Patent application number | Description | Published |
20110068428 | Semiconductor photodetector and method for manufacturing the same - In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure. | 03-24-2011 |
20140252528 | SEMICONDUCTOR PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME - In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure. | 09-11-2014 |
Patent application number | Description | Published |
20100312849 | COMMUNICATION METHOD, INFORMATION PROCESSING APPARATUS, AND RECORDING MEDIUM RECORDING COMPUTER READABLE PROGRAM - A communication method includes: a first transmission step of transmitting first setting information and first network organization information regarding one information processing apparatus of a second network via a first communication path; a first determination step of determining a role of communication with a first master apparatus via a second communication path on the basis of the first network organization information and role adjustment information; a second transmission step of transmitting second setting information and second network organization information to the first master apparatus via the first communication path; a second determination step of determining a role of the communication with a second master apparatus via the second communication path on the basis of the second network organization information and role adjustment information by the first master apparatus; and a first communication start step of starting the communication via the second communication path with another information processing apparatus. | 12-09-2010 |
20110022755 | COMMUNICATION DEVICE, COMMUNICATION SCHEME DETERMINATION METHOD, AND PROGRAM - Provided is a communication device including a first communication unit that is capable of sending a polling-signal in a specific polling cycle and receiving a response-signal sent from a counterpart device in response to the polling-signal, based on a first scheme, a second communication unit that is capable of sending a polling-signal in a longer polling cycle than the first communication unit and receiving a response-signal sent from the counterpart device in response to the polling-signal, based on a second scheme, and a scheme determination unit that waits for reception of the response-signal by the second or the first communication unit for a specific period of time longer than the polling cycle of the second communication unit with a time of the response-signal being received by the first or the second communication unit as a reference, and determines a scheme usable by the counterpart device based on the reception result. | 01-27-2011 |
20110113477 | INFORMATION PROCESSING APPARATUS, INFORMATION PROVIDING SERVER, PROGRAM, COMMUNICATION SYSTEM, AND LOGIN INFORMATION PROVIDING SERVER - In one example embodiment, the communication system disclosed herein includes an information processing apparatus that acquires address information from a memory device having a free area including the address information and a secure area including account information. The information processing apparatus connects to a resource of a server using the acquired address information. The information processing apparatus causes a security server to acquire the account information from the memory device and transmit the acquired account information to the server such that the server enables a user to access the resource of the server using the account information. | 05-12-2011 |
20110237187 | Information processing system, information processing apparatus, and administration server - A system and method for information processing is provided. In an embodiment of the present system and method, a connection target apparatus is detected at an information processing apparatus. Upon detection, the information processing apparatus generates apparatus information and transmits the apparatus information to a server via a communication path. Based on the apparatus information, the server generates connection information and transmits the connection information to the information processing apparatus. The information processing apparatus may use the connection information to establish communication with the connection target apparatus via another communication path. | 09-29-2011 |
20110317839 | INFORMATION PROCESSING DEVICE AND METHOD, PROGRAM, AND INFORMATION PROCESSING SYSTEM - An information processing device which shares data with one or more communication partners includes a creation unit which creates its own encryption key that the device uses for itself and encryption keys that the communication partners use, a first communication unit which transmits all the encryption keys created by the creation unit to the communication partners with the first communication, a division unit which divides the data, an encryption unit which encrypts its own data that the device is to save for itself among the data divided by the division unit with its own encryption key, a second communication unit which transmits other data that the communication partners are to save among the data divided by the division unit to the communication partners with the second communication, and a storage unit which stores its own data encrypted by the encryption unit and the other encryption keys. | 12-29-2011 |
20140096218 | Information processing apparatus, information providing server, program, communication system, and login information providing server - In one example embodiment, the communication system disclosed herein includes an information processing apparatus that acquires address information from a memory device having a free area including the address information and a secure area including account information. The information processing apparatus connects to a resource of a server using the acquired address information. The information processing apparatus causes a security server to acquire the account information from the memory device and transmit the acquired account information to the server such that the server enables a user to access the resource of the server using the account information. | 04-03-2014 |
Patent application number | Description | Published |
20120148184 | SEMICONDUCTOR OPTICAL MODULATOR AND METHOD FOR MANUFACTURING THE SAME - A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening. | 06-14-2012 |
20120309121 | METHOD OF MAKING SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction. | 12-06-2012 |
20130012002 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask. | 01-10-2013 |
20130058371 | SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer. | 03-07-2013 |
20130071129 | MULTI-CHANNEL OPTICAL WAVEGUIDE RECEIVER - A multi-channel optical waveguide receiver includes an optical input port; an optical branching unit; light-receiving elements having bias electrodes and signal electrodes; optical waveguides being optically coupled between the optical branching unit and the light-receiving elements; capacitors electrically connected between the bias electrodes and a reference potential, the capacitors and the bias electrodes being connected through interconnection patterns; and a signal amplifier including input electrodes. The optical branching unit, the light-receiving elements, the optical waveguides, and the capacitors are formed on a single substrate, the substrate having an edge extending in a first direction. The signal amplifier and the substrate are arranged in a second direction crossing the first direction. The input electrodes and the signal electrodes are arranged along the edge of the substrate. Each of the signal electrodes of the light-receiving elements is electrically connected through a bonding wire to the input electrode. | 03-21-2013 |
Patent application number | Description | Published |
20130099890 | PROTECTION ELEMENT AND METHOD FOR PRODUCING PROTECTION ELEMENT - A protective element that is capable of promptly reliably disconnecting a current path by taking advantage of the erosion phenomenon of a solder in a melted state. A plurality of electrodes is formed by a first electrically conductive layer deposited on a substrate and by a plurality of second electrically conductive layers. A solder paste has a wetting performance for the electrodes higher than that for the substrate and is deposited on top of the first and second electrically conductive layers formed on the substrate. The solder paste melts by at least one out of heat generated by a resistor and heat generated by a stack of the electrodes and the solder paste. As the solder paste erodes the portion of the first electrically conductive layer intermediate between the electrodes, it is attracted towards the electrodes exhibiting higher wettability by it than that of the substrate. | 04-25-2013 |
20140340046 | PROTECTIVE ELEMENT, PROTECTIVE ELEMENT FABRICATION METHOD, AND BATTERY MODULE IN WHICH PROTECTIVE ELEMENT IS EMBEDDED - A protective element including a substrate having a first insulating member and a concave portion formed thereon, a heating body layered on the concave portion of the substrate, a second insulating member layered on the substrate so as to cover at least covering the heating body, first and second electrodes layered on a surface of the substrate on which the second insulating member is layered, a heating body electrode layered on the second insulating member so as to be superimposed with the heating body, and electrically connected to a current path between the first and the second electrodes as well as onto and the heating body, and a low-melting point metal layered from the heating body electrode toward the first and the second electrodes configured to cause a blowout of the current path between the first and the second electrodes by heating. | 11-20-2014 |
20150084734 | PROTECTION ELEMENT - The present invention aims to achieve a Pb-free protection element by using a layered body including a high melting point metal layer and a low melting point metal layer. A protection element includes an insulating substrate, a heating body, an insulating member, two electrodes, a heating body extraction electrode, and a fusible conductor. Furthermore, the fusible conductor includes a layered body including at least a high melting point metal layer and a low melting point metal layer, and the low melting point metal layer is melted by a heat generated by the heating body, whereby, while eroding the high melting point metal layer, the low melting point metal layer is drawn close to the side of the two electrodes and the heating body extraction electrode, and fused, the two electrodes and the heating body extraction electrode each having high wettability for the low melting point metal layer. | 03-26-2015 |
Patent application number | Description | Published |
20130182733 | WAVEGUIDE-TYPE OPTICAL SEMICONDUCTOR DEVICE - A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction. | 07-18-2013 |
20130244363 | METHOD FOR PRODUCING OPTICAL SEMICONDUCTOR DEVICE - A method for producing an optical semiconductor device includes the steps of forming a semiconductor structure; forming a mask on the semiconductor structure; etching the semiconductor structure with the mask to form first and second stripe-shaped grooves and a mesa portion; forming a protective film on a top surface and side surfaces of the mesa portion; forming a resin portion on the protective film; etching the resin portion and the protective film formed on the top surface; forming an upper electrode on the top surface; and forming an electrical interconnection on the resin portion. The resin portion has an inclined surface region that rises from a first point above the mesa portion toward a second point above the first stripe-shaped groove. The step of etching the resin portion and the protective film includes the substeps of etching the resin portion and simultaneously etching the resin portion and the protective film. | 09-19-2013 |
20140070351 | METHOD FOR MANUFACTURING OPTICAL WAVEGUIDE RECEIVER AND OPTICAL WAVEGUIDE RECEIVER - A method for manufacturing an optical waveguide receiver includes the steps of growing first and second stacked semiconductor layer sections, the second stacked semiconductor layer section including a core layer and a cladding layer; forming a first mask including first and second portions; etching the first and second stacked semiconductor layer sections by using the first mask, the first and second stacked semiconductor layer sections covered with the first portion being etched in a mesa structure, the second stacked semiconductor layer section covered with the second portion being etched in a terrace-shaped structure; removing the second portion from the first mask with the first portion left; selectively etching the cladding layer until exposing a surface of the core layer; and sequentially forming a first metal layer, an insulating film, and a second metal layer on the core layer exposed in the step of selectively etching the cladding layer. | 03-13-2014 |
20140167107 | SEMICONDUCTOR LIGHT RECEIVING DEVICE AND LIGHT RECEIVING APPARATUS - A semiconductor light receiving device includes a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region. The light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer. The semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer. | 06-19-2014 |
20140246746 | OPTICAL-TO-ELECTRICAL CONVERTER UNIT AND SEMICONDUCTOR LIGHT-RECEIVING DEVICE - An optical-to-electrical converter unit includes a substrate having front and back surfaces; an optical waveguide unit; and an optical-to-electrical converter. The optical-to-electrical converter includes a light-receiving element optically coupled to the optical waveguide unit; a capacitance element including first and second conductive layers and an insulating layer disposed between the first and second conducive layers; an electrode pad electrically connected to the light-receiving element; a back electrode formed on the back surface of the substrate; and a via electrode extending from the front surface to the back surface of the substrate. The optical waveguide unit, the light-receiving element, the capacitance element, and the electrode pad are formed on the front surface. The first conductive layer of the capacitance element is electrically connected to the light-receiving element and the electrode pad. The second conductive layer of the capacitance element is electrically connected to the back electrode through the via electrode. | 09-04-2014 |
20140294335 | METHOD FOR MANUFACTURING SEMICONDUCTOR MODULATOR AND SEMICONDUCTOR MODULATOR - A method for manufacturing a semiconductor modulator includes the steps of preparing a substrate having a main surface including first and second areas; forming a stacked semiconductor layer on the main surface; forming an optical waveguide mesa by etching the stacked semiconductor layer using a mask, the optical waveguide mesa including an optical modulation portion; applying a resin on a top surface and a side surface of the optical waveguide mesa and on the substrate; forming a first opening in the resin on the second area of the substrate; forming an underlayer structure on the second area of the substrate in contact with the substrate; and forming a pad electrode on the underlayer structure in contact with the underlayer structure through the first opening of the resin. The underlayer structure includes an insulating layer made of a dielectric material. | 10-02-2014 |
20140335644 | METHOD FOR PRODUCING SPOT SIZE CONVERTER - A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask. | 11-13-2014 |
20140342491 | METHOD FOR MANUFACTURING WAVEGUIDE-TYPE SEMICONDUCTOR DEVICE - A method for manufacturing a waveguide-type semiconductor device includes the steps of forming an epitaxial structure including a waveguide mesa and a device mesa; forming a mask for selective growth on the epitaxial structure; growing a semiconductor region on an end surface of the device mesa by using the mask for selective growth, the semiconductor region including a side portion having a layer shape and a protruding wall portion; forming an ohmic electrode on a top surface of the device mesa; forming a resin layer on the device mesa and the semiconductor region; forming a resin mask having an opening on the ohmic electrode; forming an electric conductor connecting the ohmic electrode to an electrode pad, the electric conductor passing over the protruding wall portion while making contact with a surface of the resin mask; and removing the resin mask after forming the electric conductor. | 11-20-2014 |