Patent application number | Description | Published |
20080238046 | AIR BAG BRACKET/FASTENER - An airbag installation fastener includes first and second fastener members connected by a hinge member. The first and second fastener members rotate from a fastener open condition to engage each other in a fastener closed position. The fastener closed position provides for an air bag member positioned between the first and second fastener members. The first and second fastener members have an aperture receiving a vehicle connected stud to support both the airbag installation fastener and the air bag member from the stud. An arm extending from the second fastener member rotates with respect to the second fastener member. The arm extends from the second fastener member in the fastener closed condition and both engages the second fastener member and abuts the stud to visually indicate a fastener completed installation condition. | 10-02-2008 |
20090035091 | THREADED BOLT AND METHOD FOR ITS PRODUCTION - A threaded bolt having a shank of basic cylindrical form and with a root end and a head end is provided with a spiral-shaped external thread, which has at least one principal flight and in the vicinity of the root end has at least one lead-in flight, adjoined by the principal flight, where the lead-in flight has a lead-in surface which differs from the principal flight and is formed in order to come into crossing-free engagement with flights of a complementary internal thread of an element. The lead-in flight and the principal flight are interrupted by at least one groove, which extends in the longitudinal direction of the shank in order to form a free space for the accommodation of lacquer residues. The flights and the grooves are initially formed by rolling. | 02-05-2009 |
20090133228 | FASTENER - A fastener with a shank and, arranged at one end of the shank, a head intended for welding to a workpiece, has multiple detent pawls formed on the shank that extend radially outward from the shank toward the head and that are elastically resilient in the radially inward direction. On the outside, each detent pawl has an engagement recess with support surfaces. The shank has a longitudinal hole, in which is located a stud, wherein one end of the stud projects out of the longitudinal hole and forms the head for welding. Also formed on the shank is a flange that is elastically resilient in the axial direction, whose outermost edge region is located opposite the engagement recess of the detent pawls. | 05-28-2009 |
20090214317 | WELD STUD - A welding stud including a head and a shank extending from the head. The shank has an end region opposite the head and the end region includes at least two angled surfaces which incline towards an axis of the shank in a direction moving away from the head. | 08-27-2009 |
20100293776 | METHOD FOR FASTENING A RETAINER OF AN AIRBAG - The invention concerns a method for fastening a retainer of an airbag, in particular of a window bag, to a body of a motor vehicle. The method for fastening including the steps of: arranging the retainer on the body by inserting a hollow pin in a corresponding bodyshell opening; positioning a tool on the retainer; and pressing a pin into an opening of the hollow pin to radially expand the hollow pin, and thereby securing the hollow pin in the corresponding bodyshell opening. | 11-25-2010 |
20100295273 | AIRBAG FASTENING DEVICE WITH SLIDE - A fastening device for the airbag, in particular a window airbag, is provided, having a retainer to which the airbag can be fastened and that has an opening through which a mounting stud can be passed. Fastened to the retainer is a slide element that can be slid from an open position into a fastened position and the stud is captured in the opening by the slide in the fastened position. | 11-25-2010 |
20110086715 | THREADED BOLT AND METHOD FOR ITS PRODUCTION - A threaded bolt may be produced according to a method including the steps of: forming a cylindrical bolt blank of metal with a root end and a head end, and with a section of the bolt blank adjoining the root end that is reduced in diameter up to a region designed for the formation of lead-in flights. Then, in a first rolling phase, partially form the principal thread flights and the lead-in thread flights using a first pass of flat jaws of a thread rolling machine. Then, in a second rolling phase, fully form the principal flights and the lead-in flights and forming grooves. | 04-14-2011 |
20130259597 | WELD STUD - A welding stud including a head and a shank extending from the head. The shank has an end region opposite the head and the end region includes at least two angled surfaces which incline towards an axis of the shank in a direction moving away from the head. | 10-03-2013 |
Patent application number | Description | Published |
20110049667 | Semiconductor Component With Dielectric Layer Stack - A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider. | 03-03-2011 |
20120019284 | Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor - A normally-off power field-effect transistor semiconductor structure is provided. The structure includes a channel, a source electrode, a gate electrode and trapped charges which arranged between the gate electrode and the channel such that the channel is in an off-state when the source electrode and the gate electrode are on the same electric potential. Further, a method for forming a semiconductor device and a method for programming a power field effect transistor are provided. | 01-26-2012 |
20120037955 | Transistor Component with Reduced Short-Circuit Current - A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7. | 02-16-2012 |
20120098083 | INTEGRATED CIRCUIT TECHNOLOGY WITH DIFFERENT DEVICE EPITAXIAL LAYERS - A semiconductor die includes a substrate, a first device region and a second device region. The first device region includes an epitaxial layer on the substrate and one or more semiconductor devices of a first type formed in the epitaxial layer of the first device region. The second device region is spaced apart from the first device region and includes an epitaxial layer on the substrate and one or more semiconductor devices of a second type formed in the epitaxial layer of the second device region. The epitaxial layer of the first device region is different than the epitaxial layer of the second device region so that the one or more semiconductor devices of the first type are formed in a different epitaxial layer than the one or more semiconductor devices of the second type. | 04-26-2012 |
20120211806 | Normally-Off Semiconductor Switches and Normally-Off JFETS - A normally-off JFET is provided. The normally-off JFET includes a channel region of a first conductivity type, a floating semiconductor region of a second conductivity type adjoining the channel region, and a contact region of the first conductivity type adjoining the floating semiconductor region. The floating semiconductor region is arranged between the contact region and the channel region. Further, a normally-off semiconductor switch is provided. | 08-23-2012 |
20140061647 | Field-Effect Semiconductor Device and Manufacturing Method Therefor - According to an embodiment of a field-effect semiconductor device, the field-effect semiconductor device includes a semiconductor body and a source electrode. The semiconductor body includes a drift region, a gate region and a source region of a first semiconductor material having a first band-gap and an anode region of a second semiconductor material having a second band-gap lower than the first band-gap. The drift region is of a first conductivity type. The gate region forms a pn-junction with the drift region. The source region is of the first conductivity type and in resistive electric connection with the drift region and has a higher maximum doping concentration than the drift region. The anode region is of the second conductivity type, forms a heterojunction with the drift region and is spaced apart from the source region. The source metallization is in resistive electric connection with the source region and the anode region. | 03-06-2014 |
20140087541 | Method for Manufacturing a Semiconductor Substrate, and Method for Manufacturing Semiconductor Devices Integrated in a Semiconductor Substrate - A method of manufacturing a semiconductor substrate includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, and forming, when seen in a cross-section perpendicular to the first surface, cavities in the semiconductor wafer at a first distance from the first surface. The cavities are laterally spaced from each other by partition walls formed by semiconductor material of the wafer. The cavities form a separation region. The method further includes forming a semiconductor layer on the first surface of the semiconductor wafer, and breaking at least some of the partition walls by applying mechanical impact to the partition walls to split the semiconductor wafer along the separation region. | 03-27-2014 |
20140117412 | Heterojunction Transistor and Manufacturing Method Therefor - A heterojunction transistor including a semiconductor body is provided. The semiconductor body includes: a base region of a semiconductor material having a first band-gap, the base region being of a first conductivity type; a collector region of a semiconductor material having a second band-gap which is larger than the first band-gap by at least about 1 eV, the collector region being of a second conductivity type and forming a first heterojunction with the base region; and an emitter region of a semiconductor material having a third band-gap which is larger than the first band-gap by at least about 1 eV, the emitter region being of the second conductivity type and forming a second heterojunction with the base region. Further, a method for producing a heterojunction transistor is provided. | 05-01-2014 |
20140319532 | Heterojunction Semiconductor Device and Manufacturing Method - A heterojunction semiconductor device having a semiconductor body is provided. The semiconductor body includes a first semiconductor region comprising aluminum gallium nitride, a second semiconductor region comprising gallium nitride and forming a heterojunction with the first semiconductor region, an n-type third semiconductor region, a p-type fourth semiconductor region forming a first rectifying junction with the third semiconductor region, and an n-type seventh semiconductor region adjoining the heterojunction formed between the first semiconductor region and the second semiconductor region. The first rectifying junction forms a rectifying junction of a transistor structure which is in ohmic contact with the seventh semiconductor region. Further, a method for producing such a heterojunction semiconductor device is provided. | 10-30-2014 |
20150069411 | SEMICONDUCTOR DEVICE, JUNCTION FIELD EFFECT TRANSISTOR AND VERTICAL FIELD EFFECT TRANSISTOR - A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity type, the semiconducting material of the mesa including at least locally a first doping concentration not extending further into the substrate than the bottom plane. The semiconductor device further includes an electrically conductive structure arranged at least partially along a sidewall of the mesa, the electrically conductive structure forming a Schottky or Schottky-like electrical contact with the semiconducting material of the mesa, wherein the substrate comprises the semiconducting material of the first conductivity type comprising at least locally a second doping concentration different from the first doping concentration along a projection of the mesa into the substrate. | 03-12-2015 |
Patent application number | Description | Published |
20080303626 | Fuse For a Chip - In order to produce a cost-effective fuse ( | 12-11-2008 |
20100054299 | SENSOR DEVICE - A sensor device is provided for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer which is formed on a substrate. In order to develop the sensor device further so that the measuring speed of the sensor device is further increased, the disclosure proposes that the interdigital electrodes and recesses between the interdigital electrodes have a moisture-sensitive hydrophilic surface through condensation cores applied to it. | 03-04-2010 |
20130039380 | SENSOR DEVICE - A sensor device is provided for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer which is formed on a substrate. In order to develop the sensor device further so that the measuring speed of the sensor device is further increased, the disclosure proposes that the interdigital electrodes and recesses between the interdigital electrodes have a moisture-sensitive hydrophilic surface through condensation cores applied to it. | 02-14-2013 |
20130234822 | THERMAL SAFETY DEVICE - In order to provide a method for isolating a circuit and a thermal link, wherein the link has a very low resistance and is suitable for high currents, in particular very high short load currents, and also has a high degree of reliability, in particular under difficult conditions, such as thermal and mechanical loading which lasts for a relatively long time, for example, the invention proposes that, during the phase transition of the material of the fusible element ( | 09-12-2013 |