Patent application number | Description | Published |
20090209105 | PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A pattern forming method for forming a pattern serving as a mask, includes a process for forming a first pattern | 08-20-2009 |
20090209109 | PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - Provided is a pattern forming method for forming a pattern serving as a mask, which includes: a process for forming a first pattern 105 made of a photoresist; a process for forming a boundary layer 106 at sidewall portions and top portions of the first pattern 105; a process for forming a second mask material layer 107 to cover a surface of the boundary layer 106; a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106; a process for forming a second pattern made of the second mask material layer 107 by etching and removing the boundary layer 106; and a trimming process for reducing a width of the first pattern 105 and a width of the second pattern to predetermined widths. | 08-20-2009 |
20110220609 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support | 09-15-2011 |
20120028471 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: forming a thin film on a substrate; forming a resist mask which forms a photoresist mask having an elliptical hole pattern on the thin film; shrinking a hole size of the second pattern by forming an insulating film on a side wall of the second pattern of the photoresist layer; and etching the thin film using the insulating film and the photoresist layer which form the second pattern having the shrinked hole size as a mask. | 02-02-2012 |
20120305183 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a trimming unit for reducing a width of the first pattern to a predetermined width; a boundary layer forming unit for forming a boundary layer, on a surface of the first pattern; a second mask material layer forming unit for forming a second mask material layer on a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer. | 12-06-2012 |
20120312472 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a boundary layer forming unit for forming a boundary layer at sidewall portions and top portions of the first pattern; a second mask material layer forming unit for forming a second mask material layer so as to cover a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; a boundary layer etching unit for forming a second pattern by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths. | 12-13-2012 |
Patent application number | Description | Published |
20110027727 | Substrate developing method, substrate processing method and developing solution supply nozzle - According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution. | 02-03-2011 |
20120202301 | METHOD OF FORMING MASK PATTERN - A disclosed method of forming a mask pattern includes forming a first resist film on a film to be etched, opening portions on the first resist film at a predetermined pitch, a first film on the first resist film so as to cover sidewalls of the first opening portions, a second resist film, second opening portions alternately arranged with the first opening portions on the second resist film, and a second film on the second resist film so as to cover sidewalls of the second opening portions, and removing a part of the second film so that the second film is left as first sidewall portions, a part of the first resist film using the first sidewall portions as a mask to form third opening portions, and a part of the first film while leaving the first film as second sidewall portions to form fourth opening portions. | 08-09-2012 |
20120211873 | METHOD FOR FORMING A PATTERN AND SEMICONDUCTOR DEVICE - A method for forming a pattern includes: forming a resist film on an object and patterning the formed resist film; forming a spacer film to coat the object and the resist film, and forming a concave portion surrounded by the spacer film; forming a first opening from the concave portion by etching a portion of the spacer film so that the spacer film remains beside a side wall of the resist film while exposing the object under the concave portion and the top surface of the resist film; and forming a second opening by removing the resist film. | 08-23-2012 |
20120220132 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: forming a core layer, an anti-reflection film and a photoresist layer on a layer to be etched of a substrate; trimming first line patterns of the photoresist layer; forming a first film on the first line patterns; removing the first film such that the first film is left in sidewall portions of the first line patterns of the photoresist layer; removing the photoresist layer; producing the core layer into second line patterns by etching the anti-reflection film and the core layer; forming a second film on the core layer produced into the second line patterns; removing the second film such that the second film is left in sidewall portions of the second line patterns of the core layer; and producing the layer to be etched into third line patterns by etching the layer to be etched. | 08-30-2012 |
20130209941 | METHOD OF FORMING PATTERN - A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO | 08-15-2013 |
20140083972 | PATTERN FORMING METHOD - Provided is a pattern forming method which includes forming fine lines and spaces in a thin film on a substrate; forming a first pattern which is a reverse pattern of a trench pattern for forming wiring by cutting the lines; and forming a second pattern which will become the trench pattern by reversing the first pattern. | 03-27-2014 |
20140094034 | PATTERN FORMING METHOD - A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern. | 04-03-2014 |
20140235065 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - Disclosed is a semiconductor device manufacturing method that manufactures a semiconductor device having a resist pattern which is excellent in roughness property and line width property. The method includes forming a film which is elastic and incompatible with a resist patterned on an object to be processed to cover the surface of the resist, and heating the object to be processed formed with the film. | 08-21-2014 |
20150111387 | USE OF TOPOGRAPHY TO DIRECT ASSEMBLY OF BLOCK COPOLYMERS IN GRAPHO-EPITAXIAL APPLICATIONS - A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography. | 04-23-2015 |
20150227047 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing. | 08-13-2015 |
20150235850 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film. | 08-20-2015 |
20150241787 | SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM - Provided is a substrate processing method in which a photolithography processing is performed on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern. | 08-27-2015 |
20160049292 | Semiconductor Device Manufacturing Method - There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated. | 02-18-2016 |
Patent application number | Description | Published |
20130285270 | TRANSFER APPARATUS AND METHOD OF MANUFACTURING ARTICLE - A transfer apparatus transfers a pattern of an original to a resin on a shot region of a substrate. The original includes a first surface and second surface which are surfaces opposite to each other. The first surface includes a pattern region where the pattern is formed, and the second surface includes a holding surface. The apparatus includes a plurality of holding units configured to hold the holding surface of the original, a plurality of driving units configured to drive the plurality of holding units, respectively, and a control unit configured to control driving of the plurality of holding units by the plurality of driving units to align the pattern region with the shot region of the substrate. | 10-31-2013 |
20150146207 | DETECTION APPARATUS, IMPRINT APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - The present invention provides a detection apparatus for detecting a plurality of marks, comprising a plurality of detection units each including a mirror and a scope configured to detect light from the marks via the mirror, wherein the plurality of detection units include a first detection unit, a second detection unit, and a third detection unit, and in a surface direction parallel to a surface on which the plurality of marks are arranged, a direction of an optical axis between the mirror and the scope in the third detection unit is different from at least one of a direction of an optical axis between the mirror and the scope in the first detection unit and a direction of an optical axis between the mirror and the scope in the second detection unit. | 05-28-2015 |
Patent application number | Description | Published |
20100221130 | BLOOD PUMP APPARATUS - A blood pump apparatus comprises a housing, a centrifugal pump section including an impeller and rotating inside the housing to feed a fluid by a centrifugal force, an impeller rotational torque generation section for attracting thereto said impeller and rotating said impeller; and a plurality of grooves for hydrodynamic bearing provided on an inner surface of said housing at a side of said impeller rotational torque generation section, each of the grooves for hydrodynamic bearing having a first side and a second side both extending from a periphery of said portion in which a groove for hydrodynamic bearing is formed toward a central side thereof and opposed to each other, a third side connecting one end of said first side and one end of said second side to each other, and a fourth side connecting said other end of said first side and said other end of said second side to each other; said first side and said second side are formed as a circular arc respectively in such a way that centers of said circular arcs are different from each other. | 09-02-2010 |
20120310143 | IONTOPHORESIS PATCH - An iontophoresis patch is equipped with a donor gel and a reference gel which are disposed to contact an external conductor, for example, the skin of a patient and thereby output current from a current-carrying device to the external conductor. The iontophoresis patch includes: a donor portion having the donor gel containing a medical agent to be penetrated into the external conductor; a reference portion having a reference gel, mounted with the current-carrying device on the surface on the side opposite to the reference gel, and disposed on the external conductor apart from the donor portion; and an electrode film for supplying current from the current-carrying device to the donor gel and the reference gel. | 12-06-2012 |
20130281914 | TRANSDERMAL DRUG ADMINISTRATION DEVICE - A transdermal drug administration device which comprises a patch that is provided with: a donor gel in which a medical agent is sealed; a reference gel; a first electrode that is connected to the donor gel; and a second electrode that is connected to the reference gel. When the patch is applied to the skin, a direct current is applied between the first electrode and the second electrode at a predetermined cycle and an alternating current is applied between the first electrode and the second electrode during the periods when a direct current is not applied, thereby obtaining the capacitance. The application state of the patch is determined based on the thus-obtained capacitance. | 10-24-2013 |
20150246215 | IONTOPHORESIS PATCH - An iontophoresis patch which outputs an electric current from an energizing device to an external conductor comprises: a donor portion that has a first contact member; a reference portion that has a second contact member and is located on the external conductor away from the donor portion; and an electrode body that has a first electrode and a second electrode and that extends across the donor portion and the reference portion. The electrode body has a single-sided wiring structure in which the first electrode and the second electrode are formed by a conductive ink being printed on one side of a film, the printing pattern of the first electrode has a gap area in which the conductive ink is not printed, and the film and the first contact member are transparent. | 09-03-2015 |
Patent application number | Description | Published |
20110204381 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 08-25-2011 |
20120273797 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 11-01-2012 |
20130168739 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n | 07-04-2013 |
20130181255 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer | 07-18-2013 |
20130313564 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 11-28-2013 |
Patent application number | Description | Published |
20150214551 | CURRENT COLLECTOR FOIL, ELECTRODE STRUCTURE, LITHIUM SECONDARY BATTERY, OR ELECTRICAL DOUBLE LAYER CAPACITOR - The present invention provides a current collector foil; and an electrode structure, lithium secondary battery or an electrical double layer capacitor using the current collector foil, which can achieve superior high rate characteristics. Provided is a current collector foil for forming thereon an active material layer containing active material particles, wherein: the current collector foil is provided with a roughened portion; a cross sectional curve of the roughened portion has a box counting dimension of 1.1 or higher; and an average length of waviness motif AW of the cross-sectional curve of the roughened portion is longer than twice of D | 07-30-2015 |
20150221449 | CURRENT COLLECTOR, ELECTRODE STRUCTURE, AND ELECTRICAL STORAGE DEVICE - Provided is a current collector which can secure safety by certainly exhibiting the PTC function when used for an electrode structure of an electrical storage device such as non-aqueous electrolyte batteries, electrical double layer capacitors, lithium ion capacitors, and the like. Here, the current collector shall also be capable of being used for high-speed charge/discharge, having long life, being high in safety, and having excellent productivity. According to the present invention, a current collector | 08-06-2015 |
20150221452 | CURRENT COLLECTOR, ELECTRODE, SECONDARY CELL, AND CAPACITOR - Provided are a current collector which has an excellent high-rate property and exerts a sufficient safety function when employed in a secondary battery or a capacitor, as well as an electrode, a secondary battery or a capacitor in which said current collector is employed. According to the invention, a current collector is provided which comprises: metal foil; and a conductive layer with a film thickness of 0.1 μm to 10 μm formed on a surface of said metal foil. Here, said conductive layer includes a conductive material and a binder material. A melting point of said binder material is 80° C. to 150° C. Further, said binder material shows, in differential scanning calorimetry (DSC) in a range from room temperature to 200° C., one or more endothermic peaks in the heating-up process. In a case where said binder material shows two or more endothermic peaks, each difference between said peaks is 15° C. or more. Moreover, said binder material shows one or more exothermic peaks in the cooling-down process. In a case where said binder material shows only one exothermic peak, said exothermic peak falls within a range of 50 to 120° C., and a width at half maximum of said exothermic peak is 10° C. or less. On the other hand, in a case where said binder material shows two or more exothermic peaks, a maximum exothermic peak among said exothermic peaks falls within a range of 50 to 120° C., and a width at half maximum of said exothermic peak is 10° C. or less. | 08-06-2015 |
20150280241 | COLLECTOR, ELECTRODE STRUCTURE, NONAQUEOUS ELECTROLYTE BATTERY, CONDUCTIVE FILLER, AND ELECTRICAL STORAGE DEVICE - The present invention provides a current collector having a conductive layer which is excellent in adhesion strength and can exhibit a PTC function for stably contributing to safety, when used for an electrode structure for non-aqueous electrolyte batteries or for electrical storage devices. A current collector, including a metal foil and a conductive layer formed on at least one side of the metal foil, the conductive layer being formed partially or entirely on the surface of the metal foil; is provided. Here, the conductive layer contains core shell particles including core particles | 10-01-2015 |
20150294802 | CURRENT COLLECTOR, ELECTRODE STRUCTURE AND NON-AQUEOUS ELECTROLYTE BATTERY OR ELECTRICAL STORAGE DEVICE - Provided is a current collector which has a PTC layer having room for thermal expansion at elevated temperature while securing sufficient conductivity at normal temperature. According to the invention, a current collector comprising a conductive base material, and a resin layer formed on at least one surface of the conductive base material is provided. The resin layer contains an organic resin and conductive particles. A deposition amount of the resin layer on the conductive base material is 0.5 to 20 g/m | 10-15-2015 |
20150311001 | CURRENT COLLECTOR, ELECTRODE STRUCTURE, AND ELECTRICAL STORAGE DEVICE - A current collector which can achieve both of the improvement in battery characteristics by reducing the initial (at ambient temperature) interface resistance and the improvement in safety by the PTC function, when the current collector is used for the electrode structure of electrical storage devices such as non-aqueous electrolyte batteries, electrical double layer capacitors, and lithium ion capacitors; electrode structures; electrical storage devices; and composition for current collectors; are provided. A current collector, including: a conductive substrate | 10-29-2015 |
20160042878 | CURRENT COLLECTOR, ELECTRODE STRUCTURE, BATTERY AND CAPACITOR - A current collector with high safety which can realize both of a superior conductivity at normal temperature conditions and a superior shut down function at high temperature conditions, is provided. | 02-11-2016 |
Patent application number | Description | Published |
20080274568 | Reticle and method of fabricating semiconductor device - Dicing lines extending longitudinally and transversely, and chip areas surrounded by the dicing lines are formed in a resist mask. Critical-dimension patterns are formed in the dicing lines so as to be paired while placing the center line thereof in between. The dimensional measurement of the resist film having these patterns formed therein is made under a CD-SEM, by specifying a measurement-target chip area out of a plurality of chip areas, and by specifying a position of a critical-dimension pattern on the left thereof. Then, the distance of two linear portions configuring the critical-dimension pattern is measured, wherein a portion at a point of measurement on the measurement-target chip area side as viewed from the center line of the dicing line is measured. | 11-06-2008 |
20090315028 | Semiconductor substrate and production process thereof - A semiconductor substrate includes a wafer, a first stepped structure formed of plural stepped parts formed on a surface of the wafer with a first area occupation ratio, a second stepped structure formed of plural stepped parts formed on the surface of the wafer with a second, different area occupation ratio, and an interlayer insulation film formed on the surface so as to cover the first and second stepped structures, the interlayer insulation film having a planarized top surface, wherein there are provided at least first and second film-thickness monitoring patterns for monitoring film thickness on the surface in a manner covered by the interlayer insulation film, a first pattern group is formed on the surface such that the first pattern group comprises plural patterns disposed so as to surround the first film-thickness monitoring pattern, a second pattern group is formed on the surface such that the second pattern group comprises plural patterns disposed so as to surround the second film-thickness monitoring pattern, the first film-thickness monitoring pattern and the first pattern group having a third area occupation ratio on the surface, while the second film-thickness monitoring pattern and the second pattern group having a fourth area occupation ratio on the surface, wherein the third area occupation ratio is different from the fourth area occupation ratio. | 12-24-2009 |
20110143459 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A semiconductor substrate includes a wafer including an element area and a non-element area delineating the element area, a first layered structure situated in the element area, a first insulating film covering the first layered structure, and exhibiting a first etching rate with respect to an etching recipe, a second insulating film covering the first layered structure covered by the first insulating film in the element area, and exhibiting a second etching rate with respect to the etching recipe, the second etching rate being greater than the first etching rate, and a second layered structure situated in the non-element area, wherein the second layered structure includes at least a portion of the first layered structure. | 06-16-2011 |