Patent application number | Description | Published |
20140259441 | METHODS AND COMPOSITIONS FOR TREATING LAUNDRY ITEMS - A reduced dye transfer cycle of operation for a laundry treating appliance having a treating for receiving laundry for treatment includes a treating chemistry application phase where a treating chemistry is supplied to the treating chamber, the treating chemistry including at least one water soluble cationic dye absorber, a surfactant system, and an emulsifier. | 09-18-2014 |
20140259442 | METHODS AND COMPOSITIONS FOR TREATING LAUNDRY ITEMS - A method of treating laundry in a laundry treating appliance having a treating chamber for receiving the laundry for treatment according to an automatic cycle of operation implemented by a controller of the laundry treating appliance includes receiving by the controller an input indicative of the laundry comprising at least one new laundry item. | 09-18-2014 |
20140259445 | METHODS AND COMPOSITIONS FOR TREATING LAUNDRY ITEMS - A reduced dye transfer cycle of operation for a laundry treating appliance having a treating chamber for receiving laundry for treatment includes a pre-wetting phase, a wash phase, and a rinse phase and further includes a dye fixative phase, a first dye absorber phase, and a second dye absorber phase. | 09-18-2014 |
20140274868 | METHODS AND COMPOSITIONS FOR TREATING LAUNDRY ITEMS - A laundry treatment composition for reducing dye transfer from laundry during a treating cycle of operation in a laundry treating appliance includes a first dye transfer inhibitor (DTI), a second DTI, and a third DTI. | 09-18-2014 |
20140277751 | METHODS AND COMPOSITIONS FOR TREATING LAUNDRY ITEMS - A clothes dryer for drying fabric items in accordance with a treating cycle of operation, includes a treating chamber receiving fabric items for treatment and a controller having a memory in which is stored a set of executable instructions comprising at least one user-selectable cycle of operation, the controller may receive an indication of a dye transfer event and implement a cycle of operation based thereon. | 09-18-2014 |
Patent application number | Description | Published |
20080299751 | SCHOTTKY DIODE AND METHOD THEREFOR - In one embodiment, a Schottky diode is formed on a semiconductor substrate with other semiconductor devices and is also formed with a high breakdown voltage and a low forward resistance. | 12-04-2008 |
20100022064 | HIGH VOLTAGE SENSOR DEVICE AND METHOD THEREFOR - In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. | 01-28-2010 |
20100059815 | SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG AND METHOD - In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core. | 03-11-2010 |
20100059849 | SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE - A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate. | 03-11-2010 |
20100124793 | HIGH VOLTAGE SENSOR DEVICE AND METHOD THEREFOR - In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. | 05-20-2010 |
20100304511 | METHOD OF SENSING A HIGH VOLTAGE - In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. | 12-02-2010 |
20110233635 | SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG - In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core. | 09-29-2011 |
20120208353 | Method for Manufacturing a Semiconductor Component - A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate. | 08-16-2012 |
20120292732 | SEMICONDUCTOR DIODE AND METHOD OF MANUFACTURE | 11-22-2012 |
20130288449 | SEMICONDUCTOR DIODE AND METHOD OF MANUFACTURE | 10-31-2013 |
20140319644 | SEMICONDUCTOR DIODE AND METHOD OF MANUFACTURE | 10-30-2014 |
20150084153 | SCHOTTKY DEVICE AND METHOD OF MANUFACTURE - A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile. | 03-26-2015 |