Patent application number | Description | Published |
20080299465 | FREQUENCY TRIPLING USING SPACER MASK HAVING INTERPOSED REGIONS - A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask comprised of a series of lines is first provided. A spacer mask having spacer lines adjacent to the sidewalls of the series of lines of the sacrificial mask is then formed. The spacer mask also has interposed lines between the spacer lines. Finally, the sacrificial mask is removed to provide only the spacer mask. The spacer mask having interposed lines triples the frequency of the series of lines of the sacrificial mask. | 12-04-2008 |
20080299494 | DOUBLE PATTERNING WITH A DOUBLE LAYER CAP ON CARBONACEOUS HARDMASK - Methods to etch features in a substrate with a multi-layered double patterning mask. The multi-layered double patterning mask includes a carbonaceous mask layer, a first cap layer on the carbonaceous mask layer and a second cap layer on the first cap layer. After forming the multi-layered mask, a first lithographically defined pattern is etched into the second cap layer. A double pattern that is a composition of the first lithographically defined pattern etched in the second cap layer and a second lithographically defined pattern is then etched into the first cap layer and the carbonaceous mask layer. The double pattern formed in the carbonaceous mask layer is then transferred to a substrate layer and any portion of the multi-layered mask remaining is then removed. | 12-04-2008 |
20080299776 | FREQUENCY DOUBLING USING SPACER MASK - A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask. | 12-04-2008 |
20090017631 | SELF-ALIGNED PILLAR PATTERNING USING MULTIPLE SPACER MASKS - A method for fabricating a semiconductor mask is described. The image of a series of lines from a first spacer mask is first provided to a mask layer to form a patterned mask layer. The image of a series of lines from a second spacer mask is then provided to the patterned mask layer to form a pillar mask comprised of a series of pillars. The image of the series of lines from the second spacer mask is non-parallel with the series of lines from the first spacer mask. | 01-15-2009 |
20090029544 | ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STOP - A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material. | 01-29-2009 |
20090263972 | BORON NITRIDE AND BORON-NITRIDE DERIVED MATERIALS DEPOSITION METHOD - A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process. | 10-22-2009 |
20090309230 | AIR GAP FORMATION AND INTEGRATION USING A PATTERNING CAP - Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap. | 12-17-2009 |
20090311635 | DOUBLE EXPOSURE PATTERNING WITH CARBONACEOUS HARDMASK - Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance. | 12-17-2009 |
20110008969 | FREQUENCY DOUBLING USING SPACER MASK - A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask. | 01-13-2011 |
20120196155 | RESIST FORTIFICATION FOR MAGNETIC MEDIA PATTERNING - A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged. | 08-02-2012 |