Patent application number | Description | Published |
20110292253 | Image forming optical system and image pickup apparatus equipped with same - An optical system including five lens units having, in order from the object side, positive, negative, positive, negative, positive refracting powers respectively. The distances between the lens units change during zooming. The first and third lens units are located closer to the object side at the telephoto end than at the wide angle end of the zoom range. The first lens unit includes a negative lens, a first positive lens, and a second positive lens. The second lens unit includes a plurality of negative lenses and at least one positive lens. The third lens unit includes a plurality of positive lenses and at least one negative lens. The fourth and fifth lens units each include two lenses or less. The refractive indices of the at least one negative lens in the first lens unit, the at least one positive lens in the second lens unit, and the at least one negative lens in the third lens unit are not lower than 1.9. The optical system satisfies a certain condition. | 12-01-2011 |
20120300096 | Zoom Lens and Image Pickup Apparatus Using the Same - A zoom lens comprises in order from an object side, a first lens unit, a second lens unit, a third lens unit, a fourth lens unit, and a fifth lens unit having, respectively, a positive, negative, positive, negative, and positive refractive power. At the time of zooming from a wide angle end to a telephoto end, the first, third, and fourth lens units move toward the object side. A distance between the first and second lens units increase, a distance between the second and third lens units decrease, a distance between the third lens unit and the fourth lens unit changes, and a distance between the fourth lens unit and the fifth lens unit increases. The zoom lens satisfies the following expressions: | 11-29-2012 |
20130215294 | Zoom Lens and Image Pickup Apparatus Using the Same - A zoom lens comprises a first lens unit G | 08-22-2013 |
20130242409 | Zoom Lens Unit and Imaging Apparatus Incorporating the Same - A zoom lens unit | 09-19-2013 |
20140268365 | Zoom Lens and Image Pickup Apparatus Equipped with Same - A zoom lens consists of, in order from the object side, a first lens unit having a positive refractive power, a second lens unit having a negative refractive power, a third lens unit having a positive refractive power, a fourth lens unit having a negative refractive power, and a fifth lens unit having a positive refractive power. The first lens unit and the second lens unit move during zooming from the wide angle end to the telephoto end. The zoom lens satisfies the following conditional expressions (1), (2), and (3): | 09-18-2014 |
20150092282 | LENS BARREL AND ELECTRONIC APPARATUS - A lens barrel of the present invention is a lens barrel holding a photographing optical system which is a zoom lens constituted by five groups and includes: a cylindrical cam barrel arranged to be rotatable around an optical axis; a first lens driving section driving the cam barrel around the optical axis; a plurality of first cam grooves carved on an outer circumferential surface of the cam barrel; and a plurality of second cam grooves carved on an inner circumferential surface of the cam barrel. A first lens group holding barrel has a plurality of cam followers that are recessed in the first cam grooves; and each of a second lens group holding barrel and a third lens group holding barrel has a plurality of cam followers that are recessed in the second cam grooves. | 04-02-2015 |
20150130970 | Zoom Lens and Image Pickup Apparatus Using the Same - A zoom lens comprises a first lens unit G1 having a positive refractive power, a second lens unit G2 having a negative refractive power, and a plurality of lens units G3 and G4. Zooming from a wide angle end to a telephoto end is carried out by changing a distance between the lens units. One of the first lens unit G1 and the second lens unit G2 has, or both the first lens unit G1 and the second lens unit G2 have a specific arrangement. | 05-14-2015 |
20150338605 | Wide Angle Lens and Image Pickup Apparatus Using the Same - A wide angle lens includes in order from an object side, a front lens unit having a positive refractive power, one focusing lens having a negative refractive power, and a rear lens unit having a positive refractive power, and at the time of focusing, the focusing lens moves on an optical axis, and the following conditional expressions (1) and (2) are satisfied. | 11-26-2015 |
Patent application number | Description | Published |
20110059597 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film. | 03-10-2011 |
20110175106 | SEMICONDUCTOR RECTIFIER - A semiconductor rectifier includes: a wide bandgap semiconductor substrate of a first conductivity type; a wide bandgap semiconductor layer of the first conductivity type which is formed on an upper surface of the wide bandgap semiconductor substrate and has an impurity concentration of 1E+14 atoms/cm | 07-21-2011 |
20120056195 | SEMICONDUCTOR DEVICE - One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface. | 03-08-2012 |
20120056196 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 03-08-2012 |
20120056197 | SEMICONDUCTOR RECTIFYING DEVICE - A wide bandgap semiconductor rectifying device of an embodiment includes a first-conductive-type wide bandgap semiconductor substrate and a first-conductive-type semiconductor layer that has an impurity concentration lower than that of the substrate. The device also includes a first-conductive-type first semiconductor region, and a second-conductive-type second semiconductor region that is formed between the first regions. The device also includes second-conductive-type third semiconductor regions in which at least part of the third regions are connected to the second wide bandgap semiconductor region, the third regions being formed between the first regions, the third regions having a width narrower than that of the second region. The device also includes a first electrode and a second electrode. In the device, a direction in which a longitudinal direction of the third regions are projected onto a (0001) plane of the layer has an angle of 90±30 degrees with respect to a <11-20> direction of the layer. A gap between the third regions is not lower than 2 | 03-08-2012 |
20130065382 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method of manufacturing a silicon carbide semiconductor device of an embodiment includes: implanting ions in a silicon carbide substrate; performing first heating processing of the silicon carbide substrate in which the ions are implanted; and performing second heating processing of the silicon carbide substrate for which the first heating processing is performed, at a temperature lower than the first heating processing. | 03-14-2013 |
20130234158 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 09-12-2013 |
20130237042 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming, by epitaxial growth, a silicon carbide film on the silicon carbide substrate into which the ions have been implanted; and forming a pn junction region in the silicon carbide film. | 09-12-2013 |
20130240904 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region. | 09-19-2013 |
20130313573 | SEMICONDUCTOR RECTIFIER - A semiconductor rectifier includes a first conductivity type wide bandgap semiconductor substrate having a first conductivity type wide bandgap semiconductor layer on an upper surface of which is formed a plurality of first wide bandgap semiconductor regions of the first conductivity type sandwiching a plurality of second wide bandgap semiconductor regions of a second conductivity type, and a plurality of third wide bandgap semiconductor regions of the second conductivity type, at least a part of the third wide bandgap semiconductor regions being connected to the second wide bandgap semiconductor regions and each of the third wide bandgap semiconductor regions having a width smaller than that of the second wide bandgap semiconductor regions. A first electrode is formed on the first and second wide bandgap semiconductor regions and a second electrode is formed on a lower surface of the wide bandgap semiconductor substrate. | 11-28-2013 |
20140034965 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device, includes: a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, an impurity concentration of the second semiconductor region being lower than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type provided on the second semiconductor region; and a fourth semiconductor region provided on the third semiconductor region or in a portion of the third semiconductor region. A lattice strain of the fourth semiconductor region is greater than a lattice strain of the third semiconductor region. | 02-06-2014 |
20140034966 | TRANSISTOR AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The second electrode is electrically continuous with the first semiconductor region. The structural body has a first region provided above a lower end of the second semiconductor region and a second region other than the first region. The first region is a region formed by making a ratio of concentration of source gas of the second element to concentration of source gas of the first element larger than 1.0. Impurity concentration of the first conductivity type in the first region is higher than that in the second region. | 02-06-2014 |
20140147997 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 05-29-2014 |
20140183177 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a first electrode and a heat generation portion. The first semiconductor region includes n-type silicon carbide. The second semiconductor region is provided on a portion of the first semiconductor region. The second semiconductor region includes p-type silicon carbide. The first electrode provided on the first semiconductor region and the second semiconductor region. The heat generation portion is provided on the second semiconductor region. | 07-03-2014 |
20140191247 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a gate electrode, a first semiconductor region, a second semiconductor region of a first conductivity type, a third semiconductor region of a second conductivity type and a fourth semiconductor region of the first conductivity type. The first semiconductor region includes a silicon carbide crystal of 4H—SiC. The second semiconductor region includes a first portion opposing the gate electrode and is provided between the gate electrode and the first semiconductor region. The third semiconductor region has a lattice spacing different from a lattice spacing of the silicon carbide crystal of 4H—SiC and is provided between the gate electrode and the second semiconductor region. The fourth semiconductor region is selectively provided on the third semiconductor region. | 07-10-2014 |
20140209927 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR SUBSTRATE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element. | 07-31-2014 |
20140252378 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor substrate includes a substrate and a semiconductor layer. The substrate has a first surface and containing a silicon carbide. The semiconductor layer is provided on the first surface. The semiconductor layer has a thickness of H centimeters in a perpendicular direction to the first surface. The semiconductor layer contains an epitaxially grown silicon carbide with an off angle θ provided relative to a (0001) face of the substrate. The semiconductor layer includes k pieces of basal plane dislocation per one square centimeter viewed in the perpendicular direction. When S=(½)×H | 09-11-2014 |
20140283736 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus of an embodiment includes a reaction chamber, a first gas supply channel that supplies a Si source gas to the reaction chamber, a second gas supply channel that supplies a C source gas to the reaction chamber, a third gas supply channel that supplies an n-type impurity source gas to the reaction chamber, a fourth gas supply channel that supplies a p-type impurity source gas to the reaction chamber, and a control unit that controls the amounts of the n-type impurity and p-type impurity source gases at a predetermined ratio, and introduces the n-type impurity and p-type impurity source gases into the reaction chamber. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al, Ga, or In and N, and/or a combination of B and P. | 09-25-2014 |
20140284619 | SIC EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE - An SiC epitaxial wafer of an embodiment includes, an SiC substrate, and a p-type first SiC epitaxial layer that is formed on the SiC substrate and contains a p-type impurity and an n-type impurity. An element A and an element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus) when the p-type impurity is the element A and the n-type impurity is the element D. The ratio of the concentration of the element D to the concentration of the element A in the combination(s) is higher than 0.33 but lower than 1.0. | 09-25-2014 |
20140284620 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes an n-type SiC substrate, an n-type SiC layer formed on the SiC substrate; a p-type first SiC region formed in the surface of the SiC layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the concentration of the element A in the combination(s) being higher than 0.33 but lower than 0.995, the concentration of the element A forming part of the combination(s) being not lower than 1×10 | 09-25-2014 |
20140284622 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes a p-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus). The ratio of the concentration of the element D to the concentration of the element A in the above combination is higher than 0.33 but lower than 0.995, and the concentration of the element A forming part of the above combination is not lower than 1×10 | 09-25-2014 |
20140284623 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus), the ratio of the concentration of the element A to the concentration of the element D in the combination(s) being higher than 0.40 but lower than 0.95, the concentration of the element D forming the combination(s) being not lower than 1×10 | 09-25-2014 |
20140286063 | RECTIFIER AND METHOD FOR CONTROLLING THE SAME - According to one embodiment, a rectifier includes a rectifying device, a control element and a controller. The control element is serially connected to the rectifying device. The control element has a resistance value that changes according to a control signal. The controller generates the control signal according to a change in a current flowing in the rectifying device. | 09-25-2014 |
20140335682 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 11-13-2014 |
20150194488 | TRANSISTOR AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The second electrode is electrically continuous with the first semiconductor region. The structural body has a first region provided above a lower end of the second semiconductor region and a second region other than the first region. The first region is a region formed by making a ratio of concentration of source gas of the second element to concentration of source gas of the first element larger than 1.0. Impurity concentration of the first conductivity type in the first region is higher than that in the second region. | 07-09-2015 |
Patent application number | Description | Published |
20080304301 | Power Converting Apparatus For System Connection - A grounding wire from a commercial power system is connected to a series-connection end of a series connection between two capacitors connected in series between a positive electrode and a negative electrode. A current detector monitors an output current of an inverter unit in which four switching elements and two diodes convert voltages at both ends of the series circuit of the capacitors at three levels. An operation control circuit controls a generation of a PWM signal to be applied to the four switching elements, to minimize a difference between a current value detected by the current detector and a target current value. | 12-11-2008 |
20090085537 | Power supply apparatus - A first booster circuit and a second booster circuit include input capacitors, reactors, diodes, switch elements, and output capacitors, and are arranged to be symmetric to each other on a positive side and a negative side. The reactors are magnetically coupled to each other. With such configuration, the switch elements are on/off controlled simultaneously based on terminal voltages of the input capacitors and the output capacitors. | 04-02-2009 |
20090289618 | ZERO-PHASE CURRENT DETECTING APPARATUS - In a zero-phase current detecting apparatus, a feedback loop is made up of a pulse generating unit, a current detecting unit, a peak detecting unit, an adding unit, and a current regulating unit. The adding unit outputs a difference between a target value and a peak value detected by the peak detecting unit. A zero-phase current is detected based on the difference output from the adding unit as a result of regulation of the peak value so as to be the target value in the adding unit. | 11-26-2009 |
20110127839 | SOLAR POWER GENERATION DEVICE - A transmitting circuit is connected to a power line at current flow-in sides to solar battery strings, and a receiving circuit is connected to the power line at current flow-out sides to the solar battery strings. An attenuating circuit connected in series to a bypass diode is provided in a bypass circuit. The transmitting circuit transmits a periodic signal of a predetermined frequency to the power line. The receiving circuit receives via the solar battery strings a transmission signal transmitted from the transmitting circuit to the power line. A determining circuit determines that, when it is detected that an amplitude of a transmission signal received by the receiving circuit is attenuated by a predetermined value or more, direct-current power is conducted to the bypass circuit. | 06-02-2011 |
20120075899 | INTERCONNECTION INVERTER DEVICE - The interconnection point of capacitors C | 03-29-2012 |
20120140534 | POWER CONVERSION SYSTEM AND COMMUNICATION ADDRESS SETTING METHOD - There is provided a power conversion system, and a photovoltaic inverter includes a communication unit that broadcast-transmits a setting request signal of a predetermined communication address. The photovoltaic inverter includes a display unit that displays the predetermined communication address indicated by the setting request signal, and an address setting unit that generates a setting completion signal indicating that the predetermined communication address has been set as the communication address of the photovoltaic inverter if an input accepting unit accepts an input such that the predetermined communication address is set. An address management unit of the photovoltaic inverter generates a setting request signal indicating a communication address other than the predetermined communication address if the setting completion signal for the predetermined communication address is received. | 06-07-2012 |
20150073810 | MUSIC PLAYING METHOD AND MUSIC PLAYING SYSTEM - The music playing method comprises acquiring an inputted voice, detecting that any one registered character string from among a plurality of registered character strings stored in a recording medium is contained in the voice, and outputting music corresponding to the registered character string after a delay time stored in the recording medium has passed from the time when the voice containing the registered character string is detected in the character string detecting. | 03-12-2015 |
20150095750 | MESSAGE EDITING METHOD, MESSAGE EDTING APPARATUS, AND MESSAGE COMMUNICATION SYSTEM - A message editing apparatus includes a receiving part which receives text data from a message communication terminal connected through a communication line, a storage part which stores the text data and additional data corresponding to the text data, a display time determining part which determines display time of the additional data, a dividing part which divides the text data into a plurality of divided text portions according to the display time, a message generating part which generates a synthesized message containing the additional data and the plurality of divided text portions, and a transmitting part which transmits the synthesized message to a destination specified by the message communication terminal. | 04-02-2015 |
20150343906 | PROPULSION CONTROL APPARATUS FOR RAILROAD VEHICLE - A propulsion control apparatus includes a first power converter that operates as a DC/AC converter, a DC/DC converter, or an AC/DC converter, a second power converter, a first control device that controls operations of a first motor and the first power converter, and a second control device that controls operations of a second motor and the second power converter, wherein a power storage device is configured to be able to connect to a second input/output end side and functions as a direct-current power supply that is charged with direct-current power supplied from the second input/output end side or discharges direct-current power to the second input/output end side. | 12-03-2015 |
Patent application number | Description | Published |
20090033086 | Valve holding member - A valve holding member made of a sheet metal includes a hub part ( | 02-05-2009 |
20090144812 | ENTRY AUXILIARY APPARATUS, ENTRY AUXILIARY SYSTEM, ENTRY AUXILIARY METHOD AND ENTRY AUXILIARY PROGRAM - An entry auxiliary apparatus includes: an authentication entry detection unit, an adequacy determination unit and an entry auxiliary unit. The authentication entry detection unit detects a first authentication server URL included in data of a web page displayed. The adequacy determination unit compares the first authentication server URL with a second authentication server URL included in login information indicating an input history of authentication information and a third authentication server URL included in a service group. The service group, which includes a group of authentication server URLs locating authentication servers that authenticate with an identical authentication information, is related to the login information. The adequacy determination unit relates the login information to an adequacy level depending on a result of the comparison. The entry auxiliary unit assists input of authentication information into the web page based on the login information and the adequacy level. | 06-04-2009 |
20090165100 | WEB PAGE SAFETY JUDGMENT SYSTEM - A user terminal displays on its display unit a target web page including an authentication information input field into which input authentication information is inputted by the user terminal. The user terminal judges first to third validity levels for a plurality of login history information by referring to a login information list and a service group information. The user terminal selects a corresponding process from a plurality of predetermined processes for the input authentication information based on existence or absence of the login history information in the first or second validity level and on a result of checking the input authentication information with login information in the login history information in the first to third validity levels. The user terminal executes the corresponding process. | 06-25-2009 |
20100108162 | PIPE COUPLING MEMBER FOR HIGH-PRESSURE FLUID - A pipe coupling member for high-pressure fluid such as liquefied hydrogen includes a seal ring having a highly effective sealing function to prevent leakage of the fluid. The seal ring ( | 05-06-2010 |
20150027593 | COLD-ROLLED STEEL SHEET AND PROCESS FOR MANUFACTURING SAME - A high-strength cold-rolled steel sheet having excellent ductility and stretch flangeability includes: a chemical composition consisting, in mass %, C: 0.06 to 0.3, Si: 0.6 to 2.5%, Mn: 0.6 to 3.5%, P: at most 0.1%, S: at most 0.05%, Ti: 0 to 0.08%, Nb: 0 to 0.04%, total of Ti and Nb: 0 to 0.10%, sol.Al: 0 to 2.0%, Cr: 0 to 1%, Mo: 0 to 0.3%, V: 0 to 0.3%, B: 0 to 0.005%, Ca: 0 to 0.003%, REM: 0 to 0.003% and the remainder of Fe and impurities; a microstructure having a main phase including at least 40 area % in total of martensite and/or bainite; and a texture in which proportion of an average X-ray intensity in an {100}<011> to {211}<011> orientations relative to an average X-ray intensity of a random structure not having a texture is less than 6. | 01-29-2015 |
20150037610 | COLD-ROLLED STEEL SHEET AND PROCESS FOR MANUFACTURING SAME - A high-strength cold-rolled steel sheet includes a composition having controlled amounts of carbon, silicon, manganese, phosphorous, sulfur, titanium, niobium, sol. Aluminum, chromium, molybdenum, vanadium, boron, calcium, REM, and iron. A microstructure thereof has a main phase of ferrite of at least 40 area %, and a second phase of a low-temperature transformation phase consisting either or both of martensite and bainite, which comprises at least 10 area % in total and retained austenite (γ) at least comprising 3 area %. An average grain diameter of ferrite has a tilt angle of at least 15° is at most 5.0 mm, an average grain diameter of the low-temperature transformation-produced phase is at most 2.0 mm, an average grain diameter of lump-like retained γ having an aspect ratio of less than 5 is at most 1.5 mm, and an area fraction of the lump-like retained γ relative to the retained γ is at least 50%. | 02-05-2015 |
20150075680 | STEEL SHEET SUITABLE FOR IMPACT ABSORBING MEMBER AND METHOD FOR ITS MANUFACTURE - A steel sheet suitable as a starting material for a vehicle impact absorbing member with high absorption of impact energy and resistance to cracking contains, by mass %, C: 0.08-0.30%, Mn: 1.5-3.5%; Si+Al: 0.50-3.0%, P: 0.10% or less, S: at most 0.010%, and N: at most 0.010%, and optionally, one or more types selected from Cr: at most 0.5%, Mo: at most 0.5%, B: at most 0.010%, Ti: less than 0.04%, Nb: less than 0.030%, V: less than 0.5%, Ca: at most 0.010%, Mg: at most 0.010%, REM: at most 0.050%, and Bi: at most 0.050%. The microstructure contains, by area %, bainite: more than 50%, martensite: 3-30%, and retained austenite: 3-15%, the remainder comprising ferrite having an average grain diameter of less than 5 mm. The product of uniform elongation and hole expansion ratio is at least 300% | 03-19-2015 |