Patent application number | Description | Published |
20080302296 | Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling - A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given portion. | 12-11-2008 |
20080308034 | Ribbon Crystal Pulling Furnace Afterheater with at Least One Opening - A ribbon crystal pulling furnace has an interior for enclosing at least a portion of one or more ribbon crystals, and an afterheater positioned within the interior. The afterheater has at least one wall with one or more openings that facilitate control of the temperature profile within the furnace. | 12-18-2008 |
20080308035 | Removable Thermal Control for Ribbon Crystal Pulling Furnaces - A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible. | 12-18-2008 |
20090060823 | Reduced Wetting String for Ribbon Crystal - A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees. | 03-05-2009 |
20090061163 | Ribbon Crystal String for Increasing Wafer Yield - A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body. | 03-05-2009 |
20090061197 | Ribbon Crystal End String with Multiple Individual Strings - A ribbon crystal has a body and end string within the body. At least one end string has a generally concave cross-sectional shape and is formed from at least two individual strings. | 03-05-2009 |
20090301386 | Controlling Transport of Gas Borne Contaminants Across a Ribbon Surface - A method of growing a ribbon crystal provides a crucible containing molten material and passes string through the molten material to grow the ribbon crystal. The method further directs gas flow around the ribbon crystal such that the gas flows down along the ribbon crystal toward the crucible. | 12-10-2009 |
20100092776 | Ribbon Crystal Having Reduced Wetting String - A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees. | 04-15-2010 |
20110247546 | Ribbon Crystal String for Increasing Wafer Yield - A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body. | 10-13-2011 |
20120125254 | Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace - A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane. | 05-24-2012 |
20130036966 | RIBBON CRYSTAL END STRING WITH MULTIPLE INDIVIDUAL STRINGS - A ribbon crystal has a body and end string within the body. At least one end string has a generally concave cross-sectional shape and is formed from at least two individual strings. | 02-14-2013 |
20130047914 | RIBBON CRYSTAL STRING FOR INCREASING WAFER YIELD - A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body. | 02-28-2013 |
20140083349 | REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES - A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible. | 03-27-2014 |