Patent application number | Description | Published |
20080206414 | PRESERVATIVE METHOD - A method for producing a microbiologically stable and safe food composition is described The method includes the step of mixing a food composition comprising an anionic polymer with a saturated preservative having an overall positive charge, whereby the saturated preservative is added in the last mixing step, in order to produce a food composition free of spoilage and pathogens. | 08-28-2008 |
20100068359 | PRESERVATIVE METHOD - A method for preserving a food dressing composition is described. The method includes replacement of sodium chloride with potassium chloride or ammonium chloride in order to produce a food dressing composition free of spoilage and pathogens. | 03-18-2010 |
20120167774 | Device - An improved brewing basket, and receptacles for receiving the basket, collectively forming an improved brewing apparatus. A siphon is received within the receptacle aperture and is covered by a shroud depending from the floor of the basket. The basket is elevated with respect to the receptacle, preferably supported predominantly by the siphon. The apparatus of the invention is quite flexible, and by permitting use of a single basket for loose and filter pack teas, the complexity of manufacturing and sales is reduced. Other advantageous features include a stainless steel insert to assist in containing the siphon within the shroud, retaining tabs within the shroud to help secure the siphon, and one or more, preferably three or more, protrusions extending upwardly from the floor of the basket to assist in keeping any infusion bags from lying flat on the floor of the basket, and thereby to promote infusion. Preferably, the shroud is integral with the basket floor and extends both above and below the floor. | 07-05-2012 |
Patent application number | Description | Published |
20090121324 | ETCH WITH STRIATION CONTROL - A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed. | 05-14-2009 |
20090311871 | ORGANIC ARC ETCH SELECTIVE FOR IMMERSION PHOTORESIST - A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched. | 12-17-2009 |
20100068885 | SIDEWALL FORMING PROCESSES - An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask. | 03-18-2010 |
20100148317 | CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL - A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer. | 06-17-2010 |
20120043021 | ADJUSTABLE CONFINEMENT RING ASSEMBLY - A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of confinement rings is separated by a space. A plunger moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is provided and coupled to the plunger. The proportional adjustment support is configured to move the confinement rings to one or more positions, such that the plunger is settable in positions along the plane. The positions define the space separating confinement rings, and the space is proportionally set between the confinement rings. The proportional adjustment support is defined by a plurality of support legs, and each of the support legs is pivotably interconnected with at least one other support leg. | 02-23-2012 |
20120309201 | CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL - A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer. | 12-06-2012 |