Patent application number | Description | Published |
20080268651 | Catch-cup to diverter alignment leveling jig - An apparatus for leveling and centering a catch-cup chamber to a diverter chamber of a semiconductor processing chamber is described. In one embodiment, the apparatus has a frame with branches. A coupler is mounted to the end of each branch. A measuring device is mounted to each branch. The apparatus is placed in the diverter. The measuring device measures a distance from a branch to a top surface of the catch-cup chamber. | 10-30-2008 |
20090014323 | HIGH TEMPERATURE CATHODE FOR PLASMA ETCHING - The present invention generally is a cathode suitable for use in high temperature plasma etch applications. In one embodiment, the cathode includes a ceramic electrostatic chuck secured to a base. The base has cooling conduits formed therein. A rigid support ring is disposed between the chuck and the base, thereby maintaining the chuck and the base in a spaced-apart relation. | 01-15-2009 |
20130025688 | No-Contact Wet Processing Tool with Fluid Barrier - Embodiments of the present invention describe substrate processing tools and methods. The substrate processing tool includes a housing defining a chamber and a substrate support coupled to the housing and configured to support a substrate within the chamber. The substrate has an upper surface with a first portion and a second portion surrounding the first portion. An isolation unit including a body is coupled to the housing and positioned within the chamber above and spaced apart from the first portion of the upper surface of the substrate. The body includes at least one outlet on a lower surface thereof, which is in fluid communication with at least one fluid pump. The at least one fluid pump is configured to drive fluid through the at least one of outlet to form a barrier around the first portion of the upper surface of the substrate. | 01-31-2013 |
20130025690 | No-Contact Wet Processing Tool with Liquid Barrier - Embodiments of the present invention describe substrate processing tools and methods. A substrate on a support has a first portion and a second portion surrounding the first portion. An isolation unit including a body is positioned above the first portion of the substrate. The body includes at least one outlet on a lower surface thereof. At least one liquid pump is in fluid communication with the array of outlets. The at least one outlet is configured to drive liquid through the at least one outlet onto the substrate to form a liquid barrier around the first portion of the substrate. | 01-31-2013 |
20130133704 | SYSTEM AND METHOD FOR REDUCING PARTICLES AND MARKS ON WAFER SURFACE FOLLOWING REACTOR PROCESSING - In one embodiment, a cleaning chamber is provided. The cleaning chamber has a base portion housing a first chuck, a top portion housing a plurality of cups, and a middle portion functioning as a lid for the base portion and a second chuck for the top portion. A rail couples the top portion and the middle portion, wherein the top portion is rigidly mounted to the rail, while the middle portion is slidably mounted to the rail. A support frame is rigidly mounted to the base portion, the support frame being pivotably affixed to the rail, wherein the rail maintains a vertical alignment between the top portion and the middle portion as the rail pivots. | 05-30-2013 |
20130164937 | CHEMICAL MECHANICAL PLANARIZATION SITE ISOLATION REACTOR - The embodiments describe systems and methods for combinatorial processing of a substrate. In some embodiments, chemical mechanical polishing (CMP) techniques are combinatorially processed and evaluated. The CMP system is capable of providing a localized planarization surface to at least a region of a substrate being combinatorially processed. In some embodiments, the CMP system comprises a reactor assembly having plurality of reaction chambers, with at least a reaction chamber comprising a rotatable polishing head, slurry and chemical distribution, chemical and water rinse, and slurry and fluid removal. Accordingly, from a single substrate, a variety of materials, process conditions, and process sequences may be evaluated for desired planarization results. | 06-27-2013 |