Patent application number | Description | Published |
20080258742 | Conductivity measurement device, its manufacture and use - The invention relates to a method of manufacturing a device for measuring conductivity of a liquid, in particular ultrapure water, of the kind comprising two conductivity measurement electrodes suitable for defining a cell constant enabling the measurement of the conductivity of the ultrapure liquid, characterized in that it consists of producing each of the electrodes by forming an electrode pattern from electrically conductive material on a substrate of insulating material. | 10-23-2008 |
20090315571 | Method and device for measuring the conductivity of a pure or ultrapure liquid - The invention relates to a method of measuring the conductivity of a pure or ultrapure liquid, notably water, using electrodes, characterized in that it consists in determining the conductivity by modeling the liquid in the form of an equivalent electrical circuit diagram comprising a resistor R, a capacitor Cp in parallel with the resistor R, and a series capacitor Cs. | 12-24-2009 |
20090319194 | Device for measuring the purity of ultrapure water - This is a device for analyzing the quantity of organic compounds existing in a liquid, such as ultrapure water, at the outlet from a purification device including in series filter means ( | 12-24-2009 |
20100072079 | Electrochemical method for detecting boron in water - The invention relates to a method for detecting the presence of boron in water comprising the production of a conductive buffer solution comprising water and at least one boron complexing agent, the introduction into an electrochemical cell of said solution in the presence of at least one work electrode ( | 03-25-2010 |
20100193377 | Electrochemical Detection of Silica Species - A systems and apparatus for measuring non-electroactive materials in liquids using electrochemical detection. A first electrical activity of a electroactive material is detected in absence of a target non-electroactive material (Step | 08-05-2010 |
20110068812 | Method And Device For Measuring The Purity Of Ultrapure Water - This is a method for analyzing the purity of water at the outlet from a purification device. It comprises the following steps: a) sending the liquid at the outlet from the filter means ( | 03-24-2011 |
20120061346 | Conductivity Measurement Device, Its Manufacture And Use - The invention relates to a method of manufacturing a device for measuring conductivity of a liquid, in particular ultrapure water, of the kind comprising two conductivity measurement electrodes suitable for defining a cell constant enabling the measurement of the conductivity of the ultrapure liquid, characterized in that it consists of producing each of the electrodes by forming an electrode pattern from electrically conductive material on a substrate of insulating material. | 03-15-2012 |
20120062243 | Conductivity Measurement Device, Its Manufacture And Use - The invention relates to a method of manufacturing a device for measuring conductivity of a liquid, in particular ultrapure water, of the kind comprising two conductivity measurement electrodes suitable for defining a cell constant enabling the measurement of the conductivity of the ultrapure liquid, characterized in that it consists of producing each of the electrodes by forming an electrode pattern from electrically conductive material on a substrate of insulating material. | 03-15-2012 |
20130269425 | Device For Measuring The Purity Of Ultrapure Water - This is a device for analyzing the quantity of organic compounds existing in a liquid, such as ultrapure water, at the outlet from a purification device including in series filter means ( | 10-17-2013 |
Patent application number | Description | Published |
20120028052 | GRAPHENE GROWTH ON A NON-HEXAGONAL LATTICE - A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry. | 02-02-2012 |
20120261644 | STRUCTURE AND METHOD OF MAKING GRAPHENE NANORIBBONS - Disclosed is a ribbon of graphene less than 3 nm wide, more preferably less than 1 nm wide. In a more preferred embodiment, there are multiple ribbons of graphene each with a width of one of the following dimensions: the length of 2 phenyl rings fused together, the length of 3 phenyl rings fused together, the length of 4 phenyl rings fused together, and the length of 5 phenyl rings fused together. In another preferred embodiment the edges of the ribbons are parallel to each other. In another preferred embodiment, the ribbons have at least one arm chair edge and may have wider widths. | 10-18-2012 |
20120318342 | UNIFORMLY DISTRIBUTED SELF-ASSEMBLED CONE-SHAPED PILLARS FOR HIGH EFFICIENCY SOLAR CELLS - A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device. | 12-20-2012 |
20120319078 | GRAPHENE GROWTH ON A NON-HEXAGONAL LATTICE - A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry. | 12-20-2012 |
20140124033 | UNIFORMLY DISTRIBUTED SELF-ASSEMBLED CONE-SHAPED PILLARS FOR HIGH EFFICIENCY SOLAR CELLS - A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device. | 05-08-2014 |
20140217356 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack. | 08-07-2014 |
20140220764 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline SiC substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline SiC layer. The semiconductor layer is transferred to a handle substrate, and the spreading layer is split to remove the single crystalline SiC substrate. | 08-07-2014 |
20140291606 | SOLUTION-ASSISTED CARBON NANOTUBE PLACEMENT WITH GRAPHENE ELECTRODES - A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween. | 10-02-2014 |
20150048312 | SOLUTION-ASSISTED CARBON NANOTUBE PLACEMENT WITH GRAPHENE ELECTRODES - A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween. | 02-19-2015 |
20150236147 | GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH - Silicon-carbon alloy structures can be formed as inverted U-shaped structures around semiconductor fins by a selective epitaxy process. A planarization dielectric layer is formed to fill gaps among the silicon-carbon alloy structures. After planarization, remaining vertical portions of the silicon-carbon alloy structures constitute silicon-carbon alloy fins, which can have sublithographic widths. The semiconductor fins may be replaced with replacement dielectric material fins. In one embodiment, employing a patterned mask layer, sidewalls of the silicon-carbon alloy fins can be removed around end portions of each silicon-carbon alloy fin. An anneal is performed to covert surface portions of the silicon-carbon alloy fins into graphene layers. In one embodiment, each graphene layer can include only a horizontal portion in a channel region, and include a horizontal portion and sidewall portions in source and drain regions. If a patterned mask layer is not employed, each graphene layer can include only a horizontal portion. | 08-20-2015 |
20150280023 | UNIFORMLY DISTRIBUTED SELF-ASSEMBLED CONE-SHAPED PILLARS FOR HIGH EFFICIENCY SOLAR CELLS - A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device. | 10-01-2015 |