Patent application number | Description | Published |
20080299763 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap. | 12-04-2008 |
20090294912 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 12-03-2009 |
20100052062 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - To provide a manufacturing method of a semiconductor device which can improve the reliability of the semiconductor device. A first insulating film for covering a semiconductor element formed in a semiconductor substrate is formed by a thermal CVD method or the like which has a good embedding property. A second insulating film is formed to cover the first insulating film by a plasma CVD method which has excellent humidity resistance. A plug is formed to penetrate the first insulating film and the second insulating film. A third insulating film comprised of a low-k film having a relatively low dielectric constant is formed over the second insulating film. A wiring is formed in the third insulating film by a damascene technique to be electrically coupled to the plug. | 03-04-2010 |
20100261334 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 10-14-2010 |
20100288007 | ROLLING MILL AND ROLLING METHOD FOR FLAT PRODUCTS OF STEEL - The object is to eliminate the difference in offset of work rolls at the upper and lower and left and right of the rolling mill occurring in the kiss roll state of the zero point adjustment work before rolling or during rolling and eliminate the problem of warping of the flat products or meander or camber due to the thrust force acting between the work rolls and backup rolls. | 11-18-2010 |
20110000271 | ROLLING MILL AND ROLLING METHOD FOR FLAT PRODUCTS OF STEEL - The object is to strictly eliminate the difference in offset of work rolls at the upper and lower and left and right of the rolling mill occurring in the kiss roll state before rolling or during rolling and eliminate the problem of warping of the flat products or meander or camber due to the thrust force acting between the work rolls and backup rolls. | 01-06-2011 |
20110041580 | ROLLING MILL FOR A PLATE OR A SHEET AND ITS CONTROL TECHNIQUE - The present invention provides a rolling mill of a plate or a sheet which eliminates rolling trouble due to warping of the rolled material and wavy shaped flatness defects running through the plate or sheet width direction such as “waviness”, “full waves, and “small waves” by providing a pair of a top and bottom work rolls, a pair of electric motors independently driving the pair of rolls, and control means for controlling one electric motor using the roll rotational speed as a control target value and controlling the other electric motor using the rolling torque applied to the rolled material from the work roll driven by that electric motor becoming substantially constant as a control target and using the drive torque as a control amount and a control technique of such a rolling mill of a plate or a sheet. | 02-24-2011 |
20110052917 | COPOLYMER INCLUDING UNCHARGED HYDROPHILIC BLOCK AND CATIONIC POLYAMINO ACID BLOCK HAVING HYDROPHOBIC GROUP IN PART OF SIDE CHAINS, AND USE THEREOF - The present invention relates to a block copolymer containing an uncharged hydrophilic polymer chain block and a cationic polyamino acid chain block, wherein the hydrophilic polymer chain block is covalently bound to one end of the main chain of the polyamino acid chain block, and the hydrophobic group is covalently bound to the side chains of not less than 10% and not greater than 70% of amino acid repeating units in the polyamino acid chain block. This block copolymer forms a stable aggregate with siRNA, a small-molecule nucleic acid, under a physiological condition. | 03-03-2011 |
20110266657 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 11-03-2011 |
20120196810 | ANIONIC POLYMER, POLYION COMPLEX AND TERNARY POLYMER COMPOSITE USING ANIONIC POLYMER, AND PHARMACEUTICAL COMPOSITION - There are provided an anionic polymer, a polyion complex, and a ternary polymer composite, each of which is stable in a biological environment and is capable of realizing small RNA delivery without causing any undesired immune response. An anionic polymer according to an embodiment of the invention includes: a main chain which includes repeating units having carboxyl groups; and a side chain which is linked with part of the carboxyl groups in the main chain and is represented by the following formula: | 08-02-2012 |
20120200127 | STRUCTURE OF CONTAINER MOUNTED TO VEHICLE SEAT AND METHOD FOR MOUNTING CONTAINER TO VEHICLE SEAT - Container for accommodating small article(s) comprises: a container body including flange portion wherein connecting slits are formed; and a container lid element including lateral wall region having projected connecting pieces. A trim cover assembly of the seat includes: a peripheral end area or margin defined in a container mounting hole formed in the trim cover assembly; and connecting slits formed in that margin. In assembly, the connecting pieces are inserted through those flanged portion, while simultaneously the margin of trim cover assembly is sandwiched between the flanged portion and lateral wall region. Those free ends are flattened to connecting slits, respectively, so that free ends of the connecting pieces project from the connect together all the container body, container lid element and trim cover assembly. Finally, the trim cover assembly is attached upon a foam padding, with the container body inserted in a recession of the foam padding. | 08-09-2012 |
20120267793 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 10-25-2012 |
20140283573 | ROLLING APPARATUS FOR FLAT-ROLLED METAL MATERIALS - A rolling apparatus for flat-rolled metal materials including a pair of upper and lower work rolls | 09-25-2014 |
20140305179 | ROLLING APPARATUS FOR FLAT-ROLLED METAL MATERIALS | 10-16-2014 |