Patent application number | Description | Published |
20080205136 | READ METHOD OF MEMORY DEVICE - A read method of a memory device including a MLC includes the steps of performing a data read operation according to a first read command; determining whether error correction of the read data is possible; if, as a result of the determination, error correction is difficult, performing a data read operation according to a second read command; determining whether error correction of read data is possible according to the second read command; and if, as a result of the determination, error correction is difficult, performing a data read operation according to a N | 08-28-2008 |
20080270679 | CONTROL CIRCUIT OF FLASH MEMORY DEVICE AND METHOD OF OPERATING THE FLASH MEMORY DEVICE - Provided is a method of operating a flash memory device having a first area and a second area, in which a programmed state and an erased state of the first area are opposite to that of the second area. The method includes receiving a program command, inverting the program data when the received program command is a command for programming the second area, and programming the inverted program data into the second area. | 10-30-2008 |
20090201727 | READ METHOD OF MEMORY DEVICE - A read method of a memory device including a MLC includes the steps of performing a data read operation according to a first read command; determining whether error correction of the read data is possible; if, as a result of the determination, error correction is difficult, performing a data read operation according to a second read command; determining whether error correction of read data is possible according to the second read command; and if, as a result of the determination, error correction is difficult, performing a data read operation according to a N | 08-13-2009 |
20090201728 | Erase Method of Flash Memory Device - Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation. | 08-13-2009 |
20090207660 | PROGRAM METHOD OF FLASH MEMORY DEVICE - Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation. | 08-20-2009 |
20090285020 | METHOD OF PROGRAMMING A MULTI LEVEL CELL IN A NON-VOLATILE MEMORY DEVICE - In a method of programming a multi level cell, program speed increases as a program operation/erase operation is repeatedly performed. Particularly, in an ISPP method of reducing a program start voltage, much time may be required to finish a first verifying operation in an initial step where a few program operations/erase operations are performed. Accordingly, a blind verifying method may be applied in accordance with the number of the program operation/erase operations. | 11-19-2009 |
20100034021 | METHOD OF CONTROLLING OPERATION OF FLASH MEMORY DEVICE - According to a method of controlling the operation of a flash memory device including a number of memory blocks, a memory block of the memory blocks is first selected as a reference block. A program operation is performed on a memory cell included in the reference block. In order to check an operating characteristic of the reference block, a threshold voltage level of the programmed memory cell is read. Parameters for performing an operation of the flash memory device are determined based on the operating characteristic of the reference block. The parameters are stored in the reference block. | 02-11-2010 |
20100162081 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A method of operating a nonvolatile memory device comprises performing a read operation to read data stored in a first memory cell block including first unit groups; detecting a second unit group from among the first unit groups, the second unit group having a number of error bits included in the read data, which is greater than a set number of bits and equal to or smaller than a maximum allowable number of bits which can be corrected through an error checking and correction (ECC) processing; and after the second unit group is detected, performing a copyback operation for moving the data, that are stored in the first memory cell block, to a second memory cell block. | 06-24-2010 |
20100259995 | METHOD OF PERFORMING READ OPERATION OF NONVOLATILE MEMORY DEVICE - In a method of performing a read operation of a nonvolatile memory device, a selected bit line is precharged. A pass voltage is sequentially applied to all word lines. The pass voltage applied to a word line, selected from among all the word lines, is changed for a read voltage. The read voltage is applied to the selected word line. Data of a memory cell coupled to the selected word line is read. | 10-14-2010 |
20120134214 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - A program method of a semiconductor memory device includes performing a least significant bit (LSB) program operation for target LSB program cells of a selected page, increasing the threshold voltages of target most significant bit (MSB) program cells of the selected page before performing an MSB operation for the target MSB program cells, and performing the MSB program operation for the target MSB program cells after the increasing of the threshold voltages of the target MSB program cells. | 05-31-2012 |
20120155197 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device includes a page buffer configured to store data read from a memory cell, a counter circuit configured to count the number of first data or second data in the read data for every read operation while the read operations are repeated a set number of times, and a control logic configured to determine the number of read operations and determine the read data of the memory cell based on the counted number. | 06-21-2012 |
20130304966 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING THE SAME - A non-volatile memory device and a method for programming the same are disclosed. The non-volatile memory device includes first and second memory blocks, each of which includes a plurality of memory cells including a plurality of pages in which data is written; a data write unit, upon receiving a write signal and an address allocation signal, configured to write first data in a first page of the first memory block, and write second data in a first page of the second memory block; and a copy-back unit, upon receiving a chip idle signal and a copy-back control signal, configured to write the first data written in the first memory block into a second page of the second memory block. | 11-14-2013 |
20140068377 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - Semiconductor memory device and method of operating same includes reading data stored in memory cells of a page; performing an error correction loop (ECC loop) including performing an error checking and correcting operation (ECC) on the read data; determining a number of bit errors in the read data; and when the number of bit errors is greater than a maximum number of correctable bits, incrementing the number of ECC iterations (ECC count) and increasing the maximum number of correctable bits; storing the ECC count until the number of bit errors is less than the maximum number of correctable bits; and programming corrected data to the memory cells when the stored ECC count is more than preset number. | 03-06-2014 |