Patent application number | Description | Published |
20080304411 | Bandwidth control system and method capable of reducing traffic congestion on content servers - A bandwidth control system controls the bandwidths used by plural web crawlers. The bandwidth control system receives a connection request from one of the web crawlers for establishing a connection between that web crawler and a content server. The control system records each of the web crawlers in association with a content server to which that web crawler is connected. The control system monitors the traffic on the content servers to which the web crawlers are connected. When the traffic on the content server recorded becomes too heavy, the control system disconnects the web crawler from the content server to which the crawler is connected. | 12-11-2008 |
20090180393 | Sampling apparatus distinguishing a failure in a network even by using a single sampling and a method therefor - A network analyzer includes a sampler and a network anomaly detector. The sampler acquires communication data flowing through nodes by a data collector, estimates a topology of the nodes based on the acquired communication data by a topology estimator, stores the estimated topology of the nodes in a storage, reads out the estimated result from the storage to generate a predetermined item for each read-out topology of the nodes as a sampling rule by a rule generator, and samples the supplied communication data based on the generated sampling rule by a packet sampler. The topology of the network is thereby estimated in advance to narrow down objects to be sampled. The behavior of the communication data can thus be grasped in correlation between a target network and other networks. | 07-16-2009 |
20090245247 | COMMUNICATION TERMINAL AND COMMUNICATION NETWORK - Routing schemes are provided for a communication network. In one scheme, destination terminals and associated neighboring terminals are listed in a routing control cache at each communication terminal in the network, and packets are routed toward the destination terminal through the associated neighboring terminals. In another scheme, a single path from a source terminal to a destination terminal is automatically expanded into multiple paths. In yet another scheme, packets are routed as long as this does not increase the number of hops to the destination terminal. These schemes enable multiple paths to be established by a simple procedure not requiring complex distance calculations. In still another scheme, routing is restricted to the shortest path and paths up to a given number of hops longer than the shortest path, permitting paths to diverge in multiple directions from the source and destination terminals. | 10-01-2009 |
20100195520 | Apparatus for detecting quality deterioration of a telecommunications network by discriminating periodic faults - An apparatus for detecting deterioration in quality of a telecommunications network includes a packet monitor for monitoring a packet flowing through the network, a quality information extractor for extracting the quality index of the network on the basis of the packet monitored, a quality deterioration detector for detecting deterioration in quality of the network on the basis of the quality index. The quality deterioration detector determines, for the packet monitored and coming only from a wired line, that the quality of the network is deteriorated if the quality index decreases, and determines, for the packet monitored and coming from a wireless line, that the quality of the network is deteriorated if the quality index aperiodically decreases. | 08-05-2010 |
20100223455 | Encrypted-traffic discrimination device and encrypted-traffic discrimination system - An encrypted-traffic discrimination device includes an input interface, a flow discrimination section, a data accumulation section, a selective data calculation section, a calculation result determination section, and an output interface. The flow discrimination section discriminates the input traffic into separate flows based on at least a transmission origin address and a transmission destination address. The data accumulation section accumulates characteristic amount data of the traffic for each of the separate flows. The selective data calculation section executes an evaluation computation utilizing specific data from the characteristic amount data. The calculation result determination section that, based on a calculated evaluation computation value, executes threshold value determination to determine whether or not the traffic is encrypted, and, if the traffic is determined to be encrypted, which encryption format the traffic is encrypted with. | 09-02-2010 |
20110078237 | Server, network device, client, and network system - A server in a network system generates packets including payload data and at least one capability field, and sends the packets on a traffic path in a communication network. The capability field may indicate the capability of the server to provide the payload data, as determined by the server itself, or the capability of the traffic path to transfer the packets. In the latter case, network devices that transfer the packets update the capability field, or add a new capability field reporting their individual packet transfer capability. A client device receiving the packets can use the information in the capability field(s) to isolate quality problems to the server or the communication network, or to specific network devices in the communication network, and take appropriate action such as canceling a service request or reducing the requested level of service. | 03-31-2011 |
20110249216 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal panel ( | 10-13-2011 |
Patent application number | Description | Published |
20090260729 | HIGH-CARBON HOT-ROLLED STEEL SHEET AND METHOD FOR PRODUCING THE SAME - A high-carbon hot-rolled steel sheet with excellent width-direction homogeneity is provided. The steel sheet contains 0.2% to 0.7% carbon, 0.01% to 1.0% silicon, 0.1% to 1.0% manganese, 0.03% or less phosphorus, 0.035% or less sulfur, 0.08% or less aluminum, and 0.01% or less nitrogen, and the balance is iron and incidental impurities. The structure is such that the average ferrite grain size of edge parts of the steel sheet is less than 35 μm, the average ferrite grain size of a part closer to the center of the steel sheet than the edge parts is less than 20 μm, and the average carbide grain size is 0.10 μm or more and less than 2.0 μm. The steel sheet is produced by roughly rolling the steel, finish-rolling the steel at a finishing temperature of more than (Ar3+40° C.), cooling the steel at a cooling rate of more than 120° C./s within two seconds after the finish rolling to a cooling termination temperature of more than 550° C. and less than 650° C., coiling the steel at a temperature of 550° C. or less, pickling the steel, and subjecting the steel to spheroidizing annealing at a temperature of 670° C. to the Ac1 transformation point by a batch annealing method. | 10-22-2009 |
20110048588 | COLD-ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - A cold-rolled steel sheet has a partially recrystallized grain structure with a degree of unrecrystallization of 25% to 90% and a Rockwell hardness HRB of 83 or more, the cold-rolled steel sheet containing 0.01% to 0.15% C, 0.03% or less Si, 0.10% to 0.70% Mn, 0.025% or less P, 0.025% or less S, 0.01% to 0.05% Al, and 0.008% or less N on a mass basis, the remainder being Fe and unavoidable impurities, wherein the mean diameter of ferrite is 2 to 10 μm and these components satisfy Formula (1): (C %)+0.15×(Mn %)+0.85×(P %)≧0.21, wherein (M %) represents the content (mass percent) of an element M. | 03-03-2011 |
Patent application number | Description | Published |
20090189248 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region. | 07-30-2009 |
20100196189 | HIGH-STRENGTH STEEL SHEET - A high-strength steel sheet has high stretch flangeability after working and corrosion resistance after painting. The steel sheet contains, on the basis of mass percent, C: 0.02% to 0.20%, Si: 0.3% or less, Mn: 0.5% to 2.5%, P: 0.06% or less, S: 0.01% or less, Al: 0.1% or less, Ti: 0.05% to 0.25%, and V: 0.05% to 0.25%, the remainder being Fe and incidental impurities. The steel sheet has a substantially ferritic single phase, the ferritic single phase containing precipitates having a size of less than 20 nm, the precipitates containing 200 to 1750 mass ppm Ti and 150 to 1750 mass ppm V, V dissolved in solid solution being 200 or more but less than 1750 mass ppm. | 08-05-2010 |
20100282376 | ULTRA SOFT HIGH CARBON HOT ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING SAME - An ultra soft high carbon hot-rolled steel sheet has excellent workability. The steel sheet is a high carbon hot-rolled steel sheet containing 0.2 to 0.7% C, and has a structure in which mean grain size of ferrite is 20 μm or larger, the volume percentage of ferrite grains having 10 μm or smaller size is 20% or less, mean diameter of carbide is in a range from 0.10 μm to smaller than 2.0 μm, the percentage of carbide grains having 5 or more of aspect ratio is 15% or less, and the contact ratio of carbide is 20% or less. | 11-11-2010 |
20110018066 | Semiconductor device and method of manufacturing the same - A semiconductor device includes an antifuse element. The semiconductor device includes a first well of a first conductivity type disposed in a semiconductor substrate; a first insulating film on the first well; a first conductive film of the first conductivity type on the first insulating film; and an impurity-introduced region of the first conductivity type. The impurity-introduced region of the first conductivity type in the first well is higher in impurity concentration than the first well. The impurity-introduced region includes a first portion that faces toward the first conductive film through the first insulating film. | 01-27-2011 |
20120018062 | METHOD OF HOT-ROLLED THIN STEEL SHEET WITH EXCELLENT FORMABILITY AND EXCELLENT STRENGTH AND TOUGHNESS AFTER HEAT TREATMENT - A method of manufacturing a hot-rolled thin steel sheet includes: hot-rolling a steel base material having a composition containing, as mass %, C: 0.10 to 0.20%, Si: 0.01 to 1.0%, Mn: 0.5 to 2.0%, P: 0.03% or less, S: 0.01% or less, Al: 0.01 to 0.10%, N: 0.005% or less, Ti: 0.01 to 0.15%, B: 0.0005 to 0.0050%, the balance of Fe, and unavoidable impurities at a finishing temperature of finish rolling of 820 to 880° C. to produce a hot-rolled steel sheet with a thickness of less than 6 mm; cooling the hot-rolled steel sheet to a temperature range on a surface of the hot-rolled steel sheet to 550 to 650° C. at a surface cooling rate of 15 to 50° C. per second; and coiling the hot-rolled steel sheet at the temperature range. | 01-26-2012 |
20120018841 | SEMICONDUCTOR DEVICE - A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region. | 01-26-2012 |
20120091520 | SEMICONDUCTOR DEVICE, METHOD FOR FORMING THE SAME, AND DATA PROCESSING SYSTEM - A semiconductor device includes a semiconductor substrate, a first interlayer insulating film over the semiconductor substrate, a first interconnect over the first interlayer insulating film, and a via plug penetrating the semiconductor substrate and the first interlayer insulating film. The via plug is coupled to the first interconnect. | 04-19-2012 |
20120256300 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor. | 10-11-2012 |
20130020721 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate, a through silicon via that penetrates through the semiconductor substrate in a thickness direction thereof, a first insulating region, a second insulating region formed below the first principal surface of the semiconductor substrate, and an isolation region made of an insulating material buried in a second trench formed below the first principal surface of the semiconductor substrate. The first insulating region is made of an insulating material buried in a first groove that surrounds the through silicon via and penetrates through the semiconductor substrate from a first principal surface thereof to a second principal surface thereof. The second insulating region is deeper than the second trench and shallower than the first trench. | 01-24-2013 |
20130026599 | SEMICONDUCTOR DEVICE - A semiconductor device includes an isolation portion penetrating a semiconductor substrate from a first surface to a second surface positioned opposite the first surface. The isolation portion includes a first insulating film and a second insulating film. The first insulating film has a slit portion at a side of the first surface and the slit portion is buried with the second insulating film. The semiconductor device further includes an electrode penetrating the semiconductor substrate that is surrounded by the isolation portion. | 01-31-2013 |
20130061989 | HIGH STRENGTH HOT-ROLLED STEEL SHEET HAVING EXCELLENT STRETCH FLANGEABILITY AND FATIGUE RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - A high strength hot-rolled steel sheet has a tensile strength of not less than 780 MPa and exhibits excellent stretch flangeability and excellent fatigue resistance. A steel has a composition containing C at 0.05 to 0.15%, Si at 0.2 to 1.2%, Mn at 1.0 to 2.0%, P at not more than 0.04%, S at not more than 0.005%, Ti at 0.05 to 0.15%, Al at 0.005 to 0.10% and N at not more than 0.007%. | 03-14-2013 |
20130313689 | SEMICONDUCTOR DEVICE - In a connecting portion between an interconnection and a first bump which is a part of a through electrode penetrating a semiconductor chip and which penetrates a semiconductor substrate, a protruding portion protruding from the interconnection to the side of the first bump is provided. The protruding portion may be made of an insulating material and may be made of a conductive material. | 11-28-2013 |
20140183705 | SEMICONDUCTOR DEVICE WITH THROUGH SILICON VIA AND ALIGNMENT MARK - A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor. | 07-03-2014 |
20150206827 | SEMICONDUCTOR DEVICE WITH THROUGH SILICON VIA AND ALIGNMENT MARK - A semiconductor device with a semiconductor substrate having a first surface and an opposite-facing second surface, a through electrode electrically connected to the semiconductor element and penetrating the semiconductor substrate from the first surface to the second surface, and a conductor, not electrically connected to the semiconductor element, penetrating the semiconductor substrate from the first surface to the second surface, where the through electrode and the conductor have different shapes in plan view. | 07-23-2015 |
Patent application number | Description | Published |
20090065106 | Ultra soft high carbon hot-rolled steel sheets and manufacturing method thereof - The present invention provides an ultra soft high carbon hot-rolled steel sheet. The ultra soft high carbon hot-rolled steel sheet contains 0.2% to 0.7% of C, 0.01% to 1.0% of Si, 0.1% to 1.0% of Mn, 0.03% or less of P, 0.035% or less of S, 0.08% or less of Al, 0.01% or less of N, and the balance being Fe and incidental impurities and further contains 0.0010% to 0.0050% of B and 0.05% to 0.30% of Cr in some cases. In the texture of the steel sheet, an average ferrite grain diameter is 20 μm or more, a volume ratio of ferrite grains having a grain diameter of 10 μm or more is 80% or more, and an average carbide grain diameter is in the range of 0.10 to less than 2.0 μm. In addition, the steel sheet is manufactured by the steps, after rough rolling, performing finish rolling at a reduction ratio of 10% or more and at a finish temperature of (Ar | 03-12-2009 |
20090100767 | AUDIO-VISUAL SYSTEM - There is a need for being able to excellently audiovisually receive contents without disordering a room atmosphere. An audiovisual room | 04-23-2009 |
20090173415 | Steel Sheet Excellent In Fine Blanking Performance and Manufacturing Method of the Same - A steel sheet excellent in FB performance-and also excellent in fabrication performance after FB working and a manufacturing method of the same are provided. The steel sheet is a steel sheet having a composition containing from 0.1 to 0.5% of C, not more than 0.5% of Si and from 0.2 to 1.5% of Mn in terms of % by mass, with P and S being adjusted at proper ranges, and having a structure in which a ferrite has an average grain size of from 1 to 10 μm, cementite has a spheroidization ratio of 80% or more, and of the cementite, an amount S | 07-09-2009 |
20090205756 | HOT-ROLLED THIN STEEL SHEET WITH EXCELLENT FORMABILITY AND EXCELLENT STRENGTH AND TOUGHNESS AFTER HEAT TREATMENT, AND METHOD FOR MANUFACTURING THE SAME - Provided is a hot-rolled thin steel sheet having a thickness of less than 6 mm and having high strength showing a tensile strength of 440 MPa or more, excellent formability, and excellent strength and toughness after heat treatment and a method of manufacturing the same. A steel base material containing 0.10 to 0.20% of C, and Si, Mn, Al, P, S, and N adjusted to suitable amount ranges, and 0.01 to 0. 15% of Ti and 0.0005 to 0.0050% of B is hot rolled so as to have a finishing temperature of finish rolling of 820 to 880° C.; after the completion of the rolling, the hot-rolled thin steel sheet is cooled to a surface temperature range of 550 to 650° C. at a surface cooling rate of 15 to 50° C./s; and the hot-rolled thin steel sheet is coiled at the temperature range. | 08-20-2009 |
20090308504 | STEEL SHEET EXCELLENT IN FINE BLANKING PERFORMANCE AND MANUFACTURING METHOD OF THE SAME - A steel sheet excellent in FB performance and also excellent in fabrication performance after FB working and a manufacturing method of the same are provided. The steel sheet is a steel sheet having a composition containing from 0.1 to 0.5% of C, not more than 0.5% of Si and from 0.2 to 1.5% of Mn in terms of % by mass, with P and S being adjusted at proper ranges and having a structure having a ferrite having an average grain size of more than 10 μm and less than 20 μm and a cementite present in the ferrite grain having an average particle size of from 0.3 to 1.5 μm. In this way, the steel sheet becomes a steel sheet excellent in FB performance, mold life and performance (side bend elongation) after FB working. | 12-17-2009 |
20110008832 | METHODS FOR STABLY RETAINING FOREIGN GENES IN CELLS - A method for preparing a protein or peptide encoded by a foreign gene by expressing a foreign gene, which comprises the steps of: preparing a recombinant vector comprising in an expressible state a gene encoding an aminoacyl-tRNA synthetase, in which a desired foreign gene has been inserted in an expressible state; preparing a mutant host cell or the like in which a chromosomal gene encoding an aminoacyl-tRNA synthetase has been knocked out; transforming the mutant host cell with the recombinant vector to obtain a transformant; and culturing the transformant to prepare the protein or peptide encoded by the foreign gene. It becomes possible to provide a novel means for permitting the retention of a recombinant DNA cloning vector without employing an antibiotic and without limiting the composition of the medium; and a method for preparing a protein or peptide encoded by a foreign gene by using the means. | 01-13-2011 |
20120313946 | DISPLAY SWITCHING APPARATUS, DISPLAY SWITCHING METHOD, AND DISPLAY SWITCHING PROGRAM - Provided is a display switching apparatus including an operation unit used to instruct a display unit to switch a display of a display image having a background image, and a control unit that, when instructed to switch the display of the display image via the operation unit, exercises control so that the display of the display image on the display unit is switched to the display image having the background image in a visible state indicating whether the display is switchable. | 12-13-2012 |
20130084621 | PLASMID VECTOR - The object is to provide a technique for modifying a bacterium belonging to the genus | 04-04-2013 |
Patent application number | Description | Published |
20140069556 | HIGH CARBON THIN STEEL SHEET AND METHOD FOR PRODUCING SAME - A high carbon steel sheet having a chemical composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol. Al: 0.08% or less, N: 0.02% or less, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the fraction of pro-eutectoid ferrite, among the ferrite, in the whole steel microstructure is 20% or more and less than 50%, the average grain size dc of the cementite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 0.50 to 1.5 μm, and the average grain size ds of the cementite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness satisfies ds/dc≦0.8. | 03-13-2014 |
20140076469 | HIGH CARBON THIN STEEL SHEET AND METHOD FOR PRODUCING SAME - A steel sheet having a composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol.Al: 0.08% or less, N: 0.02% or less, and Fe and incidental impurities, and a microstructure composed of ferrite and cementite, wherein each of the average grain size ds of the ferrite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness and the average grain size dc of the ferrite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 20 to 40 μm, 0.80≦ds/dc≦1.20 is satisfied, the average grain size of the cementite is 1.0 μm or more, the spheroidizing ratio is 90% or more, and 90% or more of cementite is present inside ferrite grains. | 03-20-2014 |
20150299830 | STEEL SHEET FOR SOFT-NITRIDING AND METHOD FOR MANUFACTURING THE SAME - A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; Nb: 0.005% or more to 0.025% or less; and N: 0.005% or less, on a mass percent basis, such that C and Nb satisfy 0.10≦Nb/C≦0.30 (where C and Nb are respective contents of the elements (by mass %)), wherein balance comprises Fe and incidental impurities, and a microstructure that is a complex-phase microstructure containing ferrite and pearlite, and the microstructure having a ratio of a microstructure other than the ferrite and the pearlite of 1% or less, and the microstructure having a ratio of polygonal ferrite in the ferrite of less than 50%. | 10-22-2015 |
Patent application number | Description | Published |
20140332122 | HIGH CARBON HOT ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME (AS AMENDED) - A high carbon hot rolled steel sheet having a chemical composition containing by mass %, C: 0.20% to 0.48%, Si: 0.1% or less, Mn: 0.5% or less, P: 0.03% or less, S: 0.01% or less, Al: 0.1% to 0.6%, Cr: 0.05% to 0.5%, B: 0.0005% to 0.0050%, Ca: 0.0010% to 0.0050%, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, where the average amount of N in a surface layer portion from the surface to the position at a depth of 0.1 mm in thickness direction is 0.1% or more and the average amount of N in the central portion in thickness is 0.01% or less, and a microstructure composed of ferrite and carbides, wherein the average grain size of the ferrite is 10 to 20 and the spheroidization ratio of the carbides is 90% or more. | 11-13-2014 |
20150090376 | HIGH CARBON HOT-ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - A high carbon hot rolled steel sheet and a method for manufacturing the same are provided, wherein excellent cold workability and excellent hardenability are obtained stably. The high carbon hot rolled steel sheet has a composition containing C: 0.20% to 0.48%, Si: 0.1% or less, Mn: 0.5% or less, P: 0.03% or less, S: 0.01% or less, sol. Al: more than 0.10% and 1.0% or less, N: 0.005% or less, B: 0.0005% to 0.0050%, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the average grain size of the above-described ferrite is 10 to 20 μm and the spheroidization ratio of the above-described cementite is 90% or more. | 04-02-2015 |