Patent application number | Description | Published |
20080271915 | METHOD FOR MAKING A CIRCUIT BOARD AND MULTI-LAYER SUBSTRATE WITH PLATED THROUGH HOLES - A method for making a circuit board includes the following steps. At least two substrates are provided, wherein each substrate includes two surfaces, two circuit layers respective formed on the two surfaces and at least a via passing through the two surfaces. A metal layer is formed on the side wall of the via, wherein the metal layer electrically connects two circuit layers on the two surfaces of each substrate to each other. An insulating film is at least formed on the surface of the metal layer by an electrophoretic deposition process. Vias of two substrates are aligned with each other and two substrates are laminated to each other, so as to form a multi-layer substrate. Another metal layer is formed on the insulating film, wherein each metal layer is an independent electrical channel. | 11-06-2008 |
20080303146 | PROCESS FOR MANUFACTURING SUBSTRATE WITH BUMPS AND SUBSTRATE STRUCTURE - A process for manufacturing a substrate with bumps is provided. First, a metallic substrate having a body and a plurality of conductive elements is provided. Next, a first dielectric layer is formed on the body, and the conductive elements are covered by the first dielectric layer. Then, a plurality of circuits and a plurality of contacts are formed on a surface of the first dielectric layer, and the contacts are electrically connected to the conductive elements. Next, a second dielectric layer is formed on the surface of the first dielectric layer, and the circuits are covered by the second dielectric layer. Finally, the body is patterned to form a plurality of bumps, and the bumps are electrically connected to the contacts by the conductive elements. The bumps are formed by etching the body, so the connection reliability between bumps and conductive elements is desirable, and the manufacturing cost is reduced. | 12-11-2008 |
20090189270 | MANUFACTURING PROCESS AND STRUCTURE FOR EMBEDDED SEMICONDUCTOR DEVICE - A manufacturing process for an embedded semiconductor device is provided. In the manufacturing process, at least one insulation layer and a substrate are stacked to each other, and a third metal layer is laminated on the insulation layer to embed a semiconductor device in the insulation layer. The substrate has a base, a first circuit layer, a second circuit layer, and at least a first conductive structure passing through the base and electrically connected to the first circuit layer and the second circuit layer. In addition, the third metal layer is patterned to form a third circuit layer having a plurality of third pads. | 07-30-2009 |
20090191329 | SURFACE TREATMENT PROCESS FOR CIRCUIT BOARD - A surface treatment process for a circuit board is provided. The circuit board includes a substrate, a first circuit layer disposed on an upper surface of the substrate, and a second circuit layer disposed on a lower surface of the substrate. The first circuit layer is electrically connected to the second circuit layer. In the surface treatment process for the circuit board, a first oxidation protection layer and a second oxidation protection layer are respectively formed on a portion of the first circuit layer and a portion of the second circuit layer by immersion. Afterwards, the first circuit layer exposed by the first oxidation protection layer is subjected to black oxidation to form a black oxide layer. The thickness of the first oxidation protection layer is thinner than or equal to the thickness of the black oxide layer. | 07-30-2009 |
20090218669 | MULTI-CHIP PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a multi-chip package structure is provided. In the method, a number of cavities are formed on a predetermined cutting line of a first wafer by partly removing the first wafer and a first metal layer. Conductive walls of a first circuit layer are electrically connected to a cut cross-section of the first metal layer exposed by the cavities. In addition, conductive bumps of a second wafer are pressed into a cover layer and electrically connected to the first circuit layer. The first metal layer is then patterned to form a second circuit layer having a number of second pads. Next, the first wafer and the second wafer are cut along the predetermined cutting line to form a number of separated multi-chip package structures. | 09-03-2009 |
20090294027 | CIRCUIT BOARD PROCESS - A circuit board process is provided. In the circuit board process, a first substrate and a second substrate are stacked to form a cavity for accommodating chips. The top of the cavity is covered by a third metal layer that serves as a mask. The first substrate has a base, a first metal layer, a second metal layer, and at least a first conductive structure passing through the base and electrically connected to the first metal layer and the second metal layer. The first metal layer is patterned to form a first circuit layer having a number of first pads. A third circuit layer having a number of third pads is formed on the second substrate. The first pads and the third pads are not on a same plane for wire bonding. | 12-03-2009 |
20100139965 | EMBEDDED CIRCUIT SUBSTRATE AND MANUFACTURING METHOD THEREOF - An embedded circuit substrate comprising: a core structure having a first surface and a second surface opposite to each other; a first patterned conductive layer disposed on the first surface and embedded in the core structure; a second patterned conductive layer disposed on the second surface and embedded in the core structure; and a plurality of conductive blocks disposed in the core structure for conducting the first patterned conductive layer and the second patterned conductive layer is provided. Furthermore, a manufacturing method of an embedded circuit substrate is also provided. | 06-10-2010 |
20110014751 | MANUFACTURING PROCESS FOR EMBEDDED SEMICONDUCTOR DEVICE - A manufacturing process for an embedded semiconductor device is provided. In the manufacturing process, at least one insulation layer and a substrate are stacked to each other, and a third metal layer is laminated on the insulation layer to embed a semiconductor device in the insulation layer. The substrate has a base, a first circuit layer, a second circuit layer, and at least a first conductive structure passing through the base and electrically connected to the first circuit layer and the second circuit layer. In addition, the third metal layer is patterned to form a third circuit layer having a plurality of third pads. | 01-20-2011 |
20110217813 | METHOD OF FABRICATING MULTI-CHIP PACKAGE STRUCTURE - A method of fabricating a multi-chip package structure is provided. In the method, a number of cavities are formed on a predetermined cutting line of a first wafer by partly removing the first wafer and a first metal layer. Conductive walls of a first circuit layer are electrically connected to a cut cross-section of the first metal layer exposed by the cavities. In addition, conductive bumps of a second wafer or a chip are pressed into a cover layer and electrically connected to the first circuit layer. The first metal layer is then patterned to form a second circuit layer having a number of second pads. Next, the first wafer and the second wafer are cut along the predetermined cutting line to form a number of separated multi-chip package structures. | 09-08-2011 |