Patent application number | Description | Published |
20130225561 | INHIBITORS OF THE RENAL OUTER MEDULLARY POTASSIUM CHANNEL - This invention relates to compounds having structural Formula I: and pharmaceutically acceptable salts thereof which are inhibitors of the Renal Outer Medullary Potassium (ROMK) channel (Kir1.1). The compounds of Formula I are useful as diuretics and natriuretics and therefore are useful for the therapy and prophylaxis of disorders resulting from excessive salt and water retention, including cardiovascular diseases such as hypertension and chronic and acute heart failure. | 08-29-2013 |
20140206618 | Inhibitors of the Renal Outer Medullary Potassium Channel - The present invention provides compounds of Formula Ia and the pharmaceutically acceptable salts thereof, which are inhibitors of the ROMK (Kir1.1) channel. The compounds may be used as diuretic and/or natriuretic agents and for the therapy and prophylaxis of medical conditions including cardiovascular diseases such as hypertension, heart failure and conditions associated with excessive salt and water retention. | 07-24-2014 |
20140235628 | Inhibitors of the Renal Outer Medullary Potassium Channel - This invention relates to compounds having structural Formula I: | 08-21-2014 |
20140288088 | Inhibitors of the Renal Outer Medullary Potassium Channel - The present invention provides compounds of Formula I | 09-25-2014 |
20140296225 | Inhibitors of the Renal Outer Medullary Potassium Channel - The present invention provides compounds of Formula I | 10-02-2014 |
20140309213 | INHIBITORS OF THE RENAL OUTER MEDULLARY POTASSIUM CHANNEL - This invention relates to compounds of Formula I-VI having the following general structure: | 10-16-2014 |
20140336177 | INHIBITORS OF THE RENAL OUTER MEDULLARY POTASSIUM CHANNEL - The present invention provides compounds of Formula I | 11-13-2014 |
20150025046 | PREPARATION AND USE OF BICYCLIC HIMBACINE DERIVATIVES AS PAR-1 RECEPTOR ANTAGONISTS - The present invention relates to bicyclic himbacine derivatives of the formula or a pharmaceutically acceptable salt thereof, wherein: X is —O—, —N(R), —C(R | 01-22-2015 |
20150315141 | Thrombin Inhibitors - Compounds of the invention, which may be useful in inhibiting thrombin and associated thrombotic occlusions, have the following structure: | 11-05-2015 |
20150329557 | Inhibitors of the Renal Outer Medullary Potassium Channel - The present invention provides compounds of Formula I | 11-19-2015 |
20160002255 | ANTIDIABETIC BICYCLIC COMPOUNDS - Novel compounds of the structural formula (I), and the pharmaceutically acceptable salts thereof, are agonists of G-protein coupled receptor 40 (GPR40) and may be useful in the treatment, prevention and suppression of diseases mediated by the G-protein-coupled receptor 40. The compounds of the present invention may be useful in the treatment of Type 2 diabetes mellitus, and of conditions that are often associated with this disease, including obesity and lipid disorders, such as mixed or diabetic dyslipidemia, hyperlipidemia, hypercholesterolemia, and hypertriglyceridemia. | 01-07-2016 |
20160002259 | INHIBITORS OF THE RENAL OUTER MEDULLARY POTASSIUM CHANNEL - The present invention provides compounds of Formula I | 01-07-2016 |
Patent application number | Description | Published |
20100069379 | Bicyclic androgen and progesterone receptor modulator compounds and methods - The present invention is directed to compounds, pharmaceutical compositions, and methods for modulating processes mediated by AR and PR. More particularly, the invention relates to nonsteroidal compounds and compositions that are high affinity, high specificity agonists, partial agonists (i.e., partial activators and/or tissue-specific activators) and antagonists for AR and PR. Also provided are methods of making such compounds and pharmaceutical compositions, as well as critical intermediates used in their synthesis. | 03-18-2010 |
20110112084 | Bicyclic androgen and progesterone receptor modulator compounds and methods - The present invention is directed to compounds, pharmaceutical compositions, and methods for modulating processes mediated by AR and PR. More particularly, the invention relates to nonsteroidal compounds and compositions that are high affinity, high specificity agonists, partial agonists (i.e., partial activators and/or tissue-specific activators) and antagonists for AR and PR. Also provided are methods of making such compounds and pharmaceutical compositions, as well as critical intermediates used in their synthesis. | 05-12-2011 |
Patent application number | Description | Published |
20120096246 | NONVOLATILE STORAGE USING LOW LATENCY AND HIGH LATENCY MEMORY - Nonvolatile storage includes first and second memory types with different read latencies. FLASH memory and phase change memory are examples. A first portion of a data block is stored in the phase change memory and a second portion of the data block is stored in the FLASH memory. The first portion of the data block is accessed prior to the second portion of the data block during a read operation. | 04-19-2012 |
20120126196 | Upwardly Tapering Heaters for Phase Change Memories - A substantially planar heater for a phase change memory may taper as it extends upwardly to contact a chalcogenide layer. As a result, the contact area between heater and chalcogenide is reduced. This reduced contact area can reduce power consumption in some embodiments. | 05-24-2012 |
20130134380 | UPWARDLY TAPERING HEATERS FOR PHASE CHANGE MEMORIES - A substantially planar heater for a phase change memory may taper as it extends upwardly to contact a chalcogenide layer. As a result, the contact area between heater and chalcogenide is reduced. This reduced contact area can reduce power consumption in some embodiments. | 05-30-2013 |
20140061574 | THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE - Three dimension memory arrays and methods of forming the same are provided. An example three dimension memory array can include a stack comprising a plurality of first conductive lines separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines, such that the at least one conductive extension intersects a portion of at least one of the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. | 03-06-2014 |
20140061575 | THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE - Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. The at least one conductive extension, storage element material, and cell select material are located between co-planar pairs of the plurality of first conductive lines. | 03-06-2014 |
20140295638 | THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE - Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. The at least one conductive extension, storage element material, and cell select material are located between co-planar pairs of the plurality of first conductive lines. | 10-02-2014 |
20150044849 | THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE - Three dimension memory arrays and methods of forming the same are provided. An example three dimension memory array can include a stack comprising a plurality of first conductive lines separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines, such that the at least one conductive extension intersects a portion of at least one of the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. | 02-12-2015 |
Patent application number | Description | Published |
20080311350 | UNITIZED COMPOSITES UTILIZING SHRINKABLE LAYERS TO ACHIEVE SURFACE TEXTURE AND BULK - A simplified manufacturing technique to directly form unitized composite structures optionally with at least one relatively flat surface and with at least one surface having raised mound-like elements in an internally-bonded unitized composite is provided. A matrix of fibrous and or other material elements is deposited in un-bonded layers. At least one element is composed of a contractive material which shrinks relative to the other component elements when activated, such as by heating in an oven, to become an internally bonded unitized composite with z-direction raised mound-like texturing after the activation step. Finished product applications and unitized composite webs suitable for finished products employing the inventions are provided. | 12-18-2008 |
20090239026 | WAVE-LIKE STRUCTURES BONDED TO FLAT SURFACES IN UNITIZED COMPOSITES AND METHODS FOR MAKING SAME - A simplified manufacturing technique to directly form a unitized composite structure with at least one relatively flat surface and at least one sinuous element in an internally-bonded unitized composite is provided. A matrix of fibrous and or other materials is deposited in layers which are subsequently formed into corrugated or wave-like shapes and exposed to an activation step. At least one element is composed of a contractive material which shrinks when activated, such as by heating in an oven, to become relatively flat and optionally bonded to at least one other non-contractive layer which remains in a sinuous shape after the activation step. | 09-24-2009 |
20090242139 | UNITIZED COMPOSITE FABRICS WITH CROSS MACHINE WAVE-LIKE SHAPING AND METHODS FOR MAKING SAME - A manufacturing method for producing a unitized composite material has been discovered. An assembly of loose fibers or fiber and fabric combinations is formed where at least one of the layered elements contains a bondable material such as a thermally sensitive bonding fiber. The un-bonded layered assembly is shaped into a wavy form having a repeating wave-like pattern of the desired amplitude and wavelength. The amplitude and wavelength of the repeating waves can be altered such as by changing the relative speeds of a transfer device and an oven wire and the height of the transfer device relative to the height of the oven wire using simple machinery control settings. The shaped assembly is subsequently bonded in an oven or other activation step preserving the wave-like shaping when cooled or removed from the activation effect. | 10-01-2009 |
20110214800 | WAVE-LIKE STRUCTURES BONDED TO FLAT SURFACES IN UNITIZED COMPOSITES AND METHODS FOR MAKING SAME - A simplified manufacturing technique to directly form a unitized composite structure with at least one relatively flat surface and at least one sinuous element in an internally-bonded unitized composite is provided. A matrix of fibrous and or other materials is deposited in layers which are subsequently formed into corrugated or wave-like shapes and exposed to an activation step. At least one element is composed of a contractive material which shrinks when activated, such as by heating in an oven, to become relatively flat and optionally bonded to at least one other non-contractive layer which remains in a sinuous shape after the activation step. | 09-08-2011 |
20110214827 | UNITIZED COMPOSITES UTILIZING MELTED SYNTHETIC FIBERS TO ACHIEVE ROUGH OR ABRASIVE ATTRIBUTES AND DECORATIVE EFFECTS - A manufacturing process for making short fiber low denier unitized composite fabrics with abrasive features includes steps of depositing an assembly comprising one or more layers of fibrous material and optionally one or more layers of non-fibrous material, at least one of the outer layers containing a multicompartment synthetic fiber, and activating at least one component of the multicomponent fiber to impart an abrasive attribute to the outer surface. | 09-08-2011 |
20120094085 | UNITIZED COMPOSITE FABRICS WITH CROSS MACHINE WAVE-LIKE SHAPING AND METHODS FOR MAKING SAME - Processes for producing a composite material comprising three or more layers, including at least one internal layers that is a roll good element or an in situ produced nonwoven layer includes shaping an assembly of three or more layers into a wave-like form, with at least one of the internal layers being a roll good element or an in situ produced nonwoven layer, and subsequently activating the assembly to cause bonding of the layers and creation of a unitized composite material that, for example, has utility as a filter material. | 04-19-2012 |