing in-coming data in a cache register, reading the present logic state of a first one of a set of at least two MTJs, the set of at least two MTJs including the first MTJ and a second MTJ. The in-coming data is to be written into the second MTJ. Further steps are storing the read logic state into a data register, swapping the contents of the data register and the cache register so that the cache register stores the read logic state and the data register stores the in-coming data, applying a first predetermined voltage level to the set of MTJs thereby causing the first MTJ to be over-written, applying a second predetermined voltage level to the set of MTJs, and storing the in-coming data into the second MTJ. | 10-13-2011 |
20120068236 | NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY - A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current. | 03-22-2012 |
20120069643 | NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY - A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current. | 03-22-2012 |
20120069649 | NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY - A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current. | 03-22-2012 |
20120182795 | EMULATION OF STATIC RANDOM ACCESS MEMORY (SRAM) BY MAGNETIC RANDOM ACCESS MEMORY (MRAM) - A magnetic memory system includes a magnetic random access memory (MRAM) including a plurality of magnetic memory banks and operative to store data during a write operation initiated by a write command. The magnetic memory system further includes a first-in-first-out (FIFO) interface device coupled to the MRAM and including a plurality of FIFOs Each of the magnetic memory banks is coupled to a respective one of the plurality of FIFOs, the FIFO being operative to queue write commands on a per magnetic memory bank basis and further operative to issue the queued write commands at a time when the MRAM is not in use, wherein concurrent write operations are performed to at least two of the plurality of magnetic memory banks. | 07-19-2012 |
20120230101 | METHOD AND APPARATUS FOR WRITING TO A MAGNETIC TUNNEL JUNCTION (MTJ) BY APPLYING INCREMENTALLY INCREASING VOLTAGE LEVEL - A method of writing to magnetic tunnel junctions (MTJs) of a magnetic memory array includes storing in-coming data in a cache register, reading the present logic state of a first one of a set of at least two MTJs, the set of at least two MTJs including the first MTJ and a second MTJ. The in-coming data is to be written into the second MTJ. Further steps are storing the read logic state into a data register, swapping the contents of the data register and the cache register so that the cache register stores the read logic state and the data register stores the in-coming data, applying a first predetermined voltage level to the set of MTJs thereby causing the first MTJ to be over-written, applying a second predetermined voltage level to the set of MTJs, and storing the in-coming data into the second MTJ. | 09-13-2012 |
20140032823 | MEMORY BLOCK IDENTIFIED BY GROUP OF LOGICAL BLOCK ADDRESSES, STORAGE DEVICE WITH MOVABLE SECTORS, AND METHODS - In an embodiment, only one sector of a plurality of sectors in a physical block of a plurality of physical blocks has a sector status location configured to store information that indicates a move status of an other sector of the plurality sectors of the physical block of the plurality of physical blocks, where the only one sector of the plurality of sectors in the physical block of the plurality of physical blocks is configured to store a sector of data in addition to the information that indicates the move status. | 01-30-2014 |
20140033328 | SECURE COMPACT FLASH - Methods and apparatus are provided, such as a memory card with a processor and nonvolatile memory coupled thereto. The nonvolatile memory has a secure area configured to store a user password and a serial number in encrypted form. The card is configured to grant access to the secure area when the card receives a password that matches the stored user password and the card is coupled to a system having the serial number. | 01-30-2014 |
20140082271 | FLASH MEMORY ARCHITECTURE WITH SEPARATE STORAGE OF OVERHEAD AND USER DATA - A memory device has a plurality of dedicated data blocks for storing user data and a plurality of dedicated overhead blocks for storing overhead data. A dedicated overhead block of the plurality of dedicated overhead blocks has a plurality of overhead segments. The overhead segments have physical block address registers configured to store physical block addresses defining respective dedicated data blocks. | 03-20-2014 |
20140269041 | EMULATION OF STATIC RANDOM ACCESS MEMORY (SRAM) BY MAGNETIC RANDOM ACCESS MEMORY (MRAM) - A magnetic memory system includes a magnetic random access memory (MRAM) including a plurality of magnetic memory banks and operative to store data during a write operation initiated by a write command. The magnetic memory system further includes a first-in-first-out (FIFO) interface device coupled to the MRAM and including a plurality of FIFOs Each of the magnetic memory banks is coupled to a respective one of the plurality of FIFOs, the FIFO being operative to queue write commands on a per magnetic memory bank basis and further operative to issue the queued write commands at a time when the MRAM is not in use, wherein concurrent write operations are performed to at least two of the plurality of magnetic memory banks. | 09-18-2014 |
20150331811 | SECURE COMPACT FLASH - Methods and apparatus are provided, such as a memory card with a processor and nonvolatile memory coupled thereto. The nonvolatile memory has a secure area configured to store a user password and a serial number in encrypted form. The card is configured to grant access to the secure area when the card receives a password that matches the stored user password and the card is coupled to a system having the serial number. | 11-19-2015 |
Patent application number | Description | Published |
20110258181 | METHOD FOR CALCULATING SEMANTIC SIMILARITIES BETWEEN MESSAGES AND CONVERSATIONS BASED ON ENHANCED ENTITY EXTRACTION - One embodiment of the present invention provides a system for estimating a similarity level between documents. During operation, the system receives a number of documents, extracts a number of semantic entities from the documents, calculates the similarity level between the documents based on the extracted semantic entities, and produces a result indicating similar documents based on the calculated similarity level. | 10-20-2011 |
20110258193 | METHOD FOR CALCULATING ENTITY SIMILARITIES - One embodiment of the present invention provides a system for estimating a similarity level between semantic entities. During operation, the system selects two or more semantic entities associated with a number documents. The system subsequently parses the documents into sub-parts, and calculates the similarity level between the semantic entities based on occurrences of the semantic entities within the sub-parts of the documents. | 10-20-2011 |
20120254165 | METHOD AND SYSTEM FOR COMPARING DOCUMENTS BASED ON DIFFERENT DOCUMENT-SIMILARITY CALCULATION METHODS USING ADAPTIVE WEIGHTING - One embodiment provides a system for comparing documents based on different document-similarity calculation methods using adaptive weighting. During operation, the system receives at least two document-similarity values associated with two documents, wherein the document-similarity values are calculated by different document-similarity calculation methods. The system then determines the weight of a respective document-similarity calculation method for each of the two documents, as well as a weight-combination function for calculating a combined weight of the respective document-similarity calculation method associated with the two documents. Next, the system generates a combined similarity value based on the document-similarity values and the weight-combination function. | 10-04-2012 |
20120265767 | METHOD FOR SEARCHING RELATED DOCUMENTS BASED ON AND GUIDED BY MEANINGFUL ENTITIES - One embodiment provides a system for searching related documents. During operation, the system receives a source document. The system then searches related documents based on semantic entities extracted from the source document. Next, the system receives user-adjusted search criteria and updates search results of related documents based on the user-adjusted search criteria. | 10-18-2012 |
20130006611 | METHOD AND SYSTEM FOR EXTRACTING SHADOW ENTITIES FROM EMAILS - One embodiment provides a system for extracting shadow entities from emails. During operation, the system receives a number of document corpora. The system then calculates word-collocation statistics associated with different n-gram sizes for the document corpora. Next, the system receives an email and identifies shadow entities in the email based on the calculated word-collocation statistics for the document corpora. | 01-03-2013 |
Patent application number | Description | Published |
20130221993 | FREQUENCY HOPPING ALGORITHM FOR CAPACITANCE SENSING DEVICES - Apparatuses and methods of frequency hopping algorithms are described. One method listens to a noise level on multiple electrodes of a sense network at multiple operating frequencies. The method then selects one of the frequencies with a lowest noise level for scanning the electrodes to detect a conductive object proximate to the electrodes. | 08-29-2013 |
20130234978 | FALSE TOUCH FILTERING FOR CAPACITANCE SENSING SYSTEMS - Apparatuses and methods of false touch filtering are described. One device includes a controller and a capacitance sensing array including multiple sense elements (e.g., intersections of TX and RX electrodes). The controller includes a capacitance sensing circuit coupled to the capacitance sensing array, and a filter circuit coupled to the output of the capacitance sensing circuit. The controller is configured to receive, from the capacitance sensing circuit, data representing capacitances of the sense elements, process the data to identify activated sense elements, and filter the data to remove false touch events based on a spatial relationship of activated sense elements. | 09-12-2013 |
20140192027 | Tail Effect Correction for SLIM Pattern Touch Panels - Techniques for correcting tail effect are described herein. In an example embodiment, a device comprises a sensor coupled with a processing logic. The sensor is configured to measure a plurality of measurements from a sensor array, where the measurements are representative of a conductive object that is in contact with or proximate to the sensor array. The sensor array comprises RX electrodes and TX electrodes that are interleaved without intersecting each other in a single layer on a substrate of the sensor array. The processing logic is configured to determine a set of adjustment values that correspond to a tail effect associated with the measurements, and to generate adjusted measurements based on the set of adjustment values, where the adjusted measurements correct a parasitic signal change of the tail effect. | 07-10-2014 |
Patent application number | Description | Published |
20130264747 | SELF-ASSEMBLY PATTERNING OF ORGANIC MOLECULES ON A SURFACE - The embodiments disclosed herein include all-electron control over a chemical attachment and the subsequent self-assembly of an organic molecule into a well-ordered three-dimensional monolayer on a metal surface. The ordering or assembly of the organic molecule may be through electron excitation. Hot-electron and hot-hole excitation enables tethering of the organic molecule to a metal substrate, such as an alkyne group to a gold surface. All-electron reactions may allow a direct control over the size and shape of the self-assembly, defect structures and the reverse process of molecular disassembly from single molecular level to mesoscopic scale. | 10-10-2013 |
20140003466 | SINGLE-CONTACT TUNNELING THERMOMETRY | 01-02-2014 |
20140041085 | REAL SPACE MAPPING OF OXYGEN VACANCY DIFFUSION AND ELECTROCHEMICAL TRANSFORMATIONS BY HYSTERETIC CURRENT REVERSAL CURVE MEASUREMENTS - An excitation voltage biases an ionic conducting material sample over a nanoscale grid. The bias sweeps a modulated voltage with increasing maximal amplitudes. A current response is measured at grid locations. Current response reversal curves are mapped over maximal amplitudes of the bias cycles. Reversal curves are averaged over the grid for each bias cycle and mapped over maximal bias amplitudes for each bias cycle. Average reversal curve areas are mapped over maximal amplitudes of the bias cycles. Thresholds are determined for onset and ending of electrochemical activity. A predetermined number of bias sweeps may vary in frequency where each sweep has a constant number of cycles and reversal response curves may indicate ionic diffusion kinetics. | 02-06-2014 |
20140064322 | ELECTRONIC THERMOMETRY IN TUNABLE TUNNEL JUNCTION - A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width. | 03-06-2014 |