Patent application number | Description | Published |
20090117270 | METHOD FOR TREATING SUBSTRATE AND RECORDING MEDIUM - A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step. | 05-07-2009 |
20090197410 | METHOD OF FORMING TASIN FILM - A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH | 08-06-2009 |
20090250006 | RAW MATERIAL FEEDING DEVICE AND FILM FORMATION SYSTEM - A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side. | 10-08-2009 |
20090291549 | METAL FILM DECARBONIZING METHOD, FILM FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - On a Si substrate | 11-26-2009 |
20100136230 | METHOD OF CLEANING POWDERY SOURCE SUPPLY SYSTEM, STORAGE MEDIUM, SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD - A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process. | 06-03-2010 |
20100227459 | METHOD FOR FORMING W-BASED FILM, METHOD FOR FORMING GATE ELECTRODE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a method for forming a W-based film including a step for placing a substrate in a processing chamber, a step for forming a WSi film by alternately repeating disposition of W through introduction of a W(CO) | 09-09-2010 |
20140206189 | TiN FILM FORMING METHOD AND STORAGE MEDIUM - A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates. | 07-24-2014 |
Patent application number | Description | Published |
20080311297 | CVD METHOD USING METAL CARBONYL GAS AND COMPUTER STORAGE MEDIUM STORING PROGRAM FOR CONTROLLING SAME - A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired. | 12-18-2008 |
20090035466 | RUTHENIUM FILM FORMATION METHOD AND COMPUTER READABLE STORAGE MEDIUM - A substrate is placed and heated in a process chamber. A gas of a pentadienyl compound of ruthenium, such as 2,4-dimethylpentadienyl ethylcyclopentadienyl ruthenium, and oxygen gas are supplied into the process chamber. These gases react with each other on the substrate thus heated, and a ruthenium film is thereby formed on the substrate. | 02-05-2009 |
20100064972 | CVD FILM FORMING APPARATUS - A CVD film forming apparatus for forming a predetermined film on a target substrate via CVD by reacting a film forming gas on a surface of the substrate while heating the substrate includes a processing chamber capable of being maintained at vacuum, and a stage for mounting thereon the substrate in the processing chamber, the stage having a diameter larger than that of the substrate. Further, the CVD film forming apparatus includes a heating device provided in the stage to heat the substrate, a gas supply unit for supplying the film forming gas into the processing chamber, a gas exhaust device for exhausting the processing chamber to vacuum, and a covering for covering a peripheral region of the stage that surrounds the substrate mounted on the stage to reduce thermal effects from the stage to a peripheral portion of the substrate. | 03-18-2010 |
20130230652 | RUTHENIUM FILM FORMATION METHOD AND COMPUTER READABLE STORAGE MEDIUM - A ruthenium film formation method includes placing and heating a substrate inside a process chamber, and supplying a ruthenium compound gas and a decomposing gas for decomposing this compound into the process chamber while periodically modulating at least one of flow rates of these gases, to form a plurality of steps having gas compositions different from each other. Without purging an interior of the process chamber between these steps, the method includes causing the gases to react with each other on the substrate thus heated, thereby forming a ruthenium film on the substrate. | 09-05-2013 |
Patent application number | Description | Published |
20090140353 | Method of Film Deposition and Film Deposition System - The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film. | 06-04-2009 |
20090142491 | Method of Film Deposition and Film Deposition System - The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material. | 06-04-2009 |