Patent application number | Description | Published |
20080314868 | METHODS OF FORMING SEMICONDUCTOR DEVICES FORMED BY PROCESSES INCLUDING THE USE OF SPECIFIC ETCHANT SOLUTIONS - The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed. | 12-25-2008 |
20090023265 | ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R | 01-22-2009 |
20090155719 | Aromatic (meth)acrylate compound having an alpha-hydroxy, photosensitive polymer, resist compositions, and associated methods - An aromatic (meth)acrylate compound having an α-hydroxy, the aromatic (meth)acrylate compound being represented by the following Formula 1: | 06-18-2009 |
20090155720 | Photosensitive polymer, resist composition, and associated methods - A photosensitive polymer, the photosensitive polymer including repeating units represented by Formulae 1 to 3: | 06-18-2009 |
20090170029 | (Meth)acrylate compound having aromatic acid labile group, photosensitive polymer, resist composition, and associated methods - A (meth)acrylate compound having an aromatic acid-labile group, the (meth)acrylate compound being represented by the following Formula 1: | 07-02-2009 |
20100019292 | Transistor having a metal nitride layer pattern, etchant and methods of forming the same - A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor. | 01-28-2010 |
20100233620 | Copolymer and photoresist composition including the same - A resist copolymer includes a repeating unit having the following Chemical Formula 1, a repeating unit having the following Chemical Formula 2, and a repeating unit having the following Chemical Formula 3: | 09-16-2010 |
20100239982 | Photoresist composition with high etching resistance - A resist composition includes a first polymer including a repeating unit having the following Chemical Formula 1 and a repeating unit having the following Chemical Formula 2, a second polymer including a repeating unit having the following Chemical Formula 3, a repeating unit having the following Chemical Formula 4, and a repeating unit having the following Chemical Formula 5, a photoacid generator, and a solvent. | 09-23-2010 |
20110111748 | DISTRIBUTED MOBILE PHONE SYSTEM - A mobile phone system having an application processing function is physically separated into a network data processing device and an application data processing device. Here, the network data processing device configured to process data for voice calls and data calls is placed in one small and light-weight device, the application data processing device configured to perform a high-quality user interface and high-quality applications is placed in another device, and communication between the two devices is defined. | 05-12-2011 |