In Sun
In Sun Cho, Namyangju-Si KR
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20090114604 | Method and System for Photocatalytically Decomposing Organic Pollutants Using Electromotive Force of Solar Cell - The present invention relates to a method and system for photocatalytically decomposing organic pollutants using the electromotive force of a solar cell. The present invention provides a method and system for decomposing organic pollutants, which can greatly increase the rate of decomposition of organic pollutants at low cost by combining a photocatalytic organic pollutant decomposition device, capable of decomposing organic pollutants using light energy, with a solar cell, capable of applying an external voltage to the photocatalytic organic pollutant decomposition device using light energy. | 05-07-2009 |
20090192032 | Visible light-responsive photocatalyst composition containing tungsten-based oxides and method of producing the same - Disclosed herein is a light-responsive photocatalyst composition, which is a composite oxide semiconductor containing tungsten, and which can efficiently absorb visible light emitted from the sun and light emitted from interior lamps, such as fluorescent lamps, etc., and a method of preparing the light-responsive photocatalyst composition. The visible light-responsive photocatalyst composition can decompose volatile organic compounds or harmful organic matter causing sick house syndrome, even indoors, because it can be activated by visible light outdoors and can respond to light emitted from interior lamps, such as fluorescent lamps, etc. | 07-30-2009 |
20140017163 | METHOD OF PREPARING SN-BASED OXIDE SEMICONDUCTOR NANOPOWDER AND METHOD OF MANUFACTURING PHOTOELECTRIC ELECTRODE USING SN-BASED OXIDE SEMICONDUCTOR NANOPOWDER - Disclosed herein is a method of preparing a ternary oxide semiconductor compound, including the steps of: dissolving an inorganic salt source including Sn and an inorganic salt source including at least one selected from the alkali earth metal group consisting of Ba, Sr and Ca in a mixed solvent of water and hydrogen peroxide to form a mixed solution; precipitating the mixed solution by changing the PH thereof to obtain a precipitate and then aging the precipitate; and drying and then annealing the aged precipitate to prepare MSnO | 01-16-2014 |
In Sun Cho, Aptos, CA US
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20140294721 | DOPING AND REDUCTION OF NANOSTRUCTURES AND THIN FILMS THROUGH FLAME ANNEALING - A sol-flame method includes 1) forming a sol-gel precursor solution of a source of a dopant; 2) coating a nanostructure or a thin film with the sol-gel precursor solution; and 3) subjecting the coated nanostructure or the coated thin film to flame annealing to form a doped nanostructure or a doped thin film. | 10-02-2014 |
In Sun Han, Seoul KR
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20130272989 | POLYSACCHARIDE-BASED GRAFT COPOLYMER AND COMPOSITION COMPRISING SAME FOR PERSONAL CARE - The present invention relates to a graft copolymer including a polysaccharide as a main chain and a phosphorylcholine analogous group-containing monomer as a side chain, and a composition for skin and hair care including the copolymer as an active ingredient. The graft copolymer according to the present invention exhibits more improved moisturizing capacity and better biocompatibility than the existing polysaccharide-based graft copolymer by introducing a phosphorylcholine analogous group-containing compound, and accordingly, the composition for hair and skin care including the same also has improved moisturizing capacity, protection capacity of damaged hair, skin affinity, a skin barrier function, and the like. | 10-17-2013 |
20130295038 | Cross-Linked Copolymer Containing Phosphorylcholine Monomer and Cosmetic Composition Containing Same - Disclosed is a copolymer containing an α,β-ethylenically unsaturated monomer, a phosphorylcholine monomer, and a cross-linking agent as a monomer. Also disclosed are a cosmetic composition containing the copolymer and a cosmetic material using the cosmetic composition. | 11-07-2013 |
In Sun Jeon, Daejeon-Si KR
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20130169310 | TESTING CIRCUIT FOR DC-DC CONVERTER - Provided is a testing circuit capable of testing functionality of various DC-DC converters without an inductor. According to the present invention, various electronic elements forming the testing circuit for a DC-DC converter are converted in the same kinds of elements or different elements in one-to-one or one-to-two or more correspondence to electronic elements forming a typical DC-DC converter. When the conversion is performed, the electronic values of the elements may be properly scaled to test the DC-DC converter without consuming high power. Therefore, various problems of the related art are minimized. | 07-04-2013 |
In Sun Lee, Gyeonggi-Do KR
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20090117914 | FREQUENCY SPECTRUM SENSING METHOD USING PILOT SIGNAL AND COGNITIVE RADIO SYSTEM USING THE SAME - An operation method of a radio communication station is provided. The operation method of a radio communication station, the operation method including: transmitting a basic pilot signal to at least one terminal located in a coverage of a preoccupied system; and transmitting a cognitive radio (CR) pilot signal. | 05-07-2009 |
20090124206 | PILOT SIGNAL POWER CONTROL APPARATUS AND OPERATION METHOD OF PILOT SIGNAL POWER CONTROL APPARATUS - A pilot signal power control apparatus to determine a power level of a pilot signal of a primary network to indicate an availability of a wireless resource of thereof to a secondary user of a secondary network according to a cognitive radio technology, the pilot signal power control apparatus and an operation method thereof, the pilot signal power control apparatus including: a prediction unit to predict a noise increase and/or a sensing probability, the noise increase occurring in a primary user of the primary network due to a channel estimation error, and the sensing probability being a probability that a secondary user senses the pilot signal of; a channel capacity calculation unit to calculate a channel capacity of the primary user based on the predicted noise increase and/or sensing probability; and a power level determination unit to determine the power level of the pilot signal using the calculated channel capacity. | 05-14-2009 |
In Sun Lee, Seongnam-Si KR
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20090170545 | COGNITIVE RADIO COMMUNICATION APPARATUS AND METHOD WHICH ADAPTABLY CONTROLS SENSING REFERENCE LEVEL - A cognitive radio communication apparatus and method which adaptably controls a sensing reference level based on a transmission power of a transmitter is provided. A cognitive radio communication apparatus includes a sensing reference level control unit to adaptably control a sensing reference level based on a transmission power of a secondary transmitter included in a secondary network, and a fast sensing unit to determine whether a signal received for a predetermined time period exists based on the controlled sensing reference level. | 07-02-2009 |
20090186646 | COGNITIVE RADIO COMMUNICATION METHOD FOR CONTROLLING SENSING OPERATION AND COGNITIVE RADIO COMMUNICATION APPARATUS ENABLING THE METHOD - A cognitive radio communication apparatus and method to control a sensing operation. The cognitive radio communication apparatus includes an information receiver to receive channel state information associated with a channel occupancy state of a primary system from at least one sensing node of a secondary system; a sensing control unit to control a sensing period of the at least one sensing node according to a change pattern of the channel occupancy state, based on the channel state information; and a control information transmitter to transmit control information associated with the controlled sensing period to at least one member node of the secondary system. | 07-23-2009 |
20090209265 | MOBILE SYSTEM AND BASE STATION SYSTEM FOR EFFECTIVELY USING LICENSED SPECTRUM AND SHARED SPECTRUM - A mobile system and a base station system for effectively using a licensed spectrum and a shared spectrum are provided. The mobile system includes: an initialization unit to initialize transmitting and receiving of data using at least one of the licensed spectrum and the shared spectrum; a sensing unit to sense a spectrum for transmitting and receiving of the data via the at least one spectrum; and a transceiver to transmit and receive the data via the sensed spectrum. | 08-20-2009 |
20110064062 | FREQUENCY BAND SETTING APPARATUS AND METHOD, ACCESS POINT, AND FREQUENCY BAND USING METHOD OF ACCESS POINT - A frequency band setting apparatus and method are provided. The frequency band setting apparatus may include a calculation unit and a control unit. The calculation unit may calculate a basic frequency band of each of a plurality of Access Points (APs), and the control unit may divide a frequency band, which is available to the plurality of APs, into each of the calculated basic frequency bands and a common frequency band. | 03-17-2011 |
20110164621 | COMMUNICATION METHOD FOR RELAY NODE AND NEXT NODE OF THE RELAY NODE FOR NETWORK CODING - Provided is a communication method of a relay node for network coding, including determining one of a plurality of nodes included in a mesh network as a relay node to perform network coding; determining, by the relay node among the plurality of nodes, nodes capable of participating in the network coding; and performing the network coding with respect to the nodes capable of participating in the network coding. | 07-07-2011 |
In Sun Park, Hwaseong-Si KR
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20140137929 | ORGANIC SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell includes an active layer between a first electrode and a second electrode, and a transport layer between the active layer and one of the first or second electrodes. A plurality of nanoparticles are included in at least one of the active layer or the transport layer. The nanoparticles may have the same or different shapes or sizes and may be spaced differently based on location. The nanoparticles may be made of metal or a different material and the active layer may be made from an organic photovoltaic material. | 05-22-2014 |
20140179052 | METHOD OF FORMING A THIN FILM AND AN ELECTRONIC DEVICE - A method of forming a thin film includes coating one side of a transferring stamp including a hydrophilic polymer layer with a hydrophilic solution to form a transfer layer, and transferring the transfer layer to the substrate. | 06-26-2014 |
In Sun Song, Gumi-City KR
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20090249208 | METHOD AND DEVICE FOR REPRODUCING IMAGES - A video reproduction control method comprising providing a list of at least one recorded program with a plurality of thumbnail images that correspond to different time points in the program, selecting a first thumbnail image, and reproducing the program from a first point in time that corresponds to the first thumbnail image. | 10-01-2009 |
In-Sun Cha, Seoul KR
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20140033616 | METHOD OF MANUFACTURING ENDMILL TOOL - Disclosed is a method of manufacturing an endmill tool, including detecting a crystal direction of a selected natural diamond gemstone by inspecting the structure of the diamond gemstone, forming a lower base surface and an upper reference surface of the diamond gemstone by using abrading equipment after welding the diamond gemstone with a first sub-body, grinding an edge portion of the diamond gemstone by using grinding equipment after welding a machining tip, which is separated from the first sub-body, with a second sub-body to complete the machining tip having a cutting blade, and temporarily installing the machining tip, which is separated from the second sub-body, in a super hard body installed in setting equipment, adjusting an alignment state of the machining tip, and bonding the machining tip with the super hard body by using a normal-temperature bonding agent through a normal-temperature coagulation scheme to complete the endmill tool. | 02-06-2014 |
20140119843 | PCD MILLING CUTTER FOR LENS PROCESSING - Disclosed is a PCD milling cutter for lens processing. The PCD milling cutter includes a shaft having one axial end portion rotatably coupled with a driving unit of a milling unit for lens processing, a rotary head coupled with the axial end portion of the shaft and having a plurality of installation protrusions which protrude outward along a circumference thereof about a rotation center and have outer circumferential surfaces rounded in an axial direction of the shaft, and a plurality of PCD tips coupled with installation surfaces of the installation protrusions positioned in a rotation direction, provided at outer end portions thereof with rounded cutting blades sharply processed in the axial direction of the shaft, and provided in inner end portions thereof, which are opposite to the cutting blades, with cutting grooves formed in a concave shape to increase a welding force. | 05-01-2014 |
In-Sun Chung, Namyangju-Si KR
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20150136269 | PRESSURE-RESISTANT HOSE - Disclosed herein is a pressure-resistant hose. The hose includes an inner lining ( | 05-21-2015 |
In-Sun Hwang, Yeongtong-Gu KR
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20100053502 | PRISM SHEET AND LIQUID CRYSTAL DISPLAY HAVING THE SAME - Disclosed are a prism sheet and a liquid crystal display having the same. The prism sheet includes a base and a plurality of prism mountains. The base includes a front surface and a rear surface facing the front surface. The prism mountains are integrally formed with the base on the rear surface of the base. At least one prism mountain includes a plurality of light incidence surfaces and a reflective surface. The light incidence surfaces receive light. The reflective surface is adjacent to one of the light incidence surfaces to reflect the light. A vertical angle of the prism mountains formed between the light incidence surface adjacent to the reflective surface and the reflective surface, is in a range of about 70° to about 100°. | 03-04-2010 |
In-Sun Jung, Suwon-Si KR
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20100167212 | RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME - A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5. | 07-01-2010 |
20100197089 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS - Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer. | 08-05-2010 |
In-Sun Kang, Seoul KR
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20090013139 | APPARATUS AND METHOD TO PREVENT DATA LOSS IN NONVOLATILE MEMORY - An apparatus for preventing data loss of a nonvolatile memory device and a method thereof are presented The apparatus includes a nonvolatile memory including a memory cell which writes bit information to a first page and a second page included in a first block using plural states which are implemented using at least 2 bits, and a data-processing unit which writes the bit information of the first page to a second block in the nonvolatile memory while the bit information is written to the second page after the bit information is written to the first page. | 01-08-2009 |
In-Sun Kim, Daejeon KR
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20100097163 | RESONATOR HAVING A THREE DIMENSIONAL DEFECTED GROUND STRUCTURE IN TRANSMISSION LINE - A resonator having a three dimensional Defected Ground Structure (DGS) in the transmission line includes a substrate installed at the center of the resonator floating in the air through supporting members installed on both ends of the substrate; a transmission line for transmitting signals installed on the upper surface of the substrate; an upper ground plane member installed on the upper surface of the substrate with predetermined interval from the surface of the substrate, wherein a DGS pattern with a predetermined shape is formed on each portion of the body of the ground plane member symmetrically with respect to the transmission line to form a resonator; a lower ground plane member installed on the lower surface of the substrate with predetermined interval from the surface of the substrate, wherein a DGS pattern with a predetermined shape is formed on each portion of the body of the ground plane member symmetrically with respect to the transmission line to form a resonator; an upper cover installed closely contacting the upper surface of the upper ground plane member to seal the upper opening of the DGS pattern formed on the upper ground plane member and to protect the upper ground plane member at the same time; and a lower cover installed closely contacting the lower surface of the lower ground plane member to seal the lower opening of the DGS pattern formed on the lower ground plane member and to protect the lower ground plane member at the same time. | 04-22-2010 |
In-Sun Park, Gyeonggi-Do KR
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20080230373 | METHODS OF FORMING A PHASE-CHANGE MATERIAL LAYER INCLUDING TELLURIUM AND METHODS OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME - The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided. | 09-25-2008 |
20140244906 | MEMORY, AND METHOD OF READING DATA FROM THE MEMORY - Disclosed is a method of reading data from a memory including a NAND cell array for performing communications via a serial peripheral interface (SPI) bus. The method includes sequentially receiving inputs of a block address, a word-line address, and a bit-line address of the NAND cell array; and starting to output data written in the NAND cell array immediately after the bit-line address is completely input. In this case, the sequential receiving of the inputs is performed via one input terminal. | 08-28-2014 |
In-Sun Park, Seoul KR
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20090053538 | INTERCONNECTION STRUCTURE HAVING OXYGEN TRAP PATTERN IN SEMICONDUCTOR DEVICE - An interconnection structure having an oxygen trap pattern in a semiconductor device, and a method of fabricating the same are provided. The interconnection structure includes a lower interlayer insulating layer formed on a semiconductor substrate. A metal layer pattern and a capping layer pattern are sequentially stacked on the lower interlayer insulating layer. An oxygen trap pattern is disposed on the capping layer pattern and includes a conductive oxygen trap pattern. | 02-26-2009 |
20110315225 | ELECTRON-DONATING POLYMERS AND ORGANIC SOLAR CELLS INCLUDING THE SAME - An electron-donating polymer including a repeating unit A with a repeating unit represented by Chemical Formula 1 and at least one of repeating units represented by Chemical Formulae 2-4. | 12-29-2011 |
20120007165 | SEMICONDUCTOR DEVICES - A semiconductor device includes a substrate, a plurality of gate structures, a first insulating interlayer pattern, and a second insulation layer pattern. The substrate has an active region and a field region, each of the active region and the field region extends in a first direction, and the active region and the field region are alternately and repeatedly arranged in a second direction substantially perpendicular to the first direction. The gate structures are spaced apart from each other in the first direction, each of the gate structures extends in the second direction. The first insulation layer pattern is formed on a portion of a sidewall of each gate structure. The second insulation layer pattern covers the gate structures and the first insulation layer pattern, and has an air tunnel between the gate structures, the air tunnel extending in the second direction. | 01-12-2012 |
20120112156 | Non-Volatile Memory Devices Having Resistance Changeable Elements And Related Systems And Methods - A non-volatile memory device may include a first wordline on a substrate, an insulating layer on the first wordline, and a second wordline on the insulating layer so that the insulating layer is between the first and second wordlines. A bit pillar may extend adjacent the first wordline, the insulating layer, and the second wordline in a direction perpendicular with respect to a surface of the substrate, and the bit pillar may be electrically conductive. In addition, a first memory cell may include a first resistance changeable element electrically coupled between the first wordline and the bit pillar, and a second memory cell may include a second resistance changeable element electrically coupled between the second wordline and the bit pillar. Related methods and systems are also discussed. | 05-10-2012 |
20120120728 | NON-VOLATILE MEMORY DEVICE - A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers. | 05-17-2012 |
20120193792 | SEMICONDUCTOR DEVICE CONDUCTIVE PATTERN STRUCTURES INCLUDING DUMMY CONDUCTIVE PATTERNS, AND METHODS OF MANUFACTURING THE SAME - Methods of forming conductive pattern structures form an insulating interlayer on a substrate that is partially etched to form a first trench extending to both end portions of a cell block. The insulating interlayer is also partially etched to form a second trench adjacent to the first trench, and a third trench extending to the both end portions of the cell block. The second trench has a disconnected shape at a middle portion of the cell block. A seed copper layer is formed on the insulating interlayer. Inner portions of the first, second and third trenches are electroplated with a copper layer. The copper layer is polished to expose the insulating interlayer to form first and second conductive patterns in the first and second trenches, respectively, and a first dummy conductive pattern in the third trench. Related conductive pattern structures are also described. | 08-02-2012 |
20130012023 | METHOD OF FORMING MICROPATTERN, METHOD OF FORMING DAMASCENE METALLIZATION, AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE FABRICATED USING THE SAME - According to example embodiments, a method of forming micropatterns includes forming dummy patterns having first widths on a dummy region of a substrate, and forming cell patterns having second widths on an active line region of the substrate. The active line region may be adjacent to the dummy region and the second widths may be less than the first widths. The method may further include forming damascene metallization by forming a seed layer on the active line region and the dummy region, forming a conductive material layer on a whole surface of the substrate, and planarizing the conductive material layer to form metal lines. | 01-10-2013 |
20130061928 | ORGANIC SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, an organic solar cell includes a first electrode, a second electrode on the first electrode, and a photoactive layer between the first electrode and the second electrode. The photoactive layer includes a photoactive material and an ultraviolet (UV) absorber. The ultraviolet (UV) absorber may be represented by Chemical Formula 1, disclosed herein. | 03-14-2013 |
20130087202 | ELECTRON DONATING POLYMER AND ORGANIC SOLAR CELL INCLUDING THE SAME - A polymer, and an organic solar cell including the polymer, include a repeating unit A represented by Chemical Formula 1, and a repeating unit B represented by Chemical Formula 2. | 04-11-2013 |
20130134494 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese. | 05-30-2013 |
20130267088 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming switching devices on a substrate. A lower structure is formed in the substrate having the switching devices. A lower conductive layer is formed on the lower structure. Sacrificial mask patterns are formed on the lower conductive layer. Lower conductive patterns are formed by etching the lower conductive layer using the sacrificial mask patterns as an etch mask. An interlayer insulating layer is formed on the substrate having the lower conductive patterns. Interlayer insulating patterns are formed by planarizing the interlayer insulating layer until the sacrificial mask patterns are exposed. Openings exposing the lower conductive patterns are formed by removing the exposed sacrificial mask patterns. Upper conductive patterns self-aligned with the lower conductive patterns are formed in the openings. | 10-10-2013 |
20140210055 | METHOD OF FORMING MICROPATTERN, METHOD OF FORMING DAMASCENE METALLIZATION, AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE FABRICATED USING THE SAME - According to example embodiments, a method of forming micropatterns includes forming dummy patterns having first widths on a dummy region of a substrate, and forming cell patterns having second widths on an active line region of the substrate. The active line region may be adjacent to the dummy region and the second widths may be less than the first widths. The method may further include forming damascene metallization by forming a seed layer on the active line region and the dummy region, forming a conductive material layer on a whole surface of the substrate, and planarizing the conductive material layer to form metal lines. | 07-31-2014 |
In-Sun Park, Suwon-Si KR
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20080308784 | VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME - Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer. | 12-18-2008 |
20090008623 | Methods of fabricating nonvolatile memory device and a nonvolatile memory device - Methods of fabricating a nonvolatile memory device using a resistance material and a nonvolatile memory device are provided. According to example embodiments, a method of fabricating a nonvolatile memory device may include forming at least one semiconductor pattern on a substrate, forming a metal layer on the at least one semiconductor pattern, forming a mixed-phase metal silicide layer, in which at least two phases coexist, by performing at least one heat treatment on the substrate so that the at least one semiconductor pattern may react with the metal layer, and exposing the substrate to an etching gas. | 01-08-2009 |
20100243982 | VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME - Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer. | 09-30-2010 |
In-Sun Ryu, Seoul KR
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20100295572 | UNIVERSAL TEST SOCKET AND SEMICONDUCTOR PACKAGE TESTING APPARATUS USING THE SAME - A universal test socket includes a housing frame including a side wall, an inner protruding portion protruding inwardly from the side wall, and a through window formed at a center portion of the housing frame, wherein the through window is surrounded by the side wall, a pin plate assembly coupled to the housing frame and including a pin plate in which a plurality of test pins are arranged and a plurality of guide pins formed on periphery of the pin plate, and a package guide portion coupled to the housing frame and located above the pin plate assembly, a semiconductor package to be tested being mounted on the package guide portion. When the pin plate assembly is coupled to the housing frame, the positions of the test pins arranged in the housing frame are varied according to a rotation angle of the pin plate assembly with respect to the housing frame. | 11-25-2010 |
In-Sun Son, Chuncheon-Si KR
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20130108977 | ORTHODONTIC APPLIANCES WITH A CURVE | 05-02-2013 |
In-Sun Song, Seoul KR
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20150127647 | ELEMENT COMPUTATION-COMMUNICATION PARALLELIZATION METHOD IMPLEMENTED ON CUBED-SPHERE GRIDS BASED ON SPECTRAL ELEMENT METHOD AND HARDWARE DEVICE PERFORMING THE SAME - A method of parallelizing computation in an element and communication between elements in a cubed-sphere coordinates system based on a spectral element method is disclosed. The method is performed in a hardware device including a computation part, a memory and a communication buffer. A first grid value at a first grid point in a first element among elements within group of a first group is computed according to a predetermined numerical equation substantially at the same time as a second grid value at a second grid point in a second element of the first group is sent to or received from the communication buffer. | 05-07-2015 |
In-Sun Song, Daejeon KR
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20140069183 | METHOD OF REDUCING UNCERTAINTY IN PRESSURE PULSE-DECAY MEASUREMENT - Disclosed is a method of reducing uncertainty, which exactly finds the hydraulic conductivity and the specific storativity of a rock sample in pressure pulse-decay measurement. Axial and confining pressures are applied to the rock sample, and upstream and downstream reservoirs are connected to the rock sample. Coordinate values representing minimum values of a contour of a graph of an objective function, in which the hydraulic conductivity and the specific storativity obtained through the pressure pulse-decay measurement scheme to apply pressure pulses from the outside are expressed in horizontal and vertical axes are found from the graph. The coordinate values are set as the hydraulic conductivity and the specific storativity of the rock sample. Graphs of objective functions obtained by repeating the pressure pulse-decay measurement while changing boundary conditions are shown in overlapped, thereby reducing the uncertainty of the hydraulic conductivity and the specific storativity of the rock sample. | 03-13-2014 |
In-Sun Yoo, Paju-Si KR
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20100141124 | Blue fluorescent compound and organic electroluminescent device using the same - A blue fluorescent compound includes a host material being capable of transporting an electron or a hole; and a dopant material represented by following Formula 1: | 06-10-2010 |
In-Sun Yoo, Daejeon KR
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20150024255 | SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF - The present disclosure discloses a secondary battery and a manufacturing method thereof. According to the present disclosure, the influence of heat generated at a welding spot between an electrode tab and an electrode lead on the performance of a secondary battery may be minimized. Accordingly, in the design of a large capacity secondary battery, the battery performance may be close to an ideal condition. | 01-22-2015 |