Patent application number | Description | Published |
20110180137 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode are constituted with metal particles having copper as a main component, a phosphorous-containing compound, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for an electrode. | 07-28-2011 |
20110180138 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode includes metal particles having copper as a main component, glass particles including diphosphorus pentoxide and divanadium pentoxide and having a content of divanadium pentoxide of 1% by mass or more, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for an electrode. | 07-28-2011 |
20110180139 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode of the first aspect of the present invention includes silver alloy particles, glass particles, a resin, and a solvent. The paste composition for an electrode of the second aspect of the present invention includes copper particles, silver or silver alloy particles, glass particles containing P | 07-28-2011 |
20110195540 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD FOR FORMING P-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 08-11-2011 |
20110195541 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 08-11-2011 |
20110209751 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode according to the present invention includes metal particles containing copper as a main component, a flux, glass particles, a solvent, and a resin. Further, a photovoltaic cell according to the present invention has an electrode formed by using the paste composition for an electrode. | 09-01-2011 |
20110212564 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - In a method for producing a photovoltaic cell, the improvement comprising:
| 09-01-2011 |
20110256658 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - In a method for producing a photovoltaic cell, the improvement comprising:
| 10-20-2011 |
20110277831 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280° C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode. | 11-17-2011 |
20120122263 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region. | 05-17-2012 |
20120122264 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region. | 05-17-2012 |
20120122265 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium onto a second region other than the first region on the surface of the semiconductor substrate where the first region is provided; a thermal diffusion process in which an n-type diffusion layer and a p-type diffusion layer are formed by heat-treating the semiconductor substrate onto which the n-type diffusion layer forming composition and the p-type diffusion layer forming composition are applied; and forming an electrode on each of the first region where the n-type diffusion layer is formed and the second region where the p-type diffusion layer is formed, respectively. | 05-17-2012 |
20120178201 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 07-12-2012 |
20120184062 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 07-19-2012 |
20120260981 | PASTE COMPOSITION FOR ELECTRODE, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The present invention provides a paste composition for an electrode, the paste composition including phosphorus-tin-containing copper alloy particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell. | 10-18-2012 |
20120260982 | PASTE COMPOSITION FOR ELECTRODE, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The present invention provides a paste composition for an electrode, the paste composition comprising phosphorus-containing copper alloy particles, tin-containing particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell. | 10-18-2012 |
20120260988 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin. | 10-18-2012 |
20120313199 | MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME - The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group. | 12-13-2012 |
20130025669 | PHOTOVOLTAIC CELL SUBSTRATE, METHOD OF PRODUCING PHOTOVOLTAIC CELL SUBSTRATE, PHOTOVOLTAIC CELL ELEMENT AND PHOTOVOLTAIC CELL - The invention provides a photovoltaic cell substrate that is a semiconductor substrate comprising an n-type diffusion layer, an n | 01-31-2013 |
20130025670 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu. | 01-31-2013 |
20130071968 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-21-2013 |
20130078759 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 03-28-2013 |
20140060385 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 03-06-2014 |
20140065761 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-06-2014 |
20140076396 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu. | 03-20-2014 |
20140120648 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 05-01-2014 |
20140242741 | MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME - The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group. | 08-28-2014 |
20150017754 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE HAVING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT - The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element. | 01-15-2015 |
Patent application number | Description | Published |
20080303057 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A semiconductor device and a method of forming the semiconductor device include a substrate and an n drift layer on the substrate with an insulator film placed between them. A trench is provided in a section between a p base region and an n buffer layer on the surface layer of the n drift layer. Moreover, the distance between the bottom of the trench and the insulator film on the substrate is 1 μm or more and 75% or less than the thickness of the n drift layer. This reduces the ON-state Voltage Drop and enhances the device breakdown voltage and the latch up current in a lateral IGBT or a lateral MOSFET. | 12-11-2008 |
20090085100 | SEMICONDUCTOR DEVICE - A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device. | 04-02-2009 |
20090085166 | GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A gallium nitride semiconductor device is disclosed that can be made by an easy manufacturing method. The device includes a silicon substrate, buffer layers formed on the top surface of the silicon substrate, and gallium nitride grown layers formed thereon. The silicon substrate has trenches | 04-02-2009 |
20090114923 | SEMICONDUCTOR DEVICE - A semiconductor device includes a peripheral voltage withstanding structure, which includes an n | 05-07-2009 |
20090117724 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes the steps of forming an insulating film having a prescribed repetition pattern on one surface of a semiconductor substrate and then depositing semiconductor layers on the one surface of the semiconductor substrate; forming trenches from the other surface of the semiconductor substrate in such a manner that the trenches come into contact with the semiconductor layer, that plural trenches are formed for each semiconductor chip to be formed on the semiconductor substrate, and that at least one pattern of the insulating film is exposed through the bottom of each trench; and covering the inside surfaces of the trenches and the other surface of the semiconductor substrate with a metal electrode. | 05-07-2009 |
20090206398 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance. | 08-20-2009 |
20090283776 | WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and a second trench in a source electrode part (Schottky diode part) are disposed so that the first and second trenches are close to each other while and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a wide band gap semiconductor device which is small in size and low in on-resistance and loss, and in which electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage to thereby increase avalanche breakdown tolerance at turning-off time. | 11-19-2009 |
20100224886 | P-CHANNEL SILICON CARBIDE MOSFET - A second trench in each source electrode portion (Schottky diode portion) is formed to have a depth equal to or larger than the depth of a first trench in each gate electrode portion. The distance between the first and second trenches is set to be not longer than 10 μm. A source electrode is formed in the second trench and a Schottky junction is formed in the bottom portion of the second trench. In this manner, it is possible to provide a wide band gap semiconductor device which is small-sized, which has low on-resistance and low loss characteristic, in which electric field concentration into a gate insulating film is relaxed to suppress reduction of a withstand voltage, and which has high avalanche breakdown tolerance at turn-off time. | 09-09-2010 |
20110163372 | SEMICONDUCTOR DEVICE - A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device. | 07-07-2011 |
20130020633 | SEMICONDUCTOR DEVICE - A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device. | 01-24-2013 |
20130285072 | WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and second trench in a source electrode part (Schottky diode) are disposed close to each other, and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a small wide band gap semiconductor device which is low in on-resistance and loss. Electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage and increase avalanche breakdown tolerance at turning-off time. | 10-31-2013 |
Patent application number | Description | Published |
20090064501 | Method of Manufacturing Liquid Container and Liquid Container Manufactured Using the Same - A liquid container manufacturing method including a storage container which is storable a liquid receptacle, and including preparing the liquid container for which a liquid housed in the liquid receptacle is supplied to the outside via a flow path inside a liquid volume detector device, filling the liquid in the liquid receptacle stored in the storage container, and connecting the liquid volume detector device to the liquid receptacle filled with liquid. | 03-12-2009 |
20090244224 | LIQUID JETTING SYSTEM, LIQUID CONTAINER, HOLDER, AND LIQUID JETTING APPARATUS HAVING HOLDER - A liquid jetting system includes a liquid container including a front wall, and a side wall having a bias-force receiving part, and a liquid jetting apparatus including a holder that receives installation of the liquid container through insertion of the liquid container in a prescribed insertion direction with the front wall facing forward. The holder further includes a liquid feed needle that receives feed of liquid from the liquid container when the liquid container has been installed, a holder-side electrode situated to a upper side from the liquid feed needle and adapted to electrically connect with the liquid container when the liquid container has been installed, and bias force part situated to a lower side from the liquid feed needle and adapted to exert a bias force on the bias-force receiving part of the liquid container in a prescribed biasing direction when the liquid container has been installed. The liquid container further includes a feed part having a liquid feed port that opens onto the front wall and that receives insertion of the liquid feed needle when the liquid container has been installed in the holder, and a container-side electrode that is to be secured at such a location as to electrically connect with the holder-side electrode when the liquid container has been installed in the holder. The biasing direction is established such that an extended line extending in the biasing direction from the bias-force receiving part is offset from the container-side electrode towards the side wall side. | 10-01-2009 |
20130083141 | CARTRIDGE AND PRINTING APPARATUS - An ink cartridge has a label portion on a wall surface of one periphery of a case forming an ink accommodating unit. The label unit has a lamination structure in which a plurality of layers with different properties and states are laminated, and includes an optical functional layer that allows light (first wavelength of light) with a predetermined wavelength to pass and an optical reflective layer that reflects the first wavelength of light, and the optical reflective layer is a surface side of the case. When the optical reflective layer is heated from a thermal head of a heating unit directed to the label portion, the optical reflective layer irreversibly raises absorptivity of the first wavelength of light with respect to a received range. | 04-04-2013 |
20130083142 | CARTRIDGE AND PRINTING APPARATUS - An ink cartridge has a label portion on a wall surface of one periphery of a case forming an ink accommodating unit. The label unit has an optical functional layer that allows a predetermined wavelength of light to pass, an optical dispersion layer that includes hollow bodies, and an optical absorptive layer that absorbs the first wavelength of light, which are laminated in this order, and the optical absorptive layer is a surface side of the case. When the optical reflective layer is heated from a heating unit directed to the label portion at a temperature of damaging the hollow bodies, the dispersion of the light is suppressed by the damage to the hollow bodies, and the transmittance of the wavelength of light is irreversibly raised. | 04-04-2013 |
20140063145 | STORAGE UNIT HOLDING MEMBER AND HOLDING MEMBER - A circuit board holder holding a circuit board which is not fixed to a liquid container containing an ink and stores information relating to the ink includes a support portion configured to have an inclined surface supporting the circuit board. The circuit board supported by the support portion is inclined to a horizontal direction. | 03-06-2014 |
20150062266 | Liquid Container - A liquid container capable of containing a liquid has a flow passage that is formed in the liquid container and through which the liquid flows, and a filter | 03-05-2015 |