Patent application number | Description | Published |
20080315248 | Semiconductor Device Having Igbt Cell and Diode Cell and Method for Designing the Same - A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first layer and the second and third layers. The first layer provides a drift layer of the IGBT cell and the diode cell. The second layer provides a collector layer of the IGBT cell. The third layer provides one electrode connection layer of the diode cell. A resistivity ρ | 12-25-2008 |
20090057832 | Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS - A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode. | 03-05-2009 |
20090072339 | Semiconductor device having diode and IGBT - A semiconductor device includes: a semiconductor substrate including a first conductive type layer; a plurality of IGBT regions, each of which provides an IGBT element; and a plurality of diode regions, each of which provides a diode element. The plurality of IGBT regions and the plurality of diode regions are alternately arranged in the substrate. Each diode region includes a Schottky contact region having a second conductive type. The Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer. The Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region. | 03-19-2009 |
20090108288 | Semiconductor device and method of manufacturing the same - A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section. | 04-30-2009 |
20090242931 | Semiconductor device having IGBT and diode - A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the active element cell area; a second semiconductor region on a second side of the substrate in the IGBT cell region; a third semiconductor region on the second side in the diode cell region; a fourth semiconductor region on the first side surrounding the active element cell area; a fifth semiconductor region on the first side surrounding the fourth semiconductor region; and a sixth semiconductor region on the second side below the fourth semiconductor region. The second semiconductor region, the third semiconductor region and the sixth semiconductor region are electrically coupled with each other. | 10-01-2009 |
20100090248 | Semiconductor device having IGBT and FWD on same substrate - A semiconductor device includes: a semiconductor substrate; an IGBT element including a collector region; a FWD element including a cathode region adjacent to the collector region; a base layer on the substrate; multiple trench gate structures including a gate electrode. The base layer is divided by the trench gate structures into multiple first and second regions. Each first region includes an emitter region contacting the gate electrode. Each first region together with the emitter region is electrically coupled with an emitter electrode. The first regions include collector side and cathode side first regions, and the second regions include collector side and cathode side second regions. At least a part of the cathode side second region is electrically coupled with the emitter electrode, and at least a part of the collector side second region has a floating potential. | 04-15-2010 |
20100156506 | Semiconductor device including insulated gate bipolar transistor and diode - A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions. | 06-24-2010 |
20100187567 | Semiconductor device - A semiconductor device includes a semiconductor substrate having a first surface and a second surface. A main region and a sensing region are formed on the first surface side of the semiconductor substrate. A RC-IGBT is formed in the main region and a sensing element for passing electric currents proportional to electric currents flowing through the RC-IGBT is formed in the sensing region. A collector region and a cathode region of the sensing element are formed on the second surface side of the semiconductor substrate. The collector region is located directly below the sensing region in a thickness direction of the semiconductor substrate. The cathode region is not located directly below the sensing region in the thickness direction. | 07-29-2010 |
20110193132 | INSULATED GATE SEMICONDUCTOR DEVICE - An insulated gate semiconductor device includes a semiconductor substrate, channel regions, floating regions, an emitter region, a body region, a hole stopper layer, and an emitter electrode. The channel regions and the floating regions are repeatedly arranged such that at least one floating region is located between adjacent channel regions. The emitter region and the body region are located in a surface portion of each channel region. The body region is deeper than the emitter region. The hole stopper layer is located in each floating region to divide the floating region into a first region and a second region. The emitter electrode is electrically connected to the emitter region and the first region. | 08-11-2011 |
20110260212 | SEMICONDUCTOR DEVICE - An insulated gate semiconductor device includes a semiconductor substrate, a drift layer on the substrate, a base layer on the drift layer, a ring-shaped gate trench dividing the base layer into a channel layer and a floating layer, an emitter region located in the channel layer to be in contact with a side surface of the gate trench, a well region located on the periphery of a cell area of the base layer and having a depth greater than a depth of the base layer, and a ring-shaped buffer trench located adjacent to and spaced from the gate trench in a length direction of the gate trench. An edge of the well region is located in an area enclosed by the buffer trench in the length direction of the gate trench. | 10-27-2011 |
20120025264 | SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN IGBT AND SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN DMOS - A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode. | 02-02-2012 |
20120056242 | SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR AND DIODE - A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions. | 03-08-2012 |
20120132954 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate with a first surface and a second surface. The semiconductor substrate has an element region including an IGBT region and a diode region located adjacent to the IGBT region. An IGBT element is formed in the IGBT region. A diode element is formed in the diode region. A heavily doped region of first conductivity type is located on the first surface side around the element region. An absorption region of first conductivity type is located on the second surface side around the element region. A third semiconductor region of second conductivity type is located on the second surface side around the element region. | 05-31-2012 |
20120146091 | INSULATED GATE SEMICONDUCTOR DEVICE - An insulated gate semiconductor device includes a first conductivity-type semiconductor substrate, a second conductivity-type base layer on a first surface side of the substrate, a trench dividing the base layer into channel and floating layers, and a first conductivity-type emitter region that is formed in the channel layer and in contact with the trench. The semiconductor device includes a gate insulation layer in the trench, a gate electrode on the insulation layer, an emitter electrode electrically connected to the emitter region and the floating layer, a second conductivity-type collector layer in the substrate, and a collector electrode on the collector layer. The floating layer has a lower impurity concentration than the channel layer. The floating layer has a first conductivity-type hole stopper layer located at a predetermined depth from the first surface of the substrate and at least partially spaced from the insulation layer. | 06-14-2012 |
20120319163 | SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR AND DIODE - A semiconductor device includes an IGBT forming region and a diode forming region. The IGBT forming region includes an IGBT operating section that operates as an IGBT and a thinned-out section that does not operate as an IGBT. The IGBT operating section includes a channel region, and the thinned-out section includes a first anode region. The diode forming region includes a second anode region. When an area density is defined as a value calculated by integrating a concentration profile of second conductivity type impurities in each of the channel region, the first anode region, and the second anode region in a depth direction, an area density of the channel region is higher than an area density of the first anode region and an area density of the second anode region. | 12-20-2012 |
20130009205 | SEMICONDUCTOR DEVICE - A semiconductor device has a first conductivity-type semiconductor substrate, second conductivity-type channel regions, and second conductivity-type thinning-out regions. The channel regions and the thinning-out regions are formed adjacent to a substrate surface of the semiconductor substrate. Further, a hole stopper layer is formed in each of the thinning-out regions to divide the thinning-out region into a first part adjacent to the substrate surface and a second part adjacent to a bottom of the thinning-out region. The hole stopper layer has an area density of equal to or less than 4.0×10 | 01-10-2013 |
20130087829 | SEMICONDUCTOR DEVICE - In a semiconductor device including an IGBT and a freewheeling diode (FWD), W | 04-11-2013 |
20130334567 | SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN IGBT AND SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN DMOS - A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode. | 12-19-2013 |
20140299915 | SEMICONDUCTOR DEVICE - In a semiconductor device having a vertical semiconductor element configured to pass an electric current between an upper electrode and a lower electrode, a field stop layer includes a phosphorus/arsenic layer doped with phosphorus or arsenic and a proton layer doped with proton. The phosphorus/arsenic layer is formed from a back side of a semiconductor substrate to a predetermined depth. The proton layer is deeper than the phosphorus/arsenic layer. An impurity concentration of the proton layer peaks inside the phosphorus/arsenic layer and gradually, continuously decreases at a depth greater than the phosphorus/arsenic layer. | 10-09-2014 |
20140361334 | SEMICONDUCTOR DEVICE - In a semiconductor device including an IGBT and a freewheeling diode W≧2×L1/K | 12-11-2014 |