Patent application number | Description | Published |
20100005896 | MEASUREMENT OF STRAIN IN AN ADHESIVELY BONDED JOINT INCLUDING MAGNETOSTRICTIVE MATERIAL - Sensing strain in an adhesively bonded joint includes inducing a strain wave in the joint, and sensing a change in local magnetic characteristics in the joint. | 01-14-2010 |
20110062955 | MULTIFERROIC ANTENNA/SENSOR - A multiferroic antenna and sensor where the sensor includes a multiferroic stack of multiple connected multiferroic layer-pairs, each multiferroic layer-pair comprising an alternating layer of a magnetostrictive material and a piezoelectric material bonded together enabling a high signal sensitivity, a magnetic field of an incident signal causing mechanical strain in the magnetostrictive material layers that strains adjacent piezoelectric material layers producing an electrical voltage in each multiferroic layer-pair proportional to the incident signal. An output of the multiferroic stack comprises the electrical voltage amplified proportional to a total number of multiple connected multiferroic layer-pairs in the multiferroic stack. | 03-17-2011 |
20110139769 | MAGNETIC HEATING BLANKET - A heating blanket comprises a conductor for receiving current and generating a magnetic field in response to the current. The heating blanket may include a susceptor sleeve formed of magnetic material having a Curie temperature. The susceptor sleeve may extend along the conductor and may be inductively heated in response to the magnetic field. | 06-16-2011 |
20120145702 | SMART HEATING BLANKET - A heating blanket may include a conductor for receiving electrical current and generating a magnetic field in response to the electrical current. A plurality of sleeve segments may be mounted on the conductor in end-to-end relation to one another. Each one of the sleeve segments may be formed of magnetic material having a Curie temperature. The sleeve segments may be inductively heated in response to the magnetic field. | 06-14-2012 |
20120305167 | AIRCRAFT STRUCTURES BONDED WITH ADHESIVE INCLUDING MAGNETOSTRICTIVE MATERIAL - First and second aircraft structures are bonded together with an adhesive including strain-sensitive magnetostrictive material. | 12-06-2012 |
20130081475 | ARRAY FOR SENSING AND INDUCING STRAIN IN AN ADHESIVELY BONDED JOINT INCLUDING MAGNETOSTRICTIVE MATERIAL - Sensing strain in an adhesively bonded joint includes inducing a strain wave in the joint, and sensing a change in local magnetic characteristics in the joint. | 04-04-2013 |
20140023837 | AIRCRAFT STRUCTURES BONDED WITH ADHESIVE INCLUDING MAGNETOSTRICTIVE MATERIAL - First and second aircraft structures are bonded together with an adhesive including strain-sensitive magnetostrictive material. The magnetostrictive material has a magnetomechanical coefficient greater than e−5. | 01-23-2014 |
20140190954 | DISTRIBUTED TRANSISTOR-BASED POWER SUPPLY FOR SUPPLYING HEAT TO A STRUCTURE - A heating system includes a structure to be heated, and a heating apparatus disposed to heat the structure. The heating apparatus includes a housing member, a plurality of resonant frequency power sources, and a plurality of associated controls. The plurality of resonant frequency power sources are attached to the housing member. The plurality of associated controllers is configured to separately operate the plurality of resonant frequency power sources at resonant frequencies matching heating requirements of the structure. | 07-10-2014 |
20140363637 | Heating Layer for Film Removal - Embodiments of the presently disclosed system include a thin thermoplastic or thermosetting polymer film loaded with non-polymeric inclusions that are susceptible to heating under a time-varying magnetic field. Insertion of this additional heating layer into a structural or semi-structural heterogeneous laminate provides an “on-demand” de-bonding site for laminate deconstruction. For example, in some embodiments when the heating layer is inserted between a cured Carbon-Fiber Reinforced Plastic (CFRP) layer and a Polymeric/Metallic film stackup layer, the heating layer can be selectively heated above its softening point (e.g., by using energy absorbed from a locally-applied time-varying magnetic field) to allow for ease of applique separation from the CFRP layer. | 12-11-2014 |
Patent application number | Description | Published |
20080317699 | Chemically modified dendrimers - Dendrimers comprising N-acyl urea terminal moieties are described herein. The dendrimers can be used, for example, in the treatment of arthritis. | 12-25-2008 |
20090192079 | PROLONGED DELIVERY OF HEPARIN-BINDING GROWTH FACTORS FROM HEPARIN-DERIVATIZED COLLAGEN - The present invention relates to a heparin-derivatized collagen matrix comprising a fragment of heparin covalently linked to a collagen scaffold, wherein the fragment of heparin has molecular weight of less than about 15 kDa, and at least one heparin-binding growth factor (HBGF) or heparin-binding adeno-associated virus (HB-AAV) or a combination thereof and methods for promoting bone growth, bone repair, cartilage repair, bone development, neo-angiogensis, wound healing, tissue engraftment and muscle tissue regeneration and/or tissue augmentation comprising administering a heparin-derivatized collagen matrix that includes at least one heparin-binding growth factor or heparin-binding adeno-associated virus or a combination thereof. | 07-30-2009 |
20130251683 | PROLONGED DELIVERY OF HEPARIN-BINDING GROWTH FACTORS FROM HEPARIN-DERIVATIZED COLLAGEN - The present invention relates to a heparin-derivatized collagen matrix comprising a fragment of heparin covalently linked to a collagen scaffold, wherein the fragment of heparin has molecular weight of less than about 15 kDa, and at least one heparin-binding growth factor (HBGF) or heparin-binding adeno-associated virus (HB-AAV) or a combination thereof and methods for promoting bone growth, bone repair, cartilage repair, bone development, neo-angiogensis, wound healing, tissue engraftment and muscle tissue regeneration and/or tissue augmentation comprising administering a heparin-derivatized collagen matrix that includes at least one heparin-binding growth factor or heparin-binding adeno-associated virus or a combination thereof. | 09-26-2013 |
20140186291 | Chemically Modified Dendrimers - Dendrimers comprising N-acyl urea terminal moieties are described herein. The dendrimers can be used, for example, in the treatment of arthritis. | 07-03-2014 |
Patent application number | Description | Published |
20080258221 | SUBSTRATE SOLUTION FOR BACK GATE CONTROLLED SRAM WITH COEXISTING LOGIC DEVICES - A semiconductor structure that includes at least one logic device region and at least one static random access memory (SRAM) device region wherein each device region includes a double gated field effect transistor (FET) wherein the back gate of each of the FET devices is doped to a specific level so as to improve the performance of the FET devices within the different device regions is provided. In particular, the back gate within the SRAM device region is more heavily doped than the back gate within the logic device region. In order to control short channel effects, the FET device within the logic device region includes a doped channel, while the FET device within the SRAM device region does not. A none uniform lateral doping profile with a low net doping beneath the source/drain regions and a high net doping underneath the channel would provide additional SCE control for the logic device. | 10-23-2008 |
20110198696 | FINNED SEMICONDUCTOR DEVICE WITH OXYGEN DIFFUSION BARRIER REGIONS, AND RELATED FABRICATION METHODS - A semiconductor device and related fabrication methods are provided. One exemplary fabrication method forms a fin arrangement overlying an oxide layer, where the fin arrangement includes one or more semiconductor fin structures. The method continues by nitriding exposed portions of the oxide layer without nitriding the one or more semiconductor fin structures, resulting in nitrided portions of the oxide layer. Thereafter, a gate structure is formed transversely overlying the fin arrangement, and overlying the exposed portions of the oxide layer. The nitrided portions of the oxide layer substantially inhibit diffusion of oxygen from the oxide layer into the gate structure. | 08-18-2011 |
20110237046 | METHOD OF MANUFACTURING A FINNED SEMICONDUCTOR DEVICE STRUCTURE - A method of manufacturing a finned semiconductor device structure is provided. The method begins by providing a substrate having bulk semiconductor material. The method continues by forming a semiconductor fin structure from the bulk semiconductor material, depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, and planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface. Thereafter, a replacement gate procedure is performed to form a gate structure transversely overlying the semiconductor fin structure. | 09-29-2011 |
20120104498 | Semiconductor device having localized extremely thin silicon on insulator channel region - A method of forming a transistor device includes forming a dummy gate stack structure over an SOI starting substrate, comprising a bulk layer, a global BOX layer over the bulk layer, and an SOI layer over the global BOX layer. Self-aligned trenches are formed completely through portions of the SOI layer and the global BOX layer at source and drain regions. Silicon is epitaxially regrown in the source and drain regions, with a local BOX layer re-established in the epitaxially regrown silicon, adjacent to the global BOX layer. A top surface of the local BOX layer is below a top surface of the global BOX layer. Embedded source and drain stressors are formed in the source and drain regions, adjacent a channel region. Silicide contacts are formed on the source and drain regions. The dummy gate stack structure is removed, and a final gate stack structure is formed. | 05-03-2012 |
20130078791 | SEMICONDUCTOR DEVICE FABRICATION METHODS WITH ENHANCED CONTROL IN RECESSING PROCESSES - Semiconductor device fabrication methods having enhanced control in recessing processes are provided. In a method for fabricating a semiconductor device or plurality of them, a structure is formed. The method includes preparing a limited amount of the structure having a depth of less than ten atomic layers for removal. Further, the method includes performing a removal process to remove the limited amount of the structure. The method repeats preparation of successive limited amounts of the structure for removal, and performance of the removal process to form a recess at an upper portion of the structure. | 03-28-2013 |
20130330916 | METHODS OF FORMING HIGH MOBILITY FIN CHANNELS ON THREE DIMENSIONAL SEMICONDUCTOR DEVICES - Disclosed herein are various methods of forming high mobility fin channels on three dimensional semiconductor devices, such as, for example, FinFET semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define an original fin structure for the device, and wherein a portion of a mask layer is positioned above the original fin structure, forming a compressively-stressed material in the trenches and adjacent the portion of mask layer, after forming the compressively-stressed material, removing the portion of the mask layer to thereby expose an upper surface of the original fin structure, and forming a final fin structure above the exposed surface of the original fin structure. | 12-12-2013 |
20140070285 | METHODS OF FORMING SEMICONDUCTOR DEVICES WITH SELF-ALIGNED CONTACTS AND THE RESULTING DEVICES - One method includes forming a sacrificial gate structure above a substrate, forming a first sidewall spacer adjacent a sacrificial gate electrode, removing a portion of the first sidewall spacer to expose a portion of the sidewalls of the sacrificial gate electrode, and forming a liner layer on the exposed sidewalls of the sacrificial gate electrode and above a residual portion of the first sidewall spacer. The method further includes forming a first layer of insulating material above the liner layer, forming a second sidewall spacer above the first layer of insulating material and adjacent the liner layer, performing an etching process to remove the second sidewall spacer and sacrificial gate cap layer to expose an upper surface of the sacrificial gate electrode, removing the sacrificial gate electrode to define a gate cavity at least partially defined laterally by the liner layer, and forming a replacement gate structure in the cavity. | 03-13-2014 |
20140120677 | METHODS OF FORMING ENHANCED MOBILITY CHANNEL REGIONS ON 3D SEMICONDUCTOR DEVICES, AND DEVICES COMPRISING SAME - Disclosed herein are various methods of forming stressed channel regions on 3D semiconductor devices, such as, for example, FinFET semiconductor devices, through use of epitaxially formed materials. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define at least a portion of a fin for the device, and performing an epitaxial deposition process to form an epitaxially formed stress-inducing material in the trenches. | 05-01-2014 |
20140191319 | FINFET COMPATIBLE DIODE FOR ESD PROTECTION - A diode for integration with finFET devices is disclosed. An in-situ doped epitaxial silicon region is grown on the cathode or anode of the diode to increase the surface area of the junction and overall silicon volume for improved heat dissipation during an ESD event. | 07-10-2014 |
20150041906 | METHODS OF FORMING STRESSED FIN CHANNEL STRUCTURES FOR FINFET SEMICONDUCTOR DEVICES - One method disclosed herein includes forming a first stressed conductive layer within the trenches of a FinFET device and above the upper surface of a fin, forming a second stressed conductive layer above the first stressed conductive layer, removing a portion of the second stressed conductive layer and a portion of the first stressed conductive layer that is positioned above the fin while leaving portions of the first stressed conductive layer positioned within the trenches, and forming a conductive layer above the second stressed conductive layer, the upper surface of the fin and the portions of the first stressed conductive layer positioned within the trenches. | 02-12-2015 |