Patent application number | Description | Published |
20080224558 | INTERIOR PERMANENT MAGNET MOTOR INCLUDING ROTOR WITH FLUX BARRIERS - An electric machine includes a stator, and a rotor positioned adjacent the stator and configured to rotate with respect to the stator. The rotor includes a plurality of laminations having an outside diameter and stacked in a stackwise direction. Each lamination includes a plurality of non-linear slots positioned inward of the outside diameter. Each non-linear slot includes an inner portion spaced a first distance from the outside diameter and two end portions disposed a second distance from the outside diameter. The second distance is smaller than the first distance. The rotor also includes a plurality of permanent magnets. Each magnet is disposed in one of the non-linear slots. | 09-18-2008 |
20080272667 | INTERIOR PERMANENT MAGNET MOTOR AND ROTOR - An electric machine includes a stator and a rotor core positioned adjacent the stator and rotatable about a longitudinal axis. The rotor core includes a plurality of bar apertures, a plurality of elongated flux barriers separate from the bar apertures and positioned radially inward of the bar apertures, and a plurality of magnet slots separate from the bar slots and positioned radially inward of a portion of the bar apertures. The electric machine also includes a plurality of magnets, each positioned in one of the magnet slots. A plurality of conductive bars are each positioned in one of the bar apertures and includes a first end and a second end. A first end ring is coupled to the first end of each of the bars and a second end ring is coupled to the second end of each of the bars. | 11-06-2008 |
20080303369 | ELECTRIC MOTOR, STATOR FOR AN ELECTRIC MOTOR AND METHOD OF MANUFACTURING SAME - An electric machine has a rotor and includes a first portion that is substantially rectangular and includes a rotor aperture configured to receive a portion of the rotor. A second portion is separate from and connected to the first portion. The second portion is substantially U-shaped and includes a first leg, a second leg, and a base. A first coil surrounds a portion of the first leg and a second coil surrounds a portion of the second leg. | 12-11-2008 |
20090085415 | STATOR ASSEMBLY FOR AN ELECTRIC MACHINE AND METHOD OF MANUFACTURING THE SAME - A stator for an electric machine includes a plurality of core segments interconnected with one another. At least one core segment includes a plurality of teeth and a back portion that at least partially interconnects the teeth. A first one-piece mold defines a first end insulator portion and a plurality of slot insulator portions, and a second one-piece mold defines a second end insulator portion and a second plurality of slot insulator portions. The plurality of core segments is positioned between the first mold and the second mold such that the molds align and insulate the core portions. The stator also includes a plurality of coils. Each coil surrounds at least a portion of one tooth. | 04-02-2009 |
20100026128 | INTERIOR PERMANENT MAGNET MOTOR INCLUDING ROTOR WITH UNEQUAL POLES - An electric machine includes a stator and a rotor core including a first rotor portion positioned adjacent the stator and having an outside diameter. The first rotor portion includes a plurality of elongated slots that define a plurality of poles. The electric machine also includes a plurality of magnets. Each of the plurality of magnets is positioned within one of the slots and arranged such that each of the plurality of poles has a magnetic arc length that is different than a magnetic arc length of any adjacent pole. | 02-04-2010 |
20140232227 | MAGNETIC TRANSMISSION - An electromagnetic transmission assembly. The electromagnetic transmission assembly includes a stator having a central axis and a plurality of selectively-energized electromagnetic poles. A first rotor assembly is rotatably supported for rotation about the central axis. The first rotor assembly including a first rotor shaft and a castellated rotor including a plurality of radially arranged ferromagnetic pole portions disposed in a housing. A second rotor assembly is rotatably supported for rotation about the central axis. The second rotor assembly includes a second rotor shaft and a permanent-magnet rotor. The first rotor assembly is at least partially magnetically coupled to the second rotor assembly when the plurality of electromagnetic poles are energized. | 08-21-2014 |
Patent application number | Description | Published |
20080313905 | HEAT EXCHANGER WITH ENHANCED AIR DISTRIBUTION - A complete refrigeration system (CRS) including at least one heat exchanger which is designed to occupy an irregular volume to reduce the overall profile of the CRS. The heat exchanger may be a condenser or an evaporator, and includes a substantially solid body made of a thermally conductive metal, plastic, or other material. A plurality of fluid and refrigerant passageways are defined substantially within the solid body for conducing fluid and refrigerant, respectively, through the solid body and facilitating the transfer of heat between the fluid and refrigerant. Also disclosed is a method wherein the spatial orientation of each passageway is optimized with respect to all of the other passageways and the walls of the solid body by determining the relative distance of each passageway from all of the other passageways and the walls of the solid body at a plurality of points along each passageway, followed by adjusting the spatial orientation of the passageway accordingly. | 12-25-2008 |
20090301109 | METHOD AND APPARATUS FOR CONTROL OF CARBON DIOXIDE GAS COOLER PRESSURE BY USE OF A TWO-STAGE COMPRESSOR - A transcritical vapor compression system includes a fluid circuit circulating a refrigerant in a closed loop. The fluid circuit has operably disposed therein, in serial order, a first compressor, an intercooler, a second compressor with a variable capacity, a first heat exchanger, an expansion device and a second heat exchanger. The first compressor compresses the refrigerant from a low pressure to an intermediate pressure. The second compressor compresses the refrigerant from the intermediate pressure to a supercritical pressure. The first heat exchanger is positioned in a high pressure side of the fluid circuit. The second heat exchanger is positioned in a low pressure side of the fluid circuit. The expansion device reduces the pressure of the refrigerant from a supercritical pressure to a relatively lower pressure. Cooling means cools the refrigerant within one of the compressors. | 12-10-2009 |
20110119916 | METHOD OF MAKING A REFRIGERATION SYSTEM HAVING A HEAT EXCHANGER - A complete refrigeration system (CRS) including at least one heat exchanger which is designed to occupy an irregular volume to reduce the overall profile of the CRS. The heat exchanger may be a condenser or an evaporator, and includes a substantially solid body made of a thermally conductive metal, plastic, or other material. A plurality of fluid and refrigerant passageways are defined substantially within the solid body for conducing fluid and refrigerant, respectively, through the solid body and facilitating the transfer of heat between the fluid and refrigerant. Also disclosed is a method wherein the spatial orientation of each passageway is optimized with respect to all of the other passageways and the walls of the solid body by determining the relative distance of each passageway from all of the other passageways and the walls of the solid body at a plurality of points along each passageway, followed by adjusting the spatial orientation of the passageway accordingly. | 05-26-2011 |
Patent application number | Description | Published |
20160124847 | SCHEDULED GARBAGE COLLECTION FOR SOLID STATE STORAGE DEVICES - A processing device identifies a plurality of solid state storage devices arranged in an array and determines, for at least one solid state storage device of the plurality of solid state storage devices, a first time window during which the at least one solid state storage device is permitted to perform one or more garbage collection operations. The processing device then sends, to the at least one solid state storage device, a message comprising the first time window allocated to the at least one storage device, wherein the at least one solid state storage device is to perform the garbage collection operations during the first time window allocated to the at least one solid state storage device. | 05-05-2016 |
20160127468 | VIRTUAL NON-VOLATILE MEMORY EXPRESS DRIVE - A processing device receives an input/output (I/O) command generated by a process, the I/O command directed to a virtual storage provided to a host executing the process, wherein the virtual storage comprises a virtual non-volatile memory express (NVMe) drive. The processing device generates a new I/O command based on the received I/O command and encapsulates the new I/O command into a message. The processing device sends the message to at least one of a remote NVMe storage device or a storage server comprising one or more remote NVMe storage devices. | 05-05-2016 |
20160127492 | NON-VOLATILE MEMORY EXPRESS OVER ETHERNET - A processing device receives a message encapsulating an input/output (I/O) command from a remote computing device. The processing device identifies one or more physical storage devices to be accessed to satisfy the I/O command. The processing device then sends, to each physical storage device of the one or more physical storage devices, one or more non-volatile memory express (NVMe) commands directed to that physical storage device. | 05-05-2016 |
Patent application number | Description | Published |
20150108616 | MULTI-HEIGHT MULTI-COMPOSITION SEMICONDUCTOR FINS - A dielectric material layer is formed on a semiconductor-on-insulator (SOI) substrate including a top semiconductor layer containing a first semiconductor material. An opening is formed within the dielectric material layer, and a trench is formed in the top semiconductor layer within the area of the opening by an etch. A second semiconductor material is deposited to a height above the top surface of the top semiconductor layer employing a selective epitaxy process. Another dielectric material layer can be deposited, and another trench can be formed in the top semiconductor layer. Another semiconductor material can be deposited to a different height employing another selective epitaxy process. The various semiconductor material portions can be patterned to form semiconductor fins having different heights and/or different compositions. | 04-23-2015 |
20150162336 | SELF-ALIGNED LATERALLY EXTENDED STRAP FOR A DYNAMIC RANDOM ACCESS MEMORY CELL - A self-aligned strap structure can be formed by forming trench capacitors and overlying trench top conductive material portions. End portions of fin mask structures overlie portions of the trench top conductive material portions. A dielectric spacer is formed around each end portions of the fin mask structure to cover additional areas of the trench top conductive material portions. An anisotropic etch is performed to recess portions of the trench top conductive material portions that are not covered by the fin mask structures or dielectric spacers. Conductive strap structures that are self-aligned to end portions of semiconductor fins are formed simultaneously with formation of the semiconductor fins. Access fin field effect transistors can be subsequently formed. | 06-11-2015 |
20150279958 | CONSTRAINED EPITAXIAL SOURCE/DRAIN REGIONS ON SEMICONDUCTOR-ON-INSULATOR FINFET DEVICE - A method of fabricating a semiconductor device includes forming a plurality of semiconductor fins on an insulator layer of a semiconductor substrate, and forming a plurality of gate stacks on the insulator layer. Each gate stack wraps around a respective portion of the semiconductor fins. The method further includes forming a dielectric layer on the insulator layer. The dielectric layer fills voids between the semiconductor fins and gate stacks, and covers the semiconductor fins. The method further includes etching at least one portion of the semiconductor fins until reaching the insulator layer such that at least one cavity is formed. The cavity exposes seed regions of the semiconductor fins located between adjacent gate stacks. The method further includes epitaxially growing a semiconductor material from the seed regions to form source/drain regions corresponding to a respective gate stack. | 10-01-2015 |
20150333087 | MULTI-HEIGHT MULTI-COMPOSITION SEMICONDUCTOR FINS - A dielectric material layer is formed on a semiconductor-on-insulator (SOI) substrate including a top semiconductor layer containing a first semiconductor material. An opening is formed within the dielectric material layer, and a trench is formed in the top semiconductor layer within the area of the opening by an etch. A second semiconductor material is deposited to a height above the top surface of the top semiconductor layer employing a selective epitaxy process. Another dielectric material layer can be deposited, and another trench can be formed in the top semiconductor layer. Another semiconductor material can be deposited to a different height employing another selective epitaxy process. The various semiconductor material portions can be patterned to form semiconductor fins having different heights and/or different compositions. | 11-19-2015 |
20150357412 | CONSTRAINED EPITAXIAL SOURCE/DRAIN REGIONS ON SEMICONDUCTOR-ON-INSULATOR FINFET DEVICE - A method of fabricating a semiconductor device includes forming a plurality of semiconductor fins on an insulator layer of a semiconductor substrate, and forming a plurality of gate stacks on the insulator layer. Each gate stack wraps around a respective portion of the semiconductor fins. The method further includes forming a dielectric layer on the insulator layer. The dielectric layer fills voids between the semiconductor fins and gate stacks, and covers the semiconductor fins. The method further includes etching at least one portion of the semiconductor fins until reaching the insulator layer such that at least one cavity is formed. The cavity exposes seed regions of the semiconductor fins located between adjacent gate stacks. The method further includes epitaxially growing a semiconductor material from the seed regions to form source/drain regions corresponding to a respective gate stack. | 12-10-2015 |
20160043082 | FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION - A method includes forming a plurality of fins on a substrate, conformally depositing a nitride liner above and in direct contact with the plurality of fins and the substrate, removing a top portion of the nitride liner above the plurality of fins to expose a top surface of the plurality of fins, forming a gate over a first portion of the plurality of fins, a second portion of the plurality of fins remains exposed, forming spacers on opposite sidewalls of the nitride liner on the second portion of the plurality of fins, removing the second portion of the plurality of fins to form a trench between opposing sidewalls of the nitride liner, and forming an epitaxial layer in the trench, the lateral growth of the epitaxial layer is constrained by the nitride liner to form constrained source-drain regions. | 02-11-2016 |