Stahlbush
James Richard Stahlbush, Midland, MI US
Patent application number | Description | Published |
---|---|---|
20080319237 | Method for Stabilizing a Cation Exchange Resin Prior to Use as an Acid Catalyst and Use of Said Stabilized Cation Exchange Resin in a Chemical Process - A method for preventing the degradation of a catalyst during storage of the catalyst and prior to using the catalyst in a chemical process comprising treating the catalyst with an antioxidant and storing the treated catalyst until further use. The stabilized treated catalyst may be used in a process for producing organic chemicals such as in a process for producing bisphenol A. | 12-25-2008 |
20110152578 | METHOD FOR STABILIZING A CATION EXCHANGE RESIN PRIOR TO USE AS AN ACID CATALST AND USE OF SAID STABILIZED CATION EXCHANGE RESIN IN A CHEMICAL PROCESS - A method for preventing the degradation of a catalyst during storage of the catalyst and prior to using the catalyst in a chemical process comprising treating the catalyst with an antioxidant and storing the treated catalyst until further use. The stabilized treated catalyst may be used in a process for producing organic chemicals such as in a process for producing bisphenol A. | 06-23-2011 |
Katherine H. Stahlbush, Midland, MI US
Patent application number | Description | Published |
---|---|---|
20080319237 | Method for Stabilizing a Cation Exchange Resin Prior to Use as an Acid Catalyst and Use of Said Stabilized Cation Exchange Resin in a Chemical Process - A method for preventing the degradation of a catalyst during storage of the catalyst and prior to using the catalyst in a chemical process comprising treating the catalyst with an antioxidant and storing the treated catalyst until further use. The stabilized treated catalyst may be used in a process for producing organic chemicals such as in a process for producing bisphenol A. | 12-25-2008 |
20110152578 | METHOD FOR STABILIZING A CATION EXCHANGE RESIN PRIOR TO USE AS AN ACID CATALST AND USE OF SAID STABILIZED CATION EXCHANGE RESIN IN A CHEMICAL PROCESS - A method for preventing the degradation of a catalyst during storage of the catalyst and prior to using the catalyst in a chemical process comprising treating the catalyst with an antioxidant and storing the treated catalyst until further use. The stabilized treated catalyst may be used in a process for producing organic chemicals such as in a process for producing bisphenol A. | 06-23-2011 |
Robert E. Stahlbush, Silver Spring, MD US
Patent application number | Description | Published |
---|---|---|
20090114148 | METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATION CONCENTRATIONS - A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method. | 05-07-2009 |
20110045281 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC - A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm | 02-24-2011 |
20140190399 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS - A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas. | 07-10-2014 |
20140193965 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS - A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas. | 07-10-2014 |
Robert E. Stahlbush, Silverspring, MD US
Patent application number | Description | Published |
---|---|---|
20090273390 | METHOD OF MEDIATING FORWARD VOLTAGE DRIFT IN A SIC DEVICE - A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift. | 11-05-2009 |