Patent application number | Description | Published |
20090156939 | Composite Passive Materials For Ultrasound Transducers - Provided herein are composite passive layers for ultrasound transducers having acoustic properties that can be easily tailored to the needs of the transducer application using current microfabrication techniques. In an embodiment, a passive layer comprises metal posts embedded in a polymer matrix or other material. The acoustic properties of the passive layer depend on the metal/polymer volume fraction of the passive layer, which can be easily controlled using current microfabrication techniques, e.g., integrated circuit (IC) fabrication techniques. Further, the embedded metal posts provide electrical conduction through the passive layer allowing electrical connections to be made to an active element, e.g., piezoelectric element, of the transducer through the passive layer. Because the embedded metal posts conduct along one line of direction, they can be used to provide separate electrical connections to different active elements in a transducer array through the passive layer. | 06-18-2009 |
20090171216 | Connections For Ultrasound Transducers - Described herein are electrical connections to acoustic elements, e.g., piezoelectric elements. In an exemplary embodiment, a transducer comprises an acoustic element, a passive layer attached to the acoustic element, and a conductive post embedded in the passive layer to provide a direct low resistance electrical connection to the acoustic element. In one embodiment, the conductive post has an exposed side surface allowing electrical connections to be made from the side of the transducer. In another embodiment, the conductive post has an exposed bottom surface allowing electrical connections to be made from the bottom of the transducer. In another embodiment, the transducer comprises an extension substrate adjacent to the acoustic element for protecting the acoustic element from thermal stress when a connection is made to the transducer at high temperatures. In one embodiment, a circuit is integrated on the extension substrate to process signals to or from the acoustic element. | 07-02-2009 |
20090264769 | INTRAVASCULAR ULTRASOUND IMAGING SYSTEMS WITH SEALED CATHETERS FILLED WITH AN ACOUSTICALLY-FAVORABLE MEDIUM AND METHODS OF MAKING AND USING - A catheter assembly for an intravascular ultrasound system includes a catheter and an imaging core. The catheter has a longitudinal length, a distal end, and a proximal end. The catheter includes a sealable lumen extending along the longitudinal length of the catheter from the proximal end to the distal end, and a movable plunger or a movable seal in fluid communication with the lumen. The movable plunger or the movable seal provides a gas-tight seal. The movable plunger or the movable seal is configured and arranged for adjusting to changes in volume of the lumen when the lumen is filled with an acoustically-favorable medium and sealed. The imaging core is configured and arranged for inserting into the sealable lumen and for coupling to a control module. | 10-22-2009 |
20100325855 | COMPOSITE PASSIVE MATERIALS FOR ULTRASOUND TRANSDUCERS - Provided herein are composite passive layers for ultrasound transducers having acoustic properties that can be easily tailored to the needs of the transducer application using current microfabrication techniques. In an embodiment, a passive layer comprises metal posts embedded in a polymer matrix or other material. The acoustic properties of the passive layer depend on the metal/polymer volume fraction of the passive layer, which can be easily controlled using current microfabrication techniques, e.g., integrated circuit (IC) fabrication techniques. Further, the embedded metal posts provide electrical conduction through the passive layer allowing electrical connections to be made to an active element, e.g., piezoelectric element, of the transducer through the passive layer. Because the embedded metal posts conduct along one line of direction, they can be used to provide separate electrical connections to different active elements in a transducer array through the passive layer. | 12-30-2010 |
20110125027 | SYSTEMS AND METHODS FOR FLUSHING AIR FROM A CATHETER OF AN INTRAVASCULAR ULTRASOUND IMAGING SYSTEM - A catheter assembly for an intravascular ultrasound system includes a hub disposed at a proximal end of a catheter. The hub includes a rotatable connector shaft disposed at least partially in a lumen that extends from the hub to a distal end of the catheter. A pumping apparatus is coupled to the connector shaft such that rotation of the connector shaft causes a corresponding rotation of the pumping apparatus. A reservoir is in fluid communication with the pumping apparatus. The reservoir is configured and arranged for inputting an acoustically-favorable medium to the pumping apparatus. An imaging core is configured and arranged for inserting into the lumen. The imaging core includes an imaging device coupled to a rotatable drive member. The rotatable connector shaft is coupled to a proximal end of the drive member such that rotation of the connector shaft causes a corresponding rotation of the imaging core. | 05-26-2011 |
20120253197 | SYSTEMS AND METHODS FOR FLUSHING BUBBLES FROM A CATHETER OF AN INTRAVASCULAR ULTRASOUND IMAGING SYSTEM - An intravascular ultrasound imaging system includes a catheter that is insertable into a patient blood vessel. A flushing assembly is in fluid communication with a lumen of the catheter. The flushing assembly flushes air bubbles formed in acoustically-favorable medium in the catheter lumen in response to an event other than a user-initiated flushing prompt. The flushing assembly includes a reservoir containing acoustically-favorable medium for input into the catheter lumen, and a pump coupled to the reservoir. The pump pumps the acoustically-favorable medium from the reservoir to the catheter lumen. A connector is in fluid communication with the reservoir. The connector is coupleable with the catheter lumen. A controller is coupled to the pump. The controller is configured and arranged for controlling operation of the pump. | 10-04-2012 |
Patent application number | Description | Published |
20090004475 | MAGNETIC MATERIALS MADE FROM MAGNETIC NANOPARTICLES AND ASSOCIATED METHODS - A method and apparatus is provided for creating soft magnetic materials for low-loss inductive devices that achieves low eddy currents, low coercivity, and high permeability at high frequency. The soft magnetic material utilizes magnetic nanoparticles that take advantage of desired properties of two or more particle types. The magnetic nanoparticles are single domain particles that are optimized to enhance exchange coupling. | 01-01-2009 |
20100061877 | MAGNETIC MATERIALS, AND METHODS OF FORMATION - In a soft magnetic material, multiple flake-shaped magnetic particles: are coated by respective magnetic insulators; contain respective groups of magnetic nanoparticles; and are compacted to achieve magnetic exchange coupling between adjacent flake-shaped magnetic particles, and between adjacent magnetic nanoparticles within at least one of the flake-shaped magnetic particles. | 03-11-2010 |
20100289113 | FABRICATION PROCESS OF A HYBRID SEMICONDUCTOR SUBSTRATE - The present invention relates to a method for manufacturing a hybrid semiconductor substrate comprising the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOI) region, that comprises an insulating layer over a base substrate and a SeOI layer over the insulating layer, and a bulk semiconductor region, wherein the SeOI region and the bulk semiconductor region share the same base substrate; (b) providing a mask layer over the SeOI region; and (c) forming a first impurity level by doping the SeOI region and the bulk semiconductor region simultaneously such that the first impurity level in the SeOI region is contained within the mask. Thereby avoiding higher number of process steps involved in the manufacturing process of hybrid semiconductor substrate. | 11-18-2010 |
20120013012 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods. | 01-19-2012 |
20120013013 | TEMPORARY SEMICONDUCTOR STRUCTURE BONDING METHODS AND RELATED BONDED SEMICONDUCTOR STRUCTURES - Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods. | 01-19-2012 |
20120061794 | METHODS OF FORMING THROUGH WAFER INTERCONNECTS IN SEMICONDUCTOR STRUCTURES USING SACRIFICIAL MATERIAL, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of fabricating semiconductor structures include providing a sacrificial material within a via recess, forming a first portion of a through wafer interconnect in the semiconductor structure, and replacing the sacrificial material with conductive material to form a second portion of the through wafer interconnect. Semiconductor structures are formed by such methods. For example, a semiconductor structure may include a sacrificial material within a via recess, and a first portion of a through wafer interconnect that is aligned with the via recess. Semiconductor structures include through wafer interconnects comprising two or more portions having a boundary therebetween. | 03-15-2012 |
20120153484 | METHODS FOR DIRECTLY BONDING TOGETHER SEMICONDUCTOR STRUCTURES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS - Embodiments of the present invention include methods of directly bonding together semiconductor structures. In some embodiments, a cap layer may be provided at an interface between directly bonded metal features of the semiconductor structures. In some embodiments, impurities are provided within the directly bonded metal features of the semiconductor structures. Bonded semiconductor structures are formed using such methods. | 06-21-2012 |
20120248621 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of forming bonded semiconductor structures include providing a first semiconductor structure including a device structure, bonding a second semiconductor structure to the first semiconductor structure below about 400° C., forming a through wafer interconnect through the second semiconductor structure and into the first semiconductor structure, and bonding a third semiconductor structure to the second semiconductor structure on a side thereof opposite the first semiconductor structure. In additional embodiments, a first semiconductor structure is provided. Ions are implanted into a second semiconductor structure. The second semiconductor structure is bonded to the first semiconductor structure. The second semiconductor structure is fractured along an ion implant plane, a through wafer interconnect is formed at least partially through the first and second semiconductor structures, and a third semiconductor structure is bonded to the second semiconductor structure on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are formed using such methods. | 10-04-2012 |
20120248622 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES INCLUDING TWO OR MORE PROCESSED SEMICONDUCTOR STRUCTURES CARRIED BY A COMMON SUBSTRATE, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of forming semiconductor devices include providing a substrate including a layer of semiconductor material on a layer of electrically insulating material. A first metallization layer is formed over a first side of the layer of semiconductor material. Through wafer interconnects are formed at least partially through the substrate. A second metallization layer is formed over a second side of the layer of semiconductor material opposite the first side thereof. An electrical pathway is provided that extends through the first metallization layer, the substrate, and the second metallization layer between a first processed semiconductor structure carried by the substrate on the first side of the layer of semiconductor material and a second processed semiconductor structure carried by the substrate on the first side of the layer of semiconductor material. Semiconductor structures are fabricated using such methods. | 10-04-2012 |
20120252162 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods. | 10-04-2012 |
20120252189 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES AND INTERMEDIATE STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods. | 10-04-2012 |
20120292748 | METHODS AND STRUCTURES FOR FORMING INTEGRATED SEMICONDUCTOR STRUCTURES - The invention provides methods and structures for fabricating a semiconductor structure and particularly for forming a semiconductor structure with improved planarity for achieving a bonded semiconductor structure comprising a processed semiconductor structure and a number of bonded semiconductor layers. Methods for forming semiconductor structures include forming a dielectric layer over a non-planar surface of a processed semiconductor structure, planarizing a surface of the dielectric layer on a side thereof opposite the processed semiconductor structure, and attaching a semiconductor structure to the planarized surface of the dielectric layer. Semiconductor structures include a dielectric layer overlaying a non-planar surface of a processed semiconductor structure, and a masking layer overlaying the dielectric layer on a side thereof opposite the processed semiconductor structure. The masking layer includes a plurality of mask openings over conductive regions of the non-planar surface of the processed semiconductor structure. | 11-22-2012 |
20120313237 | BONDED SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING SAME - Embodiments of the invention include methods and structures for fabricating a semiconductor structure, and, particularly for improving the planarity of a bonded semiconductor structure comprising a processed semiconductor structure and a semiconductor structure. | 12-13-2012 |
20130015442 | BONDED SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME - Methods of forming semiconductor structures include transferring a portion ( | 01-17-2013 |
20130020704 | BONDING SURFACES FOR DIRECT BONDING OF SEMICONDUCTOR STRUCTURES - Methods of directly bonding a first semiconductor structure to a second semiconductor structure include directly bonding at least one device structure of a first semiconductor structure to at least one device structure of a second semiconductor structure in a conductive material-to-conductive material direct bonding process. In some embodiments, at least one device structure of the first semiconductor structure may be caused to project a distance beyond an adjacent dielectric material on the first semiconductor structure prior to the bonding process. In some embodiments, one or more of the device structures may include a plurality of integral protrusions that extend from a base structure. Bonded semiconductor structures are fabricated using such methods. | 01-24-2013 |
20130037959 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES INCLUDING INTERCONNECT LAYERS HAVING ONE OR MORE OF ELECTRICAL, OPTICAL, AND FLUIDIC INTERCONNECTS THEREIN, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS - Methods of forming bonded semiconductor structures include providing a substrate structure including a relatively thinner layer of material on a thicker substrate body, and forming a plurality of through wafer interconnects through the layer of material. A first semiconductor structure may be bonded over the thin layer of material, and at least one conductive feature of the first semiconductor structure may be electrically coupled with at least one of the through wafer interconnects. A transferred layer of material may be provided over the first semiconductor structure on a side thereof opposite the first substrate structure, and at least one of an electrical interconnect, an optical interconnect, and a fluidic interconnect may be formed in the transferred layer of material. A second semiconductor structure may be provided over the transferred layer of material on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are fabricated using such methods. | 02-14-2013 |
20130037960 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES IN 3D INTEGRATION PROCESSES USING RECOVERABLE SUBSTRATES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of forming bonded semiconductor structures include forming through wafer interconnects through a layer of material of a first substrate structure, bonding one or more semiconductor structures over the layer of material, and electrically coupling the semiconductor structures with the through wafer interconnects. A second substrate structure may be bonded over the processed semiconductor structures on a side thereof opposite the first substrate structure. A portion of the first substrate structure then may be removed, leaving the layer of material with the through wafer interconnects therein attached to the processed semiconductor structures. At least one through wafer interconnects then may be electrically coupled to a conductive feature of another structure, after which the second substrate structure may be removed. Bonded semiconductor structures are formed using such methods. | 02-14-2013 |
20130039615 | THREE DIMENSIONALLY INTEGRATED SEMICONDUCTOR SYSTEMS INCLUDING PHOTOACTIVE DEVICES AND SEMICONDUCTOR-ON-INSULATOR SUBSTRATES, AND METHODS OF FORMING SUCH THREE DIMENSIONALLY INTEGRATED SEMICONDUCTOR SYSTEMS - Three dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling an waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter. | 02-14-2013 |
20130043600 | BONDED SEMICONDUCTOR STRUCTURES INCLUDING TWO OR MORE PROCESSED SEMICONDUCTOR STRUCTURES CARRIED BY A COMMON SUBSTRATE - Methods of forming semiconductor devices include providing a substrate including a layer of semiconductor material on a layer of electrically insulating material. A first metallization layer is formed over a first side of the layer of semiconductor material. Through wafer interconnects are foamed at least partially through the substrate. A second metallization layer is formed over a second side of the layer of semiconductor material opposite the first side thereof. An electrical pathway is provided that extends through the first metallization layer, the substrate, and the second metallization layer between a first processed semiconductor structure carried by the substrate on the first side of the layer of semiconductor material and a second processed semiconductor structure carried by the substrate on the first side of the layer of semiconductor material. Semiconductor structures are fabricated using such methods. | 02-21-2013 |
20130075868 | METHODS OF TRANSFERRING LAYERS OF MATERIAL IN 3D INTEGRATION PROCESSES AND RELATED STRUCTURES AND DEVICES - Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods. | 03-28-2013 |
20130175672 | LOW TEMPERATURE LAYER TRANSFER PROCESS USING DONOR STRUCTURE WITH MATERIAL IN RECESSES IN TRANSFER LAYER, SEMICONDUCTOR STRUCTURES FABRICATED USING SUCH METHODS - Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming recesses in the donor structure, implanting ions into the donor structure to form a generally planar, inhomogeneous weakened zone therein, and providing material within the recesses. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods. | 07-11-2013 |
20130214423 | METHODS FOR FABRICATION OF SEMICONDUCTOR STRUCTURES INCLUDING INTERPOSERS WITH CONDUCTIVE VIAS, AND RELATED STRUCTURES AND DEVICES - Methods of fabricating semiconductor devices that include interposers include the formation of conductive vias through a material layer on a recoverable substrate. A carrier substrate is bonded over the material layer, and the recoverable substrate is then separated from the material layer to recover the recoverable substrate. A detachable interface may be provided between the material layer and the recoverable substrate to facilitate the separation. Electrical contacts that communicate electrically with the conductive vias may be formed over the material layer on a side thereof opposite the carrier substrate. Semiconductor structures and devices are formed using such methods. | 08-22-2013 |
20130217206 | METHODS OF PROVIDING THIN LAYERS OF CRYSTALLINE SEMICONDUCTOR MATERIAL, AND RELATED STRUCTURES AND DEVICES - Methods of fabricating semiconductor devices include forming a metal silicide in a portion of a crystalline silicon layer, and etching the metal silicide using an etchant selective to the metal silicide relative to the crystalline silicon to provide a thin crystalline silicon layer. Silicon-on-insulator (SOI) substrates may be formed by providing a layer of crystalline silicon over a base substrate with a dielectric material between the layer of crystalline silicone and the base substrate, and thinning the layer of crystalline silicon by forming a metal silicide layer in a portion of the crystalline silicon, and then etching the metal silicide layer using an etchant selective to the metal silicide layer relative to the crystalline silicon. | 08-22-2013 |
20130256907 | BONDED PROCESSED SEMICONDUCTOR STRUCTURES AND CARRIERS - Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods. | 10-03-2013 |
20130299997 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES - Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods. | 11-14-2013 |
20140001604 | SEMICONDUCTOR STRUCTURES INCLUDING FLUIDIC MICROCHANNELS FOR COOLING AND RELATED METHODS | 01-02-2014 |
20140001642 | INTERPOSERS INCLUDING FLUIDIC MICROCHANNELS AND RELATED STRUCTURES AND METHODS | 01-02-2014 |
20140369646 | METHODS OF FORMING THREE-DIMENSIONALLY INTEGRATED SEMICONDUCTOR SYSTEMS INCLUDING PHOTOACTIVE DEVICES AND SEMICONDUCTOR-ON-INSULATOR SUBSTRATES - Three-dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter. | 12-18-2014 |