Patent application number | Description | Published |
20080306473 | Tissue-treating device with medium-control mechanism - Disclosed is a tissue-treating device. The device includes a waveguide to guide light, and a medium-control mechanism to change a medium disposed near an area of a tissue to which light from the waveguide is applied. The medium-control mechanism to change the medium may be configured to change the medium such that light energy applied to the area of the tissue with the changed medium results in changes to the area of the tissue that are different from changes to the area of the tissue resulting from application of light energy to the area without changing the medium. | 12-11-2008 |
20110172649 | METHOD AND SYSTEM FOR MODIFYING EYE TISSUE AND INTRAOCULAR LENSES - As shown in the drawings for purposes of illustration, a method and system for making physical modifications to intraocular targets is disclosed. In varying embodiments, the method and system disclosed herein provide many advantages over the current standard of care. Specifically, linear absorption facilitated photodecomposition and linear absorption facilitated plasma generation to modify intraocular tissues and synthetic intraocular lenses. | 07-14-2011 |
20110184395 | METHOD FOR LASER CAPSULOTOMY AND LENS CONDITIONING - A method of creating a capsulotomy and conditioning the crystalline lens is disclosed, wherein a laser is employed that provides improved performance by treating the capsule predominantly prior to treating the lens. | 07-28-2011 |
20110196350 | SYSTEM AND METHOD FOR PLASMA-MEDIATED MODIFICATION OF TISSUE - A system for cataract surgery on an eye of a patient is described. In one embodiment, the system comprises a first laser source configured to deliver a first laser beam in a pulsed form at a first pulse energy; a second laser source configured to deliver a second laser beam in a pulsed form at a second pulse energy greater than the first pulse energy; an scanning optical system, configured to: receive the first and second laser beams; and adjust a first focus position of the first laser beam, and a second focus position of the second laser beam, in up to three dimensions to direct the first and second laser beams onto one or more targeted tissue structure portions of the eye of the patient; a controller operatively coupled to the scanning optical system and configured to cause the scanning optical system to adjust the first focus position to photodisrupt a first tissue structure portion with the first laser beam, and subsequently adjust the second focus position to further photodisrupt the first tissue structure portion with the second laser beam. | 08-11-2011 |
20140276681 | MICROFEMTOTOMY METHODS AND SYSTEMS - Methods and systems for performing laser-assisted surgery on an eye form one or more small anchoring capsulotomies in the lens capsule of the eye. The one or more anchoring capsulotomies are configured to accommodate corresponding anchoring features of an intraocular lens and/or to accommodate one or more drug-eluting members. A method for performing laser-assisted eye surgery on an eye having a lens capsule includes forming an anchoring capsulotomy in the lens capsule and coupling an anchoring feature of the intraocular lens with the anchoring capsulotomy. The anchoring capsulotomy is formed by using a laser to incise the lens capsule. The anchoring feature can protrude transverse to a surface of the intraocular lens that interfaces with the lens capsule adjacent to the anchoring capsulotomy. | 09-18-2014 |
20140316389 | LASER EYE SURGERY SYSTEM - An imaging system includes an eye interface device, a scanning assembly, a beam source, a free-floating mechanism, and a detection assembly. The eye interface device interfaces with an eye. The scanning assembly supports the eye interface device and scans a focal point of an electromagnetic radiation beam within the eye. The beam source generates the electromagnetic radiation beam. The free-floating mechanism supports the scanning assembly and accommodates movement of the eye and provides a variable optical path for the electronic radiation beam and a portion of the electronic radiation beam reflected from the focal point location. The variable optical path is disposed between the beam source and the scanner and has an optical path length that varies to accommodate movement of the eye. The detection assembly generates a signal indicative of intensity of a portion of the electromagnetic radiation beam reflected from the focal point location. | 10-23-2014 |
20150018674 | CORNEAL TOPOGRAPHY MEASUREMENT AND ALIGNMENT OF CORNEAL SURGICAL PROCEDURES - Methods and apparatus are configures to measure an eye without contacting the eye with a patient interface, and these measurements are used to determine alignment and placement of the incisions when the patient interface contacts the eye. The pre-contact locations of one or more structures of the eye can be used to determine corresponding post-contact locations of the one or more optical structures of the eye when the patient interface has contacted the eye, such that the laser incisions are placed at locations that promote normal vision of the eye. The incisions are positioned in relation to the pre-contact optical structures of the eye, such as an astigmatic treatment axis, nodal points of the eye, and visual axis of the eye. | 01-15-2015 |
Patent application number | Description | Published |
20080246088 | Self-Aligned Lightly Doped Drain Recessed-Gate Thin-Film Transistor - A recessed-gate thin-film transistor (RG-TFT) with a self-aligned lightly doped drain (LDD) is provided, along with a corresponding fabrication method. The method deposits an insulator overlying a substrate and etches a trench in the insulator. The trench has a bottom and sidewalls. An active silicon (Si) layer is formed overlying the insulator and trench, with a gate oxide layer over the active Si layer. A recessed gate electrode is then formed in the trench. The TFT is doped and LDD regions are formed in the active Si layer overlying the trench sidewalls. The LDD regions have a length that extends from a top of the trench sidewall, to the trench bottom, with a doping density that decreases in response to the LDD length. Alternately stated, the LDD length is directly related to the depth of the trench. | 10-09-2008 |
20080272816 | Inverter with Four-Transistor Schmitt Trigger - A four-transistor Schmitt trigger inverter is provided. The Schmitt trigger inverter is made from an n-channel MOS (NMOS) dual-gate thin-film transistor (DG-TFT) and a p-channel MOS (PMOS) DG-TFT, both DG-TFTs having a top gate, a back gate, and source/drain regions. A (conventional) NMOS TFT has a gate connected to an NMOS DG-TFT first S/D region and a PMOS DG-TFT first S/D region. The NMOS TFT also has a first S/D region connected to the NMOS DG-TFT back gate and the PMOS DG-TFT back gate. A (conventional) PMOS TFT has a gate connected to the NMOS TFT gate, and a first S/D region connected to the NMOS TFT first S/D region. | 11-06-2008 |
20100117704 | Four-Transistor Schmitt Trigger Inverter with Hysteresis - A four-transistor Schmitt trigger inverter is provided. The Schmitt trigger inverter is made from an n-channel MOS (NMOS) dual-gate thin-film transistor (DG-TFT) and a p-channel MOS (PMOS) DG-TFT, both DG-TFTs having a top gate, a back gate, and source/drain regions. A (conventional) NMOS TFT has a gate connected to an NMOS DG-TFT first S/D region and a PMOS DG-TFT first S/D region. The NMOS TFT also has a first S/D region connected to the NMOS DG-TFT back gate and the PMOS DG-TFT back gate. A (conventional) PMOS TFT has a gate connected to the NMOS TFT gate, and a first S/D region connected to the NMOS TFT first S/D region. | 05-13-2010 |
20100197065 | Piezo-Diode Cantilever MEMS Fabrication Method - A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam. | 08-05-2010 |
20100236613 | Single Heterojunction Back Contact Solar Cell - A back contact single heterojunction solar cell and associated fabrication process are provided. A first semiconductor substrate is provided, lightly doped with a first dopant type. The substrate has a first energy bandgap. A second semiconductor is formed over a region of the substrate backside. The second semiconductor has a second energy bandgap, larger than the first energy bandgap. A third semiconductor layer is formed over the first semiconductor substrate topside, moderately doped with the first dopant and textured. An emitter is formed in the substrate backside, heavily doped with a second dopant type, opposite of the first dopant type, and a base is formed in the substrate backside, heavily doped with the first dopant type. Electrical contacts are made to the base and emitter. Either the emitter or base is formed in the second semiconductor. | 09-23-2010 |
20110281368 | NANOPARTICLE DERIVATIZATION OF TARGETS FOR DETECTING AND DETERMINING THE CONCENTRATIONS OF TARGETS BY IMPEADANCE-SPECTROSCOPY-BASED SENSORS - Embodiments of the present invention are directed to for detecting the presence and concentration of one or more particular target molecules in solutions, air or other gasses, or otherwise present in an environment or sample, by impedance-spectroscopy-based sensors. Various embodiments of the present invention provide for derivatizing target molecules with nanoparticles to increase capacitance changes at electrode surfaces in order to generate stronger signals and improve signal-to-noise ratios of impedance-spectroscopy-based sensors. | 11-17-2011 |
20120168711 | Narrow-Waist Nanowire Transistor with Wide Aspect Ratio Ends - A method is provided for forming narrow-waist nanowire (NW) transistors with wide aspect ratio ends. The method provides a semiconductor-on-insulator wafer. The top semiconductor layer is etched to form a first pad, a second pad, and a plurality of narrow-waist semiconductor bridges. Each semiconductor bridge has two ends, each with a first width, attached to the first and second pads, and a mid-section less than the first width. A channel is formed in a center portion of each mid-section, a drain interposed between the channel and the first end, a source interposed between the channel and the second end, and a gate dielectric surrounding the channel and adjacent portions of the source and drain. A gate electrode is formed surrounding the gate dielectric. The semiconductor bridge ends are etched from the first and second pads, forming a plurality of narrow-waist semiconductor NW transistors. | 07-05-2012 |
20120200817 | Plasmonic Reflective Display Fabricated using Anodized Aluminum Oxide - A method is provided for forming a reflective plasmonic display. The method provides a substrate and deposits a bottom dielectric layer. A conductive film is deposited overlying the bottom dielectric layer. A hard mask is formed with nano-size openings overlying the conductive film. The conductive film is plasma etched via nano-size openings in the hard mask, stopping at the dielectric layer. After removing the hard mask, a conductive film is left with nano-size openings to the dielectric layer. Metal is deposited in the nano-size openings, creating a pattern of metallic nanoparticles overlying the dielectric layer. Then, the conductive film is removed. The hard mask may be formed by conformally depositing an Al film overlying the conductive film and anodizing the Al film, creating a hard mask of porous anodized Al oxide (AAO) film. The porous AAO film may form a short-range hexagonal, and long-range random order hole patterns. | 08-09-2012 |
20120211063 | Back Contact Solar Cell with Organic Semiconductor Heterojunctions - A back contact solar cell with organic semiconductor heterojunctions is provided. The substrate is made from silicon lightly doped with a first dopant type having a first majority carrier. A second semiconductor layer is formed overlying the texturized substrate topside, made from hydrogenated amorphous silicon (a-Si:H) and doped with the first dopant. An antireflective coating is formed overlying the second semiconductor layer. A third semiconductor layer is formed overlying the first semiconductor substrate backside, made from intrinsic a-Si:H. First and second majority carrier type organic semiconductor layers are formed overlying the third semiconductor layer in patterns. A dielectric organic semiconductor layer is formed overlying the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, filling the spaces in the pattern. A first metal grid is connected to first organic semiconductor contact regions and a second metal grid is connected to the second organic semiconductor contact regions. | 08-23-2012 |
20120245049 | System and Method for Pixelated Fluid Assay - A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment. | 09-27-2012 |
20130161584 | Light Emitting Diode (LED) Using Three-Dimensional Gallium Nitride (GaN) Pillar Structures with Planar Surfaces - A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer. | 06-27-2013 |
20130161643 | Method for Fabricating Three-Dimensional Gallium Nitride Structures with Planar Surfaces - A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family. | 06-27-2013 |
20140077158 | Light Emitting Diode (LED) using Three-Dimensional Gallium Nitride (GaN) Pillar Structures - A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer. | 03-20-2014 |
20140198072 | In-Pixel Ultrasonic Touch Sensor for Display Applications - A video display is provided with a planar piezoelectric transmitter to transmit ultrasound signals, and a display panel including a plurality of pixels. Each pixel has a data interface to accept a video signal with a variable voltage associated with a range of light intensity values, and to supply a touch signal with a variable voltage derived from a range of reflected ultrasound signal energies. Each pixel is made up of a light device to supply light with an intensity responsive to the video signal voltage, and a storage capacitor to maintain a video signal voltage between refresh cycles. A piezoelectric transducer accepts a reflected ultrasound signal energy and maintains a touch signal voltage between refresh cycles. In one aspect, the storage capacitor and the piezoelectric transducer are the same device. The light device may be a liquid crystal (LC) layer or a light emitting diode. | 07-17-2014 |