Patent application number | Description | Published |
20080271779 | Fine Grained, Non Banded, Refractory Metal Sputtering Targets with a Uniformly Random Crystallographic Orientation, Method for Making Such Film, and Thin Film Based Devices and Products Made Therefrom - The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target. | 11-06-2008 |
20090186230 | REFRACTORY METAL-DOPED SPUTTERING TARGETS, THIN FILMS PREPARED THEREWITH AND ELECTRONIC DEVICE ELEMENTS CONTAINING SUCH FILMS - Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6% by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films. | 07-23-2009 |
20120189483 | Methods of forming molybdenum sputtering targets - In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet. | 07-26-2012 |
20120251714 | FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THEREFROM - In various embodiments, sputtering targets are refurbished by spray-depositing a powder within a furrow in the sputtering target to form a layer therein. | 10-04-2012 |
20130337159 | METHODS OF REJUVENATING SPUTTERING TARGETS - In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material. | 12-19-2013 |
Patent application number | Description | Published |
20080314737 | Methods of Making Molybdenium Titanium Sputtering Plates and Targets - Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided. | 12-25-2008 |
20090065747 | TIN OXIDE-BASED SPUTTERING TARGET, LOW RESISTIVITY, TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SUCH FILM AND COMPOSITION FOR USE THEREIN - The present invention is directed to a composition consisting essentially of:
| 03-12-2009 |
20100272889 | PROCESS FOR PREPARING METAL POWDERS HAVING LOW OXYGEN CONTENT, POWDERS SO-PRODUCED AND USES THEREOF - The present invention is directed to a process for the preparation of a metal powder having a purity at least as high as the starting powder and having an oxygen content of 10 ppm or less comprising heating said metal powder containing oxygen in the form of an oxide, with the total oxygen content being from 50 to 3000 ppmf in an inert atmosphere at a pressure of from 1 bar to 10 | 10-28-2010 |
20130224059 | METHODS OF FORMING MOLYBDENUM SPUTTERING TARGETS - In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet. | 08-29-2013 |
20140299466 | HIGH-DENSITY METALLIC SPUTTERING TARGETS - The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced. | 10-09-2014 |