Patent application number | Description | Published |
20100207212 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED BY SAME METHOD - To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layer | 08-19-2010 |
20100252906 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device including a thin film device unit including a TFT, and a peripheral device unit provided around the thin film device unit and including a semiconductor element, includes a first step of preparing a substrate, a second step of bonding the peripheral device unit directly to the substrate, and a third step of forming the thin film device unit on the substrate to which the peripheral device unit is bonded. | 10-07-2010 |
20100270618 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - The present invention provides a production method of a semiconductor device, capable of improving surface flatness of a semiconductor chip formed on a semiconductor substrate and thereby suppressing a variation in electrical characteristics of the semiconductor chip transferred onto a substrate with an insulating surface, and further capable of improving production yield. The present invention provides a production method of a semiconductor device including a semiconductor chip on a substrate with an insulating surface, the semiconductor chip having a conductive pattern film,
| 10-28-2010 |
20100270658 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer ( | 10-28-2010 |
20100283103 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A method for manufacturing a semiconductor device includes: a first step of forming a base layer, which includes an element portion having a gate electrode and a flat interlayer insulating film formed so as to cover the gate electrode; a second step of ion implanting a delamination material into the base layer to form a delamination layer; a third step of bonding the base layer to a substrate; and a fourth step of separating and removing a part of the base layer along the delamination layer. An implantation depth of the delamination material in the gate electrode is substantially the same as that of the delamination material in the interlayer insulating film. | 11-11-2010 |
20100289037 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - The present invention provides a semiconductor device having a plurality of MOS transistors with controllable threshold values in the same face and easy to manufacture, a manufacturing method thereof and a display device. The invention is a semiconductor device having a plurality of MOS transistors in the same face each having a structure formed by stacking a semiconductor active layer, a gate insulator, and a gate electrode, wherein the semiconductor device includes: an insulating layer stacked on a side opposite to a gate electrode side of the semiconductor active layer; and a conductive electrode stacked on a side opposite to a semiconductor active layer side of the insulating layer and extending over at least two of the plurality of MOS transistors. | 11-18-2010 |
20110042693 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 02-24-2011 |
20110241174 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed. | 10-06-2011 |
20110272694 | INSULATING SUBSTRATE FOR SEMICONDUCTOR APPARATUS, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS - The present invention is intended to provide a glass substrate ( | 11-10-2011 |
20110278678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - This invention provides a semiconductor device having a semiconductor element that has low-resistance and a stable contact connection, even when the wiring is connected from the side of the single-crystal silicon layer on which the impurity concentration is lower. This invention provides a semiconductor device comprising, on a substrate, a semiconductor device having a single-crystal semiconductor film and a wiring connected to the single-crystal semiconductor film, and in the single-crystal semiconductor film, an impurity concentration on one surface side is different from an impurity concentration on another surface side, the wiring being connected to the surface side on which the impurity concentration is lower, the resistivity of a region of the single-crystal semiconductor film to which the wiring is connected being no less than 1 μΩcm and no more than 0.01 Ωcm. | 11-17-2011 |
20120038022 | INSULATING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - Disclosed is a glass substrate ( | 02-16-2012 |
20120262660 | DISPLAY DEVICE - An organic EL display device ( | 10-18-2012 |
20140375910 | TOUCH-PANEL SUBSTRATE - On a resin substrate ( | 12-25-2014 |
Patent application number | Description | Published |
20100155905 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed. | 06-24-2010 |
20100244136 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance. | 09-30-2010 |
20100244185 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics. | 09-30-2010 |
20100252885 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device ( | 10-07-2010 |
20100283104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step. | 11-11-2010 |
20100295105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element. | 11-25-2010 |
20110006376 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND DISPLAY DEVICE - The present invention provides a semiconductor device capable of improving subthreshold characteristics of a PMOS transistor that is included in a thinned base layer and bonded to another substrate, a production method of such a semiconductor device, and a display device. The semiconductor device of the present invention is a semiconductor device, including:
| 01-13-2011 |
20110309467 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a semiconductor device including a substrate for bonding ( | 12-22-2011 |
20120155038 | FLEXIBLE CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF - The present invention provides a high-performance flexible circuit board having excellent flexibility, a fine wiring pattern, and fine electric contacts, and a manufacturing method thereof. In a flexible circuit board ( | 06-21-2012 |
20120326264 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device of the present invention includes the steps of forming a single crystal semiconductor device, attaching the single crystal semiconductor device on a substrate, forming a TFT on a glass substrate, and electrically connecting the single crystal semiconductor device and the TFT. In the step of forming a single crystal semiconductor device, an alignment mark is provided at the single crystal semiconductor device. In the step of attaching a single crystal semiconductor device, the single crystal semiconductor device is positioned and attached on the glass substrate based on the machining accuracy of an attachment device. In the step of forming a TFT, the TFT is positioned and provided on the glass substrate based on the alignment mark provided at the single crystal semiconductor device. | 12-27-2012 |
20130009302 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device ( | 01-10-2013 |
20130037816 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 02-14-2013 |
20130100392 | FLEXIBLE DISPLAY DEVICE AND METHOD FOR MANUFACTURING FLEXIBLE DISPLAY DEVICE - A flexible display device ( | 04-25-2013 |
20130265530 | DISPLAY DEVICE AND THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR - A display device includes a TFT substrate ( | 10-10-2013 |
20140078458 | ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - The thickness of a rear surface-side inorganic film ( | 03-20-2014 |
20140320777 | DISPLAY DEVICE SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - A liquid crystal display device ( | 10-30-2014 |
Patent application number | Description | Published |
20080318390 | Method for fabricating semiconductor device and semiconductor device - A method for fabricating a semiconductor device according to the present invention is a method for fabricating a semiconductor device including a substrate layer including a plurality of first regions each having an active region and a plurality of second regions each being provided between adjacent ones of the first region. The fabrication method includes an isolation insulation film formation step of forming an isolation insulation film in each of the second regions so that a surface of the isolation insulation film becomes at the same height as that of a surface of a gate oxide film covering the active region, a peeling layer formation step of forming a peeling layer by ion-implanting hydrogen into the substrate layer after the isolation insulation film formation step, and a separation step of separating part of the substrate layer along the peeling layer. | 12-25-2008 |
20090001504 | Method for Transferring Semiconductor Element, Method for Manufacturing Semiconductor Device, and Semiconductor Device - A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the monocrystalline Si wafer when transferring the transistor. The transistor is then made into a chip and transferred onto a TFT substrate. In order to transfer the transistor which has been once separated from the monocrystalline Si wafer, a different method from a stripping method utilizing ion doping is employed. | 01-01-2009 |
20100059892 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF DISPLAY DEVICE, SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT - The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer. | 03-11-2010 |
20100148261 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer. | 06-17-2010 |