Patent application number | Description | Published |
20080206602 | Nanoimprinting of topography for patterned magnetic media - One embodiment in accordance with the invention is a method comprising depositing a material above a disk substrate. The disk substrate is for a data storage device. The material above the disk substrate can be nanoimprinted. The material can be processed to transform it into a substantially solidified material. A magnetic material can be deposited on the substantially solidified material. | 08-28-2008 |
20090154027 | AP FREE LAYER CPP SENSOR WITH TOP APERTURE - Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density. | 06-18-2009 |
20090266790 | METHOD OF MAKING A MAGNETORESISTIVE READER STRUCTURE - A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor with a hard mask and photoresist. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack after the hard mask used to define the track width is removed. A separate chemical mechanical polishing (CMP) stop layer that is different from the hard mask enables subsequent creating of a planar surface via CMP to remove unwanted material on top of the sensor stack. | 10-29-2009 |
20100039849 | READ/WRITE ELEMENTS FOR A THREE-DIMENSIONAL MAGNETIC MEMORY - Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles. | 02-18-2010 |
20120105996 | THERMALLY ASSISTED MAGNETIC WRITE HEAD EMPLOYING A NEAR FIELD TRANSDUCER (NFT) HAVING A DIFFUSION BARRIER LAYER BETWEEN THE NEAR FIELD TRANSDUCER AND A MAGNETIC LIP - A thermally assisted magnetic write head having a near-field transducer, a magnetic lip and a diffusion barrier layer between the near-field tranducer and the magnetic lip. The near-field transducer includes a transparent aperture constructed of a material such as SiO | 05-03-2012 |
20140293472 | READ HEAD SENSOR WITH A TANTALUM OXIDE REFILL LAYER - In one embodiment, a method includes masking a sensor stack with a first mask, milling exposed regions of the sensor stack for defining a back edge of the sensor stack, forming a tantalum oxide layer along the back edge, removing the first mask, masking the sensor stack with a second mask, and milling exposed regions of the sensor stack for defining side edges of the sensor stack, a width of the sensor stack in a track width direction being defined between the side edges. In another embodiment a system includes a sensor stack of thin films having a back edge, and a tantalum oxide layer extending along the back edge. | 10-02-2014 |
Patent application number | Description | Published |
20080278860 | EXTRAORDINARY MAGNETORESISTIVE (EMR) DEVICE WITH NOVEL LEAD STRUCTURE - An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system. | 11-13-2008 |
20080316652 | SIMULTANEOUS POLE-TIP AND SIDE SHIELD FABRICATION AND INTEGRATED ELG - A method for manufacturing a write pole for perpendicular magnetic recording for accurately defining a side shield throat height and write pole flare point. The method includes the formation of a magnetic structure that provides an electronic lapping guide as well as providing the structure for both the side shields and the write pole. The magnetic structure includes a write pole portion and first and second side shield portions. The side shields portions are magnetically connected with the write pole portion in a region in front of an intended air hearing surface plane (e.g. in the direction from which lapping will progress). The side shields portions are each separated from the write pole portion in a region behind the intended air bearing surface plane by notches that terminate at a desired location relative to the intended air bearing surface plane and which open up in a region behind the intended air bearing surface plane. | 12-25-2008 |
20090190269 | SELF-ALIGNED COPLANAR STRUCTURE FOR NARROW-TRACK EMR DEVICES AND A METHOD FOR PRODUCING THE SAME - An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads. | 07-30-2009 |
20090258186 | WAFER-LEVEL METHOD FOR FABRICATING AN OPTICAL CHANNEL AND APERTURE STRUCTURE IN MAGNETIC RECORDING HEAD SLIDERS FOR USE IN THERMALLY-ASSISTED RECORDING (TAR) - A process for forming a plurality of sliders for use in thermally-assisted recording (TAR) disk drives includes a wafer-level process for forming a plurality of aperture structures, and optionally abutting optical channels, on a wafer surface prior to cutting the wafer into individual sliders. The wafer has a generally planar surface arranged into a plurality of rectangularly-shaped regions. In each rectangular region a first metal layer is deposited on the wafer surface, followed by a layer of radiation-transmissive aperture material, which is then lithographically patterned to define the width of the aperture, the aperture width being parallel to the length of the rectangularly-shaped region. A second metal layer is deposited over the patterned layer of aperture material. The resulting structure is then lithographically patterned to define an aperture structure comprising aperture material surrounded by metal and having parallel radiation entrance and exit faces orthogonal to the wafer surface. | 10-15-2009 |
20090297700 | METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSOR WITH A CONFINED-CURRENT-PATH (CCP) - A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer. | 12-03-2009 |
20100163521 | SYSTEM, METHOD AND APPARATUS FOR FABRICATING A C-APERTURE OR E-ANTENNA PLASMONIC NEAR FIELD SOURCE FOR THERMAL ASSISTED RECORDING APPLICATIONS - A method of fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications in hard disk drives is disclosed. A c-aperture or E-antenna is built for recording head applications. The technique employs e-beam lithography, partial reactive ion etching and metal refill to build the c-apertures. This process strategy has the advantage over other techniques in the self-alignment of the c-aperture notch to the c-aperture internal diameter, the small number of process steps required, and the precise and consistent shape of the c-aperture notch itself. | 07-01-2010 |
20110086440 | METHOD FOR MANUFACTURING AN EXTRAORDINARY MAGNETORESISTIVE (EMR) DEVICE WITH NOVEL LEAD STRUCTURE - A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system. | 04-14-2011 |
20120063035 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REFERENCE LAYER INTEGRATED IN MAGNETIC SHIELD - A current-perpendicular-to-the-plane magnetoresistive (CPP MR) sensor has a shield layers that also functions as the sensor's reference layer. In a CPP MR disk drive read head, the shield layer has a fixed magnetization oriented substantially parallel to the air-bearing surface (ABS) of the slider that supports the read head. The quiescent magnetization of the sensor free layer is oriented at an angle relative to the magnetization of the shield layer, preferably between 120 and 150 degrees, to optimize the sensor response to magnetic fields from the recorded data bits on the disk. The magnetization of the free layer is biased by a biasing structure that includes a ferromagnetic side biasing layer formed near the side edges of the free layer and a ferromagnetic back biasing layer that is recessed from the ABS and has a magnetization oriented generally orthogonal to the ABS. | 03-15-2012 |
20120070784 | SYSTEM, METHOD AND APPARATUS FOR FABRICATING A C-APERTURE OR E-ANTENNA PLASMONIC NEAR FIELD SOURCE FOR THERMAL ASSISTED RECORDING APPLICATIONS - A method of fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications in hard disk drives is disclosed. A c-aperture or E-antenna is built for recording head applications. The technique employs e-beam lithography, partial reactive ion etching and metal refill to build the c-apertures. This process strategy has the advantage over other techniques in the self-alignment of the c-aperture notch to the c-aperture internal diameter, the small number of process steps required, and the precise and consistent shape of the c-aperture notch itself. | 03-22-2012 |
20120307404 | THREE-TERMINAL SPIN-TORQUE OSCILLATOR (STO) - A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields. | 12-06-2012 |
20140291283 | METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REDUCED-WIDTH SELF-ALIGNED TOP ELECTRODE - A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor. | 10-02-2014 |
20140313617 | METHOD FOR MAKING A TUNNELING MAGNETORESISTIVE (TMR) SENSOR - A tunneling magnetoresistive sensor has an extended pinned layer wherein both the MgO spacer layer and the underlying ferromagnetic pinned layer extend beyond the back edge of the ferromagnetic free layer in the stripe height direction and optionally also beyond the side edges of the free layer in the trackwidth direction. A patterned photoresist layer with a back edge is formed on the sensor stack and a methanol (CH | 10-23-2014 |
20140340791 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH REDUCED-WIDTH TOP AND BOTTOM ELECTRODES AND METHOD FOR MAKING - A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth. | 11-20-2014 |