Patent application number | Description | Published |
20080205462 | SURFACE EMITTING LASER ARRAY, PRODUCTION PROCESS THEREOF, AND IMAGE FORMING APPARATUS HAVING SURFACE EMITTING LASER ARRAY - A surface emitting laser array comprising a plurality of surface emitting laser devices each having a semiconductor layer containing a first reflection mirror, an active layer, a current confined portion and a second reflection mirror. The laser array further comprises a first metal material layer for dissipating heat formed through a first insulating layer on the semiconductor layer and a second metal material layer for injecting current into the active layer formed through a second insulating layer on the first metal material layer. The first metal material layer is commonly shared by the plurality of the surface emitting laser devices. | 08-28-2008 |
20080298418 | VERTICAL CAVITY SURFACE EMITTING LASER - A vertical cavity surface emitting laser capable of efficiently injecting carries into an active region directly under a photonic crystal mirror is provided. The vertical cavity surface emitting laser includes a first reflective mirror | 12-04-2008 |
20080298419 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE - A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically changes in the in-plane direction and a part of the periodic-refractive-index structure includes a plurality of parts that disorder the periodicity. | 12-04-2008 |
20080304532 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND IMAGE FORMING APPARATUS USING SURFACE EMITTING LASER ARRAY - Provided is a surface emitting laser in which a reflector material is not limited, a film thickness of the reflector is uniform, and a single lateral mode operation can be performed at high light output power. The surface emitting laser includes a resonator including a first refractive index region located at a central portion thereof and a second refractive index region which is located at a peripheral portion thereof and is lower in effective refractive index than the first refractive index region. Further, the resonator is configured such that a resonator length of a region including the first refractive index region satisfies a resonance condition and a resonator length of a region including the second refractive index region does not satisfy the resonance condition. | 12-11-2008 |
20090010297 | VERTICAL CAVITY SURFACE EMITTING LASER ARRAY AND METHOD FOR MANUFACTURING, AND IMAGE FORMING APPARATUS USING VERTICAL CAVITY SURFACE EMITTING LASER ARRAY - A vertical cavity surface emitting laser array is disclosed which allows wires for individually driving devices arrayed at a small pitch to be provided on the laser array with ease and with a high degree of freedom is provided. The vertical cavity surface emitting laser array includes a first substrate including a plurality of vertical cavity surface emitting laser devices each having an active layer disposed between reflection mirrors constituting a resonator, and a second substrate including wires for providing electrical contact with the surface emitting laser devices and having a configuration which permits transmission of light emitted from the surface emitting laser devices. In the vertical cavity surface emitting laser array, the second substrate is bonded to the first substrate on the laser emitting side of the first substrate. | 01-08-2009 |
20090196318 | METHOD OF MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF MANUFACTURING LASER ARRAY, VERTICAL CAVITY SURFACE EMITTING LASER AND LASER ARRAY, AND IMAGE FORMING APPARATUS WITH LASER ARRAY - A method of manufacturing a vertical cavity surface emitting laser of a mesa structure, the method comprises: sequentially laminating on a substrate a plurality of semiconductor layers including a bottom reflecting mirror, an active layer, a selective oxidation layer and a top reflecting mirror, followed by forming a dielectric film on the laminated semiconductor layers; forming on the dielectric film a first resist pattern comprised of large and small annular opening patterns and large and small annular resist patterns around the same central axis; forming the large and small annular opening patterns in the dielectric film; forming a second resist pattern in the dielectric film so that only the small annular opening pattern is exposed, followed by forming an annular electrode in the exposed small annular opening pattern; and forming a third resist pattern over the annular electrode. | 08-06-2009 |
20100029030 | PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS - Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision. | 02-04-2010 |
20100085999 | VERTICAL CAVITY SURFACE EMITTING LASER - A vertical cavity surface emitting laser capable of efficiently injecting carries into an active region directly under a photonic crystal mirror is provided. The vertical cavity surface emitting laser includes a first reflective mirror | 04-08-2010 |
20100129946 | SURFACE EMITTING LASER ARRAY, PRODUCTION PROCESS THEREOF, AND IMAGE FORMING APPARATUS HAVING SURFACE EMITTING LASER ARRAY - A surface emitting laser array comprising a plurality of surface emitting laser devices each having a semiconductor layer containing a first reflection mirror, an active layer, a current confined portion and a second reflection mirror. The laser array further comprises a first metal material layer for dissipating heat formed through a first insulating layer on the semiconductor layer and a second metal material layer for injecting current into the active layer formed through a second insulating layer on the first metal material layer. The first metal material layer is commonly shared by the plurality of the surface emitting laser devices. | 05-27-2010 |
20100329745 | PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS - Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision. | 12-30-2010 |
20110026557 | METHOD OF MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF MANUFACTURING LASER ARRAY, VERTICAL CAVITY SURFACE EMITTING LASER AND LASER ARRAY, AND IMAGE FORMING APPARATUS WITH LASER ARRAY - A method of manufacturing a vertical cavity surface emitting laser of a mesa structure, the method comprises: sequentially laminating on a substrate a plurality of semiconductor layers including a bottom reflecting mirror, an active layer, a selective oxidation layer and a top reflecting mirror, followed by forming a dielectric film on the laminated semiconductor layers; forming on the dielectric film a first resist pattern comprised of large and small annular opening patterns and large and small annular resist patterns around the same central axis; forming the large and small annular opening patterns in the dielectric film; forming a second resist pattern in the dielectric film so that only the small annular opening pattern is exposed, followed by forming an annular electrode in the exposed small annular opening pattern; and forming a third resist pattern over the annular electrode. | 02-03-2011 |
20110165712 | PROCESS FOR PRODUCING SURFACE-EMITTING LASER AND PROCESS FOR PRODUCING SURFACE-EMITTING LASER ARRAY - Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film. | 07-07-2011 |
20120032143 | EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region. | 02-09-2012 |
20120114005 | SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY - Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer. | 05-10-2012 |
20130044780 | SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY - Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer. | 02-21-2013 |
20130195135 | SURFACE EMITTING LASER - A surface emitting laser having a mesa structure includes an off-orientation substrate, a bottom reflection mirror, an active layer, a current confinement layer, a top reflection mirror, and a surface-relief structure. The central axis of a high-reflectivity region of the surface-relief structure and the central axis of the mesa structure do not coincide with each other. | 08-01-2013 |
20130223465 | SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING SURFACE-EMITTING LASER, METHOD OF MANUFACTURING SURFACE-EMITTING LASER ARRAY AND OPTICAL APPARATUS EQUIPPED WITH SURFACE-EMITTING LASER ARRAY - A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (λ: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer. | 08-29-2013 |
20140092391 | LIGHT SOURCE AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS USING THE SAME - A light source includes a control unit that controls currents injected into at least one light emitting region and a light emission spectrum conversion region. The at least one light emitting region includes a first light emitting region and a second light emitting region different from the first light emitting region, light that is emitted from the first light emitting region and passes through the light emission spectrum conversion region is combined with the light that is emitted from the first or second light emitting region and does not pass through the light emission spectrum conversion region. The control unit controls the currents injected into the light emission spectrum conversion region and the first light emitting region so that the current density of the light emission spectrum conversion region is smaller than the current density of the first light emitting region. | 04-03-2014 |
20150029512 | SURFACE EMITTING LASER AND OPTICAL APPARATUS - A surface emitting laser comprises an upper reflecting mirror, a lower reflecting mirror, and an active layer located between those mirrors. A cavity of the surface emitting laser consists of the upper reflecting mirror and the lower reflecting mirror. In the surface emitting laser, a plurality of individual light receiving portions is located in an optical path inside the cavity in order to detect a laser beam. | 01-29-2015 |