Patent application number | Description | Published |
20080315180 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a quantum barrier layer and a quantum well layer on the first conductive type semiconductor layer. An indium (In) composition ratio of the quantum well layer is changed in a graded manner. The second conductive type semiconductor layer is disposed on the active layer. | 12-25-2008 |
20080315222 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a substrate, a mask seed layer formed on the substrate and comprising a TI group element, a nitride layer formed on the mask seed layer and comprising a III group element, a first conductive semiconductor layer on the nitride layer, an active layer on the first conductive layer, and a second conducive semiconductor layer on the active layer. | 12-25-2008 |
20080315225 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer. | 12-25-2008 |
20080318426 | WAFER RECYCLING METHOD - A wafer recycling method comprises varying a temperature and pressure conditions to remove a first semiconductor layer deposited on a wafer, removing a remaining semiconductor layer on the wafer through a chemical or physical process, and washing the wafer. | 12-25-2008 |
20090026490 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a light emitting device. The light emitting device comprises a second electrode layer, a second conduction type semiconductor layer, an active layer, a first conduction type semiconductor layer, a first electrode layer, and an insulating layer. The second conduction type semiconductor layer is formed on the second electrode layer. The active layer is formed on the second conduction type semiconductor layer. The first conduction type semiconductor layer is formed on the active layer. The first electrode layer is formed on the first conduction type semiconductor layer. The insulating layer is disposed between the second electrode layer and the second conduction type semiconductor layer. | 01-29-2009 |
20090039362 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure that is curved to protrude on the substrate and comprises an active layer. | 02-12-2009 |
20090039370 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure that is curved to protrude on the substrate and comprises an active layer. | 02-12-2009 |
20090039371 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME - A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer. | 02-12-2009 |
20090090901 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer. | 04-09-2009 |
20100128199 | LIGHT EMITTING APPARATUS AND DISPLAY APPARATUS USING THE SAME - A light emitting apparatus including a first light emitting device including a first light emitting diode chip configured to emit light of a first rank included in a first color gamut, and a second light emitting device including a second light emitting diode chip configured to emit light of a second rank included in the first color gamut, in which the first rank is different than the second rank. In addition, the first and second light emitting devices are arranged in relation to each other such that the light emitted by the first emitting device mixes with light emitted by the second light emitting device to form light of a third rank different than the first and second ranks. | 05-27-2010 |
20110006283 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer. | 01-13-2011 |
20110095264 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer. | 04-28-2011 |
20110163342 | LIGHT EMITTING DEVICE - A light emitting device including a second metal layer, a second conduction type semiconductor layer on the second metal layer, an active layer on the second conduction type semiconductor layer, a first conduction type semiconductor layer on the active layer, a first metal layer on the first conduction type semiconductor layer, an insulating layer being disposed on a peripheral portion of an upper surface of the second metal layer and being disposed under a lower surface of the second conduction type semiconductor layer, and a passivation layer on lateral surfaces of the insulating layer, the second conduction type semiconductor layer, the active layer and the first conduction type semiconductor layer, the passivation layer being on an upper surface of the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer. | 07-07-2011 |
20110233518 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of Al | 09-29-2011 |
20120007128 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME - A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a second electrode electrically connected to the second conductive type semiconductor layer, a plurality of first electrodes disposed on a plurality of sidewalls of the first conductive type semiconductor layer, and wherein the plurality of first electrodes are spaced apart from each other. | 01-12-2012 |
20120205622 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer. | 08-16-2012 |
20130087765 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of Al | 04-11-2013 |
20130228816 | Light Emitting Device - A light emitting device includes a second metal layer, a second semiconductor layer on the second metal layer, an active layer on the second semiconductor layer, a first semiconductor layer on the active layer, a first metal layer on the first semiconductor layer, an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer, and a passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, and wherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer. | 09-05-2013 |
20140048820 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first and second conductive semiconductor layers including an n-type dopant on active layer; a third and fourth conductive semiconductor layers including a p-type dopant under the active layer; wherein the first to fourth conductive semiconductor layers are formed of an AlGaN-based semiconductor, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers, wherein the plurality of quantum well layers include an InGaN semiconductor layer, wherein the plurality of quantum barrier layers include an AlGaN-based semiconductor layer, wherein at least two of the plurality barrier layers have a thickness of about 50 Å to about 300 Å, respectively, wherein a cycle of the quantum barrier layer and the quantum well layer includes a cycle of 2 to 10, wherein the second conductive semiconductor layer has a thickness thinner than a thickness of the third conductive semiconductor layer. | 02-20-2014 |
20140203241 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 Å to about 300 Å. | 07-24-2014 |