Hitohisa
Hitohisa Ono, Yokkaichi JP
Hitohisa Ono, Oita-Ken JP
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20120241867 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF - In a non-volatile semiconductor memory device, first element isolation insulation layers in a memory cell area are formed by burying a first oxide film in first element isolation trenches of the memory cell area. The top surface of the first oxide film is positioned at a level between the top surface of a semiconductor substrate and the top surface of a first gate electrode. Each of second element isolation insulation layers in a peripheral area includes a first oxide film embedded in the entirety of second element isolation trenches of the peripheral area, and a second oxide film formed on the first oxide film. The top surface of the first oxide film is at a higher level than the top surface of the semiconductor substrate. The top surface of the second oxide film is at a higher level than the top surface of a first conductor film. | 09-27-2012 |
Hitohisa Ono, Oita JP
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20140217475 | MANUFACTURING METHOD OF SOLID-STATE IMAGE PICKUP DEVICE AND SOLID-STATE IMAGE PICKUP DEVICE - In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area adjacent to the transfer gate electrode in the first conductive semiconductor area. A sidewall is formed on a side surface of the transfer gate electrode. An insulating film is formed to extend from a circumference surface of the sidewall on a side of the charge storage area to a position partially covering the upper part of the charge storage area. A first conductive charge storage layer is formed in the charge storage area by implanting first conductive impurities from above, into the charge storage area which is partially covered with the insulating film. | 08-07-2014 |
20140333807 | MANUFACTURING METHOD OF SOLID-STATE IMAGE PICKUP DEVICE AND SOLID-STATE IMAGE PICKUP DEVICE - In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area adjacent to the transfer gate electrode in the first conductive semiconductor area. A sidewall is formed on a side surface of the transfer gate electrode. An insulating film is formed to extend from a circumference surface of the sidewall on a side of the charge storage area to a position partially covering the upper part of the charge storage area. A first conductive charge storage layer is formed in the charge storage area by implanting first conductive impurities from above, into the charge storage area which is partially covered with the insulating film. | 11-13-2014 |
Hitohisa Yamada, Hokkaido JP
Patent application number | Description | Published |
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20080317621 | Process for Producing Mg Alloy - An object of the present invention is to obtain an ingot containing homogeneous ingredients with suppressing ingredient segregation of Y in the melt-production of an Mg alloy containing Y. | 12-25-2008 |
20100269633 | SLAG FOR ELECTROSLAG REMELTING FOR COPPER ALLOY AND METHOD FOR PRODUCING COPPER ALLOY MATERIAL - An object of the invention is to make it possible to produce a copper alloy in which the S content is reduced with no contamination with Al, which has a good casting surface and good internal properties and in which eutectic compounds are refined. The invention relates to a slag for electroslag remelting for copper alloy, including CaF | 10-28-2010 |