Patent application number | Description | Published |
20080315095 | Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method - An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam. | 12-25-2008 |
20090101816 | Testing apparatus using charged particles and device manufacturing method using the testing apparatus - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 04-23-2009 |
20100237243 | Testing apparatus using charged particles and device manufacturing method using the testing apparatus - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 09-23-2010 |
20140158885 | TESTING APPARATUS USING CHARGED PARTICLES AND DEVICE MANUFACTURING METHOD USING THE TESTING APPARATUS - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 06-12-2014 |
Patent application number | Description | Published |
20080315090 | Objective lens, electron beam system and method of inspecting defect - An electron beam system or a method for manufacturing a device using the electron beam system in which an electron beam can be irradiated at a high current density and a ratio of transmittance of a secondary electron beam of an image projecting optical system can be improved and which can be compact in size. The surface of the sample S is divided into plural stripe regions which in turn are divided into rectangle-shaped main fields. The main field is further divided into plural square-shaped subfields. The irradiation with the electron beams and the formation of a two-dimensional image are repeated in a unit of the subfields. A magnetic gap formed by the inner and outer magnetic poles of the objective lens is formed on the side of the sample, and an outer side surface and an inner side surface of each of the inner magnetic pole and the outer magnetic pole, respectively, forming the magnetic gap have each part of a conical shape with a convex having an angle of 45° or greater with respect to the optical axis. | 12-25-2008 |
20100019149 | MAPPING-PROJECTION-TYPE ELECTRON BEAM APPARATUS FOR INSPECTING SAMPLE BY USING ELECTRONS EMITTED FROM THE SAMPLE - An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface. | 01-28-2010 |
20130032716 | ELECTRON BEAM APPARATUS AND A DEVICE MANUFACTURING METHOD BY USING SAID ELECTRON BEAM APPARATUS - An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction. | 02-07-2013 |
20140319346 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 10-30-2014 |
20140367570 | SUBSTRATE INSPECTION METHOD AND A SUBSTRATE PROCESSING METHOD - There is provided a substrate inspection method. The method includes: maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; positioning the substrate on a stage in the inspection chamber; selecting an evaluation parameter according to a kind of said processing apparatus; and determining inspection regions of the substrate so that an inspection time required per a lot of the substrate is equal to a processing time spent for said processing step required per a lot of the substrate. The method also includes radiating a primary electron beam from an electron gun; deflecting the primary electron beam with an E*B unit; irradiating said inspection regions of the substrate with the deflected primary electron beam; and projecting secondary electrons emitted from said substrate through the E*B unit onto a detector with a secondary optical system. | 12-18-2014 |