Patent application number | Description | Published |
20080206654 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES, AND METHOD FOR FORMING A PATTERN ONTO AN EXPOSURE MASK - A method for manufacturing a semiconductor device includes calculating a correction amount for correcting a dimension error generated in a pattern, by using an area and a total length of sides of a perimeter of the pattern included in each grid region of a plurality of mesh-like grid regions made by virtually dividing a pattern creation region of an exposure mask, exposing the pattern whose dimension has been corrected by the correction amount onto a substrate on which a resist film is coated, developing the resist film after the exposing, and processing the substrate by using a resist pattern after the developing. | 08-28-2008 |
20080217554 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed. | 09-11-2008 |
20080296515 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged particle beam writing apparatus includes a stage on which a target object is placed and which moves in a predetermined direction, a first column configured to irradiate a first charged particle beam on a writing region of the target object, a second column which is located at the back of the first column in the predetermined direction and configured to irradiate a second charged particle beam on the writing region of the target object, and a sensor configured to measure a height level of the target object at any one of a position in front of a position where the first column irradiates the first charged particle beam in the predetermined direction and a position almost immediately under the position where the first charged particle beam is irradiated. | 12-04-2008 |
20090008568 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD THEREOF - A charged particle beam writing apparatus includes a unit emitting a charged particle beam, a stage on which a target workpiece to be written is placed, a unit correcting a reference position of a small region in a writing region, based on a pattern distortion obtained from positions of figures spread over substantially all writing region of a dummy target workpiece and written without correcting, a first deflector deflecting the beam, based on a corrected reference position obtained by correcting the reference position, a correction unit correcting a relative distance from the corrected reference position to an arbitrary position in the small region, based on a pattern distortion of the dummy, by using the reference position and a coefficient of a correction equation for correcting the reference position, and a second deflector further deflecting the beam from a position deflected by the first deflector, based on the relative distance corrected. | 01-08-2009 |
20090040513 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - A pattern inspection apparatus includes a light source configured to emit a pulsed light, a stage on which an inspection target workpiece is placed, a sensor, including a plurality of light receiving elements two-dimensionally arrayed, configured to capture a pattern image in a two-dimensional region of the inspection target workpiece which is irradiated with the pulsed light, by using the plurality of light receiving elements, and a comparing unit configured to compare data of the pattern image with predetermined reference pattern image data, wherein the stage moves to be shifted by a number of pixels, being the number of natural number times one pixel, between pulses of the pulsed light. | 02-12-2009 |
20090057570 | WRITING DATA CREATION METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - A method of creating writing data for writing a pattern on a target workpiece by using a writing apparatus provided with a plurality of columns that emit charged particle beams includes inputting information on distance between optical centers of the plurality of columns, inputting layout data and virtually dividing a writing region indicated by the layout data into a plurality of small regions, by a width of one integer-th of the distance indicated by the information on distance, converting, for each small region, the layout data to a format adaptable to the writing apparatus to create, for the each small region, the writing data whose writing region is divided into the small regions, and outputting the writing data. | 03-05-2009 |
20090057576 | CHARGED PARTICLE BEAM WRITING METHOD - A writing method includes emitting a first charged particle beam formed to be a first shape by passing through a first shaping aperture and a second shaping aperture, onto a target workpiece; and emitting a second charged particle beam formed to be a second shape by passing through the first shaping aperture and the second shaping aperture, wherein the second charged particle beam is superimposed onto a same position exposed by the first charged particle beam and is formed by using an opposite sides of respective first and second shaping apertures to those used for the first shape. | 03-05-2009 |
20090087082 | PATTERN INSPECTION APPARATUS AND METHOD - A pattern inspection apparatus includes a stage configured to mount a target workpiece to be inspected thereon, a sensor configured to include a plurality of light receiving elements arrayed in a second direction orthogonal to a first direction which moves relatively to the stage, and to capture optical images of the target workpiece by using the plurality of light receiving elements, an accumulation unit configured to accumulate each pixel data of the optical images overlappingly captured by the sensor at positions shifted each other in the second direction by a pixel unit, for each pixel, and a comparison unit configured to compare the each pixel data accumulated for each pixel with predetermined reference data. | 04-02-2009 |
20090129664 | PATTERN INSPECTION APPARATUS AND METHOD - A pattern inspection apparatus includes a stage configured to mount thereon a target workpiece to be inspected where patterns are formed, at least one sensor configured to move relatively to the stage and capture optical images of the target workpiece to be inspected, a first comparing unit configured to compare first pixel data of an optical image captured by one of the at least one sensor with first reference data at a position corresponding to a position of the first pixel data, and a second comparing unit configured to compare second pixel data of an optical image captured by one of the at least one sensor at a position shifted by a sub-pixel unit from the position where the optical image of the first pixel data is captured, with second reference data at a position corresponding to the position of the second pixel data. | 05-21-2009 |
20090200488 | CHARGED PARTICLE BEAM WRITING APPARATUS, AND APPARATUS AND METHOD FOR CORRECTING DIMENSION ERROR OF PATTERN - A charged particle beam writing apparatus includes a first area density calculation unit configured to calculate a first area density occupied by a pattern of a first dimension in a predetermined region, a first dimension error calculation unit configured to calculate a first dimension error caused by a loading effect, using the first area density, a first dimension calculation unit configured to calculate a second dimension of a pattern obtained by correcting the first dimension error of the first dimension, a second area density calculation unit configured to calculate a second area density occupied by the pattern of the second dimension in the predetermined region, a second dimension error calculation unit configured to calculate a second dimension error caused by the loading effect, using the second area density, a second dimension calculation unit configured to calculate a third dimension by adding the second dimension error to the second dimension, a judgment unit configured to judge whether a difference between the first dimension and the third dimension is within a predetermined range or not, and a writing unit configured to write the pattern of the second dimension in which the difference is within the predetermined range, onto a target workpiece by using a charged particle beam. | 08-13-2009 |
20100015537 | BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS - A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object. | 01-21-2010 |
20100060890 | APPARATUS AND METHOD FOR PATTERN INSPECTION - A pattern inspection apparatus includes a pulsed light source configured to emit pulsed light; a stage configured to mount thereon an inspection target object with a pattern formed thereon; a time delay integration (TDI) sensor configured to detect, a plurality of times with a time delay, each pixel value of an optical image of the inspection target object, wherein the optical image is acquired by emitting the pulsed light onto the inspection target object, and to integrate a detected each pixel value for each pixel of the optical image; a light quantity sensor configured to detect a light quantity of the pulsed light after emitting the pulsed light onto the inspection target object; a light quantity measurement circuit configured to input the light quantity detected by the light quantity sensor, and to measure a light quantity of each pulse while being synchronized with a period of the pulsed light; a correction unit configured to input the light quantity of each pulse and an integrated pixel value output from the TDI sensor, and to correct the integrated pixel value output from the TDI sensor, for each pixel of the optical image, using a total light quantity of the light quantity of corresponding each pulse; and an inspection unit configured to inspect whether there is a defect of the pattern, using the integrated pixel value corrected. | 03-11-2010 |
20100072403 | PATTERN FORMING APPARATUS AND PATTERN FORMING METHOD - A pattern forming apparatus using lithography technique includes a stage configured to allow a target object to be placed thereon; a plurality of columns configured to form patterns on the target object by using a charged particle beam while moving relatively to the stage; a pattern forming rule setting unit configured to set a pattern forming rule depending on a position of broken one of the plurality of columns; a region setting unit configured to set regions so that unbroken ones of the plurality of columns respectively form a pattern in one of the regions; a plurality of control circuits each configured to control any one of the plurality of columns different from others of the plurality of columns controlled by others of the plurality of control circuits; and a pattern forming data processing unit configured to perform a converting process on pattern forming data for the regions set to output a corresponding data generated by the converting process to the control circuit of a corresponding one of the unbroken ones of the plurality of columns respectively. | 03-25-2010 |
20100173235 | METHOD AND APPARATUS FOR WRITING - A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose. | 07-08-2010 |
20110188734 | DEFECT ESTIMATION DEVICE AND METHOD AND INSPECTION SYSTEM AND METHOD - Acquired mask data of a defect portion is sent to a simulated repair circuit | 08-04-2011 |
20110238897 | MEMORY SYSTEM, PERSONAL COMPUTER, AND METHOD OF CONTROLLING THE MEMORY SYSTEM - According to one embodiment, a memory system includes: a nonvolatile semiconductor memory including a plurality of normal blocks and at least one dummy block, each of the normal blocks being a unit of data erasing; a writing control unit that rewrites the dummy block the number of times equal to or larger than a maximum number of times among the numbers of times of rewriting of the normal blocks; a monitor unit that monitors a data erasing time or a data writing time of the dummy block; and a wear-leveling control unit that averages the numbers of times of rewriting of the normal blocks. The memory system determines, based on a monitor result of the monitor unit, possibility of continuation of the rewriting of the normal blocks. | 09-29-2011 |
20120036486 | METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD - A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing. | 02-09-2012 |
20120104286 | METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD - A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing. | 05-03-2012 |
20120108063 | BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS - A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object. | 05-03-2012 |
20120252215 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, PATTERN WRITING APPARATUS, RECORDING MEDIUM RECORDING PROGRAM, AND PATTERN TRANSFER APPARATUS - A method for fabricating a semiconductor device, includes dividing a pattern region of a desired pattern that is to be formed on a semiconductor substrate into a plurality of sub-regions; calculating combination condition including a shape of illumination light for transferring and a mask pattern obtained by correcting a partial pattern in the sub-region of the desired pattern formed on a mask used during transferring for each of the plurality of sub-regions, to make a dimension error of the partial pattern of each of the plurality of sub-regions smaller when transferred to the semiconductor substrate; and forming the desired pattern by making multiple exposures on the semiconductor substrate in such a way that the partial patterns of the sub-regions divided are sequentially transferred by transferring a pattern to the semiconductor substrate using the combination conditions calculated for each of the sub-regions. | 10-04-2012 |
20130094752 | DEFECT ESTIMATION DEVICE AND METHOD AND INSPECTION SYSTEM AND METHOD - Acquired mask data of a defect portion is sent to a simulated repair circuit | 04-18-2013 |