Ikeda, Miyagi
Etsuro Ikeda, Miyagi JP
Patent application number | Description | Published |
---|---|---|
20080233389 | OPTICAL RECORDING MEDIUM AND ITS MANUFACTURING METHOD - An optical recording medium having an inorganic recording film, wherein the inorganic recording film has: a first recording film containing titanium Ti; and a second recording film containing oxides of germanium Ge and tin Sn. | 09-25-2008 |
20090097387 | WRITE-ONCE TYPE OPTICAL RECORDING MEDIUM AND FABRICATION METHOD THEREOF - To accomplish write-once type optical recording mediums that have excellent recording and reproducing characteristics and producibility and that are capable of being fabricated at low cost. A write-once type optical recording medium | 04-16-2009 |
20090130461 | INFORMATION RECORDING MEDIUM AND ITS MANUFACTURING METHOD - To obtain high durability even when a recording material which causes big cubical expansion is used for a recording film of an information recording medium. An information recording medium | 05-21-2009 |
20100047503 | OPTICAL RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME - An optical recording medium is an optical recording medium having an inorganic recording film and has a transparent conductive film on the inorganic recording film. The inorganic recording film has a first recording film containing titanium (Ti) and a second recording film containing an oxide of germanium (Ge). The transparent conductive film is provided on the side of the second recording film. The transparent conductive film contains an oxide of tin (Sn). | 02-25-2010 |
20100233413 | OPTICAL RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME - A write-once type optical recording medium | 09-16-2010 |
Katsumi Ikeda, Miyagi JP
Patent application number | Description | Published |
---|---|---|
20090020789 | CHARGE TRANSFER DEVICE AND IMAGING APPARATUS - An HCCD includes a channel | 01-22-2009 |
20090078969 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a semiconductor substrate; photoelectric conversion elements; vertical charge transfer paths that transfer charges generated in photoelectric conversion elements, in a vertical direction; a horizontal charge transfer path that transfers the charges transferred in vertical charge transfer paths, in a horizontal direction orthogonal to the vertical direction; a plurality of charge accumulating sections between the vertical charge transfer paths and the horizontal charge transfer path; a plurality of electrodes disposed above the respective charge accumulating sections, the plurality of electrodes being classified into a plurality of kinds of electrodes; wirings corresponding to the respective kinds of electrodes and extending in the horizontal direction above the plurality of electrodes; and a planarizing layer disposed between the wirings and an uneven surface caused by the plurality of electrodes that are present in areas overlapping the wirings, so as to planarize the uneven surface. | 03-26-2009 |
Kazutaka Ikeda, Miyagi JP
Patent application number | Description | Published |
---|---|---|
20100221608 | ALLOY POWDER FOR ELECTRODE AND METHOD FOR PRODUCING SAME - An electrode alloy powder includes a hydrogen storage alloy and magnetic material clusters. The hydrogen storage alloy contains 20 to 70 wt % of Ni. The magnetic material clusters contain metal nickel, and have an average cluster size of 8 to 10 nm. A method for producing the electrode alloy powder includes an activation step of allowing a raw material powder including a hydrogen storage alloy to be in contact with an aqueous solution containing A wt % of sodium hydroxide and held at 100° C. or greater for B minutes. A and B satisfy 2410≦A×B≦2800. | 09-02-2010 |
Kouichi Ikeda, Miyagi JP
Patent application number | Description | Published |
---|---|---|
20080309772 | IMAGE PICKUP APPARATUS AND METHOD, LENS UNIT AND COMPUTER EXECUTABLE PROGRAM - A digital still camera includes a lens system having a variable focal length. An image pickup unit is disposed on an optical axis of the lens system, for forming an image frame. Yaw and pitch rate sensors detect a camera shake to output shake information. A shake correction mechanism, associated with an anti-vibration lens, compensates for the camera shake by shifting perpendicularly to the optical axis according to the shake information. A memory stores an LUT of correlation information between the focal length and a shift amount of the shake correction mechanism to compensate for an image shake of the image frame created due to a change in the focal length. In case of lack of detected camera shake with the yaw and pitch rate sensors, the shake correction mechanism is controlled with a shift amount associated with the focal length according to the LUT. | 12-18-2008 |
Naoki Ikeda, Miyagi JP
Patent application number | Description | Published |
---|---|---|
20090091856 | MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING/REPRODUCING SYSTEM - A magnetic recording medium includes a tape-shaped nonmagnetic support, and a vertical magnetic layer formed on a main surface of the nonmagnetic support by a vacuum thin-film forming technique, signals being recorded on and reproduced from the vertical magnetic layer in a linear system. In the magnetic recording medium, the dipulse ratio of the vertical recording layer is 0.36 or more. | 04-09-2009 |
Shoji Ikeda, Miyagi JP
Patent application number | Description | Published |
---|---|---|
20130288398 | METHOD OF MANUFACTURING TUNNELING MAGNETORESISTIVE ELEMENT - [Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO. | 10-31-2013 |
20140097509 | MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY - A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable. | 04-10-2014 |
20140340961 | TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME - Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/k | 11-20-2014 |