Patent application number | Description | Published |
20080308057 | Electrode for an Ignition Device - An electrode for an ignition device is made from a dilute nickel alloy which has improved resistance to high temperature oxidation, sulfidation, corrosive wear, deformation and fracture and includes at least 90% by weight of nickel; zirconium; boron and at least one element from the group consisting of aluminum, magnesium, silicon, chromium, titanium and manganese. The weight ratio of Zr/B may range from about 0.5 to 150, and may include amounts of, by weight of the alloy, 0.05-0.5% zirconium and 0.001-0.01% boron. The oxidation resistance of the alloy may also be improved by the addition of hafnium to the alloy in an amount that is comparable to the amount of zirconium, which may include an amount of, by weight of the alloy, 0.005-0.2% hafnium. Electrodes of dilute nickel alloys which include aluminum and silicon, as well as those which include chromium, silicon, manganese and titanium, are particularly useful as spark plug electrodes. These electrode alloys of the may also include at least one of cobalt, niobium, vanadium, molybdenum, tungsten, copper, iron, carbon, calcium, phosphorus or sulfur as trace elements, generally with specified maximum amounts. The ignition device may be a spark plug which includes a ceramic insulator, a conductive shell, center electrode and ground electrode. The center electrode, ground electrode, or both, may be made from the dilute nickel alloy of the invention. These electrodes may also include a core with thermal conductivity greater than that of the dilute nickel alloy, such as copper or silver or their alloys. | 12-18-2008 |
20090107440 | Electrode For An Ignition Device - An electrode for an ignition device is made from a dilute nickel alloy which has improved resistance to high temperature oxidation, sulfidation, corrosive wear, deformation and fracture and includes at least 90% by weight of nickel; zirconium; boron and at least one element from the group consisting of aluminum, magnesium, silicon, chromium, titanium and manganese. The weight ratio of Zr/B may range from about 0.5 to 150, and may include amounts of, by weight of the alloy, 0.05-0.5% zirconium and 0.001-0.01% boron. The oxidation resistance of the alloy may also be improved by the addition of hafnium to the alloy in an amount that is comparable to the amount of zirconium, which may include an amount of, by weight of the alloy, 0.005-0.2% hafnium. Electrodes of dilute nickel alloys which include aluminum and silicon, as well as those which include chromium, silicon, manganese and titanium, are particularly useful as spark plug electrodes. These electrode alloys of the may also include at least one of cobalt, niobium, vanadium, molybdenum, tungsten, copper, iron, carbon, calcium, phosphorus or sulfur as trace elements, generally with specified maximum amounts. The ignition device may be a spark plug which includes a ceramic insulator, a conductive shell, center electrode and ground electrode. The center electrode, ground electrode, or both, may be made from the dilute nickel alloy of the invention. These electrodes may also include a core with thermal conductivity greater than that of the dilute nickel alloy, such as copper or silver or their alloys. | 04-30-2009 |
20100175654 | Electrode for an Ignition Device - An electrode for an ignition device is made from a dilute nickel alloy which has improved resistance to high temperature oxidation, sulfidation, corrosive wear, deformation and fracture and includes at least 90% by weight of nickel; zirconium; boron and at least one element from the group consisting of aluminum, magnesium, silicon, chromium, titanium and manganese. The weight ratio of Zr/B may range from about 0.5 to 150, and may include amounts of, by weight of the alloy, 0.05-0.5% zirconium and 0.001-0.01% boron. The oxidation resistance of the alloy may also be improved by the addition of hafnium to the alloy in an amount that is comparable to the amount of zirconium, which may include an amount of, by weight of the alloy, 0.005-0.2% hafnium. Electrodes of dilute nickel alloys which include aluminum and silicon, as well as those which include chromium, silicon, manganese and titanium, are particularly useful as spark plug electrodes. These electrode alloys of the may also include at least one of cobalt, niobium, vanadium, molybdenum, tungsten, copper, iron, carbon, calcium, phosphorus or sulfur as trace elements, generally with specified maximum amounts. The ignition device may be a spark plug which includes a ceramic insulator, a conductive shell, center electrode and ground electrode. The center electrode, ground electrode, or both, may be made from the dilute nickel alloy of the invention. These electrodes may also include a core with thermal conductivity greater than that of the dilute nickel alloy, such as copper or silver or their alloys. | 07-15-2010 |
Patent application number | Description | Published |
20090305452 | Methods of Making Quantum Dot Films - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. | 12-10-2009 |
20100044676 | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 02-25-2010 |
20100133418 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. | 06-03-2010 |
20100314529 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. | 12-16-2010 |
20110315959 | ELECTRONIC AND OPTOELECTRONIC DEVICES WITH QUANTUM DOT FILMS - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. | 12-29-2011 |
20120100699 | METHODS OF MAKING QUANTUM DOT FILMS - In an example embodiment, an optical device includes an integrated circuit, an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region. In another example embodiment, a method of forming a nanocrystalline film includes fabricating nanocrystals having a plurality of first ligands attached to their outer surfaces, exchanging the first ligands for second ligands of a different chemical composition, forming a film of the ligand-exchanged nanocrystals, removing the second ligands, and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. In another example embodiment, a film includes a network of fused nanocrystals with at least portions of the fused nanocrystals being in direct physical contact with adjacent nanocrystals, the film having substantially no defect states in regions where cores of the nanocrystals are fused. | 04-26-2012 |
20120145884 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiments include apparatuses including optical and optoelectronic devices and methods of making same. One such device includes an image sensor having an integrated circuit with a number of pixel electrodes, a substantially-continuous optically-sensitive layer, and at least one counter-electrode. The substantially continuous optically sensitive layer is in electrical communication with both the number of pixel electrodes and also the counter-electrode. Additional apparatuses and methods are disclosed. | 06-14-2012 |
20120205624 | PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 08-16-2012 |
20120208315 | THREE-DIMENSIONAL BICONTINUOUS HETEROSTRUCTURES, METHOD OF MAKING, AND THEIR APPLICATION IN QUANTUM DOT-POLYMER NANOCOMPOSITE PHOTODETECTORS AND PHOTOVOLTAICS - Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor. | 08-16-2012 |
20130001520 | PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 01-03-2013 |
20130009129 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described. | 01-10-2013 |
20130228749 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described. | 09-05-2013 |
20130244366 | THREE-DIMENSIONAL BICONTINUOUS HETEROSTRUCTURES, METHOD OF MAKING, AND THEIR APPLICATION IN QUANTUM DOT-POLYMER NANOCOMPOSITE PHOTODETECTORS AND PHOTOVOLTAICS - The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor. | 09-19-2013 |
20140291608 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described. | 10-02-2014 |
20150144879 | PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 05-28-2015 |
20150280033 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described. | 10-01-2015 |