Patent application number | Description | Published |
20090296031 | LIQUID CRYSTAL DISPLAY DEVICE - One of the pixel electrode and the counter electrode includes, on a protective film formed so as to cover the thin film transistor, a planar metal electrode formed so as to cover routh surface formed in the reflective pixel part; and a planar transparent electrode formed in the reflective pixel part and the transparent pixel part so as to cover the metal electrode. Another one of the pixel electrode and the counter electrode includes, on an insulating film formed so as to cover the one of the pixel electrode and the counter electrode, a plurality of linear electrodes provided in parallel with one another so as to overlap the one of the pixel electrode and the counter electrode. The transparent electrode included in the one of the pixel electrode and the counter electrode is formed of a transparent conductive film which is formed through application. | 12-03-2009 |
20100102322 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode. | 04-29-2010 |
20100134398 | DISPLAY DEVICE - A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. The display device also includes a gate electrode, a gate insulating film formed so as to cover the gate electrode, an semiconductor layer in an island shape formed on an upper surface of the gate insulating film so as to superimpose the gate electrode without protruding from the gate electrode when viewed planarly, an insulating film formed so as to cover the semiconductor layer, and a pair of electrodes electrically connected to the semiconductor layer respectively through a pair of through holes that are formed at the insulating film. The semiconductor layer is formed by sequentially laminating a crystalline semiconductor layer and an amorphous semiconductor layer. The pair of electrodes is respectively formed by sequentially laminating a semiconductor layer doped with impurities and a metal layer. | 06-03-2010 |
20100200858 | DISPLAY DEVICE - A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film. | 08-12-2010 |
20100259713 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a first substrate and a second substrate. The first substrate includes a sheet-like first electrode formed of a transparent conductive film, a first insulator formed to cover the sheet-like first electrode, a plurality of linear second electrodes formed by a transparent conductive film on the first insulator so as to overlap the sheet-like first electrode, and a second insulator formed on the first insulator so as to cover the plurality of linear second electrodes. The first substrate and the second substrate interpose liquid crystal therebetween and are arranged to be opposed to each other. The sheet-like first electrode, the first insulator, and the plurality of linear second electrodes are provided in a pixel region on a surface of the first substrate of a side of the liquid crystal. The second insulator is made of the same material as the first insulator. | 10-14-2010 |
20110049524 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including a thin-film transistor and a capacitor element, the thin-film transistor includes: a first insulating film (IN | 03-03-2011 |
20110133197 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A bottom gate-type thin film transistor includes a gate insulating film, an interlayer insulating film formed on the gate insulating film, having an opening which is formed in a formation region of a gate electrode, and a semiconductor film formed on the interlayer insulating film so as to cover the opening. The interlayer insulating film contains nitrides in an amount larger than that in the gate insulating film, and the semiconductor film includes a microcrystalline semiconductor film or a polycrystalline semiconductor film formed on semiconductor crystalline nuclei which are formed on the gate insulating film and the interlayer insulating film and contain at least Ge. | 06-09-2011 |
20110260168 | IMAGE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is an image display device including thin film transistors on a substrate, including: gate lines and drain lines intersecting the gate lines, each thin film transistor having, in a channel region, a laminate structure in which a gate electrode, a gate insulating film, and a semiconductor layer are laminated in the stated order from the substrate side; and a pair of removal regions in which parts of the gate insulating film are removed, which are formed on both sides of the gate electrode and formed in a channel width direction of the channel region, in which when W represents a width of the gate electrode in the channel width direction of the channel region, and R represents a width of the gate insulating film in the channel width direction, which is sandwiched between the pair of removal regions, R≧W is satisfied. | 10-27-2011 |
Patent application number | Description | Published |
20080299693 | Manufacturing method for display device - A manufacturing method for a display device having a first conductive type thin film transistor and a second conductive type thin film transistor, comprising the steps of: in formation regions for a first conductive type thin film transistor and a second conductive type thin film transistor forming a semiconductor layer, a first insulating film covering the semiconductor layer and a gate electrode disposed on the first insulating film so as to intersect the semiconductor layer, on substrate having first conductive type impurity regions on both outer sides of a channel region of the semiconductor layer below the gate electrode forming a second insulating film, in the second insulating film and the first insulating film forming a contact hole for a drain electrode and a source electrode, in the formation region for the second conductive type thin film transistor forming electrodes and a second conductive type impurity region. | 12-04-2008 |
20080316385 | Liquid crystal display device - Three layers are formed on a TFT substrate SUB | 12-25-2008 |
20090032824 | Image displaying device - An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other. | 02-05-2009 |
20090103031 | Liquid Crystal Display Device - A liquid crystal display device comprises a first electrode disposed in a pixel area including an upper layer of a thin film transistor formed on a main surface of a first insulating substrate, a capacitive insulating layer disposed on the first electrode, and a second electrode disposed on the capacitive insulating layer. The first electrode and the second electrode are formed using a coated transparent electroconductive film and the capacitive insulating layer is formed using a coated insulating film. | 04-23-2009 |
20090104737 | METHOD FOR MANUFACTURING TFT SUBSTRATE - To provide a method for manufacturing a TFT substrate in which a channel length can be stably formed while the number of masks is reduced, and a method for manufacturing a TFT substrate which can individually control impurity concentrations for channels of an n-type TFT and a p-type TFT without increasing the number of masks. A method for manufacturing a TFT substrate includes processing a gate of the n-type TFT, a gate of the p-type TFT, and an upper capacitor electrode by using a half-tone mask instead of some of normal masks to reduce the number of masks, and changing impurity concentrations of semiconductor films located in regions which become a channel of the n-type TFT, a source and a drain of the n-type TFT, a channel of the p-type TFT, a source and a drain of the p-type TFT, and an lower capacitor electrode, by using a pattern of the half-tone mask and a normal mask. | 04-23-2009 |
20090115950 | Liquid crystal display device - A liquid crystal display device is provided having a transmissive region and a reflective region in a pixel region in which a protective film is formed covering a thin film transistor over a substrate, wherein in the reflective region, an uneven surface is formed on a surface of the protective film, and a capacitor electrode which comprises a transparent conductive film and which is electrically connected to a source electrode of the thin film transistor, a first capacitor insulating film, and a reflective plate which also functions as an opposing electrode and in which the uneven surface formed on the protective film surfaces and appears with the capacitor electrode and the first capacitor insulating film therebetween are formed over the surface of the protective film, a second capacitor insulating film and a pixel electrode are formed covering the reflective region and the transmissive region. | 05-07-2009 |
20120261668 | DISPLAY DEVICE - A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region. | 10-18-2012 |
20130011945 | IMAGE DISPLAYING DEVICE - An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other. | 01-10-2013 |