Patent application number | Description | Published |
20080315179 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer. | 12-25-2008 |
20080315223 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device comprising a first conductive type semiconductor layer, an active layer, a semiconductor layer comprising Al, a high-concentration semiconductor layer, a low-mole In | 12-25-2008 |
20090057647 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer. | 03-05-2009 |
20090057691 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer. | 03-05-2009 |
20100155772 | Semiconductor light emitting device and method for manufacturing the same - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer. | 06-24-2010 |
20110101415 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer. | 05-05-2011 |
20110186812 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer. | 08-04-2011 |
20120119182 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer. | 05-17-2012 |
20120205664 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer. | 08-16-2012 |
20130228748 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant. | 09-05-2013 |
20140191190 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant. | 07-10-2014 |
20140191245 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other. | 07-10-2014 |
Patent application number | Description | Published |
20090240153 | Clutter Signal Filtering In An Ultrasound System - Embodiments for filtering clutter signals from receive signals obtained in a Doppler mode in an ultrasound system are disclosed. In one embodiment, the ultrasound system comprises a Tx/Rx unit, a signal processing unit and an input unit. The Tx/Rx unit transmits ultrasound signals to a target object and receives echoes reflected from the target object. The signal processing unit processes the received echoes to provide 2-dimensional image data of the target object, the 2-dimensional image data being representative of a 2-dimensional image. The input unit enables a user to set a region of interest (ROI) on the 2-dimensional image of the target object. The Tx/Rx unit and the signal processing unit are further configured to operate such that a Doppler mode image pixel data corresponding to the ROI is obtained. The signal processing unit is further configured to set filter cutoff frequencies based on characteristics of the Doppler mode image pixel data and filter the Doppler mode image pixel data with the set filter cutoff frequencies to output filtered pixel data with clutter signals filtered. | 09-24-2009 |
20100280384 | Clutter Signal Filtering Using Eigenvectors In An Ultrasound System - Embodiments for setting eigenvectors for clutter signal filtering from Doppler signals in an ultrasound system are disclosed. In one embodiment, the ultrasound system includes: a Doppler signal acquisition unit configured to transmit and receive ultrasound signals to and from a target object to acquire first Doppler signals; and a processing unit configured to compute a plurality of eigenvectors by using the first Doppler signals and form second Doppler signals corresponding to directions of the computed eigenvectors, the processing unit being further configured to compute component values of the second Doppler signals and set eigenvectors for clutter signal filtering among the plurality of eigenvectors by using the computed component values. | 11-04-2010 |
20100280386 | Ultrasound System And Method For Adaptively Performing Clutter Filtering - Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to thereby output a plurality of ultrasound data for obtaining a color Doppler mode image, wherein the target object includes at least one of a tissue and a blood flow; and a processing unit placed in communication with the ultrasound data acquisition unit and being configured to locate the plurality of ultrasound data on a complex plane, the processing unit being further configured to perform a circle fitting upon the plurality of ultrasound data located on the complex plane and perform a downmixing and a clutter filtering upon the circle-fitted ultrasound data in consideration of speed of the tissue. | 11-04-2010 |
20110018021 | LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME - Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; and | 01-27-2011 |
20110078580 | METHOD AND SYSTEM FOR PROVIDING INTERFACE OF WEB PAGE - The present invention relates a system for providing an interface of a web page. A system for providing an interface of a web page according to the present invention: a web server that generates pagelet information including a portion of web page providing information and when a terminal requests the transmission of the web page, transmits a web page including the pagelet information to the terminal; and a terminal that extracts a pagelet information from the web page to generate a pagelet and displays a pagelet capable of controlling a screen independent of the web page when the terminal requests the transmission of the web page to the web server and receives the web page from the web server. | 03-31-2011 |
20110118606 | ADAPTIVELY PERFORMING CLUTTER FILTERING IN AN ULTRASOUND SYSTEM - Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to output a plurality of ultrasound data corresponding to each pixel of a color Doppler mode image; and a processing unit in communication with the ultrasound data acquisition unit and being configured to calculate a power difference value corresponding to each of the pixels based on the plurality of ultrasound data, determine whether the power difference value is equal to or larger than a first threshold value, and if the power difference value is equal to or larger than the first threshold value, then perform first clutter filtering upon the plurality of ultrasound data, or if the power difference value is less than the first threshold value, then perform second clutter filtering upon the plurality of ultrasound data. | 05-19-2011 |
20110137174 | ULTRASOUND COLOR DOPPLER IMAGING SYSTEM AND METHOD FOR FILTERING CLUTTER SIGNAL OF THE SAME - Disclosed is an ultrasound color Doppler image system. The ultrasound color Doppler image system includes a calculation unit that calculates a mean value associated with an I/Q signal corresponding to a pixel of a color image in an ultrasound image and generates a multiplication value using the calculated mean value; a comparison unit that compares the generated multiplication value with the mean value; and a masking unit that performs masking of the pixel based on a comparison result, and, the calculation unit calculates the mean value of the I/Q signal for each frame, selects a reference mean value based on scales of the calculated mean values, and generates the multiplication value by multiplying the selected reference mean value and a scale factor. | 06-09-2011 |
20110275938 | ULTRASOUND IMAGING DEVICE AND METHOD FOR CLUTTER FILTERING - An ultrasound imaging device according to exemplary embodiments of the present invention may determine a skewness with respect to an in-phase/quadrature-phase (I/Q) signal in a frequency domain, and may provide a decision logic of a clutter filtering using the skewness. Accordingly, by filtering a clutter signal of the I/Q signal according to the skewness of the I/Q signal, an ultrasonic image may be formed using a signal in which a clutter component is filtered and/or submatrices in which a Doppler component is dominant, and the formed ultrasonic image may be provided to a user. | 11-10-2011 |
20120022372 | ULTRASOUND IMAGING DEVICE AND METHOD FOR CLUTTER FILTERING - An ultrasound imaging device and method for clutter filtering is provided. The ultrasound imaging device provides logic for calculating signal characteristic values from an in-phase/quadrature-phase (I/Q) of an ultrasound signal reflected from an object and determining to remove a clutter element from the I/Q signal through comparison of the calculated signal characteristic values. Accordingly, the ultrasound imaging device provides a blood flow distribution of the object, more precisely visualized, to a user. | 01-26-2012 |
20120165665 | METHOD FOR PROVIDING MECHANICAL INDEX MAP AND/OR PRESSURE MAP BASED ON DEPTH VALUE AND DIAGNOSTIC ULTRASOUND SYSTEM USING THE METHOD - A diagnostic ultrasound system may visualize and display a mechanical index (MI) as a map. The diagnostic ultrasound system may include a calculating unit to calculate an MI at a depth value on an ultrasonic direction axis from an ultrasonic output unit of an ultrasonic transducer, a visualizing unit to visualize a relationship between the calculated MI and the corresponding depth value in the form of a graph to generate an MI map, and a display unit to display the MI map. | 06-28-2012 |
20120184849 | METHOD OF OPERATING ULTRASOUND DIAGNOSIS APPARATUS FOR PROVIDING MAP OF INTEREST INDEX AND ULTRASOUND DIAGNOSIS APPARATUS USING THE METHOD - An ultrasound diagnosis apparatus providing a map of an interest index. The ultrasound diagnosis apparatus includes: a calculating unit for calculating a mechanical index (MI) corresponding to a depth value in a direction in which ultrasound travels from an ultrasound output part of a transmission transducer; a visualization unit for generating an MI map in which a relationship between the calculated MI and the depth value is visualized in the form of a graph; and a display unit for displaying the MI map. | 07-19-2012 |
20120197122 | ULTRASONIC DIAGNOSIS APPARATUS AND METHOD OF CONTROLLING OUTPUT OF ULTRASONIC DIAGNOSIS APPARATUS - Provided is a method of controlling voltage levels of overall outputs in a combinational mode, in an ultrasonic diagnosis apparatus that may operate in the combinational mode. A judging unit of the ultrasonic diagnosis apparatus may judge whether at least a part of individual modes included in the combinational mode exceeds a threshold determined by safety standards, in accordance with an inputted overall output voltage level control command. When it is judged that at least the part of the individual modes exceeds the threshold determined by the safety standards, an output control unit may maintain an individual output with respect to the at least the part, among the voltage levels that may be outputted from a transducer, to be below the threshold, so that the individual output may be below the standards in accordance with the overall output control command. | 08-02-2012 |
Patent application number | Description | Published |
20080258151 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein at least two of the Un-GaN layers and at least two of the N-type semiconductor layers are alternatively stacked on each other. | 10-23-2008 |
20110163324 | LIGHT EMITTING DEVICE - A light emitting diode of one embodiment includes a light emitting device having a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on an upper layer of the plurality of N-type semiconductor layers, and a P-type semiconductor layer on the active layer. The first N-type semiconductor layer includes a first Si doped Nitride layer and the second N-type semiconductor layer includes a second Si doped Nitride layer. The first and second N-type semiconductor layers have a Si impurity concentration different from each other. | 07-07-2011 |
20120313110 | LIGHT EMITTING DEVICE - Disclosed are a light emitting device. A light emitting diode comprises a light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other. | 12-13-2012 |