Patent application number | Description | Published |
20080205156 | Method of operating nonvolatile memory device - Provided is a method of operating a nonvolatile memory device to perform an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and a DC perturbation pulse to the nonvolatile memory device to perform the erase operation. | 08-28-2008 |
20080285353 | Flash memory device, method of manufacturing the same, and method of operating the same - Provided are a memory device, a method of manufacturing the same, and a method of operating the same. The memory device may include a channel region having an upper end where both sides of the upper end are curved, the curved portions of both sides allowing charges to be injected thereinto in a program or erase voltage such that the curved portions into which the charges are injected are separate from a portion which determines a threshold voltage, and a gate structure on the channel region. | 11-20-2008 |
20090008627 | Luminous device and method of manufacturing the same - A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire. | 01-08-2009 |
20090008664 | NANOWIRE LIGHT EMITTING DEVICE - A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material. | 01-08-2009 |
20090021988 | Nonvolatile memory device and method of operating fabricating the same - Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line. | 01-22-2009 |
20090121267 | Spin field effect transistor using half metal and method of manufacturing the same - A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO | 05-14-2009 |
20090146560 | White organic light emitting device - A white organic light emitting device (WOLED) includes electroluminescence (EL) red and blue light emitting layers disposed inside a cavity and a non-electroluminescence (NEL) green light emitting unit disposed outside the cavity or on a region inside the cavity where there are no combinations of electrons and holes. The green light emitting unit adjusts a green spectrum by resonating greenish blue light in the cavity, or is disposed on a path through which red and blue light output from the cavity travels and adapted to absorb the blue light and emit green light. A photoeluminescence (PL) light emitting layer may be a capping layer covering the cavity. The capping layer functions as an optical path control layer controlling an optical path. A white spectrum is obtained by combining blue light and red light generated by EL and green generated by PL. This WOLED can operate at a low voltage. | 06-11-2009 |
20100081227 | Luminous device and method of manufacturing the same - A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire. | 04-01-2010 |
20100148825 | Semiconductor devices and methods of fabricating the same - Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device. | 06-17-2010 |
20100149138 | Display apparatuses and methods of operating the same - Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10 | 06-17-2010 |
20100155695 | LIGHT EMITTING DEVICE USING NANO SIZE NEEDLE - A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer. | 06-24-2010 |
20100302870 | Nonvolatile memory device and method of operating and fabricating the same - Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line. | 12-02-2010 |
20110021014 | Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same - A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium. | 01-27-2011 |
20140071367 | DISPLAY APPARATUSES AND METHODS OF OPERATING THE SAME - Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10 | 03-13-2014 |
20140357593 | TOPICAL COMPOSITION CONTAINING THEANINE DERIVATIVES FOR USE ON SKIN - The present invention relates to a topical composition for use on skin containing theanine derivatives as active components and, more particularly, to a topical composition for use on skin having anti-aging, skin wrinkle repair, skin barrier enhancement, skin immunity enhancement, skin moisturizing, and atopy alleviation effects by containing theanine derivatives as active components. | 12-04-2014 |